WO2011043063A1 - 基板冷却装置、スパッタリング装置および電子デバイスの製造方法 - Google Patents
基板冷却装置、スパッタリング装置および電子デバイスの製造方法 Download PDFInfo
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- WO2011043063A1 WO2011043063A1 PCT/JP2010/005968 JP2010005968W WO2011043063A1 WO 2011043063 A1 WO2011043063 A1 WO 2011043063A1 JP 2010005968 W JP2010005968 W JP 2010005968W WO 2011043063 A1 WO2011043063 A1 WO 2011043063A1
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- Prior art keywords
- substrate
- cooling gas
- recess
- cooling
- gas discharge
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- 239000000758 substrate Substances 0.000 title claims abstract description 274
- 238000001816 cooling Methods 0.000 title claims abstract description 40
- 238000004544 sputter deposition Methods 0.000 title claims description 24
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- 239000000956 alloy Substances 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Definitions
- the present invention relates to a substrate cooling apparatus, a sputtering apparatus, and an electronic device manufacturing method for cooling a substrate using a refrigerator.
- a method of performing sputtering while holding a substrate at a low temperature for controlling crystal growth.
- the possibility of forming an amorphous film can be expected by forming the substrate at a low temperature (for example, a minus region). This is because the sputtered particles adhere to the substrate and at the same time lose energy by the low-temperature substrate, and the surface movement of the particles can be suppressed.
- a low temperature for example, a minus region
- Patent Document 1 discloses a substrate holding device in which a cooling gas supply hole is provided in an electrostatic adsorption stage having a plurality of convex portions for electrostatic adsorption, and cooling gas can be introduced into the back side of the substrate adsorbed by the convex portions. Has been.
- the cooling gas is preferably hydrogen or helium, but helium, which is a rare gas, is desirable in view of the influence on the process. It is also possible to cool with argon gas.
- stages used for electrostatic adsorption can be used at room temperature or higher, and even at low temperatures, it is at most ⁇ 150 ° C. (123 K).
- substrate temperature is lowered to 50K, substrate fixing by electrostatic adsorption cannot be expected, and it is necessary to rely on a mechanical fixing method.
- a flexible seal such as silicon rubber is usually sandwiched between the substrate and the substrate stage or the substrate fixing member, and the cooling gas is sealed on the back side of the substrate.
- the cold resistance limit of most sealing materials is exceeded, and sufficient sealing performance cannot be ensured. For this reason, the cooling gas leaks from between the substrate end and the substrate stage or the substrate fixing member, and there is a problem that the reproducibility of the cooling state cannot be maintained in each substrate.
- the present invention has been made in view of the above-described problems. Even when a substrate is cooled using a refrigerator, a means capable of cooling with good reproducibility and reducing the cooling distribution in the substrate surface is provided. It is to provide.
- a substrate cooling apparatus includes a substrate holding table having a recess that forms a space between a mounting portion on which a substrate can be mounted and a substrate mounted on the mounting portion. , A holding member for generating a pressing force between the substrate holding table and fixing the substrate to the substrate holding table; A refrigerator connected to the substrate holder; A cooling gas introduction passage provided on the substrate holding base and having a cooling gas introduction hole that opens to the concave surface of the recess, and connects the space in the recess and the supply source of the cooling gas through the cooling gas introduction hole.
- cooling gas discharge hole provided in the substrate holding stand independently of the cooling gas introduction hole and opening in the concave surface of the recess, and the space in the recess and the exhaust device are connected via the cooling gas discharge hole. And a cooling gas discharge passage to be connected.
- the substrate holder is A base having a concave portion and a substrate holding surface formed on a convex portion around the concave portion, and a groove forming the cooling gas introduction passage or the cooling gas discharge passage formed on the bottom surface of the concave portion; And a sealing plate having the cooling gas introduction hole or the cooling gas discharge hole which is fitted into the bottom surface of the recess of the base and communicates with the groove of the base.
- the substrate holding base is maintained while maintaining the necessary strength for the substrate holding base. Therefore, it is possible to reduce the startup time until the substrate holding table is brought to a target temperature, and to increase the operating rate of the apparatus.
- the wall portion forming the cooling gas discharge hole has an attachment structure capable of attaching a conductance adjusting member for reducing the hole diameter of the cooling gas discharge hole to the inside. It is characterized by having.
- FIG. 1 is a view showing an example of a sputtering apparatus according to this embodiment.
