JP2018206804A - 静電チャック及びプラズマ処理装置 - Google Patents
静電チャック及びプラズマ処理装置 Download PDFInfo
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
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- H01L21/6833—Details of electrostatic chucks
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract
【解決手段】一実施形態の静電チャックは、基台、誘電体層、及び、チャック本体を備える。誘電体層は、基台上に設けられており、且つ、基台に固定されている。チャック本体は、誘電体層上に搭載される。チャック本体は、セラミック本体、第1電極、第2電極、及び、第3電極を有する。セラミック本体は、基板搭載領域を有する。第1電極は、基板搭載領域内に設けられている。第2電極及び第3電極は、双極電極を構成する。第2電極及び第3電極は、セラミック本体内に設けられており、第1電極と誘電体層との間に設けられている。
【選択図】図2
Description
Claims (15)
- その内部に熱交換媒体用の流路が設けられた基台と、
前記基台上に設けられ且つ該基台に固定された誘電体層と、
前記誘電体層上に搭載されたチャック本体であり、その上に載置される基板を静電引力により保持する、該チャック本体と、
を備え、
前記チャック本体は、
基板搭載領域を有するセラミック本体と、
前記基板搭載領域上に搭載される基板と該チャック本体との間で静電引力を発生させるために、前記基板搭載領域内に設けられた第1電極と、
双極電極を構成する第2電極及び第3電極であり、該チャック本体と前記誘電体層との間で静電引力を発生させるために、前記セラミック本体内に設けられており、且つ、前記第1電極と前記誘電体層との間に設けられた、該第2電極及び該第3電極と、
を有する、
静電チャック。 - 前記セラミック本体は、前記基板搭載領域を囲み、その上にフォーカスリングが載置される外周領域を更に提供する、請求項1に記載の静電チャック。
- 前記チャック本体は、双極電極を構成する第4電極及び第5電極を更に有し、該第4電極及び該第5電極は、前記フォーカスリングと前記チャック本体との間で静電引力を発生させるために、前記外周領域内に設けられている、請求項2に記載の静電チャック。
- 前記第4電極及び前記第5電極は、前記第2電極及び前記第3電極よりも、前記誘電体層から離れている、請求項3に記載の静電チャック。
- 前記第2電極、前記第3電極、前記第4電極、及び、前記第5電極は、同一の平面に沿って設けられている、請求項3に記載の静電チャック。
- 前記第2電極及び前記第3電極は、前記基板搭載領域及び前記外周領域にわたって設けられている、請求項2に記載の静電チャック。
- 前記基台、前記誘電体層、及び、前記チャック本体には、前記誘電体層の側と反対側の前記外周領域の表面において開口する第1の流路が形成されている、請求項2〜6の何れか一項に記載の静電チャック。
- 前記誘電体層は、セラミックの溶射膜である、請求項1〜7の何れか一項に記載の静電チャック。
- 前記誘電体層は、前記基台に直接的に又は接着層を介して接合された樹脂層である、請求項1〜7の何れか一項に記載の静電チャック。
- 前記誘電体層の側の前記チャック本体の表面又は前記チャック本体の側の前記誘電体層の表面は、溝を提供しており、
前記基台及び前記誘電体層には、前記溝に接続される第2の流路が形成されている、
請求項1〜9の何れか一項に記載の静電チャック。 - 前記基台の温度を測定するための第1の温度センサと、
前記チャック本体の温度を測定するための第2の温度センサと、
を更に備える、請求項1〜10の何れか一項に記載の静電チャック。 - チャンバを提供するチャンバ本体と、
前記チャンバ内に設けられた、請求項1〜11の何れか一項に記載の静電チャックと、
前記静電チャックの前記基台に電気的に接続された高周波電源と、
前記第1電極に電気的に接続された第1の直流電源と、
前記第2電極に電気的に接続された第2の直流電源と、
前記第3電極に電気的に接続された第3の直流電源と、
を備える、プラズマ処理装置。 - 前記静電チャックは、請求項4又は5に記載の静電チャックであり、
該プラズマ処理装置は、
前記第4電極に電気的に接続された第4の直流電源と、
前記第5電極に電気的に接続された第5の直流電源と、
を更に備える、請求項12に記載のプラズマ処理装置。 - 前記静電チャックは、請求項7に記載の静電チャックであり、
前記第1の流路に選択的に接続される第1のガス供給部及び第1の排気装置を更に備える、請求項12に記載のプラズマ処理装置。 - 前記静電チャックは、請求項10に記載の静電チャックであり、
前記第2の流路に選択的に接続される第2のガス供給部及び第2の排気装置を更に備える、請求項12に記載のプラズマ処理装置。
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JP2017106728A JP6924618B2 (ja) | 2017-05-30 | 2017-05-30 | 静電チャック及びプラズマ処理装置 |
US15/987,110 US10825660B2 (en) | 2017-05-30 | 2018-05-23 | Electrostatic chuck and plasma processing apparatus |
KR1020180059007A KR102533889B1 (ko) | 2017-05-30 | 2018-05-24 | 정전 척 및 플라즈마 처리 장치 |
TW107118418A TWI840329B (zh) | 2017-05-30 | 2018-05-30 | 靜電夾頭及電漿處理裝置 |
US17/027,101 US11476095B2 (en) | 2017-05-30 | 2020-09-21 | Electrostatic chuck and plasma processing apparatus |
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JP2017106728A JP6924618B2 (ja) | 2017-05-30 | 2017-05-30 | 静電チャック及びプラズマ処理装置 |
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Cited By (8)
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JP2020107859A (ja) * | 2018-12-28 | 2020-07-09 | 東京エレクトロン株式会社 | 測定方法及び測定治具 |
JP2020178063A (ja) * | 2019-04-19 | 2020-10-29 | 東京エレクトロン株式会社 | 基板載置台 |
JP2021064750A (ja) * | 2019-10-17 | 2021-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
WO2022004211A1 (ja) * | 2020-06-29 | 2022-01-06 | 住友大阪セメント株式会社 | 静電チャック装置 |
WO2022259793A1 (ja) * | 2021-06-08 | 2022-12-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20230026252A (ko) | 2021-08-17 | 2023-02-24 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 배치대 |
KR20230141443A (ko) | 2022-03-31 | 2023-10-10 | 엔지케이 인슐레이터 엘티디 | 웨이퍼 배치대 |
JP7386086B2 (ja) | 2020-01-07 | 2023-11-24 | 日本特殊陶業株式会社 | 保持装置 |
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US20180374736A1 (en) * | 2017-06-22 | 2018-12-27 | Applied Materials, Inc. | Electrostatic carrier for die bonding applications |
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US11437261B2 (en) | 2018-12-11 | 2022-09-06 | Applied Materials, Inc. | Cryogenic electrostatic chuck |
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US11087989B1 (en) | 2020-06-18 | 2021-08-10 | Applied Materials, Inc. | Cryogenic atomic layer etch with noble gases |
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TWI802407B (zh) * | 2022-05-12 | 2023-05-11 | 宏貿科技有限公司 | 靜電卡盤 |
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JP6924618B2 (ja) | 2021-08-25 |
TW201901800A (zh) | 2019-01-01 |
KR20180131415A (ko) | 2018-12-10 |
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US20180350561A1 (en) | 2018-12-06 |
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