JP2018056345A - ハードマスクおよびその製造方法 - Google Patents
ハードマスクおよびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052796 boron Inorganic materials 0.000 claims abstract description 135
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 134
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000001312 dry etching Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 229910052736 halogen Inorganic materials 0.000 claims description 12
- 150000002367 halogens Chemical class 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- TVJORGWKNPGCDW-UHFFFAOYSA-N aminoboron Chemical compound N[B] TVJORGWKNPGCDW-UHFFFAOYSA-N 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 114
- 235000012431 wafers Nutrition 0.000 description 21
- 239000011261 inert gas Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- SOLWORTYZPSMAK-UHFFFAOYSA-N n-[bis(dimethylamino)boranyl]-n-methylmethanamine Chemical compound CN(C)B(N(C)C)N(C)C SOLWORTYZPSMAK-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
本実施形態に係るハードマスクは、ボロン系膜からなり、典型的にはCVD膜である。ボロン系膜としては、ボロンと不可避不純物とからなるボロン膜であってもよいし、ボロン膜に所定の元素をドープしたドープ膜であってもよい。不可避不純物としては、原料にもよるが、水素(H)、酸素(O)、炭素(C)等が含まれる。ドープする元素としては、Si、N、C、ハロゲン元素等のうち一種または二種以上を用いることができる。ドープ膜としては、例えばBSi膜やBN膜等が形成される。ドープ元素の含有量は50at%以下であることが好ましい。
図1では、3Dデバイスの製造工程に本実施形態のハードマスクを適用しており、SiO2膜101とSiN膜102を複数回繰り返して形成された厚い積層膜103の上に、ボロン系膜からなるハードマスク104を形成し(図1(a))、ハードマスク104をエッチングマスクとして、積層膜103を深さ方向に、500nm以上、例えば1〜5μmのトレンチ105を形成する(図1(b))。
このようなボロン系膜からなるハードマスクは、CVDによりボロン系膜を成膜することにより製造することができる。ボロン系膜がボロン膜の場合には、被処理基板、例えば半導体ウエハを所定の処理容器内に収容し、処理容器内を所定の圧力の真空状態にし、被処理基板を所定の温度に加熱した状態で、処理容器内に成膜原料ガスとしてボロン含有ガスを供給し、被処理基板上でボロン含有ガスを熱分解させる。これにより被処理基板上にボロン膜が成膜される。
図5は、本実施形態のハードマスクを製造するためのボロン系膜の成膜装置の第1の例を示す縦断面図であり、ボロン系膜としてボロン膜を成膜する場合を示す図である。
図6は、本実施形態のハードマスクを製造するためのボロン系膜の成膜装置の第2の例を示す縦断面図であり、ボロン系膜としてボロンに他の元素をドープしたドープ膜を成膜する場合を示す図である。
第1の例の成膜装置1または第2の例の成膜装置1′の成膜シーケンスの一例について図7を参照して説明する。図7は、成膜装置1または成膜装置1′によりボロン系膜を成膜する際のタイミングチャートであり、温度、圧力、導入ガス、レシピステップを示している。
以上、本発明の実施形態について説明したが、本発明は、上記の実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
2;加熱炉
4;ヒータ
10;処理容器
20;ウエハボート
21;ボロン含有ガス供給機構
22;ドープガス供給機構
23;不活性ガス供給機構
25;ボロン含有ガス供給源
29;ドープガス供給源
38;排気管
39;真空ポンプ
50;制御部
101;SiO2膜
102;SiN膜
103;積層膜
104;ハードマスク
105;トレンチ
W;半導体ウエハ(被処理基板)
Claims (17)
- SiO2膜を含む膜に、ドライエッチングにより500nm以上の深さを有する凹部を形成するためのエッチングマスクとして用いられ、ボロン系膜を有することを特徴とするハードマスク。
- 前記ボロン系膜は、ボロンと不可避不純物からなるボロン膜であることを特徴とする請求項1に記載のハードマスク。
- 前記ボロン系膜は、ボロン膜に所定の元素をドープしたドープ膜であることを特徴とする請求項1に記載のハードマスク。
- 前記所定の元素は、Si、N、C、およびハロゲン元素のうち一種または二種以上であることを特徴とする請求項3に記載のハードマスク。
- 前記ボロン系膜はCVD膜であることを特徴とする請求項1から請求項4のいずれか1項に記載のハードマスク。
- 前記ボロン系膜の表面にArプラズマまたはH2プラズマによるプラズマ改質層を有することを特徴とする請求項1から請求項5のいずれか1項に記載のハードマスク。
- 前記ボロン系膜の表面にボロンの酸化を抑制するための保護膜を有することを特徴とする請求項1から請求項6のいずれか1項に記載のハードマスク。
- 前記保護膜は、SiN膜、SiC膜、SiCN膜、およびアモルファスシリコン膜から選択される膜であることを特徴とする請求項7に記載のハードマスク。
- 被処理基板のSiO2膜を含む膜に、ドライエッチングにより500nm以上の深さを有する凹部を形成するためのエッチングマスクとして用いられるハードマスクを形成するハードマスクの製造方法であって、
前記被処理基板を所定温度に加熱しつつ、前記SiO2膜を含む膜の表面に少なくともボロン含有ガスを供給してCVDによりボロン系膜を成膜する工程を有することを特徴とするハードマスクの製造方法。 - 前記ボロン系膜を成膜する工程は、前記SiO2膜を含む膜の表面に前記ボロン含有ガスのみを供給して、前記ボロン系膜としてボロン膜を成膜することを特徴とする請求項9に記載のハードマスクの製造方法。
- 前記ボロン系膜を成膜する工程は、前記SiO2膜を含む膜の表面に前記ボロン含有ガスおよび所定の元素をドープするためのドープガスを供給して、前記ボロン系膜としてボロン膜に所定の元素がドープされたドープ膜を成膜することを特徴とする請求項9に記載のハードマスクの製造方法。
- 前記所定の元素は、Si、N、C、およびハロゲン元素のうち一種または二種以上であり、ドープガスとしては、前記所定の元素がSiの場合はSi含有ガスを用い、前記所定の元素がNの場合はN含有ガスを用い、前記所定の元素がCの場合はC含有ガスを用い、前記所定の元素がハロゲン元素である場合はハロゲン含有ガスを用いることを特徴とする請求項11に記載のハードマスクの製造方法。
- 前記ボロン含有ガスは、ジボランガス、三塩化ボロンガス、アルキルボランガス、およびアミノボランガスからなる群から選択された少なくとも一種であることを特徴とする請求項9から請求項12のいずれか1項に記載のハードマスクの製造方法。
- 前記ボロン系膜を成膜する際の被処理基板の温度は、200〜500℃であることを特徴とする請求項9から請求項13のいずれか1項に記載のハードマスクの製造方法。
- 前記ボロン系膜の表面に、ArプラズマまたはH2プラズマによるプラズマ処理を施す工程をさらに有することを特徴とする請求項9から請求項14のいずれか1項に記載のハードマスクの製造方法。
- 前記ボロン膜の表面に、ボロンの酸化を抑制するための保護膜を形成する工程をさらに有することを特徴とする請求項9から請求項15のいずれか1項に記載のハードマスクの製造方法。
- 前記保護膜は、SiN膜、SiC膜、SiCN膜、およびアモルファスシリコン膜から選択される膜であることを特徴とする請求項16に記載のハードマスクの製造方法。
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