- the sputtering apparatus 100 includes a sputtering cathode 102, a sputtering target 103, and a substrate holder 112 in a vacuum vessel 101.
- the process gas 110 can be introduced into the vacuum vessel 101 via a flow rate controller (mass flow controller: MFC) 110-1.
- the vacuum vessel 101 includes an exhaust mechanism 104 including an exhaust pump such as a turbo molecular pump for exhausting the process gas 110 and the impurity gas.
- the exhaust mechanism 104 can exhaust the inside of the vacuum vessel 101 to, for example, 20 Pa or less during the film forming process.
- the sputtering cathode 102 is connected to a high frequency power source 106 and a DC power source 107 through a matching unit 108 (M).
- the sputtering cathode 102 can be supplied with only high frequency power, supplied with high frequency + DC superposition, or supplied only with DC power.
- the DC power supply 107 is supplied without the matching unit 108 and the high-frequency power supply 106.
- a substrate holding ring 111 is provided on the substrate holding table 112 so that the substrate W can be pressed and fixed.
- the substrate holding table 112 is formed of a material having a high thermal conductivity such as copper or a copper alloy, and the substrate holding ring 111 is a material such as iron or an iron-based alloy (for example, stainless steel) having a lower thermal conductivity than the substrate holding table 112. Formed with.
- a refrigerator 105 for cooling the substrate holder 112 is connected to the lower part of the substrate holder 112.
- the refrigerator 105 may be either a type using a stilling cycle or a type using a GM (Gifford-McMahon) cycle, and is determined in consideration of a necessary refrigerating capacity.
- the cooling gas 109 can be introduced into the substrate holding table 112 attached to the refrigerator 105 via a flow rate controller (mass flow controller: MFC) 109-1 and provided inside the substrate holding table 112.
- the cooling gas 109 is blown to the installation surface of the substrate W through the passage 113.
- the cooling gas 109 may be any gas that is gasified at least at the target substrate cooling temperature.
- an inert gas such as hydrogen, helium, or argon can be used. Due to the heat transfer of the cooling gas, the heat of the substrate W is transmitted to the substrate holder 112 and the substrate W is cooled.
- gas pressure management may be performed using an automatic gas pressure controller (auto pleasure controller: APC) instead of the flow rate controller.
- the cooling gas 109 passes through the cooling gas discharge hole 114 and is mixed with the process gas as it is, or is released into the vacuum vessel 101 through an exhaust pipe connected to the exhaust mechanism 104 of the vacuum vessel 101. Without being guided to the exhaust mechanism 104, the air is exhausted. In this way, by sharing the exhaust mechanism 104 with that for the vacuum vessel 101, it can be configured simply and at low cost. Further, this exhaust pipe is also formed of a material having a lower thermal conductivity than the substrate holding table 112 such as stainless steel, so that heat from the vacuum vessel wall connected to the exhaust pipe or a support member of the pipe to the substrate holding table 112 can be obtained. Inflow can be suppressed and cooling efficiency can be maintained.
- the substrate holding table 112 is subjected to two-stage countersink processing, and a surface 210, a surface 211, and a surface 212 are formed which increase from the inner peripheral side toward the outer peripheral side.
- the substrate holding ring 111 is provided on the surface 212, and holds the substrate W between the surface 211 having an outer diameter larger than the substrate diameter (2b in FIG. 2).
- a gap d is formed between the surface 210 and the substrate W, and a recess surrounded by a step surface between the surfaces 210 and 211. Is formed.
- the substrate holding table 112 is provided with a cooling gas introduction hole 113 and a cooling gas discharge hole 114, so that the supply of the cooling gas and the exhaust of the cooling gas can be performed independently.
- the plurality of cooling gas introduction holes 113 opened on the surface 210 of the substrate holding table 112 share a gas supply source by a cooling gas introduction guide 201 provided on the bottom surface of the substrate holding table 112.
- a cooling gas introduction line 203 is connected to the cooling gas introduction guide 201.
- the cooling gas introduced into the substrate W is collected in the cooling gas discharge guide 202 of the plurality of cooling gas discharge holes 114 opened on the surface 210 of the substrate holding table 112.
- a cooling gas discharge line 204 is connected to the cooling gas discharge guide 202, and the cooling gas is discharged.
- the cooling gas introduction holes 113 and the cooling gas discharge holes 114 are interspersed so that the cooling gas can be widely dispersed in the surface, and local cooling due to the ejection pressure can be prevented.
