JP2018170505A - カチオン性粒子含有スラリー及びスピンオン炭素膜のcmpのためのその使用方法 - Google Patents
カチオン性粒子含有スラリー及びスピンオン炭素膜のcmpのためのその使用方法 Download PDFInfo
- Publication number
- JP2018170505A JP2018170505A JP2018051445A JP2018051445A JP2018170505A JP 2018170505 A JP2018170505 A JP 2018170505A JP 2018051445 A JP2018051445 A JP 2018051445A JP 2018051445 A JP2018051445 A JP 2018051445A JP 2018170505 A JP2018170505 A JP 2018170505A
- Authority
- JP
- Japan
- Prior art keywords
- organic polymer
- polymer film
- cmp polishing
- cmp
- silica particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 72
- 125000002091 cationic group Chemical group 0.000 title claims abstract description 17
- 239000002245 particle Substances 0.000 title description 25
- 239000002002 slurry Substances 0.000 title description 19
- 229910052799 carbon Inorganic materials 0.000 title description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title description 3
- 238000005498 polishing Methods 0.000 claims abstract description 109
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229920000620 organic polymer Polymers 0.000 claims abstract description 71
- 239000000203 mixture Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000007787 solid Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000004094 surface-active agent Substances 0.000 claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 7
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 5
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 14
- 239000006061 abrasive grain Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 229920000412 polyarylene Polymers 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000003082 abrasive agent Substances 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 150000002170 ethers Chemical class 0.000 claims description 4
- 229920003986 novolac Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 229920002577 polybenzoxazole Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004100 electronic packaging Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract description 25
- 239000000463 material Substances 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 42
- 235000012431 wafers Nutrition 0.000 description 34
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- -1 arylene ether Chemical compound 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 6
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000003750 conditioning effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003301 hydrolyzing effect Effects 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 2
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 150000004819 silanols Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- NHBRUUFBSBSTHM-UHFFFAOYSA-N n'-[2-(3-trimethoxysilylpropylamino)ethyl]ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCNCCN NHBRUUFBSBSTHM-UHFFFAOYSA-N 0.000 description 1
- UMXXGDJOCQSQBV-UHFFFAOYSA-N n-ethyl-n-(triethoxysilylmethyl)ethanamine Chemical compound CCO[Si](OCC)(OCC)CN(CC)CC UMXXGDJOCQSQBV-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007655 standard test method Methods 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000000733 zeta-potential measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
