JP2018510383A - 液晶素子 - Google Patents
液晶素子 Download PDFInfo
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Abstract
Description
<先行技術文献>
<特許文献>
C=1/ρ
R=1/CR
R=ρ×D/A
Rin=d(nx−ny)
Rth=d(nz−ny)
V1<V2.
20≦H1/H2
5≦T1/T2
102:液晶層
201、202:配光膜
301、302:電極層
実施例および比較例で製造された液晶素子に対し、LCR Meter(E4980A、Agilent社)を利用して、測定周波数が60Hzであり、測定電圧の大きさが0.5Vである条件で、常温で伝導度を測定した。平行伝導度は垂直配向された液晶層に対して垂直電圧、すなわち厚さ方向に電圧を印加して測定し、必要な場合に垂直伝導度は水平配向された液晶層に対して同様に前記垂直電圧を印加して測定した。各液晶素子の液晶層を面積が9cm2(横:3cm、縦:3cm)であり、厚さが15μmとなるように製作して測定した。
実施例および比較例で製造された液晶素子に対してヘイズメータ、NDH−5000SPを利用して、ASTM D1003規格に沿ってヘイズおよび透過率を測定した。すなわち、光を測定対象を透過させて積分球内に入射させ、この過程で光は測定対象によって拡散光(DT、拡散されて出光されたすべての光の合計を意味)と直進光(PT、拡散光を排除した正面方向の出光を意味)に分離されるが、この光は積分球内で受光素子に集光され、集光される光を通じて前記ヘイズの測定が可能である。すなわち、前記過程による全体透過光(TT)は前記拡散光(DT)と直進光(PT)の総合(DT+PT)であり、ヘイズは前記全体透過光に対する拡散光の百分率(Haze(%)=100XDT/TT)で規定され得る。また、下記の試験例で全体透過率は前記全体透過光(TT)を意味し、直進透過率は前記直進光(PT)を意味する。
ITO(Indium Tin Oxide)透明電極層と垂直配光膜が順次形成されている2つのPC(polycarbonate)フィルムを前記垂直配光膜が互いに対向し、間隙(cell gap)が約15μm程度となるように離隔配置させた後で前記離隔配置された2枚のPCフィルムの間に液晶組成物を注入し、エッジ(edge)をシーリングして面積9cm2および間隙(cell gap)15μmの液晶素子を製作した。前記液晶組成物は、液晶化合物として屈折率異方性が0.15で、誘電率異方性が−5.0人液晶化合物(メーカー:HCCH、商品名:HNG730600−200)、異方性染料(メーカー:BASF、商品名:X12)および伝導度調節のための添加剤(メーカー:HCCH、商品名:HCM−009)を89.9:0.1:10の重量比率(HNG730600−200:X12:HCM−009)で含むものを使った。前記の通りに製造された液晶層の平行伝導度の実測値は約3.1×10−6であり、これを前記数式1〜3を使って面積が1cm2で、厚さが1cmである液晶層が表わす数値に換算した結果は5.2×10−4μS/cmであった。
製造例1で製造された液晶素子に対して駆動周波数を60Hzで固定して、電圧の大きさを変更しながら全体透過率とヘイズを評価して、その結果を図4および5に整理した。図4は全体透過率に対する結果で、図5はヘイズに対する結果である。図面から分かるように、製造例1の液晶素子の場合、約60Hzで10V以下まで第1および第2状態の具現が可能で、60Vの印加電圧水準でEHDI駆動による透過率とヘイズが飽和されることを確認することができる。
液晶組成物として、液晶化合物として屈折率異方性が0.15で、誘電率異方性が−5.0人液晶化合物(メーカー:HCCH、商品名:HNG730600−200)、異方性染料(メーカー:BASF、商品名:X12)、伝導度調節のための第1添加剤(メーカー:HCCH、商品名:HCM−009)および伝導度調節のための第2添加剤(メーカー:Aldrich、商品名:CTAB)を89.9:0.1:9.5:0.5の重量比率(HNG730600−200:X12:HCM−099:CTAB)で含むものを使ったことを除いては製造例1と同一に液晶素子を製造した。前記の通りに製造された液晶層の平行伝導度の実測値は約1.0×10−5Sであり、これを前記数式1〜3を使って面積が1cm2で、厚さが1cmである液晶層が表わす数値に換算した結果は1.7×10−3μS/cmであった。
製造例1で製造された液晶素子に対して駆動周波数および電圧の大きさを変更しながら全体透過率とヘイズを評価して、その結果を図6〜11に整理した。図6〜8は順次的にそれぞれ駆動周波数を30Hz、60Hzまたは100Hzの固定状態で、印加電圧の大きさを変更して測定した全体透過率であり、図9〜11は順次的にそれぞれ駆動周波数を30Hz、60Hzまたは100Hzの固定状態で、印加電圧の大きさを変更して測定したヘイズである。図面から分かるように、製造例2の液晶素子の場合、約100Hz条件で印加電圧により第1〜第3状態が具現された。
Claims (20)
- 平行伝導度が1.0×10−4μS/cm以上の液晶層を含み、
下記第1〜第3状態の間でスイッチングされ、
前記第1〜第3状態でのスイッチングが同一周波数で電圧の大きさの変更によって実行されるように設計された、
トリプル相液晶素子
(前記平行伝導度は、前記液晶層の光軸と電場の方向が水平であるように電圧を印加した状態で前記電場の方向に沿って測定した値であり、
前記において、
測定周波数は60Hzであり、
測定電圧は0.5Vであり、
