|
US5949600A
(en)
|
1995-09-06 |
1999-09-07 |
Kabushiki Kaisha Toshiba |
Signal reproduction method and magnetic recording and reproducing apparatus using tunnel current
|
|
JP3091398B2
(ja)
|
1995-09-14 |
2000-09-25 |
科学技術振興事業団 |
磁気−インピーダンス素子及びその製造方法
|
|
US5640343A
(en)
|
1996-03-18 |
1997-06-17 |
International Business Machines Corporation |
Magnetic memory array using magnetic tunnel junction devices in the memory cells
|
|
US6048632A
(en)
|
1997-08-22 |
2000-04-11 |
Nec Research Institute |
Self-biasing, non-magnetic, giant magnetoresistance sensor
|
|
US5898548A
(en)
|
1997-10-24 |
1999-04-27 |
International Business Machines Corporation |
Shielded magnetic tunnel junction magnetoresistive read head
|
|
JP4409656B2
(ja)
*
|
1998-03-20 |
2010-02-03 |
株式会社東芝 |
磁気抵抗効果素子及び磁気再生装置
|
|
US6483736B2
(en)
|
1998-11-16 |
2002-11-19 |
Matrix Semiconductor, Inc. |
Vertically stacked field programmable nonvolatile memory and method of fabrication
|
|
US6034882A
(en)
|
1998-11-16 |
2000-03-07 |
Matrix Semiconductor, Inc. |
Vertically stacked field programmable nonvolatile memory and method of fabrication
|
|
US6788502B1
(en)
*
|
1999-09-02 |
2004-09-07 |
International Business Machines Corporation |
Co-Fe supermalloy free layer for magnetic tunnel junction heads
|
|
US6538921B2
(en)
*
|
2000-08-17 |
2003-03-25 |
Nve Corporation |
Circuit selection of magnetic memory cells and related cell structures
|
|
FR2817999B1
(fr)
|
2000-12-07 |
2003-01-10 |
Commissariat Energie Atomique |
Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
|
|
US6646297B2
(en)
|
2000-12-26 |
2003-11-11 |
Ovonyx, Inc. |
Lower electrode isolation in a double-wide trench
|
|
WO2002058167A1
(en)
*
|
2001-01-19 |
2002-07-25 |
Matsushita Electric Industrial Co., Ltd. |
Spin switch and magnaetic storage elemet using it
|
|
US6600184B1
(en)
|
2002-03-25 |
2003-07-29 |
International Business Machines Corporation |
System and method for improving magnetic tunnel junction sensor magnetoresistance
|
|
JP2006511965A
(ja)
|
2002-12-19 |
2006-04-06 |
マトリックス セミコンダクター インコーポレイテッド |
高密度不揮発性メモリを製作するための改良された方法
|
|
US7233024B2
(en)
|
2003-03-31 |
2007-06-19 |
Sandisk 3D Llc |
Three-dimensional memory device incorporating segmented bit line memory array
|
|
KR100512180B1
(ko)
*
|
2003-07-10 |
2005-09-02 |
삼성전자주식회사 |
자기 랜덤 엑세스 메모리 소자의 자기 터널 접합 및 그의형성방법
|
|
JP4142993B2
(ja)
|
2003-07-23 |
2008-09-03 |
株式会社東芝 |
磁気メモリ装置の製造方法
|
|
US7009278B2
(en)
|
2003-11-24 |
2006-03-07 |
Sharp Laboratories Of America, Inc. |
3d rram
|
|
US6946697B2
(en)
|
2003-12-18 |
2005-09-20 |
Freescale Semiconductor, Inc. |
Synthetic antiferromagnet structures for use in MTJs in MRAM technology
|
|
US7082052B2
(en)
|
2004-02-06 |
2006-07-25 |
Unity Semiconductor Corporation |
Multi-resistive state element with reactive metal
|
|
US7098495B2