試験した基材は、その上に付着されたTEOS(二酸化ケイ素)層を有する、又は350℃/60秒でベークされたOPTL(商標)タイプ架橋ポリ(アリーレンエーテル)(Dow)の厚さ5000ÅのSOC層をスピンコートされた、直径200mmのベアシリコンウェーハであった。SOC膜を15秒間研磨した。1試行あたり、コーティング又は付着層の各種を有する一つのウェーハを試験した。結果を以下の表3に示す。
スラリーA/ラウリル硫酸アンモニウムスラリーのCMP研磨組成物。研磨した基材は、TEOS又はSiNをその上に付着された直径200mmベアシリコンウェーハ又は80%ノボラック/20%MMA SOC膜をスピンコートされ、240℃/60秒ベークされた直径200mmベアシリコンウェーハであった。SOC有機ポリマー膜を、スラリーAだけで60秒間研磨し、スラリーA/ラウリル硫酸アンモニウムで30秒間研磨した。1試行あたり一つのウェーハを試験した。
Claims (10)
- 半導体ウェーハ又は基材上に有機ポリマー液をスピンコートして形成する工程;
スピンコーティングを70〜375℃の範囲の温度で少なくとも部分的に硬化させて有機ポリマー膜を形成する工程;及び
研磨パッド及び水性CMP研磨組成物によって前記有機ポリマー膜をケミカルメカニカルポリッシング(CMP研磨)する工程
を含み、前記水性CMP研磨組成物が、全CMP研磨組成物固形分に基づいて0.05〜7重量%の、細長い、曲がった、又はこぶのあるシリカ粒子の砥粒であって、前記シリカ粒子の少なくとも一つの中に一つ以上のカチオン性窒素又はリン原子を含有する砥粒、全CMP研磨組成物固形分に基づいて0.005〜0.5重量%の、硫酸基を含有し、C8〜C18アルキルもしくはアルケニル基をさらに含有する界面活性剤、及びpH調節剤を含み、前記水性CMP研磨組成物が、1.5〜4.5の範囲のpHを有し、ここで、前記pHが、前記シリカ粒子の導電点(IEP)未満である、方法。 - 前記CMP研磨組成物が、全CMP組成物固形分に基づいて0.1〜4重量%の、シリカ粒子の少なくとも一つの中に一つ以上のカチオン性窒素又はリン原子を含有するシリカ粒子の砥粒を含む、請求項1記載の方法。
- 前記CMP研磨組成物が、シリカ粒子の少なくとも一つの中に一つ以上のカチオン性窒素原子を含有するシリカ粒子の砥粒を含む、請求項1記載の方法。
- 前記CMP研磨組成物が、シリカ粒子の少なくとも一つの中に一つ以上のカチオン性窒素又はリン原子を含有し、pH3.3で8〜50mVのゼータ電位(ZP)を有するシリカ粒子の砥粒を含む、請求項1記載の方法。
- 前記CMP研磨組成物が、全CMP組成物固形分に基づいて0.01〜0.1重量%の、硫酸基を含有し、C8〜C18アルキル又はアルケニル基をさらに含有する界面活性剤を含む、請求項1記載の方法。
- 前記有機ポリマー膜が、リソグラフィー用途に使用されるスピンオンコーティング(SOC)であり、方法がさらに、
(a)前記研磨された有機ポリマー膜をマスクに通して活性化放射線に露光する工程;及び
(b)前記有機ポリマー膜層を現像剤と接触させてリソグラフィーパターンを形成する工程
を含み、前記CMP研磨が(a)露光の前又は後のいずれかで実施される、請求項1記載の方法。 - 前記有機ポリマー膜が、ポリアリーレン類、ポリアリーレンエーテル類、架橋ポリアリーレン類、架橋ポリアリーレンエーテル類、ノボラック類、ポリイミド類、ポリベンゾキサゾール類又はフェノールエポキシ類から選択されるポリマーを含む、請求項1記載の方法。
- 前記半導体ウェーハ又は基材がさらに、無機酸化物;無機酸化物と導電層;無機酸化物と絶縁体;又は無機酸化物と絶縁体と導電層を含む、請求項1記載の方法。
- 前記有機ポリマー膜が、無機酸化物及び/又は導電層を含む電子パッケージング基材上にスピンコートされているスピンオン絶縁体(SOD)である、請求項1記載の方法。
- 前記有機ポリマー膜が、ポリイミド類、エポキシ類又はポリベンゾキサゾール類から選択され、さらに、前記有機ポリマー膜の硬化が、80〜180℃の温度で30秒〜20分間、部分的に硬化させたのち前記有機ポリマー膜をCMP研磨する工程、及びその後、前記基材をCMP研磨したのち前記有機ポリマー膜を完全に硬化させる工程を含む、請求項9記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/472,976 US10037889B1 (en) | 2017-03-29 | 2017-03-29 | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
US15/472,976 | 2017-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018170505A true JP2018170505A (ja) | 2018-11-01 |
JP7355487B2 JP7355487B2 (ja) | 2023-10-03 |
Family
ID=62948607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018051445A Active JP7355487B2 (ja) | 2017-03-29 | 2018-03-19 | カチオン性粒子含有スラリー及びスピンオン炭素膜のcmpのためのその使用方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10037889B1 (ja) |
JP (1) | JP7355487B2 (ja) |
KR (1) | KR102459039B1 (ja) |
CN (1) | CN108687649B (ja) |
TW (1) | TWI760462B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023171290A1 (ja) * | 2022-03-08 | 2023-09-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20200172761A1 (en) * | 2018-12-04 | 2020-06-04 | Cabot Microelectronics Corporation | Composition and method for silicon nitride cmp |
US10968366B2 (en) * | 2018-12-04 | 2021-04-06 | Cmc Materials, Inc. | Composition and method for metal CMP |
US11712777B2 (en) * | 2019-06-10 | 2023-08-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic fluoropolymer composite polishing pad |