- the pressure and flow rate on the back surface side of the substrate W are unified by guiding the scattered cooling gas introduction holes 113 from the common cooling gas introduction line and discharging the scattered cooling gas discharge holes 114 to the common discharge line. Can be controlled.
- FIG. 10 shows an operation example of the sputtering apparatus of the present embodiment.
- 1 includes a process gas introduction system such as MFC 110-1, a driving device (not shown) for driving the substrate holding ring 111 to a substrate holding position and a holding release position, a sputtering power source such as a DC power source 107 and a high frequency power source 106.
- the controller 105 is configured to send a command signal to the refrigerator 105 and the exhaust pump to execute a predetermined sequence.
- the controller con includes a storage unit 81 that stores a control program and an arithmetic processing unit 82 that performs arithmetic processing for process control.
- the arithmetic processing unit 82 can be configured by, for example, a personal computer (PC) or a microcomputer.
- the exhaust pump and the refrigerator 105 are driven (ON), the inside of the vacuum vessel 101 is maintained at a predetermined pressure or lower, and the substrate holding table 112 is placed. Is maintained at a predetermined temperature.
- the process gas is then introduced into the vacuum container 101 (t2 in FIG. 10).
- the substrate holding ring 111 is driven to fix the substrate to the substrate holding table 112 (t3 in FIG. 10), and the cooling gas is introduced to the back surface of the substrate (t4 in FIG. 10).
- the sputtering power supply is turned on after a predetermined cooling time T1 (t5 in FIG.
- the substrate holding table 112 is provided with a plurality of cooling gas introduction holes 113, and a common gas supply source is provided by the cooling gas introduction guide 201.
- the substrate holding table 112 is provided with grooves in a radial manner, and a cooling gas discharge groove 301 is formed.
- the cooling gas discharge groove 301 is formed by cutting out the surfaces 210 to 212 and opens to the side of the substrate holder 112 (3b in FIG. 3).
- the depth of the cooling gas discharge groove 301 may be deeper than the surface 210 or the same height.
- the cooling gas is discharged from the side of the substrate holder 112 to the inside of the vacuum vessel 101 maintained at a lower pressure than the recess of the substrate holder 112 through the cooling gas discharge groove 301, and is discharged by the exhaust mechanism 104. Exhausted.
- the surface 210 can be actively used for heat transfer by radiation by increasing the emissivity by performing an alumina spraying process or a black body process.
- the surface 211 may be mirror-finished, but since a passage for exhausting the cooling gas is provided, There is no gas leak.
- an O-ring groove 400 and an O-ring 401 may be provided on the surface 211 as shown in FIG. Is possible.
- the material of the O-ring 401 is desirably a cold resistant type, and silicon rubber is preferable. When used at a temperature lower than the cold resistance temperature of silicon rubber, a polyimide resin or polybenzimidazole (PBI resin) may be used.
- the O-ring 401 used here is not a sealing component for increasing the gas pressure on the back surface of the substrate, but for preventing damage to the substrate. In this example, since the gas discharge hole is secured, it is not necessary to perform sealing.
- the cooling gas introduction holes 113 and the cooling gas discharge holes 114 scattered in the substrate holding table 112 may be tapped and countersunk from the surface 210 side as shown in FIG.
- the countersinking is to prevent the screw head from jumping out from the surface 210.
- the gas pressure on the back surface of the substrate W can be adjusted by sealing with a necessary number of screws 501 and 502. If, for example, screws 501 and 502 are used as the conductance adjustment member and the number of cooling gas discharge holes 114 is reduced from the number of cooling gas introduction holes 113, the pressure on the back surface of the substrate W can be further increased. As a result, the cooling gas spreads over the entire back surface of the substrate W, and the substrate cooling temperature distribution can be suppressed.
- the number of the cooling gas discharge holes 114 and the number of the cooling gas introduction holes 113 can be easily increased / decreased without performing additional processing on the substrate holding table 112, and the pressure is increased to a range where the substrate does not warp. An example in which such adjustment is possible is shown.
- a screw provided with a through hole parallel to the screw rotation axis such as a screw 503 with a through hole
- the gas pressure on the back surface of the substrate W can be adjusted. For example, by making the through hole diameter of the through hole screw attached to the cooling gas discharge hole 114 smaller than the through hole diameter of the through hole screw attached to the cooling gas introduction hole 113, additional processing to the substrate holder 112 is performed.
