WO2020196339A1 - 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター - Google Patents
電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター Download PDFInfo
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- WO2020196339A1 WO2020196339A1 PCT/JP2020/012499 JP2020012499W WO2020196339A1 WO 2020196339 A1 WO2020196339 A1 WO 2020196339A1 JP 2020012499 W JP2020012499 W JP 2020012499W WO 2020196339 A1 WO2020196339 A1 WO 2020196339A1
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- Prior art keywords
- electrode
- embedded
- molded body
- connecting member
- powder
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- 239000000919 ceramic Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 38
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 38
- 239000010937 tungsten Substances 0.000 claims abstract description 38
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 32
- 239000011733 molybdenum Substances 0.000 claims abstract description 32
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 17
- 239000000470 constituent Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 84
- 239000000843 powder Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000002994 raw material Substances 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 15
- 238000005245 sintering Methods 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 21
- 238000010304 firing Methods 0.000 description 20
- 238000005219 brazing Methods 0.000 description 19
- 238000005238 degreasing Methods 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910000833 kovar Inorganic materials 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910017398 Au—Ni Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
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- 239000011777 magnesium Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
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- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- -1 sialon Chemical compound 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Definitions
- the present invention relates to an electrode embedded member in which an electrode is embedded inside a ceramic substrate and a method for manufacturing the electrode embedded member.
- the electrode-embedded member is used, for example, as a ceramic heater or an electrostatic chuck incorporated in a semiconductor manufacturing apparatus.
- an electrode-embedded member formed by embedding a metal electrode (internal electrode) inside a plate-shaped substrate made of ceramics such as aluminum nitride (AlN) is known.
- a hole (terminal hole) is formed in a ceramic substrate by machining, a metal electrode inside the substrate is exposed in this hole, and a cylindrical metal terminal is inserted into the hole to metal. The tip surface of the terminal is brazed to the metal electrode inside the substrate.
- the electrode-embedded member is incorporated in, for example, a semiconductor manufacturing apparatus (etching apparatus, CVD apparatus, etc.) and used for electrostatic chucking and heating of a semiconductor wafer, and is repeatedly exposed to a high temperature in a usage environment. There is.
- a semiconductor manufacturing apparatus etching apparatus, CVD apparatus, etc.
- Japanese Patent No. 3776499 proposes a technique of reducing the stress remaining on the substrate during the manufacture of the electrode-embedded member and suppressing the cracks generated on the substrate.
- the conventional electrode-embedded member 100 includes an internal electrode 102 embedded in a substrate 101 made of ceramics such as aluminum nitride (AlN), and the back surface side of the internal electrode 102 (FIG. 7).
- a connecting member 103 is provided on the upper middle side).
- the connecting member 103 is made of a metal such as tungsten (W).
- the substrate 101 is provided with a terminal hole 104 extending from the back surface side (upper side in the drawing) of the substrate 101 to the back surface of the connecting member 103.
- a part of the terminal 105 (external metal terminal) is inserted into the terminal hole 104, and the end portion of the terminal 105 and the connecting member 103 are connected by a brazing portion 106.
- the terminal 105 is made of, for example, nickel (Ni). With the above configuration, the terminal 105 and the internal electrode 102 are electrically connected.
- the surface side (lower side in the drawing) of the ceramic substrate 101 of the electrode embedded member 100 is placed on the electrode embedded member 100 incorporated in, for example, a semiconductor manufacturing apparatus (etching apparatus, CVD apparatus, etc.).
- An insulating layer for electrically insulating between the semiconductor wafer to be formed and the internal electrode 102 of the electrode embedded member 100 is formed.
- a crack 107 is generated inside the substrate 101 starting from the vicinity of the edge portion on the back side (upper side in the drawing) of the connecting member 103.
- the crack 107 may pass through the internal electrode 102 and reach the surface of the substrate 101 (the surface on which the semiconductor wafer or the like is placed).
- Cracks 107 are likely to occur starting from the vicinity of the edge on the back side (upper side in the figure) of the connecting member 103 because the progress of oxidation inside the electrode embedded member 100 is mainly on the surface side of the connecting member 103 (lower in the figure). It is considered that this is caused by proceeding from the back side (upper side in the figure) instead of the side).
- the surface side portion of the substrate 101 of the electrode embedded member 100 is between the substrate to be processed such as a semiconductor wafer placed on the electrode embedded member 100 and the internal electrode 102 of the electrode embedded member 100. Since an insulating layer is formed to electrically insulate the electrode, it is possible to prevent the occurrence of cracks inside the base 101 of the electrode embedding member 100, and in particular, the cracks penetrate the insulating layer and the mounting surface of the substrate to be treated. Must be prevented from reaching.
- a terminal (external connection terminal) 105 made of nickel (Ni) and a connecting member 103 made of tungsten (W) embedded in a substrate 101 made of aluminum nitride (AlN) are used. It was thought that the difference in linear expansion coefficient (coefficient of thermal expansion) between them was large, but especially when used for a long period of time, the connecting member 103 made of buried tungsten (W) and the surrounding AlN It was found that the effect due to the difference in the coefficient of linear expansion of was greater.
- the present invention is an electrode-embedded member in which an electrode is embedded inside a ceramic substrate, and an electrode-embedded member capable of suppressing or preventing cracks from occurring inside the substrate and manufacturing thereof.
- the purpose is to provide a method.
- the electrode-embedded member according to the present invention is Ceramic substrate and The electrodes embedded in the substrate and At least one of tungsten or molybdenum embedded in the substrate having one main surface and the other main surface, with the one main surface facing the electrode side and electrically connected to the electrode.
- the cushioning member comprises at least a ceramic material and at least one of tungsten and molybdenum.
- the cushioning member is characterized in that it covers at least a part of the edge portion of the connecting member.
- the coefficient of linear expansion (coefficient of thermal expansion) of the mixed structure constituting the buffer member is the coefficient of linear expansion of the material of the connecting member and the material of the substrate, respectively. Taking an intermediate value, the change (magnitude of difference) in the coefficient of linear expansion (coefficient of thermal expansion) between the members is alleviated. As a result, the stress concentrated on the edge of the connecting member can be relaxed, and as a result, the occurrence of cracks extending from the connecting member to the substrate can be suppressed or prevented.
- the cushioning member contains at least a ceramic material constituting the substrate and a conductive material containing at least one of tungsten and molybdenum as a constituent element.
- the electrode-embedded member of the present invention includes an external metal terminal connected to the connecting member with a part inserted into the hole.
- the internal electrode embedded inside the substrate can be electrically connected to the outside via the external metal terminal and the connecting member.
- the connecting member has an edge formed by a side surface connecting the one main surface and the other main surface, and the one main surface and the side surface. It is preferable that the cushioning member further includes a portion and covers the edge portion over the entire circumference. Thereby, cracks generated starting from the edge of the connecting member can be reliably suppressed or prevented.
- the method for manufacturing an electrode embedded member according to the present invention is: A method for manufacturing any of the above electrode embedded members.
- the cushioning member step of covering with the cushioning member A second molded body mounting step of mounting the second molded body on the first molded body, the electrode, the connecting member, and the cushioning member.
- the coefficient of linear expansion of the mixed structure constituting the buffer member takes an intermediate value between the coefficient of linear expansion of the material of the connecting member and the material of the substrate, and the change in the coefficient of linear expansion between the members (large difference).
- the coefficient is relaxed.
- the stress concentrated on the edge of the connecting member can be relaxed, and as a result, the occurrence of cracks extending from the connecting member to the substrate can be suppressed or prevented.
- the method for manufacturing an electrode embedded member according to the present invention is: A method for manufacturing any of the above electrode embedded members.