(en)
|
2004-07-26 |
2006-08-29 |
Freescale Semiconducor, Inc. |
Magnetic tunnel junction element structures and methods for fabricating the same
|
|
US7324313B2
(en)
|
2004-09-30 |
2008-01-29 |
Hitachi Global Storage Technologies Netherlands B.V. |
Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability
|
|
US7351483B2
(en)
|
2004-11-10 |
2008-04-01 |
International Business Machines Corporation |
Magnetic tunnel junctions using amorphous materials as reference and free layers
|
|
US7423849B2
(en)
|
2005-09-19 |
2008-09-09 |
Hitachi Global Sotrage Technologies Netherlands B.V. |
Magnetoresistive (MR) elements having pinned layers with canted magnetic moments
|
|
US7532442B2
(en)
|
2005-09-19 |
2009-05-12 |
Hitachi Global Storage Technologies Netherlands B.V. |
Magnetoresistive (MR) elements having pinning layers formed from permanent magnetic material
|
|
US20070096229A1
(en)
|
2005-10-28 |
2007-05-03 |
Masatoshi Yoshikawa |
Magnetoresistive element and magnetic memory device
|
|
US8508984B2
(en)
|
2006-02-25 |
2013-08-13 |
Avalanche Technology, Inc. |
Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
|
|
US7732881B2
(en)
|
2006-11-01 |
2010-06-08 |
Avalanche Technology, Inc. |
Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
|
|
JP4585476B2
(ja)
|
2006-03-16 |
2010-11-24 |
株式会社東芝 |
パターンド媒体および磁気記録装置
|
|
US7528457B2
(en)
|
2006-04-14 |
2009-05-05 |
Magic Technologies, Inc. |
Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R
|
|
US7595520B2
(en)
|
2006-07-31 |
2009-09-29 |
Magic Technologies, Inc. |
Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
|
|
US7672089B2
(en)
*
|
2006-12-15 |
2010-03-02 |
Hitachi Global Storage Technologies Netherlands B.V. |
Current-perpendicular-to-plane sensor with dual keeper layers
|
|
US7598579B2
(en)
|
2007-01-30 |
2009-10-06 |
Magic Technologies, Inc. |
Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
|
|
US8623452B2
(en)
|
2010-12-10 |
2014-01-07 |
Avalanche Technology, Inc. |
Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
|
|
US20090218645A1
(en)
|
2007-02-12 |
2009-09-03 |
Yadav Technology Inc. |
multi-state spin-torque transfer magnetic random access memory
|
|
JP2008211058A
(ja)
|
2007-02-27 |
2008-09-11 |
Toshiba Corp |
磁気ランダムアクセスメモリ及びその書き込み方法
|
|
JP4682998B2
(ja)
|
2007-03-15 |
2011-05-11 |
ソニー株式会社 |
記憶素子及びメモリ
|
|
US7755076B2
(en)
|
2007-04-17 |
2010-07-13 |
Macronix International Co., Ltd. |
4F2 self align side wall active phase change memory
|
|
US8559141B1
(en)
|
2007-05-07 |
2013-10-15 |
Western Digital (Fremont), Llc |
Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
|
|
US20090046397A1
(en)
|
2007-08-15 |
2009-02-19 |
Freescale Semiconductor, Inc. |
Methods and apparatus for a synthetic anti-ferromagnet structure with improved thermal stability
|
|
US7932571B2
(en)
|
2007-10-11 |
