JP7507019B2 - 窒化アルミニウム焼結体、その製造方法、および窒化アルミニウム焼結体を用いた半導体製造装置用部品 - Google Patents
窒化アルミニウム焼結体、その製造方法、および窒化アルミニウム焼結体を用いた半導体製造装置用部品 Download PDFInfo
- Publication number
- JP7507019B2 JP7507019B2 JP2020117613A JP2020117613A JP7507019B2 JP 7507019 B2 JP7507019 B2 JP 7507019B2 JP 2020117613 A JP2020117613 A JP 2020117613A JP 2020117613 A JP2020117613 A JP 2020117613A JP 7507019 B2 JP7507019 B2 JP 7507019B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- sintered body
- nitride sintered
- semiconductor manufacturing
- manufacturing equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000000919 ceramic Substances 0.000 claims description 37
- 230000005284 excitation Effects 0.000 claims description 8
- 238000000103 photoluminescence spectrum Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 15
- 239000000843 powder Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- -1 sialon Chemical compound 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
Description
半導体製造装置に用いられる窒化アルミニウム焼結体であって、
前記窒化アルミニウム焼結体の250nmの波長の励起光によるフォトルミネッセンススペクトルの350~700nmの波長範囲において、前記窒化アルミニウム焼結体による最高発光強度ピークが580nm~620nmの波長範囲に出現することを特徴とする。
A-1.静電チャック1000の構成:
図2は、本実施形態における静電チャック1000の外観構成を概略的に示す斜視図であり、図3は、本実施形態における静電チャック1000のXZ断面構成を概略的に示す説明図である。図2及び図3には、方向を特定するための互いに直交するXYZ軸が示されている。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、静電チャック1000は実際にはそのような向きとは異なる向きで設置されてもよい。
図4は、実施例のセラミックスヒータ2000の平面図である。図5は、図4のA-A線に沿った断面図である。
Claims (3)
- 半導体製造装置に用いられる窒化アルミニウム焼結体であって、
前記窒化アルミニウム焼結体の250nmの波長の励起光によるフォトルミネッセンススペクトルの350nm~700nmの波長範囲において、前記窒化アルミニウム焼結体による最高発光強度ピークが580nm~620nmの波長範囲に出現することを特徴とする窒化アルミニウム焼結体。 - 請求項1に記載の窒化アルミニウム焼結体を用いた半導体製造装置用部品。
- 前記半導体製造装置は、静電チャック、セラミックヒータ、またはサセプタであることを特徴とする請求項2に記載の半導体製造装置用部品。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109124202A TWI808331B (zh) | 2019-07-18 | 2020-07-17 | 氮化鋁燒結體、其製造方法、及使用氮化鋁燒結體之半導體製造裝置用零件 |
KR1020200088816A KR20210010399A (ko) | 2019-07-18 | 2020-07-17 | 질화알루미늄 소결체, 그 제조 방법, 및 질화알루미늄 소결체를 사용한 반도체 제조 장치용 부품 |
US16/932,109 US11325866B2 (en) | 2019-07-18 | 2020-07-17 | Aluminum nitride sintered body, method of making the same, and semiconductor manufacturing equipment component using aluminum nitride sintered body |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019132906 | 2019-07-18 | ||
JP2019132906 | 2019-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021017396A JP2021017396A (ja) | 2021-02-15 |
JP7507019B2 true JP7507019B2 (ja) | 2024-06-27 |
Family
ID=74564026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020117613A Active JP7507019B2 (ja) | 2019-07-18 | 2020-07-08 | 窒化アルミニウム焼結体、その製造方法、および窒化アルミニウム焼結体を用いた半導体製造装置用部品 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP7507019B2 (ja) |
