JP2018046253A5 - - Google Patents

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Publication number
JP2018046253A5
JP2018046253A5 JP2016182023A JP2016182023A JP2018046253A5 JP 2018046253 A5 JP2018046253 A5 JP 2018046253A5 JP 2016182023 A JP2016182023 A JP 2016182023A JP 2016182023 A JP2016182023 A JP 2016182023A JP 2018046253 A5 JP2018046253 A5 JP 2018046253A5
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JP
Japan
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semiconductor region
insulating portion
insulating
electrode
insulating layer
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JP2016182023A
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English (en)
Japanese (ja)
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JP6649216B2 (ja
JP2018046253A (ja
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Priority to JP2016182023A priority Critical patent/JP6649216B2/ja
Priority claimed from JP2016182023A external-priority patent/JP6649216B2/ja
Priority to US15/448,126 priority patent/US9947751B2/en
Priority to CN201710377247.9A priority patent/CN107833919B/zh
Publication of JP2018046253A publication Critical patent/JP2018046253A/ja
Priority to US15/943,147 priority patent/US11011609B2/en
Publication of JP2018046253A5 publication Critical patent/JP2018046253A5/ja
Application granted granted Critical
Publication of JP6649216B2 publication Critical patent/JP6649216B2/ja
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JP2016182023A 2016-09-16 2016-09-16 半導体装置およびその製造方法 Active JP6649216B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016182023A JP6649216B2 (ja) 2016-09-16 2016-09-16 半導体装置およびその製造方法
US15/448,126 US9947751B2 (en) 2016-09-16 2017-03-02 Semiconductor device and method of manufacturing the same
CN201710377247.9A CN107833919B (zh) 2016-09-16 2017-05-25 半导体装置及其制造方法
US15/943,147 US11011609B2 (en) 2016-09-16 2018-04-02 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016182023A JP6649216B2 (ja) 2016-09-16 2016-09-16 半導体装置およびその製造方法

Publications (3)

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JP2018046253A JP2018046253A (ja) 2018-03-22
JP2018046253A5 true JP2018046253A5 (cg-RX-API-DMAC7.html) 2018-10-11
JP6649216B2 JP6649216B2 (ja) 2020-02-19

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JP2016182023A Active JP6649216B2 (ja) 2016-09-16 2016-09-16 半導体装置およびその製造方法

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US (2) US9947751B2 (cg-RX-API-DMAC7.html)
JP (1) JP6649216B2 (cg-RX-API-DMAC7.html)
CN (1) CN107833919B (cg-RX-API-DMAC7.html)

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JP6744270B2 (ja) * 2017-09-20 2020-08-19 株式会社東芝 半導体装置及びその製造方法
JP6864640B2 (ja) 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法
JP6970068B2 (ja) * 2018-09-14 2021-11-24 株式会社東芝 半導体装置
JP7370781B2 (ja) * 2019-09-24 2023-10-30 株式会社東芝 半導体装置
JP7317752B2 (ja) 2020-03-17 2023-07-31 株式会社東芝 半導体装置
JP7354035B2 (ja) 2020-03-19 2023-10-02 株式会社東芝 半導体装置
CN111524976B (zh) * 2020-04-28 2021-08-17 电子科技大学 一种低栅电荷的功率mos器件及其制造方法
CN111599866A (zh) * 2020-05-29 2020-08-28 电子科技大学 具有u型分离栅的低栅电荷功率mosfet器件及其制造方法
JP7337767B2 (ja) * 2020-09-18 2023-09-04 株式会社東芝 半導体装置及びその製造方法
JP7404204B2 (ja) 2020-09-18 2023-12-25 株式会社東芝 半導体装置の製造方法
JP7474214B2 (ja) * 2021-03-17 2024-04-24 株式会社東芝 半導体装置
JP7596216B2 (ja) * 2021-05-27 2024-12-09 株式会社東芝 半導体装置
US20230207682A1 (en) * 2021-12-23 2023-06-29 Vanguard International Semiconductor Corporation Semiconductor device and method forming the same
JP2024050092A (ja) * 2022-09-29 2024-04-10 三菱電機株式会社 半導体装置および半導体装置の製造方法

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