2011-04-26 |
Everspin Technologies, Inc. |
Magnetic element having reduced current density
|
|
JPWO2009054062A1
(ja)
*
|
2007-10-26 |
2011-03-03 |
キヤノンアネルバ株式会社 |
サンドイッチ構造の磁化自由層を有する磁気トンネル接合素子
|
|
JP2009140952A
(ja)
*
|
2007-12-03 |
2009-06-25 |
Fujitsu Ltd |
Ｃｐｐ構造磁気抵抗効果素子およびその製造方法並びに記憶装置
|
|
KR20090109804A
(ko)
|
2008-04-16 |
2009-10-21 |
삼성전자주식회사 |
비휘발성 메모리 소자 및 그 제조 방법
|
|
US8098520B2
(en)
|
2008-04-25 |
2012-01-17 |
Seagate Technology Llc |
Storage device including a memory cell having multiple memory layers
|
|
KR20100001260A
(ko)
|
2008-06-26 |
2010-01-06 |
삼성전자주식회사 |
비휘발성 메모리 소자 및 그 제조 방법
|
|
US7732235B2
(en)
|
2008-06-30 |
2010-06-08 |
Sandisk 3D Llc |
Method for fabricating high density pillar structures by double patterning using positive photoresist
|
|
JP2010034153A
(ja)
|
2008-07-25 |
2010-02-12 |
Toshiba Corp |
磁気ランダムアクセスメモリおよびその書き込み方法
|
|
JP5203844B2
(ja)
*
|
2008-08-07 |
2013-06-05 |
ルネサスエレクトロニクス株式会社 |
半導体装置およびその製造方法
|
|
WO2010026667A1
(en)
|
2008-09-03 |
2010-03-11 |
Canon Anelva Corporation |
Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
|
|
JP2010080806A
(ja)
|
2008-09-29 |
2010-04-08 |
Canon Anelva Corp |
磁気抵抗素子の製造法及びその記憶媒体
|
|
US8310861B2
(en)
|
2008-09-30 |
2012-11-13 |
Micron Technology, Inc. |
STT-MRAM cell structure incorporating piezoelectric stress material
|
|
US8102700B2
(en)
|
2008-09-30 |
2012-01-24 |
Micron Technology, Inc. |
Unidirectional spin torque transfer magnetic memory cell structure
|
|
US7944738B2
(en)
|
2008-11-05 |
2011-05-17 |
Micron Technology, Inc. |
Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
|
|
US20100135061A1
(en)
|
2008-12-02 |
2010-06-03 |
Shaoping Li |
Non-Volatile Memory Cell with Ferroelectric Layer Configurations
|
|
KR101583717B1
(ko)
|
2009-01-13 |
2016-01-11 |
삼성전자주식회사 |
저항 메모리 장치의 제조방법
|
|
WO2010101340A1
(ko)
|
2009-03-05 |
2010-09-10 |
광주과학기술원 |
3차원 구조를 갖는 저항 변화 메모리 소자, 저항 변화 메모리 소자 어레이, 전자제품 및 상기 소자 제조방법
|
|
JP4810581B2
(ja)
|
2009-03-25 |
2011-11-09 |
株式会社東芝 |
不揮発性記憶装置
|
|
US7983065B2
(en)
|
2009-04-08 |
2011-07-19 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
|
|
US8351236B2
(en)
|
2009-04-08 |
2013-01-08 |
Sandisk 3D Llc |
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
|
|
JP2010263211A
(ja)
|
2009-05-04 |
2010-11-18 |
Samsung Electronics Co Ltd |
積層メモリ素子
|
|
US9082534B2
(en)
|
2009-09-15 |
2015-07-14 |
Samsung Electronics Co., Ltd. |
Magnetic element having perpendicular anisotropy with enhanced efficiency
|
|
JP5462272B2
(ja)
|
2009-10-05 |
2014-04-02 |
キヤノンアネルバ株式会社 |
基板冷却装置、スパッタリング装置および電子デバイスの製造方法
|
|
US8238151B2
(en)
|
2009-12-18 |
2012-08-07 |
Micron Technology, Inc. |
Transient heat assisted STTRAM cell for lower programming current
|
|
JP5175886B2
(ja)
*
|
2010-03-17 |
2013-04-03 |
株式会社東芝 |
磁気抵抗効果素子および磁気メモリ
|
|
JP2012059808A
(ja)
|
2010-09-07 |
