JP6842616B2 - 凹部フィーチャ内での膜のボトムアップ式付着のための方法 - Google Patents

凹部フィーチャ内での膜のボトムアップ式付着のための方法 Download PDF

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JP6842616B2
JP6842616B2 JP2018515543A JP2018515543A JP6842616B2 JP 6842616 B2 JP6842616 B2 JP 6842616B2 JP 2018515543 A JP2018515543 A JP 2018515543A JP 2018515543 A JP2018515543 A JP 2018515543A JP 6842616 B2 JP6842616 B2 JP 6842616B2
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JP2018528621A (ja
JP2018528621A5 (enExample
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エヌ． タピリー，カンダバラ
エヌ． タピリー，カンダバラ
エル． オメーラ，デイヴィッド
エル． オメーラ，デイヴィッド
エー． クマール，カウシィク
エー． クマール，カウシィク
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Tokyo Electron Ltd
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP2018515543A 2015-09-24 2016-09-22 凹部フィーチャ内での膜のボトムアップ式付着のための方法 Active JP6842616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562232027P 2015-09-24 2015-09-24
US62/232,027 2015-09-24
PCT/US2016/053099 WO2017053558A1 (en) 2015-09-24 2016-09-22 Method for bottom-up deposition of a film in a recessed feature

Publications (3)

Publication Number Publication Date
JP2018528621A JP2018528621A (ja) 2018-09-27
JP2018528621A5 JP2018528621A5 (enExample) 2019-10-31
JP6842616B2 true JP6842616B2 (ja) 2021-03-17

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JP2018515543A Active JP6842616B2 (ja) 2015-09-24 2016-09-22 凹部フィーチャ内での膜のボトムアップ式付着のための方法

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US (1) US10079151B2 (enExample)
JP (1) JP6842616B2 (enExample)
KR (1) KR102522329B1 (enExample)
TW (1) TWI656580B (enExample)
WO (1) WO2017053558A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018200211A1 (en) * 2017-04-24 2018-11-01 Applied Materials, Inc. Methods for gapfill in high aspect ratio structures
JP7443250B2 (ja) * 2018-05-16 2024-03-05 アプライド マテリアルズ インコーポレイテッド 原子層自己整合基板の処理及び統合型ツールセット

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI236053B (en) * 2003-11-25 2005-07-11 Promos Technologies Inc Method of selectively etching HSG layer in deep trench capacitor fabrication
US7041553B2 (en) 2004-06-02 2006-05-09 International Business Machines Corporation Process for forming a buried plate
US7148155B1 (en) * 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
KR100744071B1 (ko) 2006-03-31 2007-07-30 주식회사 하이닉스반도체 벌브형 리세스 게이트를 갖는 반도체 소자의 제조방법
US7838928B2 (en) * 2008-06-06 2010-11-23 Qimonda Ag Word line to bit line spacing method and apparatus
US8592266B2 (en) 2010-10-27 2013-11-26 International Business Machines Corporation Replacement gate MOSFET with a high performance gate electrode
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
KR101955321B1 (ko) * 2012-07-25 2019-03-07 파워 인티그레이션즈, 인크. 테이퍼진 산화물의 형성 방법
US8765609B2 (en) * 2012-07-25 2014-07-01 Power Integrations, Inc. Deposit/etch for tapered oxide
US9177780B2 (en) 2012-10-02 2015-11-03 Applied Materials, Inc. Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
US9728623B2 (en) * 2013-06-19 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Replacement metal gate transistor
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
US9385222B2 (en) * 2014-02-14 2016-07-05 Infineon Technologies Ag Semiconductor device with insert structure at a rear side and method of manufacturing

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JP2018528621A (ja) 2018-09-27
WO2017053558A1 (en) 2017-03-30
KR20180048971A (ko) 2018-05-10
TWI656580B (zh) 2019-04-11
US20170092508A1 (en) 2017-03-30
KR102522329B1 (ko) 2023-04-14
TW201714226A (zh) 2017-04-16
US10079151B2 (en) 2018-09-18

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