CN111808533A (zh) * | 2020-07-19 | 2020-10-23 | 湖州飞鹿新能源科技有限公司 | 一种Topcon电池专用晶体硅抛光凝胶及其使用方法 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326395A (ja) * | 1992-05-21 | 1993-12-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2001077064A (ja) * | 1999-07-19 | 2001-03-23 | Internatl Business Mach Corp <Ibm> | ポリマ層の平坦化方法 |
JP2003115441A (ja) * | 2001-10-03 | 2003-04-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2004128475A (ja) * | 2002-08-02 | 2004-04-22 | Jsr Corp | 化学機械研磨用水系分散体および半導体装置の製造方法 |
JP2007088424A (ja) * | 2005-08-24 | 2007-04-05 | Jsr Corp | 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 |
JP2009146998A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 半導体装置の製造方法 |
JP2010028086A (ja) * | 2008-06-16 | 2010-02-04 | Hitachi Chem Co Ltd | Cmp研磨剤、このcmp研磨剤を用いた研磨方法 |
JP2010056199A (ja) * | 2008-08-27 | 2010-03-11 | Fujifilm Corp | 研磨用組成物及びそれを用いた研磨方法 |
JP2012238831A (ja) * | 2011-01-25 | 2012-12-06 | Hitachi Chem Co Ltd | Cmp研磨液及びその製造方法、複合粒子の製造方法、並びに基体の研磨方法 |
JP2013033897A (ja) * | 2010-12-22 | 2013-02-14 | Jsr Corp | 化学機械研磨方法 |
JP2013082584A (ja) * | 2011-10-11 | 2013-05-09 | Fuso Chemical Co Ltd | 高純度単分散シリカ粒子及びその製造方法 |
WO2015200679A1 (en) * | 2014-06-25 | 2015-12-30 | Cabot Microelectronics Corporation | Tungsten chemical-mechanical polishing composition |
JP2016008157A (ja) * | 2014-06-25 | 2016-01-18 | 扶桑化学工業株式会社 | コアシェル型シリカ粒子を含有するコロイダルシリカの製造方法 |
JP2016517461A (ja) * | 2013-03-15 | 2016-06-16 | キャボット マイクロエレクトロニクス コーポレイション | 固体含有率の低いcmp組成物及びそれに関する方法 |
JP2016537438A (ja) * | 2013-09-24 | 2016-12-01 | キャボット マイクロエレクトロニクス コーポレイション | 高分子フィルムの化学的−機械的平坦化 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5597442A (en) | 1995-10-16 | 1997-01-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature |
US5643050A (en) * | 1996-05-23 | 1997-07-01 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) thickness monitor |
US6153525A (en) | 1997-03-13 | 2000-11-28 | Alliedsignal Inc. | Methods for chemical mechanical polish of organic polymer dielectric films |
US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
US6723143B2 (en) | 1998-06-11 | 2004-04-20 | Honeywell International Inc. | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials |
US6358853B2 (en) | 1998-09-10 | 2002-03-19 | Intel Corporation | Ceria based slurry for chemical-mechanical polishing |
US6270395B1 (en) | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
FR2785614B1 (fr) | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
US6315635B1 (en) | 1999-03-31 | 2001-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd | Method and apparatus for slurry temperature control in a polishing process |
US6375548B1 (en) * | 1999-12-30 | 2002-04-23 | Micron Technology, Inc. | Chemical-mechanical polishing methods |
US6736992B2 (en) | 2000-04-11 | 2004-05-18 | Honeywell International Inc. | Chemical mechanical planarization of low dielectric constant materials |
US6830503B1 (en) | 2002-01-11 | 2004-12-14 | Cabot Microelectronics Corporation | Catalyst/oxidizer-based CMP system for organic polymer films |
US20030162399A1 (en) * | 2002-02-22 | 2003-08-28 | University Of Florida | Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures |
TWI241626B (en) | 2003-06-02 | 2005-10-11 | Toshiba Corp | Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device |
US7390748B2 (en) | 2004-08-05 | 2008-06-24 | International Business Machines Corporation | Method of forming a polishing inhibiting layer using a slurry having an additive |
US20060124592A1 (en) | 2004-12-09 | 2006-06-15 | Miller Anne E | Chemical mechanical polish slurry |
KR100627589B1 (ko) | 2004-12-31 | 2006-09-25 | 제일모직주식회사 | 결함 발생률이 낮은 cmp 슬러리 조성물 및 그 제조방법 |
US7052373B1 (en) | 2005-01-19 | 2006-05-30 | Anji Microelectronics Co., Ltd. | Systems and slurries for chemical mechanical polishing |
US7294044B2 (en) | 2005-04-08 | 2007-11-13 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
JP2007138133A (ja) | 2005-10-21 | 2007-06-07 | Hitachi Chem Co Ltd | 有機膜研磨用研磨液及びこれを用いた有機膜の研磨方法 |
KR100880107B1 (ko) * | 2006-01-25 | 2009-01-21 | 주식회사 엘지화학 | Cmp 슬러리 및 이를 이용한 반도체 웨이퍼의 연마 방법 |
KR20080037802A (ko) | 2006-10-27 | 2008-05-02 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 연마 방법 |
KR100827591B1 (ko) | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
JP5329786B2 (ja) | 2007-08-31 | 2013-10-30 | 株式会社東芝 | 研磨液および半導体装置の製造方法 |
JP2009079137A (ja) * | 2007-09-26 | 2009-04-16 | Fujifilm Corp | 膜形成用組成物及び膜の製造方法 |
WO2010121029A2 (en) * | 2009-04-15 | 2010-10-21 | Sinmat, Inc. | Cyclic self-limiting cmp removal and associated processing tool |
US20100279435A1 (en) | 2009-04-30 | 2010-11-04 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
US8449636B2 (en) | 2010-08-09 | 2013-05-28 | Ferro Corporation | Easy rinsing polishing composition for polymer-based surfaces |
CN102465945A (zh) | 2010-11-12 | 2012-05-23 | 中国南车集团襄樊牵引电机有限公司 | 一种易拆卸定位销 |
CN102744668B (zh) * | 2011-04-20 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 抛光方法以及浮栅的形成方法 |
CN103834305B (zh) | 2012-11-22 | 2017-08-29 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
US20160068711A1 (en) | 2013-04-17 | 2016-03-10 | Samsung Sdi Co., Ltd. | Organic Film CMP Slurry Composition and Polishing Method Using Same |
US20150021513A1 (en) | 2013-07-17 | 2015-01-22 | Yun-jeong Kim | Cmp slurry composition for polishing an organic layer and method of forming a semiconductor device using the same |
US20150306731A1 (en) * | 2014-04-25 | 2015-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US9589786B2 (en) | 2014-04-28 | 2017-03-07 | National Center For Advanced Packaging Co., Ltd | Method for polishing a polymer surface |
KR102501107B1 (ko) * | 2014-06-25 | 2023-02-17 | 씨엠씨 머티리얼즈, 인코포레이티드 | 콜로이드성 실리카 화학적-기계적 연마 조성물 |
US10946494B2 (en) * | 2015-03-10 | 2021-03-16 | Showa Denko Materials Co., Ltd. | Polishing agent, stock solution for polishing agent, and polishing method |
US9783702B1 (en) * | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
-
2017
- 2017-03-29 US US15/472,976 patent/US10037889B1/en active Active
-
2018
- 2018-03-19 JP JP2018051445A patent/JP7355487B2/ja active Active
- 2018-03-26 CN CN201810250459.5A patent/CN108687649B/zh active Active
- 2018-03-26 TW TW107110202A patent/TWI760462B/zh active
- 2018-03-28 KR KR1020180035886A patent/KR102459039B1/ko active IP Right Grant