2012-03-22 |
Sony Corp |
記憶素子、メモリ装置
|
|
US9647202B2
(en)
|
2011-02-16 |
2017-05-09 |
Avalanche Technology, Inc. |
Magnetic random access memory with perpendicular enhancement layer
|
|
JP5123365B2
(ja)
|
2010-09-16 |
2013-01-23 |
株式会社東芝 |
磁気抵抗素子及び磁気メモリ
|
|
JP5514059B2
(ja)
|
2010-09-17 |
2014-06-04 |
株式会社東芝 |
磁気抵抗効果素子及び磁気ランダムアクセスメモリ
|
|
US8345471B2
(en)
|
2010-10-07 |
2013-01-01 |
Hynix Semiconductor Inc. |
Magneto-resistance element and semiconductor memory device including the same
|
|
US8427791B2
(en)
|
2010-11-23 |
2013-04-23 |
HGST Netherlands B.V. |
Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same
|
|
US9454997B2
(en)
|
2010-12-02 |
2016-09-27 |
Micron Technology, Inc. |
Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
|
|
US9070464B2
(en)
|
2010-12-10 |
2015-06-30 |
Avalanche Technology, Inc. |
Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
|
|
US9028910B2
(en)
|
2010-12-10 |
2015-05-12 |
Avalanche Technology, Inc. |
MTJ manufacturing method utilizing in-situ annealing and etch back
|
|
US8431458B2
(en)
|
2010-12-27 |
2013-04-30 |
Micron Technology, Inc. |
Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
|
|
EP2477227B1
(en)
|
2011-01-13 |
2019-03-27 |
Crocus Technology S.A. |
Magnetic tunnel junction comprising a polarizing layer
|
|
JP2012204432A
(ja)
|
2011-03-24 |
2012-10-22 |
Toshiba Corp |
磁気ランダムアクセスメモリ及びその製造方法
|
|
US8790798B2
(en)
|
2011-04-18 |
2014-07-29 |
Alexander Mikhailovich Shukh |
Magnetoresistive element and method of manufacturing the same
|
|
US8541855B2
(en)
|
2011-05-10 |
2013-09-24 |
Magic Technologies, Inc. |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
|
|
US8507114B2
(en)
|
2011-06-30 |
2013-08-13 |
Seagate Technology Llc |
Recording layer for heat assisted magnetic recording
|
|
JP2013041912A
(ja)
|
2011-08-12 |
2013-02-28 |
Toshiba Corp |
磁気ランダムアクセスメモリ
|
|
JP2013115413A
(ja)
|
2011-12-01 |
2013-06-10 |
Sony Corp |
記憶素子、記憶装置
|
|
US9058885B2
(en)
|
2011-12-07 |
2015-06-16 |
Agency For Science, Technology And Research |
Magnetoresistive device and a writing method for a magnetoresistive device
|
|
JP2013140891A
(ja)
|
2012-01-05 |
2013-07-18 |
Toshiba Corp |
磁気抵抗効果素子の製造方法
|
|
US8871365B2
(en)
|
2012-02-28 |
2014-10-28 |
Headway Technologies, Inc. |
High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
|
|
US8617644B2
(en)
|
2012-03-08 |
2013-12-31 |
HGST Netherlands B.V. |
Method for making a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor containing a ferromagnetic alloy requiring post-deposition annealing
|
|
US20130307097A1
(en)
|
2012-05-15 |
2013-11-21 |
Ge Yi |
Magnetoresistive random access memory cell design
|
|
US9214624B2
(en)
|
2012-07-27 |
2015-12-15 |
Qualcomm Incorporated |
Amorphous spacerlattice spacer for perpendicular MTJs
|
|
WO2014022304A1
(en)
|
2012-07-30 |