- the size of the cooling gas introduction hole 113 and the cooling gas discharge hole 114 can be changed, and the gas pressure on the back surface of the substrate W can be adjusted.
- the thickness (screw diameter) is 4 mm or more, and the diameter of the through hole is preferably 1 mm or more. This is because if the thickness of the screw is less than 4 mm, the strength of the screw is lowered when the through hole is opened.
- the structural example of the cooling gas introduction guide 201 is shown in FIG.6 and FIG.7.
- the substrate holding table 715 is divided into two parts in the thickness direction, like a substrate holding table base 709 and a substrate holding table sealing plate 710.
- the substrate holding base 709 is configured such that a recess is formed on the inner periphery by countersink processing, and the substrate W can be held at the outer peripheral end.
- the bottom surface 700 of the recess is formed with a cooling gas introduction groove 703 and a base side cooling gas introduction hole 705 that communicates the cooling gas introduction groove 703 with the cooling gas supply source.
- a cooling gas discharge groove 704 formed on the inner peripheral side of the cooling gas introduction groove 703, and a base side cooling gas discharge that communicates the cooling gas discharge groove 704 with the cooling gas exhaust mechanism 104 are formed on the bottom surface 700 of the recess.
- a hole 706 is formed.
- a portion having a height different from that of the bottom surface 700 is indicated by hatching or hatching.
- the gas passage can be formed by brazing or screwing the substrate holding base sealing plate 710 to the upper portion of the bottom surface 700 of the substrate holding base 709.
- a sealing plate side cooling gas introduction hole 708 communicating with the cooling gas introduction groove 703 and a sealing plate side cooling gas exhaust hole 707 communicating with the cooling gas discharge groove 704 are formed through the substrate holding plate sealing plate 710. ing.
- the degree of freedom in design can be increased, and a device with a higher cooling effect can be configured.
- the length of the passage from the base side cooling gas introduction hole 705 to each sealing plate side cooling gas introduction hole 708 is substantially equal (relative difference (from the median value). Difference / median value) range of ⁇ 5%), and the lengths of the branch paths for introducing gas are set equal.
- the lengths of the branch paths in the discharge groove 704 are set to be approximately equal (range of relative difference (difference from median / median) ⁇ 5%). Thereby, the dispersion
- the branch path opened closer to the substrate transfer port is made longer or narrower than the far side, and the conductance. May be reduced.
- the branch path rather than dividing the gas introduction path and controlling it independently, thereby reducing the cost and making the cooling effect uniform. Can be planned.
- the gas introduction passages are provided on the outer peripheral side and the inner peripheral side, the same effect can be obtained even if the inner peripheral branch path is lengthened or narrowed to reduce the conductance.
- the flow rate of the cooling gas may be set to 3 sccm or more. This is because if it is less than 3 sccm, the substrate cooling efficiency is lowered. Even when the gas flow rate is increased, the gas discharge hole is provided in the application example of the present invention, so that the substrate W hardly warps and the substrate cooling temperature distribution can be kept low. However, when the number and size of the gas discharge holes can be adjusted as in the example shown in FIG. 5, a substrate W back surface pressure that warps the substrate W may be generated. In this case, if the gas pressure on the back surface of the substrate W is set to 500 Pa or less, the cooling temperature distribution due to the warp of the substrate W can be almost ignored.
- cooling gas introduction hole 113 may be provided only in the center, as described above, the cooling gas is dispersed when the cooling gas introduction holes 113 are scattered, and local cooling due to the ejection pressure is prevented. Therefore, it is preferable.
- the configuration is not limited to the configuration in which the cooling gas is introduced from the outer peripheral side and exhausted from the inner peripheral side, but the configuration in which the cooling gas is introduced from the inner peripheral side and exhausted to the outer peripheral side, Various configurations such as a configuration in which the cooling gas discharge holes 114 are provided, and a configuration in which the holes are scattered in a lattice shape instead of a concentric shape may be employed.
- the flow rate or flow pressure of the inner peripheral is larger than the outer periphery having a large volume, and Heat transfer on the inner peripheral side by the cooling gas that has already deprived of heat is promoted, and heat transfer efficiency can be made uniform on the inner and outer periphery, which is preferable.
- the bottom surface of the recess is a flat surface.
- the present invention is not limited to this, and a protrusion that induces a flow may be provided.
