JP2019009478A5 - - Google Patents
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- JP2019009478A5 JP2019009478A5 JP2018197978A JP2018197978A JP2019009478A5 JP 2019009478 A5 JP2019009478 A5 JP 2019009478A5 JP 2018197978 A JP2018197978 A JP 2018197978A JP 2018197978 A JP2018197978 A JP 2018197978A JP 2019009478 A5 JP2019009478 A5 JP 2019009478A5
- Authority
- JP
- Japan
- Prior art keywords
- spin
- layer
- ferromagnetic metal
- interface
- current magnetization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000002184 metal Substances 0.000 claims 16
- 229910052751 metal Inorganic materials 0.000 claims 16
- 230000005415 magnetization Effects 0.000 claims 15
- 230000005294 ferromagnetic effect Effects 0.000 claims 13
- 239000000463 material Substances 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017034758 | 2017-02-27 | ||
| JP2017034758 | 2017-02-27 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018545671A Division JP6426330B1 (ja) | 2017-02-27 | 2018-01-26 | スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019009478A JP2019009478A (ja) | 2019-01-17 |
| JP2019009478A5 true JP2019009478A5 (enExample) | 2019-02-28 |
| JP6642680B2 JP6642680B2 (ja) | 2020-02-12 |
Family
ID=63252554
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018545671A Active JP6426330B1 (ja) | 2017-02-27 | 2018-01-26 | スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
| JP2018197978A Active JP6642680B2 (ja) | 2017-02-27 | 2018-10-19 | スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018545671A Active JP6426330B1 (ja) | 2017-02-27 | 2018-01-26 | スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10593388B2 (enExample) |
| EP (1) | EP3442030B1 (enExample) |
| JP (2) | JP6426330B1 (enExample) |
| CN (1) | CN108886061B (enExample) |
| WO (1) | WO2018155077A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6690805B1 (ja) * | 2018-05-31 | 2020-04-28 | Tdk株式会社 | スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
| TWI835846B (zh) * | 2018-09-05 | 2024-03-21 | 學校法人慶應義塾 | 自旋電子裝置、磁性記憶體及電子機器 |
| WO2020095360A1 (ja) * | 2018-11-06 | 2020-05-14 | Tdk株式会社 | 磁壁移動素子、磁壁移動型磁気記録素子及び磁気記録アレイ |
| CN109888089A (zh) * | 2019-01-28 | 2019-06-14 | 北京航空航天大学 | 一种制备sot-mram底电极的方法 |
| JP2020155488A (ja) * | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 磁気記憶装置 |
| JP2021044429A (ja) * | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | 磁気記憶装置 |
| JP7478429B2 (ja) * | 2019-10-03 | 2024-05-07 | 国立大学法人京都大学 | 磁気メモリ素子 |
| JP2021072138A (ja) | 2019-10-29 | 2021-05-06 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | レーストラック磁気メモリ装置、及びその書き込み方法 |
| JP2021090041A (ja) | 2019-11-26 | 2021-06-10 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法 |
| IL276842B (en) * | 2020-08-20 | 2021-12-01 | Yeda Res & Dev | Spin current and magnetoresistance from the orbital Hall effect |
| WO2022102122A1 (ja) | 2020-11-16 | 2022-05-19 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
| US11805706B2 (en) | 2021-03-04 | 2023-10-31 | Tdk Corporation | Magnetoresistance effect element and magnetic memory |
| US11793001B2 (en) | 2021-08-13 | 2023-10-17 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory |
| US12020736B2 (en) | 2021-08-13 | 2024-06-25 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory array |
