JP2018508988A - 半導体ボディの製造方法 - Google Patents
半導体ボディの製造方法 Download PDFInfo
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- JP2018508988A JP2018508988A JP2017539296A JP2017539296A JP2018508988A JP 2018508988 A JP2018508988 A JP 2018508988A JP 2017539296 A JP2017539296 A JP 2017539296A JP 2017539296 A JP2017539296 A JP 2017539296A JP 2018508988 A JP2018508988 A JP 2018508988A
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Abstract
Description
本特許出願は、独国特許出願第102015102374.1号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (20)
- 接触層(7)が設けられた少なくとも1つの凹部(10)を備えている半導体ボディ(1)を製造する方法であって、
A)前記半導体ボディ(1)を形成するステップと、
B)前記半導体ボディ(1)に第1のマスク層(5)および第2のマスク層(6)を形成するステップであって、前記第2のマスク層(6)が、パターニングされずに前記半導体ボディ(1)に形成され、前記第1のマスク層(5)が、少なくとも1つの第1のマスク開口部(50)を有するようにパターニングされた状態で前記第2のマスク層(6)に形成される、ステップと、
C)前記第1のマスク層(5)の前記少なくとも1つの第1のマスク開口部(50)の領域において、前記第2のマスク層(6)における少なくとも1つの第2のマスク開口部(60)と、前記半導体ボディ(1)における少なくとも1つの凹部(10)とを形成するステップであって、前記凹部(10)が側面(11)および底面(12)を備えており、前記凹部(10)が、前記第1のマスク開口部(50)から見たとき、前記第2のマスク開口部(60)と一緒にアンダーカット部(13)を形成する、ステップと、
D)前記第1のマスク層(5)と、前記少なくとも1つの凹部(10)の前記底面(12)とに、方向性堆積法を使用して接触層(7)を形成するステップと、
E)前記少なくとも1つの凹部(10)の前記側面(11)にパッシベーション層(8)を形成するステップと、
を含む、方法。 - 前記接触層(7)が蒸着される、
請求項1に記載の方法。 - 前記接触層(7)が、金属および/または透明導電性酸化物を含む、
請求項1または請求項2のいずれかに記載の方法。 - 方法ステップEが、以下の方法ステップ、すなわち、
E1)前記第2のマスク層(6)と、前記少なくとも1つの凹部(10)の前記側面(11)および前記底面(12)と、前記接触層(7)とに、前記パッシベーション層(8)を、パターニングせずに形成するステップと、
E2)前記半導体ボディ(1)とは反対側の、前記第2のマスク層(6)の面からと、前記少なくとも1つの凹部(10)の前記底面(12)からと、前記接触層(7)から、前記パッシベーション層(8)を除去するステップであって、前記パッシベーション層(8)が前記少なくとも1つの凹部(10)の前記側面(11)の少なくとも一部に残る、ステップと、
を含む、
請求項1から請求項3のいずれかに記載の方法。 - 方法ステップE2において、前記パッシベーション層(8)が方向性エッチバック法(99)を使用して除去される、
請求項4に記載の方法。 - 前記方向性エッチバック法(99)が、乾式化学エッチング法である、
請求項5に記載の方法。 - 方法ステップEの後、前記パッシベーション層(8)が、前記少なくとも1つの凹部(10)の前記底面(12)の領域において前記接触層(7)と隣接する、
請求項1から請求項6のいずれかに記載の方法。 - 方法ステップEの前に、前記第1のマスク層(5)が、自身に形成されている前記接触層(7)と一緒に除去される、
請求項1から請求項7のいずれかに記載の方法。 - 方法ステップEの後、前記第2のマスク層(6)が、前記半導体ボディ(1)上に残り、前記パッシベーション層(8)と一緒に連続的な絶縁層を形成する、
請求項1から請求項8のいずれかに記載の方法。 - 方法ステップCにおいて、前記少なくとも1つの第2のマスク開口部(60)および前記少なくとも1つの凹部(10)が、ジョイントエッチング法によって形成される、
請求項1から請求項9のいずれかに記載の方法。 - 前記ジョイントエッチング法が、湿式化学エッチング法である、
請求項10に記載の方法。 - 方法ステップCにおいて、前記少なくとも1つの第2のマスク開口部(60)が第1のエッチング法によって形成され、前記少なくとも1つの凹部(10)が、少なくとも1種類の第2のエッチング法によって形成される、
請求項1から請求項9のいずれかに記載の方法。 - 前記第1のエッチング法が乾式化学エッチング法であり、前記第2のエッチング法が湿式化学エッチング法である、
請求項12に記載の方法。 - 前記半導体ボディ(1)が、互いに重なるように配置されている半導体層(2,3,4)を有する半導体積層体として設けられ、前記第1のマスク層(5)が前記半導体積層体の主面に形成される、
請求項1から請求項13のいずれかに記載の方法。 - 前記第2のマスク層および前記パッシベーション層が同じ材料を含む、
請求項1から請求項14のいずれかに記載の方法。 - 方法ステップDと方法ステップEの間において、前記第2のマスク層(6)と、前記少なくとも1つの凹部(10)の前記側面(11)および前記底面(12)と、前記接触層(7)とに、エッチング停止層(9)が大きな面積にわたり形成される、
請求項1から請求項15のいずれかに記載の方法。 - 前記エッチング停止層(9)および前記パッシベーション層(8)が、前記半導体ボディ(1)とは反対側の、前記第2のマスク層(6)の面からと、前記少なくとも1つの凹部(10)の前記底面(12)からと、前記接触層(7)から、除去され、前記エッチング停止層(9)および前記パッシベーション層(8)が、前記少なくとも1つの凹部(10)の前記側面(11)の少なくとも一部に残る、
請求項16に記載の方法。 - 前記エッチング停止層(9)が酸化アルミニウムを含む、
請求項16または請求項17に記載の方法。 - 前記第2のマスク層(6)および/または前記パッシベーション層(8)が、二酸化珪素またはシリコン酸窒化物を含む、
請求項1から請求項18のいずれかに記載の方法。 - 前記第1のマスク層(5)がレジストマスクを備えている、および/または、前記第2のマスク層(6)が酸化物系または酸窒化物系のハードマスクである、
請求項1から請求項19のいずれかに記載の方法。
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DE102019131502A1 (de) * | 2019-08-29 | 2021-03-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung strahlungsemittierender halbleiterchips, strahlungsemittierender halbleiterchip und strahlungsemittierendes bauelement |
DE102021130159A1 (de) * | 2021-11-18 | 2023-05-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
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CN107251238A (zh) | 2017-10-13 |
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US20180040512A1 (en) | 2018-02-08 |
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