- this protrusion is 1 ⁇ 2 the depth of the recess.
- the substrate cooling apparatus according to this embodiment can be applied to a dry etching apparatus, an ion beam etching apparatus, and the like.
- FIG. 8 shows an example of an electronic device manufactured by applying the sputtering apparatus of the present invention.
- FIG. 8 shows a magnetic tunnel coupling (MTJ) element.
- the laminated film on these substrates can be produced by sputtering, and among these, the CoFe ferromagnetic layer sandwiching the tunnel barrier layer (mainly magnesium oxide) is sputtered while maintaining the substrate temperature at, for example, ⁇ 0 ° C. or lower.
- the film is formed by
- the tunnel barrier layer is formed by sputtering using a ceramic target containing magnesium oxide.
- FeCo is formed into an amorphous film by low-temperature film formation to obtain MgO organized in the (001) plane direction on amorphous FeCo.
- FeCo is formed using MgO as a template.
- a crystallized MTJ element having a high MR ratio can be obtained.
- FIG. 9 is a diagram showing a configuration for cooling a substrate according to a comparative example.
- a cooling gas introduction hole 603 having a diameter of 5 mm is provided at the center of the substrate holding table 600, and is connected to the cooling gas line 602 on the back side of the substrate holding table 600. There is no exhaust passage for positively discharging the cooling gas.
- the substrate holder 600 and the substrate W are sealed by a silicon rubber O-ring 606.
- the cooling gas has a structure in which gas pressure adjustment is performed by an automatic gas pressure controller (APC) 601.
- the pressing force by the substrate pressing ring 604 was 147N.
- the gas to be sealed was helium gas and 10 Torr (1330 Pa) was introduced.
- the gap between the surface 607 and W was 0.2 mm.
- the temperature of the substrate holder 600 was ⁇ 90 ° C., and a Si substrate with an oxide film having a diameter of 200 mm ⁇ thickness of 0.725 mm was used.
- the temperature of the substrate was measured by attaching a thermocouple (for example, K type) to a location (referred to as an edge portion) 80 mm away from the center of the substrate.
- a thermocouple for example, K type
- the substrate temperature in the equilibrium state was ⁇ 65 ° C. at the center of the substrate and ⁇ 80 ° C. at the edge of the substrate (Table 1).
- the reason for such a result is that the substrate is warped by the holding force for sealing the cooling gas (the shape in which the center moves away from the substrate holder) and the warp, and the substrate is warped by the pressure of the cooling gas. Conceivable.
- the substrate pressing force is increased to seal the cooling gas, the substrate warps, and even if the cooling gas pressure is increased, the substrate warps, generating a cooling temperature distribution in the substrate surface, and reducing the substrate pressing force to reduce the substrate. If the warpage is reduced, the reproducibility of the cooling temperature cannot be obtained due to leakage of the cooling gas.
- Example 1 Substrate cooling experiments were performed with a structure as shown in FIG.
- the substrate holding ring 111 is made of SUS, and the substrate holding table 112 is made of copper.
- the surface treatment of the surface 210 was not particularly performed, and the cutting surface was left as it was.
- the cooling gas introduction holes 113 are holes having a diameter of 1 mm, and are equally disposed at eight positions, shifted by 45 degrees from the center of the substrate holder 112.
- the cooling gas discharge holes 114 are also 1 mm in diameter, and are equally disposed at eight positions 45 degrees inside the cooling gas introduction holes 113 at positions away from the center of the substrate holder 112.
- the diameter of the surface 210 is 196 mm, the diameter of the surface 211 is 203 mm, and the distance between the surface 210 and the substrate W is 0.2 mm.
- a Stirling cycle type refrigerator is connected to the substrate holder 112, and the temperature of the substrate holder 112 is controlled to be ⁇ 90 ° C.
- the substrate pressing force was 19.6 N, and 100 sccm was flowed by the gas flow rate controller.
- the temperature of the substrate was measured by attaching a thermocouple (for example, K type) to a location (referred to as an edge portion) 80 mm away from the center of the substrate.
- the final temperature at the center of the substrate was ⁇ 78 ° C.
- the temperature at the edge of the substrate was ⁇ 80 ° C., thereby suppressing the temperature difference in the substrate surface.
- the difference between the substrates can also be suppressed within ⁇ 2 ° C., which shows the effect of the present invention (Table 1).
