JP2018140915A5 - - Google Patents
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- Publication number
- JP2018140915A5 JP2018140915A5 JP2017037613A JP2017037613A JP2018140915A5 JP 2018140915 A5 JP2018140915 A5 JP 2018140915A5 JP 2017037613 A JP2017037613 A JP 2017037613A JP 2017037613 A JP2017037613 A JP 2017037613A JP 2018140915 A5 JP2018140915 A5 JP 2018140915A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- single crystal
- silicon single
- unit
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 description 36
- 239000013078 crystal Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 239000002019 doping agent Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 7
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017037613A JP6862916B2 (ja) | 2017-02-28 | 2017-02-28 | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
| CN201880013134.3A CN110678585B (zh) | 2017-02-28 | 2018-01-11 | 单晶硅锭的制造方法及单晶硅培育装置 |
| DE112018001046.5T DE112018001046B4 (de) | 2017-02-28 | 2018-01-11 | Verfahren zur Herstellung eines Siliziumeinkristall-Ingots und Siliziumeinkristall-Wachstumsvorrichtung |
| KR1020197024913A KR102253587B1 (ko) | 2017-02-28 | 2018-01-11 | 실리콘 단결정 잉곳 제조 방법 및 실리콘 단결정 육성 장치 |
| US16/487,957 US20200040480A1 (en) | 2017-02-28 | 2018-01-11 | Method of producing silicon single crystal ingot and silicon single crystal growth apparatus |
| PCT/JP2018/000518 WO2018159109A1 (ja) | 2017-02-28 | 2018-01-11 | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017037613A JP6862916B2 (ja) | 2017-02-28 | 2017-02-28 | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018140915A JP2018140915A (ja) | 2018-09-13 |
| JP2018140915A5 true JP2018140915A5 (https=) | 2019-11-14 |
| JP6862916B2 JP6862916B2 (ja) | 2021-04-21 |
Family
ID=63371168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017037613A Active JP6862916B2 (ja) | 2017-02-28 | 2017-02-28 | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20200040480A1 (https=) |
| JP (1) | JP6862916B2 (https=) |
| KR (1) | KR102253587B1 (https=) |
| CN (1) | CN110678585B (https=) |
| DE (1) | DE112018001046B4 (https=) |
| WO (1) | WO2018159109A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6922870B2 (ja) * | 2018-09-27 | 2021-08-18 | 株式会社Sumco | シリコン単結晶の製造方法 |
| TWI784689B (zh) * | 2020-09-29 | 2022-11-21 | 日商Ｓｕｍｃｏ股份有限公司 | 矽單結晶的製造方法 |
| CN113564693B (zh) * | 2021-08-02 | 2022-09-27 | 宁夏中欣晶圆半导体科技有限公司 | 低电阻率重掺砷硅单晶生产方法 |
| JP7359241B2 (ja) * | 2022-03-15 | 2023-10-11 | 株式会社Sumco | シリコン単結晶の製造方法 |
| CN117712204A (zh) * | 2023-02-23 | 2024-03-15 | 隆基绿能科技股份有限公司 | 一种低氧硅片及其制备方法 |
| CN119416539B (zh) * | 2025-01-03 | 2025-05-27 | 高景太阳能股份有限公司 | 拉晶工艺的控制方法、装置和拉晶系统 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121994A (en) | 1979-03-07 | 1980-09-19 | Hitachi Ltd | Preparing semiconductor single crystal |
| JPS61227986A (ja) * | 1985-03-30 | 1986-10-11 | Shin Etsu Handotai Co Ltd | 単結晶シリコン棒の製造方法 |
| JPS62113789A (ja) * | 1985-11-11 | 1987-05-25 | Nec Corp | 単結晶引上装置 |
| JPH0777995B2 (ja) | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の比抵抗コントロール方法 |
| JPH04221782A (ja) * | 1990-12-25 | 1992-08-12 | Nissan Motor Co Ltd | 超音波ドップラ方式対地速度計 |
| JP2816625B2 (ja) * | 1991-12-18 | 1998-10-27 | コマツ電子金属株式会社 | 単結晶製造装置およびその制御方法 |
| EP0625595B1 (en) * | 1993-03-29 | 2001-09-19 | Research Development Corporation Of Japan | Control of oxygen concentration in single crystal pulled up from melt containing group-V element |
| US7132091B2 (en) * | 2001-09-28 | 2006-11-07 | Memc Electronic Materials, Inc. | Single crystal silicon ingot having a high arsenic concentration |
| DE102005023992A1 (de) * | 2005-05-20 | 2006-11-23 | TRüTZSCHLER GMBH & CO. KG | Vorrichtung an einer Spinnereivorbereitungsmaschine, z.B. Karde, Krempel, Strecke, Kämmmaschine o.dgl., zum Ermitteln der Masse und/oder Masseschwankungen eines Fasermaterials, z.B. mindestens ein Faserband, Faservlies o.dgl., aus Baumwolle, Chemiefasern o. dgl. |
| JP5453749B2 (ja) | 2008-09-05 | 2014-03-26 | 株式会社Ｓｕｍｃｏ | 垂直シリコンデバイス用シリコンウェーハの製造方法及び垂直シリコンデバイス用シリコン単結晶引き上げ装置 |
| KR101254998B1 (ko) | 2008-11-25 | 2013-04-16 | 에스케이텔레콤 주식회사 | 호처리 메시지의 우회전송 제공 시스템 및 방법 |
| US8535439B2 (en) * | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
| CN201926623U (zh) * | 2010-12-14 | 2011-08-10 | 深圳市赛宝伦计算机技术有限公司 | 一种红外气体分析仪 |
| JP5595318B2 (ja) | 2011-03-29 | 2014-09-24 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上装置及び単結晶引き上げ方法 |
| US20150333193A1 (en) * | 2012-12-31 | 2015-11-19 | Memc Electronic Matrials S.P.A. | Indium-doped silicon wafer and solar cell using the same |
| US20180291524A1 (en) * | 2015-05-01 | 2018-10-11 | Corner Star Limited | Methods for producing single crystal ingots doped with volatile dopants |
-
2017
- 2017-02-28 JP JP2017037613A patent/JP6862916B2/ja active Active
-
2018
- 2018-01-11 US US16/487,957 patent/US20200040480A1/en not_active Abandoned
- 2018-01-11 CN CN201880013134.3A patent/CN110678585B/zh active Active
- 2018-01-11 DE DE112018001046.5T patent/DE112018001046B4/de active Active
- 2018-01-11 WO PCT/JP2018/000518 patent/WO2018159109A1/ja not_active Ceased
- 2018-01-11 KR KR1020197024913A patent/KR102253587B1/ko active Active
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