JP6426330B1 - スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ - Google Patents

スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ Download PDF

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JP6426330B1
JP6426330B1 JP2018545671A JP2018545671A JP6426330B1 JP 6426330 B1 JP6426330 B1 JP 6426330B1 JP 2018545671 A JP2018545671 A JP 2018545671A JP 2018545671 A JP2018545671 A JP 2018545671A JP 6426330 B1 JP6426330 B1 JP 6426330B1
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JPWO2018155077A1 (ja
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陽平 塩川
陽平 塩川
智生 佐々木
智生 佐々木
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TDK Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2018545671A 2017-02-27 2018-01-26 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ Active JP6426330B1 (ja)

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PCT/JP2018/002466 WO2018155077A1 (ja) 2017-02-27 2018-01-26 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ

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JP2018197978A Active JP6642680B2 (ja) 2017-02-27 2018-10-19 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ

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US (2) US10593388B2 (enExample)
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WO (1) WO2018155077A1 (enExample)

Cited By (2)

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US11805706B2 (en) 2021-03-04 2023-10-31 Tdk Corporation Magnetoresistance effect element and magnetic memory
US12464959B2 (en) 2020-11-16 2025-11-04 Tdk Corporation Magnetization rotational element, magnetoresistive effect element, and magnetic memory

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JP6690805B1 (ja) * 2018-05-31 2020-04-28 Tdk株式会社 スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
TWI835846B (zh) * 2018-09-05 2024-03-21 學校法人慶應義塾 自旋電子裝置、磁性記憶體及電子機器
WO2020095360A1 (ja) * 2018-11-06 2020-05-14 Tdk株式会社 磁壁移動素子、磁壁移動型磁気記録素子及び磁気記録アレイ
CN109888089A (zh) * 2019-01-28 2019-06-14 北京航空航天大学 一种制备sot-mram底电极的方法
JP2020155488A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 磁気記憶装置
JP2021044429A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 磁気記憶装置
JP7478429B2 (ja) * 2019-10-03 2024-05-07 国立大学法人京都大学 磁気メモリ素子
JP2021072138A (ja) 2019-10-29 2021-05-06 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． レーストラック磁気メモリ装置、及びその書き込み方法
JP2021090041A (ja) 2019-11-26 2021-06-10 Tdk株式会社 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法
IL276842B (en) * 2020-08-20 2021-12-01 Yeda Res & Dev Spin current and magnetoresistance from the orbital Hall effect
US11793001B2 (en) 2021-08-13 2023-10-17 International Business Machines Corporation Spin-orbit-torque magnetoresistive random-access memory
US12020736B2 (en) 2021-08-13 2024-06-25 International Business Machines Corporation Spin-orbit-torque magnetoresistive random-access memory array
US11915734B2 (en) 2021-08-13 2024-02-27 International Business Machines Corporation Spin-orbit-torque magnetoresistive random-access memory with integrated diode
KR20230040533A (ko) 2021-09-16 2023-03-23 삼성전자주식회사 자기 저항 메모리 소자
US20230263074A1 (en) * 2022-02-16 2023-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Memory Device Including Bottom Electrode Bridges and Method of Manufacture
KR20240060307A (ko) 2022-10-28 2024-05-08 삼성전자주식회사 스핀 궤도 토크(Spin Orbit Torque) 자기 메모리 및 그 동작 방법과 자기 메모리를 포함하는 전자장치
FR3156233A1 (fr) * 2023-12-04 2025-06-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d’une mémoire à effet de couple de spin-orbite

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JP2014045196A (ja) * 2012-08-26 2014-03-13 Samsung Electronics Co Ltd スイッチングに基づいたスピン軌道相互作用を使用する磁気トンネルリング接合と、磁気トンネルリング接合を利用するメモリを提供するための方法及びシステム
JP2014086448A (ja) * 2012-10-19 2014-05-12 Tohoku Univ スピントロニクスデバイス
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US12464959B2 (en) 2020-11-16 2025-11-04 Tdk Corporation Magnetization rotational element, magnetoresistive effect element, and magnetic memory
US11805706B2 (en) 2021-03-04 2023-10-31 Tdk Corporation Magnetoresistance effect element and magnetic memory

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JP6642680B2 (ja) 2020-02-12
CN108886061B (zh) 2021-11-16
WO2018155077A1 (ja) 2018-08-30
JPWO2018155077A1 (ja) 2019-02-28
US20190057732A1 (en) 2019-02-21
US10854258B2 (en) 2020-12-01
EP3442030B1 (en) 2021-04-07
EP3442030A1 (en) 2019-02-13
EP3442030A4 (en) 2019-11-27
JP2019009478A (ja) 2019-01-17
US10593388B2 (en) 2020-03-17
US20200176043A1 (en) 2020-06-04
CN108886061A (zh) 2018-11-23

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