- Example 2 Next, a substrate cooling experiment was performed with the configuration shown in FIG. 3 to which the present invention can be applied.
- the substrate holding ring 111 is made of SUS, and the substrate holding table 112 is made of copper.
- the surface treatment of the surface 210 was not particularly performed, and the cutting surface was left as it was.
- the cooling gas introduction holes 113 are holes having a diameter of 1 mm and are equally arranged at 8 locations of 22.5 degrees apart from the center of the substrate holder 112.
- the diameter of the surface 210 is 196 mm, the diameter of the surface 211 is 203 mm, and the distance between the surface 210 and the substrate W is 0.2 mm.
- a Stirling cycle type refrigerator is connected to the substrate holder 112, and the temperature of the substrate holder 112 is controlled to be ⁇ 90 ° C.
- the substrate pressing force was 19.6 N, and 100 sccm was flowed by the gas flow rate controller.
- the temperature of the substrate was measured by attaching a thermocouple (for example, K type) to a location (referred to as an edge portion) 80 mm away from the center of the substrate.
- the final temperature at the center of the substrate was ⁇ 79 ° C. and the temperature at the edge of the substrate was ⁇ 77 ° C., thereby suppressing the temperature difference in the substrate surface.
- the difference between the substrates can also be suppressed within ⁇ 2 ° C., which shows the effect of the present invention (Table 1).
- the substrate holding ring 111 is made of SUS, and the substrate holding table base plate 709 and the substrate holding table sealing plate 710 are made of copper.
- the surface treatment on the side facing the substrate of the substrate holding base sealing plate 710 was not particularly performed, and the cutting surface was left as it was.
- the cooling gas introduction holes 708 were holes having a diameter of 1 mm, and were uniformly arranged at four positions of 90 degrees at positions away from the center of the substrate holding table 715.
- the cooling gas discharge holes 707 were also 1 mm in diameter, and were equally arranged at 90 degrees inside the cooling gas introduction holes at positions away from the center of the substrate holder 715.
- the distance between the substrate holding base sealing plate 710 and the substrate W is 0.2 mm.
- a GM cycle type refrigerator (not shown) is connected to the substrate holding table 715, and the temperature of the substrate holding table 112 is controlled to be ⁇ 200 ° C.
- the substrate pressing force was 19.6 N, and 50 sccm was flowed by the gas flow rate controller.