- a first pressure powder forming step in which a bottomed tubular shape having an opening is filled with a raw material powder made of ceramics and pressed to form a first pressure powder.
- an electrode mounting step of arranging the electrode and the connecting member on the opening side of the bottomed tubular mold of the first green powder.
- the first pressure powder, the electrode, and the opening side of the buffer member in the bottomed tubular mold are filled with the raw material powder and pressed to contain the first pressure powder.
- the second pressure powder forming step of forming powder and A sintering step in which the second green compact in which the electrode, the connecting member, and the cushioning member are embedded is pressure-fired. To be equipped.
- the coefficient of linear expansion of the mixed structure constituting the buffer member takes an intermediate value between the coefficient of linear expansion of the material of the connecting member and the material of the substrate, and the change in the coefficient of linear expansion between the members (large difference).
- the coefficient is relaxed.
- the stress concentrated on the edge of the connecting member can be relaxed, and as a result, the occurrence of cracks extending from the connecting member to the substrate can be suppressed or prevented.
- FIG. 1A is an explanatory view schematically showing a main part of an electrode embedded member as an embodiment of the present invention.
- FIG. 1B is an explanatory view schematically showing a main part of an electrode embedded member as an embodiment of the present invention.
- FIG. 2 is an enlarged explanatory view showing a connecting member and a cushioning member of the electrode-embedded member shown in FIGS. 1A and 1B in a state of being separated from each other.
- FIG. 3A is an explanatory view showing a method of manufacturing an electrode embedded member as an embodiment of the present invention.
- FIG. 3B is an explanatory diagram showing a method of manufacturing an electrode embedded member as an embodiment of the present invention.
- FIG. 1A is an explanatory view schematically showing a main part of an electrode embedded member as an embodiment of the present invention.
- FIG. 1B is an explanatory view schematically showing a main part of an electrode embedded member as an embodiment of the present invention.
- FIG. 2 is an enlarged explanatory view showing
- FIG. 4A is another explanatory view showing a method of manufacturing an electrode embedded member as an embodiment of the present invention.
- FIG. 4B is another explanatory view showing a method of manufacturing an electrode embedded member as an embodiment of the present invention.
- FIG. 5A is an explanatory view schematically showing a main part of an electrode embedded member as another embodiment of the present invention.
- FIG. 5B is an explanatory view schematically showing a main part of an electrode embedded member as another embodiment of the present invention.
- FIG. 6 is an explanatory view schematically showing a main part of an electrode embedded member as another embodiment of the present invention.
- FIG. 7 is an explanatory view schematically showing a main part of a conventional electrode embedded member.
- FIG. 5A is an explanatory view schematically showing a main part of an electrode embedded member as another embodiment of the present invention.
- FIG. 5B is an explanatory view schematically showing a main part of an electrode embedded member as another embodiment of the present invention.
- FIG. 6 is an explanatory view
- FIG. 8 is a perspective view schematically showing the external configuration of the electrostatic chuck 1000 according to the present embodiment.
- FIG. 9 is an explanatory view schematically showing the XZ cross-sectional configuration of the electrostatic chuck 1000 according to the present embodiment.
- FIG. 10 is a plan view of the ceramic structure.
- FIG. 11 is a cross-sectional view taken along the line AA of FIG.
- the electrode embedded member and the manufacturing method thereof as one embodiment of the present invention will be described with reference to the drawings.
- the drawing schematically shows the main part of the electrode-embedded member, particularly the connection point between the internal electrode and the external metal terminal.
- the electrode-embedded member of the present embodiment is used, for example, as a ceramic heater incorporated in a semiconductor manufacturing apparatus and heating a semiconductor manufacturing wafer, or as an electrostatic chuck that attracts a semiconductor manufacturing wafer by a Johnsen-Labeck force or a Coulomb force. ..
- the electrode-embedded member 1 has a front surface 2a and a back surface 2b, and includes a plate-shaped substrate 2 made of ceramics. Inside the substrate 2, an internal electrode 3 made of a metal material is embedded so as to extend parallel to the surface 2a of the substrate 2.
- the ceramic material constituting the substrate 2 include aluminum nitride (AlN) and aluminum oxide (Al 2 O 3 ).
- the metal material constituting the internal electrode 3 is typically molybdenum (Mo), and there are other alloys containing tungsten (W), tungsten and / or molybdenum as a main component.
- a disk-shaped connecting member 4 extending along the surface 2a of the substrate 2 is arranged.
- the connecting member 4 has one main surface 4a facing the side of the internal electrode 3 and the other main surface 4b facing the one main surface 4a.
- the connecting member 4 is electrically connected to the internal electrode 3.
- the material constituting the connecting member 4 the same material as the metal material constituting the internal electrode 3 described above can be used, but the material does not necessarily have to be the same as the internal electrode 3. That is, the material constituting the connecting member 4 may contain at least one of tungsten and molybdenum.
- the base body 2 is provided with a terminal hole (hole) 5 extending from the back surface (outer surface) 2b to reach the other main surface 4b of the connecting member 4 inside the base body 2.
- a part of the columnar terminal 6 is inserted into the terminal hole 5, and the end portion of the terminal 6 and the connecting member 4 are connected by a brazing portion 7.
- the brazing portion 7 is located between the intermediate member 7a of tungsten (W) embedded in the brazing material such as gold brazing represented by Au—Ni system and silver brazing represented by Ag—Cu system and Kovar.
- a member 7b is included.
- the diameter of the terminal hole 5 is, for example, 5 mm.
- the terminal 6 has, for example, a diameter of 4.8 mm and a length of 20 mm.
- a gap 9 is formed between the terminal 6 and the inner side surface 8 of the substrate 2 that defines the terminal hole 5.
- the width of the gap 9 is, for example, 0.1 mm.
- Nickel is typically mentioned as a metal material constituting the terminal (external metal terminal) 6, and there are other low thermal expansion metal alloys such as Kovar and / or titanium, copper or an alloy containing these as a main component. ..
- the columnar terminal 6 and the disk-shaped connecting member 4 are arranged and connected concentrically with each other, but the terminal 6 and the connecting member 4 are not necessarily arranged concentrically. It is not necessary and may deviate from the concentric position.
- the shape of the terminal 6 may be a rod shape other than a columnar shape.
- the brazing portion 7 may be in contact with a member around the brazing portion 7 (for example, a cushioning member 10).
- the terminal (external metal terminal) 6 and the internal electrode 3 embedded inside the substrate 2 are electrically connected.
- the shape of the connecting member 4 is not necessarily limited to a disk shape, and a suitable shape for electrically connecting the internal electrode 3 and the terminal 6 can be appropriately selected. Further, as a form for ensuring an electrical connection state between the internal electrode 3 and the connecting member 4, a form in which the two are in direct contact with each other, a form in which the two are adhered to each other using a conductive paste, or the like is used. Can be adopted.
- a cushioning member 10 that covers at least a part of the edge portion of the connecting member 4 is embedded inside the substrate 2.
- the buffer member 10 contains at least a ceramic material constituting the substrate 2 and a conductive material containing at least one of tungsten and molybdenum as a constituent element.
- the conductive material constituting the cushioning member 10 does not necessarily have to be the same as the material constituting the connecting member 4.
- the connecting member 4 is made of molybdenum
- the conductive material constituting the cushioning member 10 may be molybdenum or tungsten.
- the conductive material constituting the buffer member 10 may be a carbide of tungsten or a carbide of molybdenum, and in short, a material containing at least one of tungsten or molybdenum as a constituent element may be used.
- the connecting member 4 in the present embodiment has an edge formed by a side surface 4c connecting one main surface 4a and the other main surface 4b, and the main surfaces 4a and 4b and the side surface 4c. It has parts 4d and 4e.
