JP2020167307A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP2020167307A JP2020167307A JP2019067832A JP2019067832A JP2020167307A JP 2020167307 A JP2020167307 A JP 2020167307A JP 2019067832 A JP2019067832 A JP 2019067832A JP 2019067832 A JP2019067832 A JP 2019067832A JP 2020167307 A JP2020167307 A JP 2020167307A
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- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 239000002994 raw material Substances 0.000 claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000006185 dispersion Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 6
- 150000002367 halogens Chemical class 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 53
- 239000010703 silicon Substances 0.000 abstract description 53
- 239000007789 gas Substances 0.000 description 195
- 235000012431 wafers Nutrition 0.000 description 52
- 239000004065 semiconductor Substances 0.000 description 51
- 238000000034 method Methods 0.000 description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 19
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 17
- 239000000460 chlorine Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KVEARUYYTYRPGK-UHFFFAOYSA-N N-ethyl-N-germylethanamine Chemical compound CCN([GeH3])CC KVEARUYYTYRPGK-UHFFFAOYSA-N 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- -1 SiCl 4 Chemical compound 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- FCNQZDQTHQTUMZ-UHFFFAOYSA-N n-germyl-n-methylmethanamine Chemical compound CN(C)[GeH3] FCNQZDQTHQTUMZ-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/042—Changing their shape, e.g. forming recesses
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76855—After-treatment introducing at least one additional element into the layer
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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Abstract
Description
最初に、CVD(Chemical Vapor Deposition:化学気相堆積)により、シリコン膜を成膜する場合について説明する。CVDによりアモルファス(非晶質)シリコン膜を成膜する方法としては、原料ガスとして、モノシラン(SiH4)を用いる方法と、ジシラン(Si2H6)を用いる方法とがある。図1に示されるように、表面に凹凸が形成された基板に、モノシランを原料ガスとし、CVDによりアモルファスシリコン膜を成膜した場合には、成膜されたアモルファスシリコン膜は、ステップカバレッジは良好であるが、表面粗さはあまり良好ではない。また、凹凸のある基板にジシランを原料ガスとして、CVDによりアモルファスシリコン膜を成膜した場合には、成膜されたアモルファスシリコン膜は、表面粗さは良好であるが、ステップカバレッジはあまり良好ではない。
本実施の形態における基板処理装置について、図2及び図3に基づき説明する。本実施の形態における基板処理装置は、複数の基板に同時に一括して成膜をすることのできるバッチ式の縦型の基板処理装置である。
次に、本実施の形態における基板処理装置10により半導体ウエハWに、半導体膜であるシリコン膜を成膜する方法について説明する。まず、昇降部68により複数の半導体ウエハWを保持したウエハボート38を処理容器34の内部に搬入し、蓋体36により処理容器34の下端の開口部を塞ぎ密閉し、排気部41により処理容器34の内部の圧力が所定の圧力になるまで排気する。この後、加熱部42により処理容器34内の半導体ウエハW及びガス供給管76内の混合ガスを加熱するとともに、ガス供給管76の分散ノズル部76Aのガス孔76Bから第1の原料ガスと第2の原料ガスとの混合ガスを供給し、シリコン膜を成膜する。この際、ウエハボート38を回転させることにより、半導体ウエハWを回転させて、シリコン膜の成膜を行う。
次に、本実施の形態における基板処理装置を用いて上記のような成膜方法により成膜されたシリコン膜と、図9に示される構造の基板処理装置を用いて成膜されたシリコン膜とにおいて、基板間における膜厚の面内均一性について説明する。尚、膜厚の面内均一性の値は、基板に成膜されたシリコン膜の最も厚い膜厚をMAX、最も薄い膜厚をMIN、膜厚の平均をAVEとした場合、(MAX−MIN)/AVE×(1/2)×100より算出される値である。
次に、本実施の形態における半導体装置の成膜方法の変形例について、図12〜図14に基づき説明する。
34 処理容器
36 蓋体
40 ガス供給部
41 排気部
42 加熱部
44 内管
46 外管
48 ノズル収容部
50 凸部
52 開口
54 マニホールド
76 ガス供給管
76A 分散ノズル部
76B ガス孔
78 ガス供給管
78A 分散ノズル部
78B ガス孔
80 ガス供給管
80A 分散ノズル部
80B ガス孔
95 制御部
110 原料ガス混合部
111 第1の原料ガス供給源
112 流量制御器
113 開閉弁
121 第2の原料ガス供給源
122 流量制御器
123 開閉弁
131 パージガス供給源
132 流量制御器
133 開閉弁
W 半導体ウエハ
Claims (7)
- 内部に複数の基板を収容する処理容器と、
前記処理容器の内部に、SiまたはGeと、Hとを含む化合物の第1の原料ガスと、SiまたはGeと、ハロゲン元素とを含む化合物の第2の原料ガスを供給するガス供給部と、
前記処理容器の内部を排気する排気部と、
を有し、
前記ガス供給部は、前記第1の原料ガス及び前記第2の原料ガスを放出する複数のガス孔が設けられた分散ノズル部を有しており、
前記分散ノズル部内の前記第1の原料ガス及び前記第2の原料ガスを加熱する加熱部を有する基板処理装置。 - 前記ガス供給部は、原料ガス混合部に接続されており、前記原料ガス混合部において、前記第1の原料ガスと前記第2の原料ガスとが混合された混合ガスが、前記処理容器の内部に供給される請求項1に記載の基板処理装置。
- 前記複数の基板は、前記処理容器の内部に前記基板面に垂直方向に配置されており、
前記分散ノズル部は、前記基板面に対し垂直方向に伸びており、複数のガス孔が設けられている請求項1または2に記載の基板処理装置。 - 前記分散ノズル部の複数のガス孔から前記基板に対して、前記第1の原料ガス及び前記第2の原料ガスを平行に吐出し、前記基板を挟んで前記分散ノズル部と対向する位置に設けられた開口から排気する請求項1から3のいずれかに記載の基板処理装置。
- 前記第1の原料ガスは、SiH4またはSi2H6であり、
前記第2の原料ガスは、SiCl4、SiHCl3、SiH2Cl2、SiH3Cl、Si2Cl6のうちのいずれかを含む請求項1から4のいずれかに記載の基板処理装置。 - 前記第1の原料ガスは、SiH4であり、
前記第2の原料ガスは、SiH2Cl2である請求項1から4のいずれかに記載の基板処理装置。 - 前記加熱部は、更に前記基板を加熱するものである請求項1から6のいずれかに記載の基板処理装置。
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