- the temperature of the substrate was measured by attaching a thermocouple (for example, K type) to a location (referred to as an edge portion) 80 mm away from the center of the substrate.
- the temperature difference in the substrate surface was suppressed such that the temperature at the center of the substrate was ⁇ 145 ° C. and the temperature at the edge of the substrate was ⁇ 149 ° C.
- the difference between the substrates can also be suppressed within ⁇ 2 ° C., which shows the effect of the present invention (Table 1).
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Abstract
Description
前記基板保持台との間に押し付け力を発生させて、前記基板を前記基板保持台に固定する保持部材と、
前記基板保持台に接続される冷凍機と、
前記基板保持台に設けられかつ前記凹部の凹面に開口する冷却ガス導入孔を有し、前記冷却ガス導入孔を介して前記凹部内の空間と冷却ガスの供給源とを接続する冷却ガス導入通路と、
前記冷却ガス導入孔と独立して前記基板保持台に設けられかつ前記凹部の凹面に開口する冷却ガス排出孔を有し、前記冷却ガス排出孔を介して前記凹部内の空間と排気装置とを接続する冷却ガス排出通路と、を備えることを特徴とする。
凹部及び前記凹部の周囲の凸部に形成される基板保持面を有すると共に、前記凹部の底面に前記冷却ガス導入通路または冷却ガス排出通路を構成する溝が形成された基台と、
前記基台の前記凹部の底面にはめ込まれ、前記基台の溝に通じる前記冷却ガス導入孔または冷却ガス排出孔を有する封止板と、を有することを特徴とする。
図10に、本実施形態のスパッタリング装置の動作例を示す。図1のスパッタリング装置に適用した場合を例に説明する。図1のスパッタリング装置は、MFC110-1などのプロセスガス導入系、基板保持リング111を基板保持位置及び保持解除位置に駆動する駆動装置(不図示)、直流電源107、高周波電源106などのスパッタ電源、冷凍機105、及び、排気ポンプに指令信号を送り、所定のシーケンスを実行させるコントローラconを備えて構成される。コントローラconは、制御プログラムを格納する記憶部81、プロセス制御の演算処理を行う演算処理部82を備える。演算処理部82は、例えば、パーソナルコンピュータ(PC)やマイクロコンピュータ等で構成できる。
更に図3を用いて本発明を適用できる別の基板保持台112の詳細を説明する。なお、図3の3aでは基板保持リング111と基板Wは非図示としている。基板保持台112には冷却ガス導入孔113が点在して設けられており冷却ガス導入ガイド201によってガス供給元が共通化されている。一方、基板保持台112には放射状に溝が設けられており、冷却ガス排出溝301を形成している。図3では、冷却ガス排出溝301は、面210~212を切り欠いて形成され、基板保持台112の側方に開口している(図3の3b)。冷却ガス排出溝301の深さは面210よりも深くてもよいし、同じ高さであってもよい。これにより、冷却ガスは、冷却ガス排出溝301を介して、基板保持台112の凹部よりも低圧に維持された真空容器101の内部に基板保持台112の側方から放出され、排気機構104によって排気される。
図8に、本発明のスパッタリング装置を適用して製造する電子デバイスの例を示す。図8は、磁気トンネル結合(MTJ)素子である。これら基板上の積層膜は、スパッタリング法により作製できるが、このうちトンネルバリア層(酸化マグネシウムを主成分とする)を挟むCoFe強磁性層を、基板温度を例えば-0℃以下に保ちながらスパッタリング法により成膜する。また、トンネルバリア層は、酸化マグネシウムを含むセラミックターゲットを用いてスパッタリングにより、成膜する。
本発明の効果を明確にするために、比較例を以下に示す。図9は比較例による基板を冷却する構成を示す図である。基板保持台600の中心には直径5mmの冷却ガス導入孔603が設けられており、基板保持台600の裏面側で冷却ガスライン602と接続されている。冷却ガスを積極的に排出するための排気通路は設けられていない。基板保持台600と基板Wはシリコンゴム製Oリング606によって密閉される。冷却ガスは自動ガス圧制御器(APC)601によってガス圧力調整が行われる構造となっている。基板押えリング604による押え力は147Nとした。また、密封させるガスはヘリウムガスで10Torr(1330Pa)導入した。面607とWとの隙間は0.2mmとした。
そこで、密封する冷却ガス圧力を1Torrとして、基板押え力を9.8Nと弱めたところ、基板の反りは減少したが、ガスの漏洩量が大きくなり、基板エッジ温度の時間変化が発生、更には基板間差が発生し、再現性が得られなくなってしまった(表1)。
本発明を適用できる図2のような構造で基板冷却実験を行った。基板保持リング111はSUS製、基板保持台112は銅製である。面210の表面処理は特に行っておらず、切削面のままとした。冷却ガス導入孔113は直径1mmの孔で基板保持台112の中心から離れた位置に45度ずつずらして8箇所均等配置させた。冷却ガス排出孔114も直径1mmで、基板保持台112の中心から離れた位置で、冷却ガス導入孔113よりも内側に45度ずつ8箇所均等配置させた。
