JP6577659B2 - オプトエレクトロニクス部品の製造方法 - Google Patents
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- H01L33/40—Materials therefor
Description
1a p型半導体領域
1b n型半導体領域
2 マスク構造体
3 メタライゼーション層
4a 第1の不動態化材料
4b 第2の不動態化材料
4c 第3の不動態化材料
5 n接触材料
6a 第1の成長材料
6b 第2の成長材料
7 コンタクト構造
8 ポッティング
9 コンタクトメタライゼーション層
10 オプトエレクトロニクス部品
11 変換材料
12 保護層
22a 第2のマスク構造体の面
22b 第2のマスク構造体の面
222 第3のマスク構造体
222a 第3のマスク構造体の面
A 凹部
A1 凹部の側面
A2 凹部
A3 凹部
B 半導体ボディの領域
T キャリア
Claims (11)
- オプトエレクトロニクス部品(10)を製造する方法であって、
A) p型半導体領域(1a)およびn型半導体領域(1b)を備えた半導体ボディ(1)を設けるステップと、
B) 前記半導体ボディ(1)とは反対側の面において形状の幅が前記半導体ボディ(1)側の面より広い第1のマスク構造体(2)を使用して前記p型半導体領域(1a)の上にメタライゼーション層(3)を方向性堆積させ、次いで、前記メタライゼーション層(3)の上に第1の不動態化材料(4a)を無方向性堆積させる、ステップと、
C) 前記第1のマスク構造体(2)を剥離し、凹部(A)が前記n型半導体領域(1b)内に達するように前記半導体ボディ(1)に前記凹部(A)を導入するステップと、
D) 第2の不動態化材料(4b)が前記第1の不動態化材料(4a)の側面も覆うように、前記凹部(A)全体に前記第2の不動態化材料(4b)を堆積させた後、前記第1の不動態化材料(4a)の側面および前記凹部(A)の側面に、前記第2の不動態化材料(4b)が残るように、前記第2の不動態化材料(4b)を前記凹部(A)の底部から除去するステップと、
E) 前記半導体ボディ(1)とは反対側の面(22a)において形状の幅が前記半導体ボディ(1)側の面(22b)より広く、且つ、前記第1の不動態化材料(4a)の上に位置する第2のマスク構造体を使用して、前記凹部(A)の中と、前記第1の不動態化材料(4a)の上とに、n接触材料(5)を平坦に方向性堆積させ、次いで、前記n接触材料(5)の上に第3の不動態化材料(4c)を平坦に無方向性堆積させる、ステップと、
F) 前記第2のマスク構造体を剥離するステップと、
F1) 前記第1の不動態化材料(4a)の上と、前記第3の不動態化材料(4c)の上に、第1の成長材料(6a)を平坦に堆積させるステップと、
F2) 前記半導体ボディ(1)とは反対側の面(222a)において形状の幅が前記半導体ボディ(1)側の面より広い第3のマスク構造体(222)を使用して前記第1の成長材料(6a)を方向性腐食させ、次いで、前記第3の不動態化材料(4c)と、前記第1の成長材料(6a)が前記第3のマスク構造体(222)によって覆われていない領域(B)において前記第3の不動態化材料(4c)によって覆われていない前記第1の不動態化材料(4a)とを腐食させるステップと、
G) 前記半導体ボディ(1)の上にコンタクト構造(7)を堆積させ、各コンタクト構造(7)が前記n接触材料(5)または前記メタライゼーション層(3)のみに結合され、かつ、前記第3のマスク構造体(222)の間で堆積されるように前記コンタクト構造(7)を前記n接触材料(5)および前記メタライゼーション層(3)に電気的に結合するステップと、
G1) 前記第3のマスク構造体(222)および前記第1の成長材料(6a)を剥離するステップと、
H) ポッティング(8)によって前記コンタクト構造(7)を封止し、前記半導体ボディ(1)を覆うステップと、
を含む、方法。 - 方法ステップF2)の後、方法ステップG)の前に、前記第3のマスク構造体(222)の間で第2の成長材料(6b)が無方向性の方法において平坦に堆積される、
請求項1に記載の方法。 - 前記第3のマスク構造体(222)の間で前記第2の成長材料(6b)の上に前記コンタクト構造(7)が電気めっきによって形成される、
請求項2に記載の方法。 - 前記コンタクト構造(7)および前記半導体ボディ(1)の上に前記ポッティング(8)が堆積され、次いで、前記コンタクト構造(7)が前記半導体ボディ(1)とは反対側の面において露出され、前記コンタクト構造(7)それぞれの前記露出面の上にコンタクトメタライゼーション層(9)が堆積される、
請求項1から請求項3のいずれか1項に記載の方法。 - 前記コンタクトメタライゼーション層(9)が、その形状において互いに異なる、
請求項4に記載の方法。 - 前記凹部(A)が第1のタイプ(A2)および第2のタイプ(A3)を有し、前記第2のタイプ(A3)が分離溝として形成される、
請求項1から請求項5のいずれか1項に記載の方法。 - 凹部の前記第2のタイプ(A3)において、前記p型半導体領域(1a)および前記n型半導体領域(1b)が完全に除去される、
請求項6に記載の方法。 - 前記半導体ボディ(1)が、ウェハ複合体において成長基板の上に設けられる、
請求項1から請求項7のいずれか1項に記載の方法。 - 方法ステップH)の後、前記半導体ボディ(1)から前記成長基板が剥離される、
請求項8に記載の方法。 - 前記コンタクト構造(7)とは反対側の前記半導体ボディ(1)の面に、変換材料(11)が堆積される、
請求項1から請求項9のいずれか1項に記載の方法。 - 方法ステップB)の前に、前記半導体ボディ(1)の前記p型半導体領域(1a)の上における前記第1のマスク構造体(2)に対応する部分に保護層(12)が堆積される、
請求項1から請求項10のいずれか1項に記載の方法。
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DE102015114590.1 | 2015-09-01 | ||
DE102015114590.1A DE102015114590B4 (de) | 2015-09-01 | 2015-09-01 | Verfahren zur Herstellung eines optoelektronischen Bauteils |
PCT/EP2016/070525 WO2017037121A1 (de) | 2015-09-01 | 2016-08-31 | Verfahren zur herstellung eines optoelektronischen bauteils |
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DE (1) | DE102015114590B4 (ja) |
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US9577151B2 (en) * | 2013-04-23 | 2017-02-21 | Koninklijke Philips N.V. | Side interconnect for light emitting device |
JP6252123B2 (ja) | 2013-11-14 | 2017-12-27 | 日亜化学工業株式会社 | 発光素子の製造方法 |
KR102309670B1 (ko) * | 2014-12-24 | 2021-10-07 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자, 발광소자 패키지 및 조명시스템 |
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