JP2018152585A - 電子部品収納用パッケージ、電子装置および電子モジュール - Google Patents
電子部品収納用パッケージ、電子装置および電子モジュール Download PDFInfo
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- JP2018152585A JP2018152585A JP2018094508A JP2018094508A JP2018152585A JP 2018152585 A JP2018152585 A JP 2018152585A JP 2018094508 A JP2018094508 A JP 2018094508A JP 2018094508 A JP2018094508 A JP 2018094508A JP 2018152585 A JP2018152585 A JP 2018152585A
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- 239000004020 conductor Substances 0.000 claims abstract description 147
- 238000001465 metallisation Methods 0.000 claims abstract description 6
- 238000003860 storage Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 abstract description 39
- 238000005219 brazing Methods 0.000 abstract description 35
- 238000007789 sealing Methods 0.000 abstract description 15
- 238000003892 spreading Methods 0.000 abstract description 9
- 230000007480 spreading Effects 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 23
- 238000007747 plating Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0509—Holders; Supports for bulk acoustic wave devices consisting of adhesive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Acoustics & Sound (AREA)
- Geometry (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】電子部品収納用パッケージ100は、電子部品110の搭載部104を有した基部106と、基部上に搭載部を囲むように設けられた枠部105と、枠部上に設けられた枠状メタライズ層112と、枠部に設けられ、枠状メタライズ層と基部に設けられた中継導体117とを接続した側面導体115とを含んでおり、枠状メタライズ層は、一部が枠部に延在部119を有しており、絶縁膜116が延在部の一部を覆っている。
【選択図】図2
Description
数の電子部品が搭載される段状の内側面を設けるために、枠部105が2層以上の絶縁層で構成される場合もある。
Claims (7)
- 電子部品の搭載部を有した基部と、
該基部上に前記搭載部を囲むように設けられた枠部と、
該枠部上に設けられた枠状メタライズ層と、
前記枠部に設けられ、前記枠状メタライズ層と前記基部に設けられた中継導体とを接続した側面導体と、を含んでおり、
前記枠状メタライズ層は、一部が前記枠部に延在部を有しており、
絶縁膜が前記延在部の一部を覆っていることを特徴とする電子部品収納用パッケージ。 - 前記絶縁膜は、前記側面導体を覆っていることを特徴とする請求項1に記載の電子部品収納用パッケージ。
- 前記絶縁膜は、前記中継導体を覆っていることを特徴とする請求項1または2に記載の電子部品収納用パッケージ。
- 前記絶縁膜は、前記側面導体から前記中継導体にかけて連続して覆っていることを特徴とする請求項1〜3のいずれか1つに記載の電子部品収納用パッケージ。
- 前記絶縁膜は、前記側面導体および前記中継導体が露出しないように覆っていることを特徴とする請求項1〜4のいずれか1つに記載の電子部品収納用パッケージ。
- 請求項1〜5のいずれか1つに記載の電子部品収納用パッケージと、
該電子部品収納用パッケージに搭載された電子部品と、を有していることを特徴とする電子装置。 - 請求項6に記載の電子装置と、
該電子装置が接続されたモジュール用基板と、を有していることを特徴とする電子モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2015229783 | 2015-11-25 | ||
JP2015229783 | 2015-11-25 |
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JP2017552379A Division JP6342591B2 (ja) | 2015-11-25 | 2016-11-17 | 電子部品収納用パッケージ、電子装置および電子モジュール |
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JP2018152585A true JP2018152585A (ja) | 2018-09-27 |
JP6496865B2 JP6496865B2 (ja) | 2019-04-10 |
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JP2017552379A Active JP6342591B2 (ja) | 2015-11-25 | 2016-11-17 | 電子部品収納用パッケージ、電子装置および電子モジュール |
JP2018094508A Active JP6496865B2 (ja) | 2015-11-25 | 2018-05-16 | 電子部品収納用パッケージ、電子装置および電子モジュール |
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Country Status (6)
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US (2) | US10355665B2 (ja) |
EP (1) | EP3349243B1 (ja) |
JP (2) | JP6342591B2 (ja) |
KR (1) | KR101943895B1 (ja) |
CN (2) | CN107534022B (ja) |
WO (1) | WO2017090508A1 (ja) |
Cited By (2)
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WO2020208999A1 (ja) * | 2019-04-12 | 2020-10-15 | Ngkエレクトロデバイス株式会社 | 電子部品収納用パッケージ |
JP2022000876A (ja) * | 2020-06-19 | 2022-01-04 | Ngkエレクトロデバイス株式会社 | パッケージおよびその製造方法 |
Families Citing this family (10)
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KR101983630B1 (ko) | 2016-01-22 | 2019-05-29 | 쿄세라 코포레이션 | 전자 부품 수납용 패키지, 멀티피스 배선 기판, 전자 장치 및 전자 모듈 |
JP7021919B2 (ja) * | 2017-11-27 | 2022-02-17 | 京セラ株式会社 | 圧電振動デバイス及び圧電振動デバイスの製造方法 |
JP7062688B2 (ja) * | 2017-12-28 | 2022-05-06 | 京セラ株式会社 | 配線基板、電子装置及び電子モジュール |
US11116077B2 (en) | 2018-01-24 | 2021-09-07 | Kyocera Corporation | Wiring board, electronic device, and electronic module |
CN111727513B (zh) * | 2018-02-26 | 2024-08-20 | 京瓷株式会社 | 电子部件搭载用封装件、电子装置以及电子模块 |
US20190297758A1 (en) * | 2018-03-23 | 2019-09-26 | Intel IP Corporation | Electromagnetic shielding cap, an electrical system and a method for forming an electromagnetic shielding cap |
JP7075810B2 (ja) * | 2018-04-26 | 2022-05-26 | 京セラ株式会社 | 電子部品収納用パッケージ、電子装置、および電子モジュール |
JP7128352B2 (ja) * | 2019-04-22 | 2022-08-30 | 京セラ株式会社 | 電子部品収納用パッケージ、電子装置、および電子モジュール |
US20220385266A1 (en) * | 2019-06-27 | 2022-12-01 | Kyocera Corporation | Electronic component housing package, electronic device, and electronic module |
JP7244712B2 (ja) * | 2021-03-19 | 2023-03-22 | Ngkエレクトロデバイス株式会社 | パッケージ |
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JP5312223B2 (ja) | 2009-06-25 | 2013-10-09 | 京セラ株式会社 | 配線基板 |
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CN107534022A (zh) | 2018-01-02 |
US10355665B2 (en) | 2019-07-16 |
CN108461450A (zh) | 2018-08-28 |
US20180358949A1 (en) | 2018-12-13 |
US11394362B2 (en) | 2022-07-19 |
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EP3349243B1 (en) | 2019-09-04 |
JPWO2017090508A1 (ja) | 2017-12-28 |
CN107534022B (zh) | 2019-03-15 |
WO2017090508A1 (ja) | 2017-06-01 |
EP3349243A4 (en) | 2018-09-19 |
JP6496865B2 (ja) | 2019-04-10 |
EP3349243A1 (en) | 2018-07-18 |
KR20170122255A (ko) | 2017-11-03 |
KR101943895B1 (ko) | 2019-01-30 |
CN108461450B (zh) | 2021-06-18 |
JP6342591B2 (ja) | 2018-06-13 |
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