- the cushioning member 10 covers the edge 4e on the other main surface 4b side of the disc-shaped connecting member 4 over the entire circumference thereof.
- the method for manufacturing the electrode embedded member 1 is roughly classified into a method using a molded body pressing method and a method using a powder hot pressing method.
- the molded body processed by this molded body pressing method also includes a degreased body and a calcined body.
- This manufacturing method includes a molded body forming step of forming a first molded body and a second molded body made of ceramics, and an electrode mounting step of mounting an internal electrode 3 and a connecting member 4 on the first molded body.
- the cushioning member step of covering at least a part of the edges 4d and 4e of the connecting member 4 with the cushioning member 10, and placing the second molded body on the first molded body, the internal electrode 3, the connecting member 4 and the cushioning member 10. It includes a second molded body mounting step and a sintering step in which the electrode 3, the connecting member 4, and the buffer member 10 are pressure-fired while being sandwiched between the first molded body and the second molded body. ..
- the cushioning member 10 in the buffering member step is formed by mixing at least a ceramic material constituting the first molded product and the second molded product and a conductive material containing at least one of tungsten and molybdenum as a constituent element.
- Cushioning member 10 can be, for example, tungsten (or molybdenum) and mainly of aluminum nitride (AlN), is formed by mixing a material obtained by adding a sintering aid such as Y 2 O 3 as required.
- More specific combinations of materials (composition ratio, etc.) of the mixed materials forming the buffer member 10 are as follows. (1) 50 vol% of mixed powder obtained by mixing 5 wt% Y 2 O 3 with AlN, and 50 vol% of tungsten powder. (2) 30 vol% of mixed powder obtained by mixing 5 wt% Y 2 O 3 with AlN, and 70 vol% of tungsten powder. (3) 90 vol% of mixed powder obtained by mixing 5 wt% Y 2 O 3 with AlN, and 10 vol% of tungsten powder. (4) 70 vol% of mixed powder obtained by mixing 5 wt% Y 2 O 3 with AlN, and 30 vol% of molybdenum powder.
- Step of preparing a plurality of AlN compacts A step of cutting out from a CIP body or the like by a conventional method and processing it into a predetermined shape In this step, i) First molded product (plate that becomes an insulating layer after firing) ii) Second molded body (plate that serves as a base after firing) To make.
- a step of placing the second degreasing body 21 on the degreasing body 21 and performing uniaxial pressure firing (hot pressing) (FIG. 3A).
- the first degreased body 20 and the second degreased body 21 are sintered, and the internal electrode 3, the connecting member 4, and the buffer member 10 are sintered and integrated.
- the diameter of the terminal hole 5 is smaller than the representative size (for example, diameter) of the connecting member 4.
- the electrode embedded member 1 shown in FIGS. 1A and 1B is manufactured by the series of steps (1) to (7) above.
- the number of internal electrodes 3 embedded in the substrate 2 of the electrode burying member 1 is not limited to one, and a plurality of internal electrodes 3 may be embedded in the substrate 2. In that case, a plurality of internal electrodes 3 can be embedded at different positions in the thickness direction of the substrate 2.
- the internal electrode 3 is further placed on the second degreasing body 21 in the step (5) above, and the connecting member 4 is placed at a predetermined position of the internal electrode 3. It can be manufactured by arranging the buffer member 10 and placing a degreased body of an AlN molded product separately prepared on the buffer member 10 and then performing uniaxial pressure firing (hot pressing).
- This manufacturing method includes a first pressure powder forming step in which a bottomed tubular mold having an opening is filled with a raw material powder made of ceramics and pressed to form a first pressure powder, and a bottomed tubular mold. , An electrode mounting step of arranging the internal electrode 3 and the connecting member 4 on the opening side of the bottomed tubular shape of the first green compact, and cushioning member at least a part of the edges 4d and 4e of the connecting member 4.
- the buffer member step covered with 10 and the first green compact, the internal electrode 3, and the opening side of the buffer member 10 in the bottomed tubular mold are filled with the raw material powder and pressed to contain the first green compact.
- the second green compact forming step of forming the second green compact and the sintering step of pressurizing and firing the second green compact in which the internal electrode 3, the connecting member 4, and the buffer member 10 are embedded are performed. Be prepared.
- the ceramic material constituting the first molded product and the second molded product and the conductive material having at least one of tungsten and molybdenum as a constituent element are mixed. It is formed.
- the internal electrodes 3 are embedded at different positions in the thickness direction of the substrate 2 by using the powder hot press method, the internal electrodes 3 are further placed on the second green compact, and the internal electrodes 3 are placed.
- the connecting member 4 and the buffering member 10 are arranged at the predetermined positions of 3 and filling the opening side of the bottomed tubular mold with the raw material powder and pressurizing it, the second powder and the internal electrode 3
- a third green compact in which the connecting member 4 and the buffer member 10 are embedded can be produced, and a sintering step can be performed in which the third green powder is pressure-fired.
- the electrode-embedded member and the method for manufacturing the electrode-embedded member as an embodiment of the present invention have been described above, but according to the above-described embodiment, the peculiar action and effect described below can be obtained.
- the cushioning member 10 is arranged around the connecting member 4, particularly over the entire circumference of the edge portion 4e on the other main surface 4b side.
- the buffer member 10 is composed of a mixed structure containing at least a ceramic material constituting the substrate 2 and a conductive material containing at least one of tungsten and molybdenum as a constituent element. Therefore, the mixed structure constituting the buffer member 10 has a coefficient of linear expansion that is intermediate between the coefficient of linear expansion of the material of the connecting member 4 and the material of the substrate 2 (ceramics such as AlN). Changes in the coefficient of linear expansion (magnitude of difference) between them are alleviated. As a result, the stress concentrated on the edge portion of the connecting member 4 can be relaxed, and as a result, the occurrence of cracks extending from the edge portion of the connecting member 4 to the substrate 2 can be suppressed or prevented.
- the cushioning member 10 arranged around the connecting member 4 is a conductive material (for example, tungsten (W)) in which at least one of the ceramic material constituting the substrate 2 and tungsten and molybdenum is a constituent element. ) -Since it has a mixed structure of AlN), the amount of minute irregularities generated at the interface between the buffer member 10 and the substrate 2 during the firing process or the like increases. As a result, a good bonding state is ensured between the buffer member 10 and the substrate 2, and the progress of oxidation inside the electrode embedded member 1 can be suppressed.
- tungsten for example, tungsten (W)
- FIGS. 5A and 5B The parts having the same configuration as the above-described embodiment shown in FIG. 1A and the like are designated by the same reference numerals in FIGS. 5A and 5B, and the parts different from the above-described embodiment will be described below.
- the end surface (the surface electrically connected to the internal electrode 3) on the internal electrode 3 side of the cushioning member 10 forms an annular shape extending around the connecting member 4.
- the entire annular end face of the cushioning member 10 is electrically connected to the back surface of the internal electrode 3.
- the end surface (the surface electrically connected to the internal electrode 3) of the cushioning member 10A on the internal electrode 3 side is a circle around the connecting member 4. It does not extend in a ring shape (continuously), but is formed intermittently (discontinuously) in the circumferential direction. That is, the electrical connection state between the buffer member 10A and the internal electrode 3 is intermittent (discontinuous) in the circumferential direction.
- a part of the ceramic substrate 2A is locally interposed between the buffer member 10A and the internal electrode 3.
- the edge 4e on the other main surface 4b side of the connecting member 4 can be covered over the entire circumference. In the vicinity of the edge portion 4e of the connecting member 4, the concentration of stress can be relaxed to suppress or prevent the occurrence of cracks.
- the other main surface 4b side of the connecting member 4 is arranged.