| US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
| KR20230040533A (ko) | 2021-09-16 | 2023-03-23 | 삼성전자주식회사 | 자기 저항 메모리 소자 |
| US20230263074A1 (en) * | 2022-02-16 | 2023-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory Device Including Bottom Electrode Bridges and Method of Manufacture |
| KR20240060307A (ko) | 2022-10-28 | 2024-05-08 | 삼성전자주식회사 | 스핀 궤도 토크(Spin Orbit Torque) 자기 메모리 및 그 동작 방법과 자기 메모리를 포함하는 전자장치 |
| FR3156233A1 (fr) * | 2023-12-04 | 2025-06-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d’une mémoire à effet de couple de spin-orbite |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4380707B2 (ja) * | 2007-01-19 | 2009-12-09 | ソニー株式会社 | 記憶素子 |
| US7800938B2 (en) * | 2008-08-07 | 2010-09-21 | Seagate Technology, Llc | Oscillating current assisted spin torque magnetic memory |
| EP2190022B1 (en) * | 2008-11-20 | 2013-01-02 | Hitachi Ltd. | Spin-polarised charge carrier device |
| FR2963152B1 (fr) * | 2010-07-26 | 2013-03-29 | Centre Nat Rech Scient | Element de memoire magnetique |
| FR2963153B1 (fr) | 2010-07-26 | 2013-04-26 | Centre Nat Rech Scient | Element magnetique inscriptible |
| JP5768494B2 (ja) * | 2011-05-19 | 2015-08-26 | ソニー株式会社 | 記憶素子、記憶装置 |
| US9105832B2 (en) | 2011-08-18 | 2015-08-11 | Cornell University | Spin hall effect magnetic apparatus, method and applications |
| JP5982795B2 (ja) * | 2011-11-30 | 2016-08-31 | ソニー株式会社 | 記憶素子、記憶装置 |
| US9076537B2 (en) * | 2012-08-26 | 2015-07-07 | Samsung Electronics Co., Ltd. | Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction |
| JP6143051B2 (ja) * | 2012-10-19 | 2017-06-07 | 国立大学法人東北大学 | スピントロニクスデバイス |
| KR102023626B1 (ko) * | 2013-01-25 | 2019-09-20 | 삼성전자 주식회사 | 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법 |
| KR101882604B1 (ko) * | 2014-05-12 | 2018-08-24 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 결정 배향층 적층 구조체, 전자 메모리 및 결정 배향층 적층 구조체의 제조 방법 |
| KR102080631B1 (ko) * | 2014-08-08 | 2020-02-24 | 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 | 자기 저항 효과 소자 및 자기 메모리 장치 |
| US10037789B2 (en) * | 2014-10-21 | 2018-07-31 | Nec Corporation | Magnetic memory and method for writing data into magnetic memory element |
| CN105161613A (zh) * | 2015-08-18 | 2015-12-16 | 北京航空航天大学 | 一种基于双势垒结构的磁存储器件 |
| WO2017155510A1 (en) * | 2016-03-07 | 2017-09-14 | Intel Corporation | Spin and charge interconnects with rashba effects |
| JP6733496B2 (ja) * | 2016-10-27 | 2020-07-29 | Tdk株式会社 | スピン軌道トルク型磁化反転素子及び磁気メモリ |
| CN106449970B (zh) * | 2016-11-03 | 2019-03-15 | 北京航空航天大学 | 一种低功耗磁性存储单元 |
| CN113659071B (zh) | 2017-02-27 | 2024-04-09 | Tdk株式会社 | 自旋流磁化旋转元件、磁阻效应元件及磁存储器 |
-
2018
- 2018-01-26 US US16/080,848 patent/US10593388B2/en active Active
- 2018-01-26 WO PCT/JP2018/002466 patent/WO2018155077A1/ja not_active Ceased
- 2018-01-26 EP EP18757900.8A patent/EP3442030B1/en active Active
- 2018-01-26 CN CN201880001516.4A patent/CN108886061B/zh active Active
- 2018-01-26 JP JP2018545671A patent/JP6426330B1/ja active Active
- 2018-10-19 JP JP2018197978A patent/JP6642680B2/ja active Active
-
2020
- 2020-02-10 US US16/785,987 patent/US10854258B2/en active Active
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