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326395A (ja) * | 1992-05-21 | 1993-12-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2001077064A (ja) * | 1999-07-19 | 2001-03-23 | Internatl Business Mach Corp <Ibm> | ポリマ層の平坦化方法 |
JP2003115441A (ja) * | 2001-10-03 | 2003-04-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2004128475A (ja) * | 2002-08-02 | 2004-04-22 | Jsr Corp | 化学機械研磨用水系分散体および半導体装置の製造方法 |
JP2007088424A (ja) * | 2005-08-24 | 2007-04-05 | Jsr Corp | 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 |
JP2009146998A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 半導体装置の製造方法 |
JP2010028086A (ja) * | 2008-06-16 | 2010-02-04 | Hitachi Chem Co Ltd | Cmp研磨剤、このcmp研磨剤を用いた研磨方法 |
JP2010056199A (ja) * | 2008-08-27 | 2010-03-11 | Fujifilm Corp | 研磨用組成物及びそれを用いた研磨方法 |
JP2013033897A (ja) * | 2010-12-22 | 2013-02-14 | Jsr Corp | 化学機械研磨方法 |
JP2012238831A (ja) * | 2011-01-25 | 2012-12-06 | Hitachi Chem Co Ltd | Cmp研磨液及びその製造方法、複合粒子の製造方法、並びに基体の研磨方法 |
JP2013082584A (ja) * | 2011-10-11 | 2013-05-09 | Fuso Chemical Co Ltd | 高純度単分散シリカ粒子及びその製造方法 |
JP2016517461A (ja) * | 2013-03-15 | 2016-06-16 | キャボット マイクロエレクトロニクス コーポレイション | 固体含有率の低いcmp組成物及びそれに関する方法 |
JP2016537438A (ja) * | 2013-09-24 | 2016-12-01 | キャボット マイクロエレクトロニクス コーポレイション | 高分子フィルムの化学的−機械的平坦化 |
WO2015200679A1 (en) * | 2014-06-25 | 2015-12-30 | Cabot Microelectronics Corporation | Tungsten chemical-mechanical polishing composition |
JP2016008157A (ja) * | 2014-06-25 | 2016-01-18 | 扶桑化学工業株式会社 | コアシェル型シリカ粒子を含有するコロイダルシリカの製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023171290A1 (ja) * | 2022-03-08 | 2023-09-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
Publication number | Publication date |
---|---|
KR20180110626A (ko) | 2018-10-10 |
TWI760462B (zh) | 2022-04-11 |
KR102459039B1 (ko) | 2022-10-25 |
CN108687649B (zh) | 2020-08-14 |
US10037889B1 (en) | 2018-07-31 |
JP7355487B2 (ja) | 2023-10-03 |
TW201840766A (zh) | 2018-11-16 |
CN108687649A (zh) | 2018-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7355487B2 (ja) | カチオン性粒子含有スラリー及びスピンオン炭素膜のcmpのためのその使用方法 | |
JP7067614B2 (ja) | 研磨液、研磨液セット及び研磨方法 | |
JP2019029660A (ja) | 調整可能な選択性を有する低砥粒cmpスラリー組成物 | |
JP7274844B2 (ja) | 浅溝分離に使用するための水性シリカスラリー及びアミンカルボン酸組成物並びにその使用方法 | |
WO2019182061A1 (ja) | 研磨液、研磨液セット及び研磨方法 | |
JP2019143119A (ja) | ポリシリコン研磨用の低ディッシングシリカ粒子の水性組成物 | |
TW201938778A (zh) | 半導體表面處理用組成物及半導體表面處理方法 | |
JP7231365B2 (ja) | 研磨における選択的窒化物除去のための水性アニオン性官能性シリカスラリー及びアミンカルボン酸組成物並びにその使用方法 | |
TWI760494B (zh) | 用於淺溝槽隔離的水性二氧化矽漿料組合物及其使用方法 | |
JP7274845B2 (ja) | 浅溝分離に使用するための水性低砥粒シリカスラリー及びアミンカルボン酸組成物並びにその製造方法及び使用方法 | |
KR102611005B1 (ko) | 얕은 트렌치 소자격리에서 사용하기 위한 수성 실리카 슬러리 조성물 및 이를 사용하는 방법 | |
TW202231806A (zh) | 研磨液、研磨液組及研磨方法 | |
JP7231364B2 (ja) | 研磨における選択的窒化物除去のための水性シリカスラリー及びアミンカルボン酸組成物並びにその使用方法 | |
JP2008182181A (ja) | 研磨用組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210305 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220405 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220613 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230829 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230921 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7355487 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |