JP2018016536A - セラミックス部材 - Google Patents
セラミックス部材 Download PDFInfo
- Publication number
- JP2018016536A JP2018016536A JP2016150798A JP2016150798A JP2018016536A JP 2018016536 A JP2018016536 A JP 2018016536A JP 2016150798 A JP2016150798 A JP 2016150798A JP 2016150798 A JP2016150798 A JP 2016150798A JP 2018016536 A JP2018016536 A JP 2018016536A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- metal
- brazing material
- terminal
- stop hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 65
- 238000005219 brazing Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 38
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000005304 joining Methods 0.000 abstract description 6
- 239000000945 filler Substances 0.000 abstract description 4
- 238000007711 solidification Methods 0.000 abstract 2
- 230000008023 solidification Effects 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
Abstract
【解決手段】セラミックス部材100は、端子30が埋設されているセラミックス基体10と、セラミックス基体10に形成され、セラミックス基体10の下面と端子30とを連通する止め穴11と、止め穴11内に挿入され、端子30とろう材固化部70を介して接続されている接続部材40とを備えている。止め穴11は、内周面に囲まれた空間が、少なくとも底面11aにおいて、周方向について少なくとも部分的に外側に拡がっている拡大部11bを有しており、拡大部11bの内部にろう材固化部70の少なくも一部が存在している。
【選択図】図2
Description
Claims (4)
- 第1の金属部材が埋設されているセラミックス基体と、
前記セラミックス基体に形成され、前記セラミックス基体の下面と前記第1の金属部材とを連通する止め穴と、
前記止め穴内に挿入され、前記第1の金属部材とろう材固化部を介して接続されている第2の金属部材とを備えたセラミックス部材であって、
前記止め穴は、内周面に囲まれた空間が、少なくとも底面において、周方向について少なくとも部分的に外側に拡がっている拡大部を有しており、前記拡大部の内部に前記ろう材固化部の少なくも一部が存在していることを特徴とするセラミックス部材。 - 請求項1に記載のセラミックス部材であって、
前記拡大部は、前記止め穴の前記底面において全周に亘って外側に拡がっていることを特徴とするセラミックス部材。 - 請求項1又は2に記載のセラミックス部材であって、
前記ろう材固化部は、前記第1及び第2の金属部材に対する濡れ性が、前記セラミックス基体に対する濡れ性よりも高いろう材が固化している層であることを特徴とするセラミックス部材。 - 請求項1から3のいずれか1項に記載のセラミックス部材であって、
前記ろう材固化部は、活性金属を含まないろう材が固化している層であることを特徴とするセラミックス部材。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016150798A JP6693832B2 (ja) | 2016-07-29 | 2016-07-29 | セラミックス部材 |
US15/659,051 US10515836B2 (en) | 2016-07-29 | 2017-07-25 | Ceramic member |
TW106125446A TWI679724B (zh) | 2016-07-29 | 2017-07-28 | 陶瓷構件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016150798A JP6693832B2 (ja) | 2016-07-29 | 2016-07-29 | セラミックス部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018016536A true JP2018016536A (ja) | 2018-02-01 |
JP6693832B2 JP6693832B2 (ja) | 2020-05-13 |
Family
ID=61009849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016150798A Active JP6693832B2 (ja) | 2016-07-29 | 2016-07-29 | セラミックス部材 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10515836B2 (ja) |
JP (1) | JP6693832B2 (ja) |
TW (1) | TWI679724B (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019165126A (ja) * | 2018-03-20 | 2019-09-26 | 日本特殊陶業株式会社 | セラミックス基板構造体及びその製造方法 |
JP2019182683A (ja) * | 2018-04-04 | 2019-10-24 | 日本特殊陶業株式会社 | セラミックス構造体 |
JP2019185905A (ja) * | 2018-04-04 | 2019-10-24 | 日本特殊陶業株式会社 | セラミックス部材および緩衝部材の製造方法 |
JP2020033247A (ja) * | 2018-08-22 | 2020-03-05 | 日本特殊陶業株式会社 | 接合体 |
WO2020067357A1 (ja) * | 2018-09-28 | 2020-04-02 | 京セラ株式会社 | セラミック構造体及びウェハ用システム |
WO2020110850A1 (ja) * | 2018-11-30 | 2020-06-04 | 京セラ株式会社 | セラミック構造体及びセラミック構造体の製造方法 |
WO2020196339A1 (ja) * | 2019-03-26 | 2020-10-01 | 日本特殊陶業株式会社 | 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター |
JP7498605B2 (ja) | 2020-07-01 | 2024-06-12 | 日本特殊陶業株式会社 | セラミックス部材、保持装置、及びセラミックス部材の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019060819A (ja) * | 2017-09-28 | 2019-04-18 | 日本特殊陶業株式会社 | 電子部品検査装置用配線基板 |
US11961747B2 (en) * | 2018-03-28 | 2024-04-16 | Kyocera Corporation | Heater and heater system |
KR20220018421A (ko) * | 2020-08-06 | 2022-02-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP7414747B2 (ja) * | 2021-01-20 | 2024-01-16 | 日本碍子株式会社 | ウエハ載置台及びその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10273371A (ja) * | 1997-01-29 | 1998-10-13 | Ngk Insulators Ltd | 金属部材とセラミックス部材との接合構造およびその製造方法 |
JPH1112053A (ja) * | 1997-06-20 | 1999-01-19 | Ngk Insulators Ltd | セラミックスの接合構造およびその製造方法 |
JP2009188394A (ja) * | 2008-01-08 | 2009-08-20 | Ngk Insulators Ltd | 接合構造及び半導体製造装置 |
JP2009188389A (ja) * | 2008-01-08 | 2009-08-20 | Ngk Insulators Ltd | 接合構造及び半導体製造装置 |
JP2013112586A (ja) * | 2011-11-30 | 2013-06-10 | Kyocera Corp | セラミック体と金属体との接合体 |
Family Cites Families (6)
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JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
US8414704B2 (en) * | 2008-01-08 | 2013-04-09 | Ngk Insulators, Ltd. | Bonding structure and semiconductor device manufacturing apparatus |
US8908349B2 (en) * | 2011-03-31 | 2014-12-09 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus |
JP5348439B2 (ja) * | 2011-09-30 | 2013-11-20 | Toto株式会社 | 静電チャック |
JP5807032B2 (ja) * | 2012-03-21 | 2015-11-10 | 日本碍子株式会社 | 加熱装置及び半導体製造装置 |
JP6378942B2 (ja) | 2014-06-12 | 2018-08-22 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
-
2016
- 2016-07-29 JP JP2016150798A patent/JP6693832B2/ja active Active
-
2017
- 2017-07-25 US US15/659,051 patent/US10515836B2/en active Active
- 2017-07-28 TW TW106125446A patent/TWI679724B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10273371A (ja) * | 1997-01-29 | 1998-10-13 | Ngk Insulators Ltd | 金属部材とセラミックス部材との接合構造およびその製造方法 |
JPH1112053A (ja) * | 1997-06-20 | 1999-01-19 | Ngk Insulators Ltd | セラミックスの接合構造およびその製造方法 |
JP2009188394A (ja) * | 2008-01-08 | 2009-08-20 | Ngk Insulators Ltd | 接合構造及び半導体製造装置 |
JP2009188389A (ja) * | 2008-01-08 | 2009-08-20 | Ngk Insulators Ltd | 接合構造及び半導体製造装置 |
JP2013112586A (ja) * | 2011-11-30 | 2013-06-10 | Kyocera Corp | セラミック体と金属体との接合体 |
Cited By (21)
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JP2019165126A (ja) * | 2018-03-20 | 2019-09-26 | 日本特殊陶業株式会社 | セラミックス基板構造体及びその製造方法 |
JP7014651B2 (ja) | 2018-03-20 | 2022-02-01 | 日本特殊陶業株式会社 | セラミックス基板構造体及びその製造方法 |
JP7010750B2 (ja) | 2018-04-04 | 2022-01-26 | 日本特殊陶業株式会社 | セラミックス部材および緩衝部材の製造方法 |
JP2019182683A (ja) * | 2018-04-04 | 2019-10-24 | 日本特殊陶業株式会社 | セラミックス構造体 |
JP2019185905A (ja) * | 2018-04-04 | 2019-10-24 | 日本特殊陶業株式会社 | セラミックス部材および緩衝部材の製造方法 |
JP7025268B2 (ja) | 2018-04-04 | 2022-02-24 | 日本特殊陶業株式会社 | セラミックス構造体 |
JP2020033247A (ja) * | 2018-08-22 | 2020-03-05 | 日本特殊陶業株式会社 | 接合体 |
JP7265941B2 (ja) | 2018-08-22 | 2023-04-27 | 日本特殊陶業株式会社 | 接合体 |
JP7175324B2 (ja) | 2018-09-28 | 2022-11-18 | 京セラ株式会社 | セラミック構造体及びウェハ用システム |
JPWO2020067357A1 (ja) * | 2018-09-28 | 2021-09-02 | 京セラ株式会社 | セラミック構造体及びウェハ用システム |
WO2020067357A1 (ja) * | 2018-09-28 | 2020-04-02 | 京セラ株式会社 | セラミック構造体及びウェハ用システム |
JPWO2020110850A1 (ja) * | 2018-11-30 | 2021-10-14 | 京セラ株式会社 | セラミック構造体及びセラミック構造体の製造方法 |
WO2020110850A1 (ja) * | 2018-11-30 | 2020-06-04 | 京セラ株式会社 | セラミック構造体及びセラミック構造体の製造方法 |
JP7195336B2 (ja) | 2018-11-30 | 2022-12-23 | 京セラ株式会社 | セラミック構造体及びセラミック構造体の製造方法 |
KR20210107085A (ko) * | 2019-03-26 | 2021-08-31 | 니뽄 도쿠슈 도교 가부시키가이샤 | 전극 매설 부재 및 그 제조 방법, 정전 척, 세라믹스제 히터 |
CN113196870A (zh) * | 2019-03-26 | 2021-07-30 | 日本特殊陶业株式会社 | 电极埋设构件和其制造方法、静电卡盘、陶瓷制加热器 |
JPWO2020196339A1 (ja) * | 2019-03-26 | 2021-04-08 | 日本特殊陶業株式会社 | 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター |
WO2020196339A1 (ja) * | 2019-03-26 | 2020-10-01 | 日本特殊陶業株式会社 | 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター |
KR102527439B1 (ko) | 2019-03-26 | 2023-04-28 | 니뽄 도쿠슈 도교 가부시키가이샤 | 전극 매설 부재 및 그 제조 방법, 정전 척, 세라믹스제 히터 |
CN113196870B (zh) * | 2019-03-26 | 2023-09-29 | 日本特殊陶业株式会社 | 电极埋设构件和其制造方法、静电卡盘、陶瓷制加热器 |
JP7498605B2 (ja) | 2020-07-01 | 2024-06-12 | 日本特殊陶業株式会社 | セラミックス部材、保持装置、及びセラミックス部材の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10515836B2 (en) | 2019-12-24 |
JP6693832B2 (ja) | 2020-05-13 |
TW201824445A (zh) | 2018-07-01 |
US20180033668A1 (en) | 2018-02-01 |
TWI679724B (zh) | 2019-12-11 |
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