DE112018001046B4 - Verfahren zur Herstellung eines Siliziumeinkristall-Ingots und Siliziumeinkristall-Wachstumsvorrichtung - Google Patents
Verfahren zur Herstellung eines Siliziumeinkristall-Ingots und Siliziumeinkristall-Wachstumsvorrichtung Download PDFInfo
- Publication number
- DE112018001046B4 DE112018001046B4 DE112018001046.5T DE112018001046T DE112018001046B4 DE 112018001046 B4 DE112018001046 B4 DE 112018001046B4 DE 112018001046 T DE112018001046 T DE 112018001046T DE 112018001046 B4 DE112018001046 B4 DE 112018001046B4
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- gas
- single crystal
- silicon
- silicon single
- chamber
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 180
- 239000010703 silicon Substances 0.000 title claims abstract description 180
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 179
- 239000013078 crystal Substances 0.000 title claims abstract description 144
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000002019 doping agent Substances 0.000 claims abstract description 97
- 238000002231 Czochralski process Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 31
- 238000005259 measurement Methods 0.000 claims description 17
- 229910052787 antimony Inorganic materials 0.000 claims description 14
- 229910052785 arsenic Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 174
- 238000001704 evaporation Methods 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 17
- 239000000155 melt Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 230000001276 controlling effect Effects 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 238000005204 segregation Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004868 gas analysis Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 phosphorus compound Chemical class 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-037613 | 2017-02-28 | ||
| JP2017037613A JP6862916B2 (ja) | 2017-02-28 | 2017-02-28 | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
| PCT/JP2018/000518 WO2018159109A1 (ja) | 2017-02-28 | 2018-01-11 | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112018001046T5 DE112018001046T5 (de) | 2019-11-14 |
| DE112018001046B4 true DE112018001046B4 (de) | 2022-05-19 |
Family
ID=63371168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112018001046.5T Active DE112018001046B4 (de) | 2017-02-28 | 2018-01-11 | Verfahren zur Herstellung eines Siliziumeinkristall-Ingots und Siliziumeinkristall-Wachstumsvorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20200040480A1 (https=) |
| JP (1) | JP6862916B2 (https=) |
| KR (1) | KR102253587B1 (https=) |
| CN (1) | CN110678585B (https=) |
| DE (1) | DE112018001046B4 (https=) |
| WO (1) | WO2018159109A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6922870B2 (ja) * | 2018-09-27 | 2021-08-18 | 株式会社Sumco | シリコン単結晶の製造方法 |
| TWI784689B (zh) * | 2020-09-29 | 2022-11-21 | 日商Ｓｕｍｃｏ股份有限公司 | 矽單結晶的製造方法 |
| CN113564693B (zh) * | 2021-08-02 | 2022-09-27 | 宁夏中欣晶圆半导体科技有限公司 | 低电阻率重掺砷硅单晶生产方法 |
| JP7359241B2 (ja) * | 2022-03-15 | 2023-10-11 | 株式会社Sumco | シリコン単結晶の製造方法 |
| CN117712204A (zh) * | 2023-02-23 | 2024-03-15 | 隆基绿能科技股份有限公司 | 一种低氧硅片及其制备方法 |
| CN119416539B (zh) * | 2025-01-03 | 2025-05-27 | 高景太阳能股份有限公司 | 拉晶工艺的控制方法、装置和拉晶系统 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121994A (en) | 1979-03-07 | 1980-09-19 | Hitachi Ltd | Preparing semiconductor single crystal |
| JPH05221782A (ja) | 1991-12-18 | 1993-08-31 | Komatsu Denshi Kinzoku Kk | 単結晶製造装置およびその制御方法 |