- the cushioning member may be arranged not only around the edge portion 4e of the connection member 4 but also around the edge portion 4d on the one main surface 4a side of the connecting member 4. By doing so, it is possible to suppress or prevent the occurrence of cracks in the vicinity of both edge portions 4d and 4e of the connecting member 4.
- the present invention is suitable for an electrode-embedded member 1 in which a high-frequency electrode, a ground electrode, and an internal electrode 3 as an electrode for electrostatic adsorption are embedded at a position close to the surface 2a of the substrate 2. Further, it is suitable for the electrode embedded member 1 in which the internal electrode 3 as a heater electrode is embedded separately from the internal electrode 3 embedded at a position close to the surface 2a of the substrate so that the electrode embedded member 1 can self-heat.
- an electrode is embedded in which two internal electrodes 3 as a high-frequency electrode and a heater electrode are embedded in the substrate 2 for the purpose of suppressing the generation of cracks inside the substrate 2 when used at a high temperature.
- the member 1 will be disclosed.
- Example 1A to 4B explain the process and structure of burying the internal electrode 3, the connecting member 4, and the cushioning member 10 as high-frequency electrodes to be embedded at a position close to the surface 2a of the substrate.
- the burying process and structure of the internal electrode 3 as the heater electrode and the connecting member 4 and the buffer member 10 provided corresponding thereto are the same as the burying process and structure of the internal electrode 3 as the high frequency electrode, and thus the illustration is omitted.
- various examples relating to the manufacturing method of the electrode embedded member 1 in which the two internal electrodes 3 as the high frequency electrode and the heater electrode are embedded will be described.
- the degreasing, firing, and brazing conditions described in the following examples shall be in accordance with the conventional method for producing a ceramic sintered body, and include changes in appropriate conditions.
- Example 1 First, as Example 1, an example in which the electrode embedded member 1 is manufactured by using the molded body pressing method will be described.
- a binder was added to a powder mixture consisting of 95% by mass of aluminum nitride powder and 5% by mass of yttrium oxide powder, and after granulation, CIP molding (pressure 1 ton / cm 2 ) was performed to obtain an ingot of the molded product.
- the following molded product was produced by machining.
- Disc-shaped molded body A (plate that becomes an insulating layer after firing) Diameter 340 mm, thickness 5 mm
- Disc-shaped molded body B (plate that serves as an intermediate base after firing) Diameter 340 mm, thickness 10 mm
- a recess having a diameter of 300 mm and a depth of 0.1 mm is provided on one surface of the disk-shaped molded body B so as to share the center of the molded body and accommodate the first internal electrode 3 (high frequency electrode). Further, a recess having a diameter of 12 mm and a depth of 1.5 mm for accommodating the connecting member 4 and the cushioning member 10 is provided at a predetermined position where the terminal is formed.
- Disc-shaped molded body C (plate that serves as a base after firing) Diameter 340 mm, thickness 20 mm
- a recess having a diameter of 300 mm and a depth of 0.1 mm for accommodating the second internal electrode 3 (heater electrode) is provided so as to share the center of the molded body.
- a recess having a diameter of 12 mm and a depth of 1.5 mm for accommodating the connecting member 4 and the cushioning member 10 is provided at a predetermined position where the terminal is formed.
- Disc-shaped degreased bodies A, B, and C are degreased to prepare disc-shaped degreased bodies A, B, and C. Degreasing is performed at 500 ° C. or higher in an air atmosphere.
- the disc-shaped degreasing body B is provided with the first internal electrode 3, the connecting member 4 and the cushioning member 10, and the disc-shaped degreasing body C is provided with the second internal electrode 3, the connecting member 4 and the cushioning member 10. It was decorated.
- Heater electrode and high-frequency electrode Molybdenum wire mesh (wire diameter 0.1 mm, plain weave, mesh size # 50) This is cut into a predetermined shape to form a heater electrode. The outermost diameter is 294 mm. A mesh made of the same molybdenum wire is cut into a circular shape to form a high-frequency electrode. The outermost diameter is 298 mm.
- Buffer member AlN raw material powder and W powder are mixed at a volume ratio of 50%: 50% and then molded, and counterbore processing with a diameter of 8 mm and a depth of 0.5 mm on a disk with a diameter of 12 mm and a thickness of 1.5 mm.
- a cushioning member is arranged in a recess of the disk-shaped degreasing body C having a diameter of 12 mm so that the counterbore hole faces upward.
- the connecting member is stored in the counterbore hole of the cushioning member.
- a heater electrode as a second internal electrode is housed therein in a recess having a diameter of 300 mm.
- a cushioning member is arranged in a recess of the disk-shaped degreasing body B having a diameter of 12 mm so that the counterbore hole faces upward.
- the connecting member is stored in the counterbore hole of the cushioning member.
- a high-frequency electrode as a first internal electrode is housed therein in a recess having a diameter of 300 mm.
- a disk-shaped degreasing body A is laminated on the disc-shaped degreasing body A to complete the laminated body (defatting body).
- the degreased body was transferred into a carbon mold, placed in a hot press furnace, and fired by hot press firing.
- Hot press firing was performed at a pressure of 10 MPa at a firing temperature of 1800 ° C. and a firing time of 2 hours.
- External metal terminal connection A vacuum furnace is provided with an intermediate member made of tungsten and Kovar with a diameter of 5 mm and a thickness of 1 mm and a cylindrical Ni power supply terminal with a diameter of 5 mm and a length of 30 mm installed on the bottom surface of the exposed connection member via a brazing material.
- the electrode-embedded member was completed by brazing with an Au—Ni brazing material at 1050 ° C.
- Example 2 Next, as Example 2, an example in which the same electrode embedded member 1 as in Example 1 is manufactured by using the powder hot press method will be described.
- a powder mixed raw material powder composed of 95% by mass of aluminum nitride powder and 5% by mass of yttrium oxide powder is filled in a bottomed carbon mold and uniaxially pressed to prepare a disc-shaped green compact 1.
- Disc-shaped green compact A plate that becomes an insulating layer after firing
- the same high-frequency electrode as in Example 1 is placed at a predetermined position on the disc-shaped green compact 1.
- Connecting member The same connecting member as in the first embodiment is arranged at a predetermined position on the high frequency electrode.
- Cushioning member The same cushioning member as in Example 1 is placed over the connecting member on the high frequency electrode.
- Hot press firing was performed at a pressure of 10 MPa at a firing temperature of 1800 ° C. and a firing time of 2 hours.
- External metal terminal connection A vacuum furnace is provided with an intermediate member made of tungsten and Kovar with a diameter of 5 mm and a thickness of 1 mm and a cylindrical Ni power supply terminal with a diameter of 5 mm and a length of 30 mm installed on the bottom surface of the exposed connection member via a brazing material.
- the electrode-embedded member was completed by brazing with an Au—Ni brazing material at 1050 ° C.
- Example 3 As Example 3, another example in which the electrode-embedded member 1 is manufactured by using the molded body pressing method will be described.
- the buffer member is formed by mixing AlN raw material powder and tungsten (W) powder at a volume ratio of 70%: 30%, and then forming a disk having a diameter of 12 mm and a thickness of 1.5 mm from one side to a diameter of 8 mm and a depth of 0.5 mm.
- the process was the same as in Example 1 except that a recessed member subjected to counterbore processing was prepared.
- Example 4 As Example 4, another example in which the electrode-embedded member 1 is manufactured by using the molded body pressing method will be described.
- the buffer member is formed by mixing AlN raw material powder and tungsten (W) powder at a volume ratio of 90%: 10%, and then forming a disk having a diameter of 12 mm and a thickness of 1.5 mm from one side to a diameter of 8 mm and a depth of 0.5 mm.
