JP6476305B2 - 半導体ボディの製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 231
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 159
- 238000002161 passivation Methods 0.000 claims description 92
- 238000005530 etching Methods 0.000 claims description 65
- 239000000463 material Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000003631 wet chemical etching Methods 0.000 claims description 8
- 238000003486 chemical etching Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 320
- 238000010586 diagram Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004886 process control Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
本特許出願は、独国特許出願第102015102378.4号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (14)
- パッシベーション層(8)が設けられた少なくとも1つの凹部(10)を備えている半導体ボディ(1)を製造する方法であって、
A)前記半導体ボディ(1)を形成するステップと、
B)前記半導体ボディ(1)に第1のマスク層(5)および第2のマスク層(6)を形成するステップであって、前記第2のマスク層(6)が、パターニングされずに前記半導体ボディ(1)に形成され、前記第1のマスク層(5)が、少なくとも1つの第1のマスク開口部(50)を有するようにパターニングされた状態で前記第2のマスク層(6)に形成される、ステップと、
C)前記第1のマスク層(5)の前記少なくとも1つの第1のマスク開口部(50)の領域において、前記第2のマスク層(6)における少なくとも1つの第2のマスク開口部(60)と、前記半導体ボディ(1)における少なくとも1つの凹部(10)とを形成するステップであって、前記凹部(10)が側面(11)および底面(12)を備えており、前記凹部(10)が、前記第1のマスク開口部(50)から見たとき、前記第2のマスク開口部(60)と一緒にアンダーカット部(13)を形成する、ステップと、
D)前記第2のマスク層(6)と、前記少なくとも1つの凹部(10)の前記側面(11)および前記底面(12)とに、パッシベーション層(8)を、パターニングせずに形成するステップと、
E)前記半導体ボディ(1)とは反対側の、前記第2のマスク層(6)の面からと、前記少なくとも1つの凹部(10)の前記底面(12)から、前記パッシベーション層(8)を除去するステップであって、前記パッシベーション層(8)が前記少なくとも1つの凹部(10)の前記側面(11)の少なくとも一部に残る、ステップと、
を含む方法であって、
方法ステップCと方法ステップDとの間において、前記第2のマスク層(6)と、前記少なくとも1つの凹部(10)の前記側面(11)および前記底面(12)とに、エッチング停止層(9)が大きな面積にわたり形成され;方法ステップEにおいて、前記半導体ボディ(1)とは反対側の前記第2のマスク層(6)の面からと、前記少なくとも1つの凹部(10)の前記底面(12)から、前記エッチング停止層(9)および前記パッシベーション層(8)が除去され、前記少なくとも1つの凹部(10)の前記側面(11)の少なくとも一部に、前記エッチング停止層(9)および前記パッシベーション層(8)が残る、
方法。 - 方法ステップEの後、前記第2のマスク層(6)が、前記半導体ボディ(1)上に残り、前記パッシベーション層(8)と一緒に連続的な絶縁層を形成する、
請求項1に記載の方法。 - 方法ステップDの前に、前記第1のマスク層(5)が除去される、
請求項1または請求項2のいずれかに記載の方法。 - 方法ステップCにおいて、前記少なくとも1つの第2のマスク開口部(60)および前記少なくとも1つの凹部(10)が、ジョイントエッチング法によって形成される、
請求項1から請求項3のいずれかに記載の方法。 - 前記ジョイントエッチング法が、湿式化学エッチング法である、
請求項4に記載の方法。 - 方法ステップCにおいて、前記少なくとも1つの第2のマスク開口部(60)が第1のエッチング法によって形成され、前記少なくとも1つの凹部(10)が、少なくとも1種類の第2のエッチング法によって形成される、
請求項1から請求項3のいずれかに記載の方法。 - 前記第1のエッチング法が乾式化学エッチング法であり、前記第2のエッチング法が湿式化学エッチング法である、
請求項6に記載の方法。 - 前記半導体ボディ(1)が、互いに重なるように配置されている半導体層(2,3,4)を有する半導体積層体として設けられ、前記第1のマスク層(5)が前記半導体積層体の主面に形成される、
請求項1から請求項7のいずれかに記載の方法。 - 方法ステップEにおいて、前記パッシベーション層(8)が方向性エッチバック法(99)によって除去される、
請求項1から請求項8のいずれかに記載の方法。 - 前記方向性エッチバック法(99)が、乾式化学エッチング法である、
請求項9に記載の方法。 - 前記第2のマスク層(6)および前記パッシベーション層(8)が同じ材料を含む、
請求項1から請求項10のいずれかに記載の方法。 - 前記第2のマスク層(6)および/または前記パッシベーション層(8)が、二酸化珪素またはシリコン酸窒化物を含む、
請求項1から請求項11のいずれかに記載の方法。 - 前記第1のマスク層(5)がレジストマスクである、
請求項1から請求項12のいずれかに記載の方法。 - 前記パッシベーション層(8)を除去するためにフッ素含有ガスが使用される、
請求項1から請求項13のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102015102378.4A DE102015102378B4 (de) | 2015-02-19 | 2015-02-19 | Verfahren zur Herstellung eines Halbleiterkörpers |
DE102015102378.4 | 2015-02-19 | ||
PCT/EP2016/052809 WO2016131689A1 (de) | 2015-02-19 | 2016-02-10 | Verfahren zur herstellung eines halbleiterkörpers |
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JP2018508120A JP2018508120A (ja) | 2018-03-22 |
JP6476305B2 true JP6476305B2 (ja) | 2019-02-27 |
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US (1) | US10468555B2 (ja) |
JP (1) | JP6476305B2 (ja) |
CN (1) | CN107408531B (ja) |
DE (1) | DE102015102378B4 (ja) |
WO (1) | WO2016131689A1 (ja) |
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DE102018003982A1 (de) * | 2018-05-17 | 2019-11-21 | 3-5 Power Electronics GmbH | Halbleiterbauelementherstellungsverfahren und Halbleiterbauelement |
EP4391093A1 (en) * | 2021-09-14 | 2024-06-26 | LG Electronics Inc. | Semiconductor light emitting element and display device |
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TW201405864A (zh) | 2012-07-30 | 2014-02-01 | Lextar Electronics Corp | 具有底切結構之發光二極體及其製造方法 |
DE102012107921A1 (de) * | 2012-08-28 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
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