JP7033441B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7033441B2
JP7033441B2 JP2017231776A JP2017231776A JP7033441B2 JP 7033441 B2 JP7033441 B2 JP 7033441B2 JP 2017231776 A JP2017231776 A JP 2017231776A JP 2017231776 A JP2017231776 A JP 2017231776A JP 7033441 B2 JP7033441 B2 JP 7033441B2
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Japan
Prior art keywords
focus ring
ring
support surface
electrode
plasma processing
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JP2017231776A
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English (en)
Japanese (ja)
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JP2019102638A5 (https=
JP2019102638A (ja
Inventor
雄大 上田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2017231776A priority Critical patent/JP7033441B2/ja
Priority to TW107141998A priority patent/TWI803539B/zh
Priority to CN201811434243.0A priority patent/CN109872939B/zh
Priority to KR1020180150530A priority patent/KR102603893B1/ko
Priority to US16/206,100 priority patent/US11201038B2/en
Publication of JP2019102638A publication Critical patent/JP2019102638A/ja
Publication of JP2019102638A5 publication Critical patent/JP2019102638A5/ja
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Publication of JP7033441B2 publication Critical patent/JP7033441B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Connection Of Plates (AREA)
JP2017231776A 2017-12-01 2017-12-01 プラズマ処理装置 Active JP7033441B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017231776A JP7033441B2 (ja) 2017-12-01 2017-12-01 プラズマ処理装置
TW107141998A TWI803539B (zh) 2017-12-01 2018-11-26 支持組件及支持組件之組裝方法
CN201811434243.0A CN109872939B (zh) 2017-12-01 2018-11-28 支承组件和支承组件的组装方法
KR1020180150530A KR102603893B1 (ko) 2017-12-01 2018-11-29 플라즈마 처리 장치
US16/206,100 US11201038B2 (en) 2017-12-01 2018-11-30 Support assembly and support assembly assembling method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017231776A JP7033441B2 (ja) 2017-12-01 2017-12-01 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2019102638A JP2019102638A (ja) 2019-06-24
JP2019102638A5 JP2019102638A5 (https=) 2020-10-08
JP7033441B2 true JP7033441B2 (ja) 2022-03-10

Family

ID=66659508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017231776A Active JP7033441B2 (ja) 2017-12-01 2017-12-01 プラズマ処理装置

Country Status (5)

Country Link
US (1) US11201038B2 (https=)
JP (1) JP7033441B2 (https=)
KR (1) KR102603893B1 (https=)
CN (1) CN109872939B (https=)
TW (1) TWI803539B (https=)

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CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
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US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
KR102751528B1 (ko) 2020-09-01 2025-01-07 삼성전자주식회사 플라즈마 공정 장비
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CN115398602B (zh) * 2021-03-24 2025-02-21 株式会社日立高新技术 等离子处理装置以及等离子处理方法
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
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US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
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US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
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KR102896325B1 (ko) * 2021-11-09 2025-12-08 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
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Also Published As

Publication number Publication date
CN109872939A (zh) 2019-06-11
TW201929084A (zh) 2019-07-16
TWI803539B (zh) 2023-06-01
US11201038B2 (en) 2021-12-14
US20190172688A1 (en) 2019-06-06
KR102603893B1 (ko) 2023-11-17
CN109872939B (zh) 2022-01-28
JP2019102638A (ja) 2019-06-24
KR20190065141A (ko) 2019-06-11

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