- the process was the same as in Example 1 except that a recessed member subjected to counterbore processing was prepared.
- Example 5 As Example 5, another example in which the electrode-embedded member 1 is manufactured by using the molded body pressing method will be described.
- the connecting member is a bulk body of molybdenum having a diameter of 8 mm and a thickness of 0.5 mm
- the buffer member is formed by mixing AlN raw material powder and molybdenum (Mo) powder at a volume ratio of 70%: 30% and then molding to have a diameter of 12 mm.
- the process was the same as in Example 1 except that a concave member having a diameter of 8 mm and a depth of 0.5 mm was subjected to counterbore processing on a disk having a thickness of 1.5 mm from one side.
- Example 1 the electrode-embedded member was produced by a conventional manufacturing method in which the cushioning member was not arranged around the connecting member and the cushioning member was not included.
- FIG. 8 is a perspective view schematically showing the external configuration of the electrostatic chuck 1000 in the present embodiment
- FIG. 9 is an explanatory view schematically showing the XZ cross-sectional configuration of the electrostatic chuck 1000 in the present embodiment.
- .. 8 and 9 show XYZ axes that are orthogonal to each other to identify the direction.
- the Z-axis positive direction is referred to as an upward direction
- the Z-axis negative direction is referred to as a downward direction
- the electrostatic chuck 1000 is actually installed in a direction different from such a direction. May be done.
- the electrostatic chuck 1000 is a device that attracts and holds an object (for example, a wafer 1500) by electrostatic attraction, and is used, for example, for fixing a wafer 1500 in a vacuum chamber of a semiconductor manufacturing apparatus.
- the electrostatic chuck 1000 includes ceramic plates 1010 and base plates 1020 arranged side by side in a predetermined arrangement direction (vertical direction (Z-axis direction in this embodiment)).
- the lower surface of the ceramic plate 1010 hereinafter referred to as "ceramic side adhesive surface S2"
- base side adhesive surface S3 the upper surface of the base plate 1020
- the electrostatic chuck 1000 further includes an adhesive layer 1030 arranged between the ceramic-side adhesive surface S2 of the ceramic plate 1010 and the base-side adhesive surface S3 of the base plate 1020.
- the ceramic plate 1010 is, for example, a circular flat plate-shaped member, and is made of ceramics.
- the diameter of the ceramic plate 1010 is, for example, about 50 mm to 500 mm (usually about 200 mm to 350 mm), and the thickness of the ceramic plate 1010 is, for example, about 2 mm to 10 mm.
- Various ceramics can be used as the forming material of the ceramic plate 1010. From the viewpoints of strength, abrasion resistance, plasma resistance, and the relationship with the forming material of the base plate 1020 described later, for example, aluminum oxide (alumina) is used. , Al 2 O 3 ) or aluminum nitride (AlN) as a main component is preferably used.
- the main component referred to here means the component having the highest content ratio (weight ratio).
- a pair of internal electrodes 1040 formed of a conductive material for example, tungsten, molybdenum, etc.
- a voltage is applied to the pair of internal electrodes 1040 from a power source (not shown)
- an electrostatic attraction is generated, and the wafer 1500 is transferred to the upper surface of the ceramic plate 1010 (hereinafter referred to as “adsorption surface S1”) by this electrostatic attraction. It is adsorbed and fixed to.
- a heater 1050 composed of a resistance heating element formed of a conductive material (for example, tungsten, molybdenum, etc.) is provided inside the ceramic plate 1010.
- a voltage is applied to the heater 1050 from a power source (not shown)
- the heater 1050 generates heat to heat the ceramic plate 1010, and the wafer 1500 held on the suction surface S1 of the ceramic plate 1010 is heated.
- the heater 1050 is arranged substantially concentrically in the Z direction, for example, in order to heat the suction surface S1 of the ceramic plate 1010 as evenly as possible.
- the base plate 1020 is, for example, a circular flat plate-shaped member having the same diameter as the ceramic plate 1010 or having a diameter larger than that of the ceramic plate 1010, and is formed of a composite material composed of ceramics and an aluminum alloy.
- the diameter of the base plate 1020 is, for example, about 220 mm to 550 mm (usually about 220 mm to 350 mm), and the thickness of the base plate 1020 is, for example, about 20 mm to 40 mm.
- a metal or various composite materials can be used as a material for forming the base plate 1020.
- the metal Al (aluminum) or Ti (titanium) is preferably used.
- the composite material it is preferable to use a composite material in which an aluminum alloy containing aluminum as a main component is melted and pressure-permeated into a porous ceramic containing silicon carbide (SiC) as a main component.
- the aluminum alloy contained in the composite material may contain Si (silicon) or Mg (magnesium), or may contain other elements as long as the properties are not affected.
- a refrigerant flow path 1021 is formed inside the base plate 1020.
- a refrigerant for example, a fluorine-based inert liquid, water, etc.
- the base plate 1020 is cooled, and heat is transferred between the base plate 1020 and the ceramic plate 1010 via the adhesive layer 1030.
- the ceramic plate 1010 is cooled, and the wafer 1500 held on the suction surface S1 of the ceramic plate 1010 is cooled. As a result, temperature control of the wafer 1500 is realized.
- the adhesive layer 1030 adheres the ceramic plate 1010 and the base plate 1020.
- the thickness of the adhesive layer 1030 is, for example, about 0.03 mm to 1 mm.
- FIG. 10 is a plan view of the ceramic heater 2000 of the embodiment.
- FIG. 11 is a cross-sectional view taken along the line AA of FIG.
- the base material 2020 has a disk shape.
- One surface of the base material 2020 is a substrate mounting surface 2020S.
- As the material of the ceramic sintered body forming the base material 2020 in addition to the above-mentioned aluminum nitride, silicon nitride, sialon, silicon carbide, boron nitride, alumina and the like can also be used.
- the substrate SB (indicated by a broken line in FIG. 11) is placed in contact with the substrate mounting surface 2020S.
- a board mounting area SR is provided inside a circle centered on the center point C of the board mounting surface 2020S.
- the shaft 2011 as a support is a cylindrical hollow shaft member.
- the shaft 2011 is made of, for example, a ceramic sintered body such as alumina (Al 2 O 3 ), aluminum nitride (Al N) or silicon nitride (Si 3 N 4 ).
- the shaft 2011 is provided with a flange portion 2011F at one end in the axial direction.
- the shaft 2011 is attached to the lower surface 2021 which is the main surface of the base material 2020 at one end where the flange portion 2011F is formed.
- the shaft 2011 is attached to the base material 2020 by solid-phase bonding between the lower surface 2021 of the base material 2020 and the surface of the flange portion 2011F.
- the electrode 2030 as a metal electrode layer is a heat generating resistor embedded in the base material 2020.
- the power feeding rod 2040 as a metal terminal is electrically connected to the electrode 2030 at one end thereof. Further, the power feeding rod 2040 is connected to a power source (not shown) at the other end. That is, electric power from the power source is supplied to the electrode 2030 via the feeding rod 2040.
- the electrode 2030 is a heating element that generates heat by supplying this electric power, thereby heating the entire base material 2020.
- a plurality of feeding rods 2040 are electrically connected to the electrode 2030.
- the electrode 2030 is embedded so as to extend over the substrate mounting area SR when viewed from a direction perpendicular to the substrate mounting surface 2020S. Further, the electrode 2030 has, for example, a mesh shape when viewed from a direction perpendicular to the substrate mounting surface 2020S.
- the electrode 2030 is made of a metal material such as molybdenum.
- the power feeding rod 2040 is formed in a columnar shape in which the hollow portion of the shaft 2011 extends in the axial direction of the shaft 2011 and one end portion extends into the base material 2020.