2014-02-06 |
The Regents Of The University Of California |
Multiple-bits-per-cell voltage-controlled magnetic memory
|
|
JP5597899B2
(ja)
|
2012-09-21 |
2014-10-01 |
株式会社東芝 |
磁気抵抗素子および磁気メモリ
|
|
US8836056B2
(en)
|
2012-09-26 |
2014-09-16 |
Intel Corporation |
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
|
|
KR101967352B1
(ko)
|
2012-10-31 |
2019-04-10 |
삼성전자주식회사 |
자기 메모리 소자 및 그 제조 방법
|
|
JP5680045B2
(ja)
|
2012-11-14 |
2015-03-04 |
株式会社東芝 |
磁気抵抗素子及び磁気メモリ
|
|
US9252710B2
(en)
|
2012-11-27 |
2016-02-02 |
Headway Technologies, Inc. |
Free layer with out-of-plane anisotropy for magnetic device applications
|
|
US10522589B2
(en)
|
2012-12-24 |
2019-12-31 |
Shanghai Ciyu Information Technologies Co., Ltd. |
Method of making a magnetoresistive element
|
|
US20140203383A1
(en)
|
2013-01-24 |
2014-07-24 |
T3Memory, Inc. |
Perpendicular magnetoresistive memory element
|
|
JP6155673B2
(ja)
*
|
2013-02-05 |
2017-07-05 |
富士通セミコンダクター株式会社 |
磁気抵抗素子とその製造方法、および磁気記憶装置
|
|
US9196335B2
(en)
|
2013-03-14 |
2015-11-24 |
Kabushiki Kaisha Toshiba |
Magnetic memory
|
|
US9184374B2
(en)
|
2013-03-22 |
2015-11-10 |
Kazuya Sawada |
Magnetoresistive element
|
|
WO2014188525A1
(ja)
*
|
2013-05-22 |
2014-11-27 |
株式会社日立製作所 |
スピン波デバイス及びスピン波デバイスを用いた論理回路
|
|
US9240547B2
(en)
|
2013-09-10 |
2016-01-19 |
Micron Technology, Inc. |
Magnetic tunnel junctions and methods of forming magnetic tunnel junctions
|
|
US9608197B2
(en)
|
2013-09-18 |
2017-03-28 |
Micron Technology, Inc. |
Memory cells, methods of fabrication, and semiconductor devices
|
|
JP2015060970A
(ja)
*
|
2013-09-19 |
2015-03-30 |
株式会社東芝 |
磁気抵抗素子および磁気メモリ
|
|
US9257638B2
(en)
|
2014-03-27 |
2016-02-09 |
Lam Research Corporation |
Method to etch non-volatile metal materials
|
|
JP6345037B2
(ja)
*
|
2014-08-26 |
2018-06-20 |
ルネサスエレクトロニクス株式会社 |
半導体装置およびその製造方法
|
|
US9099124B1
(en)
*
|
2014-09-28 |
2015-08-04 |
HGST Netherlands B.V. |
Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
|
|
US9373779B1
(en)
|
2014-12-08 |
2016-06-21 |
Micron Technology, Inc. |
Magnetic tunnel junctions
|
|
US9502642B2
(en)
|
2015-04-10 |
2016-11-22 |
Micron Technology, Inc. |
Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
|
|
US9520553B2
(en)
|
2015-04-15 |
2016-12-13 |
Micron Technology, Inc. |
Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction
|
|
US9530959B2
(en)
|
2015-04-15 |
2016-12-27 |
Micron Technology, Inc. |
Magnetic tunnel junctions
|
|
US9177573B1
(en)
|
2015-04-30 |
2015-11-03 |
HGST Netherlands B.V. |
Tunneling magnetoresistive (TMR) device with magnesium oxide tunneling barrier layer and free layer having insertion layer
|
|
US9257136B1
(en)
|
2015-05-05 |
2016-02-09 |
Micron Technology, Inc. |
Magnetic tunnel junctions
|
|
US9960346B2
(en)
|
2015-05-07 |
2018-05-01 |
Micron Technology, Inc. |
Magnetic tunnel junctions
|