CN110678585B - 单晶硅锭的制造方法及单晶硅培育装置 - Google Patents

单晶硅锭的制造方法及单晶硅培育装置 Download PDF

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Publication number
CN110678585B
CN110678585B CN201880013134.3A CN201880013134A CN110678585B CN 110678585 B CN110678585 B CN 110678585B CN 201880013134 A CN201880013134 A CN 201880013134A CN 110678585 B CN110678585 B CN 110678585B
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gas
single crystal
crystal silicon
silicon
pulling
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CN110678585A (zh
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杉村涉
宝来正隆
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Sumco Corp
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Sumco Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201880013134.3A 2017-02-28 2018-01-11 单晶硅锭的制造方法及单晶硅培育装置 Active CN110678585B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-037613 2017-02-28
JP2017037613A JP6862916B2 (ja) 2017-02-28 2017-02-28 シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置
PCT/JP2018/000518 WO2018159109A1 (ja) 2017-02-28 2018-01-11 シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置

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CN110678585A CN110678585A (zh) 2020-01-10
CN110678585B true CN110678585B (zh) 2021-08-24

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US (1) US20200040480A1 (https=)
JP (1) JP6862916B2 (https=)
KR (1) KR102253587B1 (https=)
CN (1) CN110678585B (https=)
DE (1) DE112018001046B4 (https=)
WO (1) WO2018159109A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6922870B2 (ja) * 2018-09-27 2021-08-18 株式会社Sumco シリコン単結晶の製造方法
TWI784689B (zh) * 2020-09-29 2022-11-21 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法
CN113564693B (zh) * 2021-08-02 2022-09-27 宁夏中欣晶圆半导体科技有限公司 低电阻率重掺砷硅单晶生产方法
JP7359241B2 (ja) * 2022-03-15 2023-10-11 株式会社Sumco シリコン単結晶の製造方法
CN117712204A (zh) * 2023-02-23 2024-03-15 隆基绿能科技股份有限公司 一种低氧硅片及其制备方法
CN119416539B (zh) * 2025-01-03 2025-05-27 高景太阳能股份有限公司 拉晶工艺的控制方法、装置和拉晶系统

Citations (3)

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CN1865578A (zh) * 2005-05-20 2006-11-22 特鲁菲舍尔股份有限公司及两合公司 用于在纺纱准备机械中确定纤维材料质量和/或质量波动的装置
CN201926623U (zh) * 2010-12-14 2011-08-10 深圳市赛宝伦计算机技术有限公司 一种红外气体分析仪
CN105008595A (zh) * 2012-12-31 2015-10-28 Memc电子材料有限公司 通过直拉法制造铟掺杂硅

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JPS55121994A (en) 1979-03-07 1980-09-19 Hitachi Ltd Preparing semiconductor single crystal
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
JPS62113789A (ja) * 1985-11-11 1987-05-25 Nec Corp 単結晶引上装置
JPH0777995B2 (ja) 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の比抵抗コントロール方法
JPH04221782A (ja) * 1990-12-25 1992-08-12 Nissan Motor Co Ltd 超音波ドップラ方式対地速度計
JP2816625B2 (ja) * 1991-12-18 1998-10-27 コマツ電子金属株式会社 単結晶製造装置およびその制御方法
EP0625595B1 (en) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Control of oxygen concentration in single crystal pulled up from melt containing group-V element
US7132091B2 (en) * 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
JP5453749B2 (ja) 2008-09-05 2014-03-26 株式会社Ｓｕｍｃｏ 垂直シリコンデバイス用シリコンウェーハの製造方法及び垂直シリコンデバイス用シリコン単結晶引き上げ装置
KR101254998B1 (ko) 2008-11-25 2013-04-16 에스케이텔레콤 주식회사 호처리 메시지의 우회전송 제공 시스템 및 방법
US8535439B2 (en) * 2009-01-14 2013-09-17 Sumco Techxiv Corporation Manufacturing method for silicon single crystal
JP5595318B2 (ja) 2011-03-29 2014-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上装置及び単結晶引き上げ方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1865578A (zh) * 2005-05-20 2006-11-22 特鲁菲舍尔股份有限公司及两合公司 用于在纺纱准备机械中确定纤维材料质量和/或质量波动的装置
CN201926623U (zh) * 2010-12-14 2011-08-10 深圳市赛宝伦计算机技术有限公司 一种红外气体分析仪
CN105008595A (zh) * 2012-12-31 2015-10-28 Memc电子材料有限公司 通过直拉法制造铟掺杂硅

Also Published As

Publication number Publication date
KR20190109490A (ko) 2019-09-25
KR102253587B1 (ko) 2021-05-18
JP2018140915A (ja) 2018-09-13
CN110678585A (zh) 2020-01-10
DE112018001046B4 (de) 2022-05-19
JP6862916B2 (ja) 2021-04-21
WO2018159109A1 (ja) 2018-09-07
DE112018001046T5 (de) 2019-11-14
US20200040480A1 (en) 2020-02-06

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