- Nickel (Ni) or the like can be used as the material of the power feeding rod 2040.
- the shape of the feeding rod 2040 may be, for example, a polygonal column or a truncated cone as long as it is columnar.
- Electrode embedded member 2 2A Base body 3 Internal electrode 4 Connecting member 4a, 4b Main surface of connecting member 4d, 4e Edge of connecting member 5 Terminal hole 6 Terminal (external metal terminal) 7 Brazing parts 7a, 7b Intermediate members 10, 10A Buffer member 20 First degreasing body 21 Second degreasing body
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Abstract
Description
この点について、従来の電極埋設部材の接続部材及びその周辺の部分を拡大して示した図7を参照して説明する。
セラミックス製の基体と、
前記基体に埋設された電極と、
一方の主面及び他方の主面を有し、前記一方の主面が前記電極側を向き、且つ前記電極と電気的に接続された状態で前記基体に埋設されたタングステン又はモリブデンの少なくとも一方を含む接続部材と、
前記基体の外面から前記接続部材の他方の主面まで延びる穴部と、
を備える電極埋設部材であって、
前記基体には緩衝部材が埋設され、
前記緩衝部材は、少なくともセラミックス材料とタングステン及びモリブデンの少なくとも一方とを含み、
且つ前記緩衝部材は、前記接続部材の縁部の少なくとも一部を覆うことを特徴とする。
これにより、基体内部に埋設された内部電極を、外部金属端子及び接続部材を介して外部と電気的に接続することができる。
これにより、接続部材の縁部を起点として発生するクラックを確実に抑制し又は防止することができる。
上記何れかの電極埋設部材の製造方法であって、
セラミックス製の第1成形体及び第2成形体を形成する成形体形成工程と、
前記第1成形体の上に前記電極と前記接続部材とを載置する電極載置工程と、
前記接続部材の縁部の少なくとも一部を、少なくとも前記第1成形体及び前記第2成形体を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを混合させて形成された前記緩衝部材によって覆う緩衝部材工程と、
前記第1成形体、前記電極、前記接続部材及び前記緩衝部材の上に前記第2成形体を載せる第2成形体載置工程と、
前記電極、前記接続部材、及び前記緩衝部材、を前記第1成形体と前記第2成形体とで挟んだ状態で加圧焼成する焼結工程と、
を備える。
上記何れかの電極埋設部材の製造方法であって、
開口を有する有底筒状型にセラミックス製の原料粉を充填して加圧し第1圧粉体を形成する第1圧粉体形成工程と、
前記有底筒状型の中で、前記第1圧粉体の前記有底筒状型の開口側に、前記電極と前記接続部材とを配置する電極載置工程と、
前記接続部材の縁部の少なくとも一部を、少なくとも前記原料粉を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを混合させて形成された前記緩衝部材によって覆う緩衝部材工程と、
前記有底筒状型の中の、前記第1圧粉体、前記電極、及び前記緩衝部材の前記開口側に前記原料粉を充填して加圧し前記第1圧粉体を含んだ第2圧粉体を形成する第2圧粉体形成工程と、
前記電極、前記接続部材、及び前記緩衝部材、を埋設した前記第2圧粉体を加圧焼成する焼結工程と、
を備える。
(1)AlNに5wt%Y2O3を混合した混合粉末が50vol%、タングステン粉末が50vol%
(2)AlNに5wt%Y2O3を混合した混合粉末が30vol%、タングステン粉末が70vol%
(3)AlNに5wt%Y2O3を混合した混合粉末が90vol%、タングステン粉末が10vol%
(4)AlNに5wt%Y2O3を混合した混合粉末が70vol%、モリブデン粉末が30vol%
従前の方法でCIP体などから切り出して、所定の形状に加工する工程
この工程において、
i)第1成形体(焼成後絶縁層となるプレート)
ii)第2成形体(焼成後に基台となるプレート)
を作製する。
ここで、第1脱脂体20及び第2脱脂体21が焼結し、内部電極3、接続部材4及び緩衝部材10が焼結一体化する。
ここで、端子穴5の直径は、接続部材4の代表寸法(例えば直径)より小さいことがより望ましい。
この製造方法は、開口を有する有底筒状型にセラミックス製の原料粉を充填して加圧し第1圧粉体を形成する第1圧粉体形成工程と、有底筒状型の中で、第1圧粉体の有底筒状型の開口側に、内部電極3と接続部材4とを配置する電極載置工程と、接続部材4の縁部4d、4eの少なくとも一部を緩衝部材10によって覆う緩衝部材工程と、有底筒状型の中の、第1圧粉体、内部電極3、及び緩衝部材10の開口側に原料粉を充填して加圧し第1圧粉体を含んだ第2圧粉体を形成する第2圧粉体形成工程と、内部電極3、接続部材4、及び緩衝部材10、を埋設した第2圧粉体を加圧焼成する焼結工程と、を備える。
図1A乃至図4Bは、基体の表面2aに近い位置に埋設される高周波電極としての内部電極3、接続部材4、及び緩衝部材10の埋設工程及び構造を説明したものである。ヒーター電極としての内部電極3とこれに対応して設けられる接続部材4及び緩衝部材10の埋設工程及び構造は、高周波電極としての内部電極3の埋設工程及び構造に準じるため図示は省略するが、以下には高周波電極及びヒーター電極としての2つの内部電極3が埋設された電極埋設部材1の製造方法に関する各種の実施例について説明する。
また、下記の実施例に記載の脱脂、焼成、ロウ付けの条件は従前のセラミックス焼結体の製造方法に準拠し、適切な条件の変更を含むものとする。
まず、実施例1として、成形体プレス法を用いて電極埋設部材1を製造した例について説明する。
(i)円板状成形体A(焼成後絶縁層となるプレート)
直径340mm、厚み5mm
(ii)円板状成形体B(焼成後に中間基台となるプレート)
直径340mm、厚み10mm
円板状成形体Bの一方の面に、成形体の中心を共有し、第1の内部電極3(高周波電極)を収納するための直径300mm、深さ0.1mmの凹部を設ける。
更に、端子を形成する所定の位置に、接続部材4及び緩衝部材10を収納するための直径12mm、深さ1.5mmの凹部を設ける。
(iii)円板状成形体C(焼成後に基台となるプレート)
直径340mm、厚み20mm
円板状成形体Cの一方の面に、成形体の中心を共有し、第2の内部電極3(ヒーター電極)を収納するための直径300mm、深さ0.1mmの凹部を設ける。
更に、端子を形成する所定の位置に、接続部材4及び緩衝部材10を収納するための直径12mm、深さ1.5mmの凹部を設ける。
脱脂は500℃以上、大気雰囲気で行う。
(iii)ヒーター電極及び高周波電極
モリブデンワイヤーによるメッシュ(線径0.1mm、平織り、メッシュサイズ#50)
これを所定の形状に裁断しヒーター電極とする。最外径294mm。
同じモリブデンワイヤーによるメッシュから円形形状に裁断し高周波電極とする。最
外径298mm。
(iv)接続部材
直径8mm厚み0.5mmのタングステンのバルク体とする。
(iv)緩衝部材
AlN原料粉とWの粉末を体積比50%:50%で混合した後に成形し、直径12mm厚み1.5mmの円板に片面から直径8mm、深さ0.5mmのザグリ加工を施した凹部状部材を準備する。
(v)ヒーター電極等の配置
円板状脱脂体Cの直径12mmの凹部に緩衝部材をザグリ穴が上方になる向きに配置する。
緩衝部材のザグリ穴に接続部材を収納する。
その上に、直径300mmの凹部に第2の内部電極としてのヒーター電極を収納する。
(vi)円板状脱脂体Bの積層
円板状脱脂体Cのヒーター電極が埋設された側に、円板状脱脂体2を積層する。
(vii)高周波電極等の配置
円板状脱脂体Bの直径12mmの凹部に緩衝部材をザグリ穴が上方になる向きに配置する。
緩衝部材のザグリ穴に接続部材を収納する。
その上に、直径300mmの凹部に第1の内部電極としての高周波電極を収納する。
その上に円板状脱脂体Aを積層し、積層体(脱脂体)を完成させる。
10MPaの圧力で、焼成温度1800℃、焼成時間2時間でホットプレス焼成を行った。
その後、全面に研削、研磨加工を行い、総厚25mm、絶縁層厚さ1.0mm、表面粗さをRa0.4μmのウェハ載置面を形成した。