| DE69019472T2 (de) | 1989-11-16 | 1996-02-15 | Shinetsu Handotai Kk | Verfahren zur Steuerung des spezifischen Widerstandes eines Einkristalles. |
| JP2010059032A (ja) | 2008-09-05 | 2010-03-18 | Sumco Corp | 垂直シリコンデバイス用シリコンウェーハ及びその製造方法、垂直シリコンデバイス用シリコン単結晶引き上げ装置、並びに、垂直シリコンデバイス |
| JP2012206874A (ja) | 2011-03-29 | 2012-10-25 | Covalent Materials Corp | 単結晶引上装置及び単結晶引き上げ方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227986A (ja) * | 1985-03-30 | 1986-10-11 | Shin Etsu Handotai Co Ltd | 単結晶シリコン棒の製造方法 |
| JPS62113789A (ja) * | 1985-11-11 | 1987-05-25 | Nec Corp | 単結晶引上装置 |
| JPH04221782A (ja) * | 1990-12-25 | 1992-08-12 | Nissan Motor Co Ltd | 超音波ドップラ方式対地速度計 |
| EP0625595B1 (en) * | 1993-03-29 | 2001-09-19 | Research Development Corporation Of Japan | Control of oxygen concentration in single crystal pulled up from melt containing group-V element |
| US7132091B2 (en) * | 2001-09-28 | 2006-11-07 | Memc Electronic Materials, Inc. | Single crystal silicon ingot having a high arsenic concentration |
| DE102005023992A1 (de) * | 2005-05-20 | 2006-11-23 | TRüTZSCHLER GMBH & CO. KG | Vorrichtung an einer Spinnereivorbereitungsmaschine, z.B. Karde, Krempel, Strecke, Kämmmaschine o.dgl., zum Ermitteln der Masse und/oder Masseschwankungen eines Fasermaterials, z.B. mindestens ein Faserband, Faservlies o.dgl., aus Baumwolle, Chemiefasern o. dgl. |
| KR101254998B1 (ko) | 2008-11-25 | 2013-04-16 | 에스케이텔레콤 주식회사 | 호처리 메시지의 우회전송 제공 시스템 및 방법 |
| US8535439B2 (en) * | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
| CN201926623U (zh) * | 2010-12-14 | 2011-08-10 | 深圳市赛宝伦计算机技术有限公司 | 一种红外气体分析仪 |
| US20150333193A1 (en) * | 2012-12-31 | 2015-11-19 | Memc Electronic Matrials S.P.A. | Indium-doped silicon wafer and solar cell using the same |
| US20180291524A1 (en) * | 2015-05-01 | 2018-10-11 | Corner Star Limited | Methods for producing single crystal ingots doped with volatile dopants |
-
2017
- 2017-02-28 JP JP2017037613A patent/JP6862916B2/ja active Active
-
2018
- 2018-01-11 US US16/487,957 patent/US20200040480A1/en not_active Abandoned
- 2018-01-11 CN CN201880013134.3A patent/CN110678585B/zh active Active
- 2018-01-11 DE DE112018001046.5T patent/DE112018001046B4/de active Active
- 2018-01-11 WO PCT/JP2018/000518 patent/WO2018159109A1/ja not_active Ceased
- 2018-01-11 KR KR1020197024913A patent/KR102253587B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121994A (en) | 1979-03-07 | 1980-09-19 | Hitachi Ltd | Preparing semiconductor single crystal |
| DE69019472T2 (de) | 1989-11-16 | 1996-02-15 | Shinetsu Handotai Kk | Verfahren zur Steuerung des spezifischen Widerstandes eines Einkristalles. |
| JPH05221782A (ja) | 1991-12-18 | 1993-08-31 | Komatsu Denshi Kinzoku Kk | 単結晶製造装置およびその制御方法 |
| JP2010059032A (ja) | 2008-09-05 | 2010-03-18 | Sumco Corp | 垂直シリコンデバイス用シリコンウェーハ及びその製造方法、垂直シリコンデバイス用シリコン単結晶引き上げ装置、並びに、垂直シリコンデバイス |
| JP2012206874A (ja) | 2011-03-29 | 2012-10-25 | Covalent Materials Corp | 単結晶引上装置及び単結晶引き上げ方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190109490A (ko) | 2019-09-25 |
| KR102253587B1 (ko) | 2021-05-18 |
| JP2018140915A (ja) | 2018-09-13 |
| CN110678585A (zh) | 2020-01-10 |
| JP6862916B2 (ja) | 2021-04-21 |
| WO2018159109A1 (ja) | 2018-09-07 |
| CN110678585B (zh) | 2021-08-24 |
| DE112018001046T5 (de) | 2019-11-14 |
| US20200040480A1 (en) | 2020-02-06 |
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