TW (1) | TWI808331B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001064079A (ja) | 1999-08-25 | 2001-03-13 | Sumitomo Electric Ind Ltd | 窒化アルミニウム焼結体及びその製造方法 |
JP2001089246A (ja) | 1999-09-16 | 2001-04-03 | Ngk Spark Plug Co Ltd | セラミック焼結体の製造方法 |
JP2007191383A (ja) | 2005-12-19 | 2007-08-02 | Ngk Insulators Ltd | 窒化アルミニウム粉末、窒化アルミニウム質セラミックス焼結体、半導体製造装置用部材、窒化アルミニウム発光材料、及び窒化アルミニウム粉末の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013010849A1 (de) | 2013-06-28 | 2015-01-15 | Besil Özkaya | Chaotisches Trainingsgerät zum Trainieren von Reaktionsvermögen, Reflexen etc. |
CN108706980A (zh) * | 2018-06-27 | 2018-10-26 | 深圳市商德先进陶瓷股份有限公司 | 氮化铝陶瓷及其制备方法、静电卡盘和应用 |
-
2020
- 2020-07-08 JP JP2020117613A patent/JP7507019B2/ja active Active
- 2020-07-17 TW TW109124202A patent/TWI808331B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001064079A (ja) | 1999-08-25 | 2001-03-13 | Sumitomo Electric Ind Ltd | 窒化アルミニウム焼結体及びその製造方法 |
JP2001089246A (ja) | 1999-09-16 | 2001-04-03 | Ngk Spark Plug Co Ltd | セラミック焼結体の製造方法 |
JP2007191383A (ja) | 2005-12-19 | 2007-08-02 | Ngk Insulators Ltd | 窒化アルミニウム粉末、窒化アルミニウム質セラミックス焼結体、半導体製造装置用部材、窒化アルミニウム発光材料、及び窒化アルミニウム粉末の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2021017396A (ja) | 2021-02-15 |
TW202108546A (zh) | 2021-03-01 |
TWI808331B (zh) | 2023-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108495829B (zh) | 陶瓷材料及静电卡盘装置 | |
EP1602635B1 (en) | Manufacturing method for sintered body with buried metallic member | |
JP4744855B2 (ja) | 静電チャック | |
KR101661385B1 (ko) | 가열 장치 | |
JP4482472B2 (ja) | 静電チャック及びその製造方法 | |
JP3888531B2 (ja) | セラミックヒーター、セラミックヒーターの製造方法、および金属部材の埋設品 | |
JP4879929B2 (ja) | 静電チャック及びその製造方法 | |
TWI709546B (zh) | 複合燒結體、半導體製造裝置構件及複合燒結體之製造方法 | |
KR100634182B1 (ko) | 기판 가열 장치와 그 제조 방법 | |
TW202204290A (zh) | 積層構造體及半導體製造裝置構件 | |
US6806443B2 (en) | Ceramic susceptor | |
US7394043B2 (en) | Ceramic susceptor | |
JP7507019B2 (ja) | 窒化アルミニウム焼結体、その製造方法、および窒化アルミニウム焼結体を用いた半導体製造装置用部品 | |
KR20210010399A (ko) | 질화알루미늄 소결체, 그 제조 방법, 및 질화알루미늄 소결체를 사용한 반도체 제조 장치용 부품 | |
CN114180942B (zh) | 复合烧结体、半导体制造装置构件及复合烧结体的制造方法 | |
TWI764320B (zh) | 複合燒結體及複合燒結體的製造方法 | |
JP2006228633A (ja) | 基板加熱装置の製造方法及び基板加熱装置 | |
CN110294630B (zh) | 复合烧结体、半导体制造装置部件和复合烧结体的制造方法 | |
JP7240232B2 (ja) | 保持装置 | |
CN113196870B (zh) | 电极埋设构件和其制造方法、静电卡盘、陶瓷制加热器 | |
JP7184652B2 (ja) | 保持装置 | |
JP4522963B2 (ja) | 加熱装置 | |
JP2017147126A (ja) | セラミックスヒータの製造方法 | |
JP2006286646A (ja) | セラミックスヒータ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230426 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240130 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240325 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240611 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240617 |