セラミック基体裏面側より端子位置に接続部材に到達するまで穴径φ5.5mmの平底穴加工を行う。
露出した接続部材底面にロウ材を介して直径5mm、厚み1mmのタングステンとコバール製の中間部材と直径5mm長さ30mmの円柱状Ni製給電端子を設置し、真空炉により1050℃でAu-Ni系ロウ材によるロウ付けを行い電極埋設部材を完成させた。
次に、実施例2として、粉末ホットプレス法を用いて実施例1と同様の電極埋設部材1を製造した例について説明する。
(i)円板状圧粉体A(焼成後絶縁層となるプレート)
直径340mm、厚み5mm。
(ii)実施例1と同じ高周波電極を円板状圧粉体1上の所定位置に載置する。
(iii)接続部材
実施例1と同じ接続部材を高周波電極上の所定の位置に配置する。
(iv)緩衝部材
実施例1と同じ緩衝部材を高周波電極上の接続部材に被せて配置する。
直径340mm、厚み10mm
(v)ヒーター電極を円板状圧粉体B上に載せる。
(vi)接続部材
実施例1と同じ接続部材をヒーター電極上の所定の位置に配置する。
(vii)緩衝部材
実施例1と同じ緩衝部材をヒーター電極上の接続部材に被せる。
(viii)円板状圧粉体C(焼成後に基台となるプレート)
直径340mm、厚み20mm
10MPaの圧力で、焼成温度1800℃、焼成時間2時間でホットプレス焼成を行った。
その後、全面に研削、研磨加工を行い、総厚25mm、絶縁層厚さ1.0mm、表面粗さをRa0.4μmのウェハ載置面を形成した。
セラミック基体裏面側より端子位置に接続部材に到達するまで穴径φ5.5mmの平底穴加工を行う。
露出した接続部材底面にロウ材を介して直径5mm、厚み1mmのタングステンとコバール製の中間部材と直径5mm長さ30mmの円柱状Ni製給電端子を設置し、真空炉により1050℃でAu-Ni系ロウ材によるロウ付けを行い電極埋設部材を完成させた。
次に、実施例3として、成形体プレス法を用いて電極埋設部材1を製造した別の例について説明する。
緩衝部材をAlN原料粉とタングステン(W)の粉末を体積比70%:30%で混合した後に成形し、直径12mm、厚み1.5mmの円板に片面から直径8mm、深さ0.5mmのザグリ加工を施した凹部状部材を準備することとしたこと以外は実施例1と同じ工程とした。
次に、実施例4として、成形体プレス法を用いて電極埋設部材1を製造した別の例について説明する。
緩衝部材をAlN原料粉とタングステン(W)の粉末を体積比90%:10%で混合した後に成形し、直径12mm、厚み1.5mmの円板に片面から直径8mm、深さ0.5mmのザグリ加工を施した凹部状部材を準備することとしたこと以外は実施例1と同じ工程とした。
次に、実施例5として、成形体プレス法を用いて電極埋設部材1を製造した別の例について説明する。
接続部材が直径8mm、厚み0.5mmのモリブデンのバルク体とすること、及び緩衝部材をAlN原料粉とモリブデン(Mo)の粉末を体積比70%:30%で混合した後に成形し、直径12mm、厚み1.5mmの円板に片面から直径8mm、深さ0.5mmのザグリ加工を施した凹部状部材を準備することとしたこと以外は実施例1と同じ工程とした。
次に、上記実施例に対する比較例について説明する。
本比較例においては、上述の実施例1において、緩衝部材を接続部材の周囲に配置せず、緩衝部材を含まない従来の製法による電極埋設部材を作製した。
実施例1~5及び比較例で作製した電極埋設部材を用いて、プロセス温度が600℃である半導体製造プロセスに使用した。
A-1.静電チャック1000の構成:
図8は、本実施形態における静電チャック1000の外観構成を概略的に示す斜視図であり、図9は、本実施形態における静電チャック1000のXZ断面構成を概略的に示す説明図である。図8及び図9には、方向を特定するための互いに直交するXYZ軸が示されている。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、静電チャック1000は実際にはそのような向きとは異なる向きで設置されてもよい。
図10は、実施例のセラミックスヒータ2000の平面図である。図11は、図10のA-A線に沿った断面図である。
2、2A 基体
3 内部電極
4 接続部材
4a、4b 接続部材の主面
4d、4e 接続部材の縁部
5 端子穴
6 端子(外部金属端子)
7 ロウ付け部
7a、7b 中間部材
10、10A 緩衝部材
20 第1脱脂体
21 第2脱脂体
Claims (11)
- セラミックス製の基体と、
前記基体に埋設された電極と、
一方の主面及び他方の主面を有し、前記一方の主面が前記電極側を向き、且つ前記電極と電気的に接続された状態で前記基体に埋設されたタングステン又はモリブデンの少なくとも一方を含む接続部材と、
前記基体の外面から前記接続部材の他方の主面まで延びる穴部と、
を備える電極埋設部材であって、
前記基体には緩衝部材が埋設され、
前記緩衝部材は、少なくともセラミックス材料とタングステン及びモリブデンの少なくとも一方とを含み、
且つ前記緩衝部材は、前記接続部材の縁部の少なくとも一部を覆うことを特徴とする電極埋設部材。 - 請求項1記載の電極埋設部材であって、
前記緩衝部材は、少なくとも前記基体を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを含むことを特徴とする電極埋設部材。 - 請求項1記載の電極埋設部材であって、
前記穴部に一部が挿入された状態で前記接続部材に接続された外部金属端子を備えることを特徴とする電極埋設部材。 - 請求項3記載の電極埋設部材であって、
前記接続部材は、前記一方の主面と前記他方の主面とを接続する側面と、前記一方の主面と前記側面とによって形成される縁部とをさらに備え、
前記緩衝部材は、前記縁部を全周に亘って覆うことを特徴とする電極埋設部材。 - 請求項1記載の電極埋設部材であって、
前記接続部材は、前記一方の主面と前記他方の主面とを接続する側面と、前記一方の主面と前記側面とによって形成される縁部とをさらに備え、
前記緩衝部材は、前記縁部を全周に亘って覆うことを特徴とする電極埋設部材。 - 請求項4に記載の電極埋設部材の製造方法であって、
セラミックス製の第1成形体及び第2成形体を形成する成形体形成工程と、
前記第1成形体の上に前記電極と前記接続部材とを載置する電極載置工程と、
前記接続部材の縁部の少なくとも一部を、少なくとも前記第1成形体及び前記第2成形体を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを混合させて形成された前記緩衝部材によって覆う緩衝部材工程と、
前記第1成形体、前記電極、前記接続部材及び前記緩衝部材の上に前記第2成形体を載せる第2成形体載置工程と、
前記電極、前記接続部材、及び前記緩衝部材、を前記第1成形体と前記第2成形体とで挟んだ状態で加圧焼成する焼結工程と、
を備える電極埋設部材の製造方法。 - 請求項1に記載の電極埋設部材の製造方法であって、
セラミックス製の第1成形体及び第2成形体を形成する成形体形成工程と、
前記第1成形体の上に前記電極と前記接続部材とを載置する電極載置工程と、
前記接続部材の縁部の少なくとも一部を、少なくとも前記第1成形体及び前記第2成形体を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを混合させて形成された前記緩衝部材によって覆う緩衝部材工程と、
前記第1成形体、前記電極、前記接続部材及び前記緩衝部材の上に前記第2成形体を載せる第2成形体載置工程と、
前記電極、前記接続部材、及び前記緩衝部材、を前記第1成形体と前記第2成形体とで挟んだ状態で加圧焼成する焼結工程と、
を備える電極埋設部材の製造方法。 - 請求項4に記載の電極埋設部材の製造方法であって、
開口を有する有底筒状型にセラミックス製の原料粉を充填して加圧し第1圧粉体を形成する第1圧粉体形成工程と、
前記有底筒状型の中で、前記第1圧粉体の前記有底筒状型の開口側に、前記電極と前記接続部材とを配置する電極載置工程と、
前記接続部材の縁部の少なくとも一部を、少なくとも前記原料粉を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを混合させて形成された前記緩衝部材によって覆う緩衝部材工程と、
前記有底筒状型の中の、前記第1圧粉体、前記電極、及び前記緩衝部材の前記開口側に前記原料粉を充填して加圧し前記第1圧粉体を含んだ第2圧粉体を形成する第2圧粉体形成工程と、
前記電極、前記接続部材、及び前記緩衝部材、を埋設した前記第2圧粉体を加圧焼成する焼結工程と、
を備える電極埋設部材の製造方法。 - 請求項1に記載の電極埋設部材の製造方法であって、
開口を有する有底筒状型にセラミックス製の原料粉を充填して加圧し第1圧粉体を形成する第1圧粉体形成工程と、