次に、本発明を適用できる図3に示されるような構成にて基板冷却実験を行った。基板保持リング111はSUS製、基板保持台112は銅製である。面210の表面処理は特に行っておらず、切削面のままとした。冷却ガス導入孔113は直径1mmの孔で基板保持台112の中心から離れた位置に22.5度ずつ8箇所均等配置させた。
そして、本実施例を適用できるような図6の構成で基板冷却を確認した。基板保持リング111はSUS製、基板保持台ベース板709ならびに基板保持台封止板710は銅製である。基板保持台封止板710のうち基板に対向する側の表面処理は特に行っておらず、切削面のままとした。冷却ガス導入孔708は直径1mmの孔で基板保持台715の中心から離れた位置に90度ずつ4箇所均等配置させた。冷却ガス排出孔707も直径1mmで、基板保持台715の中心から離れた位置で、冷却ガス導入孔の内側に90度ずつ4箇所均等配置させた。
Claims (8)
- 基板を載置することが可能な載置部と当該載置部に載置される基板との間に空間を形成する凹部を有する基板保持台と、
前記基板保持台との間に押し付け力を発生させて、前記基板を前記基板保持台に固定する保持部材と、
前記基板保持台に接続される冷凍機と、
前記基板保持台に設けられかつ前記凹部の凹面に開口する冷却ガス導入孔を有し、前記冷却ガス導入孔を介して前記凹部内の空間と冷却ガスの供給源とを接続する冷却ガス導入通路と、
前記冷却ガス導入孔と独立して前記基板保持台に設けられかつ前記凹部の凹面に開口する冷却ガス排出孔を有し、前記冷却ガス排出孔を介して前記凹部内の空間と排気装置とを接続する冷却ガス排出通路と、
を備えることを特徴とする基板冷却装置。 - 前記冷却ガス導入孔と前記冷却ガス排出孔とは、前記凹部の底面に開口していることを特徴とする請求項1に記載の基板冷却装置。
- 前記保持部材は、前記基板保持台よりも熱伝導率の低い材料で形成されていることを特徴とする請求項1に記載の基板冷却装置。
- 前記基板保持台は、
凹部及び前記凹部の周囲の凸部に形成される基板保持面を有すると共に、前記凹部の底面に前記冷却ガス導入通路または冷却ガス排出通路を構成する溝が形成された基台と、
前記基台の前記凹部の底面にはめ込まれ、前記基台の溝に通じる前記冷却ガス導入孔または冷却ガス排出孔を有する封止板と、
を有することを特徴とする請求項1に記載の基板冷却装置。 - 前記冷却ガス排出孔を形成する壁部は、前記冷却ガス排出孔の孔径を小さくするためのコンダクタンス調整部材を内側に取り付け可能な取付構造を有することを特徴とする請求項1に記載の基板冷却装置。
- 真空容器と、
前記真空容器の内部に設けられ、基板を載置することが可能な載置部と当該載置部に載置される基板との間に空間を形成する凹部を有する基板保持台と、
前記基板保持台との間に押し付け力を発生させて、前記基板を前記基板保持台に固定する保持部材と、
前記基板保持台に接続される冷凍機と、
前記基板保持台に設けられかつ前記凹部の凹面に開口する冷却ガス導入孔を有し、前記冷却ガス導入孔を介して前記凹部内の空間と冷却ガスの供給源とを接続する冷却ガス導入通路と、
前記冷却ガス導入孔と独立して前記基板保持台に設けられかつ前記凹部の凹面に開口する冷却ガス排出孔を有し、前記冷却ガス排出孔を介して前記凹部内の空間と排気装置とを接続する冷却ガス排出通路と、
を備えることを特徴とするスパッタリング装置。 - 前記冷却ガス排出通路は、前記真空容器の内部を排気する前記排気装置と前記凹部内の空間を連通させることを特徴とする請求項6に記載のスパッタリング装置。
- 請求項6に記載されたスパッタリング装置により基板に成膜する工程を有することを特徴とする電子デバイスの製造方法。
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JP2016164287A (ja) * | 2015-03-06 | 2016-09-08 | 東京エレクトロン株式会社 | 成膜装置 |
JP2016184645A (ja) * | 2015-03-26 | 2016-10-20 | 住友大阪セメント株式会社 | 静電チャック装置 |
CN112189059A (zh) * | 2018-05-23 | 2021-01-05 | 住友金属矿山株式会社 | 气体释放辊及其制造方法以及使用气体释放辊的处理装置 |
CN112189059B (zh) * | 2018-05-23 | 2023-04-14 | 住友金属矿山株式会社 | 气体释放辊及其制造方法以及使用气体释放辊的处理装置 |
JP2020094285A (ja) * | 2020-03-05 | 2020-06-18 | キヤノントッキ株式会社 | 基板ホルダ及び成膜装置 |
JP7041702B2 (ja) | 2020-03-05 | 2022-03-24 | キヤノントッキ株式会社 | 基板ホルダ、基板処理装置及び成膜装置 |
CN113915810A (zh) * | 2021-09-09 | 2022-01-11 | 徐州铭德轴承有限公司 | 一种制备平面轴承用冷却装置 |
WO2024116412A1 (ja) * | 2022-12-02 | 2024-06-06 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP7503708B1 (ja) | 2022-12-02 | 2024-06-20 | 日本碍子株式会社 | 半導体製造装置用部材 |
Also Published As
Publication number | Publication date |
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US20120193216A1 (en) | 2012-08-02 |
GB201206394D0 (en) | 2012-05-23 |
GB2486156A (en) | 2012-06-06 |
JP5462272B2 (ja) | 2014-04-02 |
JPWO2011043063A1 (ja) | 2013-03-04 |
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