JP2018528621A5 - - Google Patents
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- Publication number
- JP2018528621A5 JP2018528621A5 JP2018515543A JP2018515543A JP2018528621A5 JP 2018528621 A5 JP2018528621 A5 JP 2018528621A5 JP 2018515543 A JP2018515543 A JP 2018515543A JP 2018515543 A JP2018515543 A JP 2018515543A JP 2018528621 A5 JP2018528621 A5 JP 2018528621A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- sidewall
- dopant
- sidewalls
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims 14
- 238000000151 deposition Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000012528 membrane Substances 0.000 claims 3
- 238000003672 processing method Methods 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 229910004166 TaN Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562232027P | 2015-09-24 | 2015-09-24 | |
| US62/232,027 | 2015-09-24 | ||
| PCT/US2016/053099 WO2017053558A1 (en) | 2015-09-24 | 2016-09-22 | Method for bottom-up deposition of a film in a recessed feature |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018528621A JP2018528621A (ja) | 2018-09-27 |
| JP2018528621A5 true JP2018528621A5 (enExample) | 2019-10-31 |
| JP6842616B2 JP6842616B2 (ja) | 2021-03-17 |
Family
ID=58387284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018515543A Active JP6842616B2 (ja) | 2015-09-24 | 2016-09-22 | 凹部フィーチャ内での膜のボトムアップ式付着のための方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10079151B2 (enExample) |
| JP (1) | JP6842616B2 (enExample) |
| KR (1) | KR102522329B1 (enExample) |
| TW (1) | TWI656580B (enExample) |
| WO (1) | WO2017053558A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018200211A1 (en) * | 2017-04-24 | 2018-11-01 | Applied Materials, Inc. | Methods for gapfill in high aspect ratio structures |
| JP7443250B2 (ja) * | 2018-05-16 | 2024-03-05 | アプライド マテリアルズ インコーポレイテッド | 原子層自己整合基板の処理及び統合型ツールセット |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI236053B (en) * | 2003-11-25 | 2005-07-11 | Promos Technologies Inc | Method of selectively etching HSG layer in deep trench capacitor fabrication |
| US7041553B2 (en) | 2004-06-02 | 2006-05-09 | International Business Machines Corporation | Process for forming a buried plate |
| US7148155B1 (en) * | 2004-10-26 | 2006-12-12 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
| KR100744071B1 (ko) | 2006-03-31 | 2007-07-30 | 주식회사 하이닉스반도체 | 벌브형 리세스 게이트를 갖는 반도체 소자의 제조방법 |
| US7838928B2 (en) * | 2008-06-06 | 2010-11-23 | Qimonda Ag | Word line to bit line spacing method and apparatus |
| US8592266B2 (en) | 2010-10-27 | 2013-11-26 | International Business Machines Corporation | Replacement gate MOSFET with a high performance gate electrode |
| US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
| US8846536B2 (en) | 2012-03-05 | 2014-09-30 | Novellus Systems, Inc. | Flowable oxide film with tunable wet etch rate |
| KR101955321B1 (ko) * | 2012-07-25 | 2019-03-07 | 파워 인티그레이션즈, 인크. | 테이퍼진 산화물의 형성 방법 |
| US8765609B2 (en) * | 2012-07-25 | 2014-07-01 | Power Integrations, Inc. | Deposit/etch for tapered oxide |
| US9177780B2 (en) | 2012-10-02 | 2015-11-03 | Applied Materials, Inc. | Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition |
| US9728623B2 (en) * | 2013-06-19 | 2017-08-08 | Varian Semiconductor Equipment Associates, Inc. | Replacement metal gate transistor |
| US9460932B2 (en) | 2013-11-11 | 2016-10-04 | Applied Materials, Inc. | Surface poisoning using ALD for high selectivity deposition of high aspect ratio features |
| US9385222B2 (en) * | 2014-02-14 | 2016-07-05 | Infineon Technologies Ag | Semiconductor device with insert structure at a rear side and method of manufacturing |
-
2016
- 2016-09-22 KR KR1020187009280A patent/KR102522329B1/ko active Active
- 2016-09-22 US US15/273,124 patent/US10079151B2/en active Active
- 2016-09-22 WO PCT/US2016/053099 patent/WO2017053558A1/en not_active Ceased
- 2016-09-22 JP JP2018515543A patent/JP6842616B2/ja active Active
- 2016-09-23 TW TW105130711A patent/TWI656580B/zh active
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