前記有底筒状型の中で、前記第1圧粉体の前記有底筒状型の開口側に、前記電極と前記接続部材とを配置する電極載置工程と、
前記接続部材の縁部の少なくとも一部を、少なくとも前記原料粉を構成するセラミックス材料とタングステン及びモリブデンの少なくとも一方を構成元素とする導電性材料とを混合させて形成された前記緩衝部材によって覆う緩衝部材工程と、
前記有底筒状型の中の、前記第1圧粉体、前記電極、及び前記緩衝部材の前記開口側に前記原料粉を充填して加圧し前記第1圧粉体を含んだ第2圧粉体を形成する第2圧粉体形成工程と、
前記電極、前記接続部材、及び前記緩衝部材、を埋設した前記第2圧粉体を加圧焼成する焼結工程と、
を備える電極埋設部材の製造方法。 - 請求項1に記載の電極埋設部材は静電チャックであることを特徴とする静電チャック。
- 請求項1に記載の電極埋設部材はセラミックス製ヒーターであることを特徴とするセラミックス製ヒーター。
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KR1020217023398A KR102527439B1 (ko) | 2019-03-26 | 2020-03-19 | 전극 매설 부재 및 그 제조 방법, 정전 척, 세라믹스제 히터 |
US17/416,127 US11869796B2 (en) | 2019-03-26 | 2020-03-19 | Electrode-embedded member and method for manufacturing same, electrostatic chuck, and ceramic heater |
CN202080007096.8A CN113196870B (zh) | 2019-03-26 | 2020-03-19 | 电极埋设构件和其制造方法、静电卡盘、陶瓷制加热器 |
JP2020537785A JP6966651B2 (ja) | 2019-03-26 | 2020-03-19 | 電極埋設部材及びその製造方法、静電チャック、セラミックス製ヒーター |
TW109109926A TWI772767B (zh) | 2019-03-26 | 2020-03-25 | 電極埋設構件及其製造方法、靜電夾、陶瓷製加熱器 |
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Citations (5)
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JPH1112053A (ja) * | 1997-06-20 | 1999-01-19 | Ngk Insulators Ltd | セラミックスの接合構造およびその製造方法 |
JP2001010873A (ja) * | 1999-06-25 | 2001-01-16 | Ngk Insulators Ltd | 異種部材の接合方法、および同接合方法により接合された複合部材 |
JP2003124299A (ja) * | 2001-10-17 | 2003-04-25 | Sumitomo Osaka Cement Co Ltd | 電極内蔵型サセプタ及びその製造方法 |
JP2008130609A (ja) * | 2006-11-16 | 2008-06-05 | Ngk Insulators Ltd | 加熱装置 |
JP2018016536A (ja) * | 2016-07-29 | 2018-02-01 | 日本特殊陶業株式会社 | セラミックス部材 |
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JP3776499B2 (ja) | 1996-02-29 | 2006-05-17 | 日本碍子株式会社 | 金属部材とセラミックス部材との接合構造およびその製造方法 |
JP2001253777A (ja) * | 2000-03-13 | 2001-09-18 | Ibiden Co Ltd | セラミック基板 |
JP3618640B2 (ja) * | 2000-06-15 | 2005-02-09 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
JP4467453B2 (ja) * | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | セラミックス部材及びその製造方法 |
US7696455B2 (en) * | 2006-05-03 | 2010-04-13 | Watlow Electric Manufacturing Company | Power terminals for ceramic heater and method of making the same |
JP2008012053A (ja) | 2006-07-05 | 2008-01-24 | Juki Corp | ミシン |
US8908349B2 (en) * | 2011-03-31 | 2014-12-09 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus |
JP6428456B2 (ja) | 2014-04-09 | 2018-11-28 | 住友大阪セメント株式会社 | 静電チャック装置 |
KR101861469B1 (ko) * | 2014-04-30 | 2018-05-28 | 엔지케이 인슐레이터 엘티디 | 세라믹스 부재와 금속 부재의 접합체 및 그 제법 |
JP6475031B2 (ja) | 2015-02-03 | 2019-02-27 | 日本特殊陶業株式会社 | 静電チャック |
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- 2020-03-19 WO PCT/JP2020/012499 patent/WO2020196339A1/ja active Application Filing
- 2020-03-19 CN CN202080007096.8A patent/CN113196870B/zh active Active
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- 2020-03-19 KR KR1020217023398A patent/KR102527439B1/ko active IP Right Grant
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Patent Citations (5)
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JPH1112053A (ja) * | 1997-06-20 | 1999-01-19 | Ngk Insulators Ltd | セラミックスの接合構造およびその製造方法 |
JP2001010873A (ja) * | 1999-06-25 | 2001-01-16 | Ngk Insulators Ltd | 異種部材の接合方法、および同接合方法により接合された複合部材 |
JP2003124299A (ja) * | 2001-10-17 | 2003-04-25 | Sumitomo Osaka Cement Co Ltd | 電極内蔵型サセプタ及びその製造方法 |
JP2008130609A (ja) * | 2006-11-16 | 2008-06-05 | Ngk Insulators Ltd | 加熱装置 |
JP2018016536A (ja) * | 2016-07-29 | 2018-02-01 | 日本特殊陶業株式会社 | セラミックス部材 |
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TW202106105A (zh) | 2021-02-01 |
JPWO2020196339A1 (ja) | 2021-04-08 |
US11869796B2 (en) | 2024-01-09 |
KR102527439B1 (ko) | 2023-04-28 |
CN113196870B (zh) | 2023-09-29 |
US20220102180A1 (en) | 2022-03-31 |
CN113196870A (zh) | 2021-07-30 |
TWI772767B (zh) | 2022-08-01 |
JP6966651B2 (ja) | 2021-11-17 |
KR20210107085A (ko) | 2021-08-31 |
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