前記平行伝導度は、
面積が1cm2で、
厚さが1cmである液晶層への換算数値である。):
第1状態:直進光透過率が50%以上、ヘイズが5%以下である状態;
第2状態:直進光透過率が35%以下、ヘイズが5%以下である状態;
第3状態:直進光透過率が10%以下、ヘイズが80%以上である状態。 - 液晶層の平行伝導度が5.0×10−2μS/cm以下である、
請求項1に記載のトリプル相液晶素子。 - 液晶層の平行伝導度が3.0×10−2μS/cm以下である、
請求項1に記載のトリプル相液晶素子。 - 液晶層の垂直伝導度(VC)および液晶層の平行伝導度(PC)の比率(PC/VC)が0.2以上である、
請求項1から3のいずれか1項に記載のトリプル相液晶素子。 - 液晶層の平行伝導度(PC)および液晶層の垂直液晶層の伝導度(VC)の比率(VC/PC)が2.0以下である、
請求項1から4のいずれか1項に記載のトリプル相液晶素子。 - 第1状態で直進光透過率が55%以上で、ヘイズが3%以下であり、
第2状態で直進光透過率が30%以下で、ヘイズが3%以下であり、
第3状態で直進光透過率が5%以下で、ヘイズが90%以上である、
請求項1から5のいずれか1項に記載のトリプル相液晶素子。 - 下記の数式Aを満足する、
請求項1から6のいずれか1項に記載のトリプル相液晶素子:
[数式A]
20≦H1/H2
数式Aで
H1は60Hzの周波数および60Vの電圧が印加された状態での前記トリプル相液晶素子のヘイズで、
H2は電圧未印加状態または60Hzの周波数および10Vの電圧が印加された状態での前記トリプル相液晶素子のヘイズである。 - 下記の数式Bを満足する、
請求項1から6のいずれか1項に記載のトリプル相液晶素子:
[数式B]
5≦T1/T2
数式Bで
T1は電圧未印加状態または60Hzの周波数および10Vの電圧が印加された状態での前記トリプル相液晶素子の直進光透過率で、
T2は60Hzの周波数および60Vの電圧が印加された状態での前記トリプル相液晶素子のヘイズである。 - 液晶層は非反応性液晶化合物および反応性メソゲンを含む、
請求項1から8のいずれか1項に記載のトリプル相液晶素子。 - 液晶層は非反応性液晶化合物100重量部対比1〜30重量部の反応性液晶化合物を含む、
請求項1から9のいずれか1項に記載のトリプル相液晶素子。 - 液晶層はイオン性化合物を2重量%以下の比率でさらに含む、
請求項1から10のいずれか1項に記載のトリプル相液晶素子。 - 第1状態で液晶層は垂直配向状態である、
請求項1から11のいずれか1項に記載のトリプル相液晶素子。 - 第2状態で液晶層は水平配向、垂直配向、ツイスト配向またはハイブリッド配向状態である、
請求項1から12のいずれか1項に記載のトリプル相液晶素子。 - 第3状態で液晶層は電気水力学的不安定状態である、
請求項1から13のいずれか1項に記載のトリプル相液晶素子。 - 液晶層を含むトリプル相液晶素子の製造方法であって、
前記液晶層の平行伝導度を1.0×10−4μS/cm以上に調節し、
前記トリプル相液晶素子が下記第1〜第3状態の間でスイッチングされ得、
前記スイッチングが同一周波数で電圧の大きさの変化により実行されるようにする段階を含む、
トリプル相液晶素子の製造方法
(前記平行伝導度は、
前記液晶層の光軸と電場の方向が水平であるように電圧を印加した状態で前記電場の方向に沿って測定した値であり、
前記において、
測定周波数は60Hzであり、
測定電圧は0.5Vであり、
前記平行伝導度は、
面積が1cm2で、
厚さが1cmである液晶層への換算数値である。):
第1状態:直進光透過率が50%以上、ヘイズが5%以下である状態;
第2状態:直進光透過率が20%以上、ヘイズが5%以下である状態;
第3状態:直進光透過率が10%以下、ヘイズが80%以上である状態。 - 第1または第2状態の具現のための印加電圧(V1)と第3状態の具現のための印加電圧(V2)が下記の条件1を満足するように液晶層を形成する、
請求項15に記載のトリプル相液晶素子の製造方法:
[条件1]
V1<V2. - 平行伝導度が1.0×10−4μS/cm以上の液晶層を含むトリプル相液晶素子の駆動方法であって、
同一周波数で印加電圧の大きさを調節して前記トリプル相液晶素子が下記第1〜第3状態のうちいずれか一つの状態を具現するようにする段階を含む、
液晶素子の駆動方法
(前記平行伝導度は、
前記液晶層の光軸と電場の方向が水平であるように電圧を印加した状態で前記電場の方向に沿って測定した値であり、
前記において、
測定周波数は60Hzであり、
測定電圧は0.5Vであり、
前記平行伝導度は、
面積が1cm2で、
厚さが1cmである液晶層への換算数値である。):
第1状態:直進光透過率が50%以上、ヘイズが5%以下である状態;
第2状態:直進光透過率が20%以上、ヘイズが5%以下である状態;
第3状態:直進光透過率が10%以下、ヘイズが80%以上である状態。 - 第1〜第3状態のうちいずれか一つの状態から第1〜第3状態中の他の状態にスイッチングされるように印加電圧の大きさを制御する段階をさらに含む、
請求項17に記載のトリプル相液晶素子の駆動方法。 - 第1または第2状態の具現のための印加電圧(V1)と第3状態の具現のための印加電圧(V2)が下記の条件1を満足するように印加電圧の大きさを制御する、
請求項17または18に記載のトリプル相液晶素子の駆動方法。
[条件1]
V1<V2. - 請求項1から14のいずれか1項に記載されたトリプル相液晶素子を含む、
光変調装置。
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