JP2018013977A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2018013977A JP2018013977A JP2016143470A JP2016143470A JP2018013977A JP 2018013977 A JP2018013977 A JP 2018013977A JP 2016143470 A JP2016143470 A JP 2016143470A JP 2016143470 A JP2016143470 A JP 2016143470A JP 2018013977 A JP2018013977 A JP 2018013977A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000012546 transfer Methods 0.000 description 49
- 238000009966 trimming Methods 0.000 description 37
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 10
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 10
- 101000622427 Homo sapiens Vang-like protein 1 Proteins 0.000 description 10
- 101000622430 Homo sapiens Vang-like protein 2 Proteins 0.000 description 10
- 102100023517 Vang-like protein 1 Human genes 0.000 description 10
- 102100023520 Vang-like protein 2 Human genes 0.000 description 10
- 108010086600 N(2),N(2)-dimethylguanosine-26-methyltransferase Proteins 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 102100034541 tRNA (guanine(26)-N(2))-dimethyltransferase Human genes 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 101150080194 GCD10 gene Proteins 0.000 description 5
- 101150003539 TRM6 gene Proteins 0.000 description 5
- 101150066419 Trmt6 gene Proteins 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 102100032968 tRNA (adenine(58)-N(1))-methyltransferase non-catalytic subunit TRM6 Human genes 0.000 description 5
- 101000766035 Homo sapiens tRNA (guanine(37)-N1)-methyltransferase Proteins 0.000 description 4
- 101150110418 STB3 gene Proteins 0.000 description 4
- 101150012711 STB5 gene Proteins 0.000 description 4
- 101100150580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) STB4 gene Proteins 0.000 description 4
- 102100026250 tRNA (guanine(37)-N1)-methyltransferase Human genes 0.000 description 4
- 101000645364 Homo sapiens tRNA methyltransferase 10 homolog A Proteins 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 102100025768 tRNA methyltransferase 10 homolog A Human genes 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 102100040436 Alkylated DNA repair protein alkB homolog 8 Human genes 0.000 description 2
- 101100343585 Arabidopsis thaliana LNG1 gene Proteins 0.000 description 2
- 101000891521 Homo sapiens Alkylated DNA repair protein alkB homolog 8 Proteins 0.000 description 2
- 101000788412 Homo sapiens Probable methyltransferase TARBP1 Proteins 0.000 description 2
- 101000611731 Homo sapiens Putative tRNA (cytidine(32)/guanosine(34)-2'-O)-methyltransferase Proteins 0.000 description 2
- 101001108656 Homo sapiens RNA cytosine C(5)-methyltransferase NSUN2 Proteins 0.000 description 2
- 101000830183 Homo sapiens tRNA (guanine-N(7)-)-methyltransferase Proteins 0.000 description 2
- 102100025214 Probable methyltransferase TARBP1 Human genes 0.000 description 2
- 102100040688 Putative tRNA (cytidine(32)/guanosine(34)-2'-O)-methyltransferase Human genes 0.000 description 2
- 102100021555 RNA cytosine C(5)-methyltransferase NSUN2 Human genes 0.000 description 2
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- 102100025028 tRNA (guanine-N(7)-)-methyltransferase Human genes 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Amplifiers (AREA)
Abstract
Description
図1は、実施形態1に基づく半導体装置の構成を説明する図である。
図2に示されるように、レギュレータ回路100は、アンプ(AMP)50と、分圧回路10と、スタンバイ設定回路6A,6Bとを含む。
トランスファーゲートTF7は、負帰還ノードN2と接続ノードN3との間に設けられる。トランスファーゲートTF7は、トリミング信号TRM6に従って負帰還ノードN2と接続ノードN3とを接続する。
スタンバイ設定回路6Aは、電源電圧VDD2とノードN0との間にトランスファーゲートTF1を含み、スタンバイ信号STB1に従って動作する。
スタンバイ設定回路6Bは、電源電圧VDD2と負帰還ノードN2との間にトランスファーゲートTF0を含み、スタンバイ信号STB1に従って動作する。
(実施形態2)
図4は、実施形態2に基づくレギュレータ回路102の回路構成を説明する図である。
図6は、実施形態2の変形例に基づくレギュレータ回路104の回路構成図である。
本例においては、出力電圧VOUTが安定状態になった後、第2分圧抵抗経路を遮断することにより電流を絞る。これにより回路全体の消費電力を低減することが可能である。
Claims (10)
- 電源電圧と接続され、基準電圧と負帰還ノードとの電圧に基づく電圧を出力ノードに出力するアンプと、
前記出力ノードと接続され、分圧した分圧電圧を前記負帰還ノードに出力する分圧回路とを備え、
前記分圧回路は、
抵抗値がそれぞれ異なる第1および第2の分圧抵抗経路と、
前記第1および第2の分圧抵抗経路とそれぞれ接続され、分圧比を調整可能な第1のスイッチ回路と、
前記第1および第2の分圧抵抗経路を制御する第2のスイッチ回路とを含む、半導体装置。 - 前記分圧回路は、前記第1および第2の分圧抵抗経路それぞれの分圧比が同じノードを接続する第3のスイッチ回路をさらに含む、請求項1記載の半導体装置。
- 前記第2のスイッチ回路は、
前記第1および第2の分圧抵抗経路と共通に設けられた第1のスイッチと、
前記第1のスイッチ素子と前記第2の分圧抵抗経路との間に設けられた第2のスイッチとを含む、請求項1記載の半導体装置。 - 前記第2の分圧抵抗経路は、前記第1の分圧抵抗経路よりも抵抗値が低く、
前記第1および第2のスイッチは、起動状態においてはともに導通状態に設定され、安定状態においては前記第2のスイッチは非導通状態に設定される、請求項3記載の半導体装置。 - 前記第1および第2のスイッチは、前記起動状態および前記安定状態を規定するモード制御信号に従って制御される、請求項4記載の半導体装置。
- 前記アンプは、前記アンプの動作電流を調整する調整回路を含む、請求項1記載の半導体装置。
- 前記調整回路は、導通する個数に基づき前記動作電流の電流量を調整することが可能な複数のトランジスタを含む、請求項6記載の半導体装置。
- 前記複数のトランジスタのうち起動状態において導通する個数は、安定状態において導通する個数よりも多い、請求項7記載の半導体装置。
- 前記複数のトランジスタは、前記起動状態および前記安定状態を規定するモード制御信号に従って制御される、請求項8記載の半導体装置。
- 前記アンプは、前記電源電圧の供給を制御する電源制御スイッチを含む、請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016143470A JP6689152B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
CN201710373370.3A CN107643784A (zh) | 2016-07-21 | 2017-05-24 | 半导体装置 |
US15/655,799 US10186969B2 (en) | 2016-07-21 | 2017-07-20 | Semiconductor device |
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JP2016143470A JP6689152B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
Publications (2)
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JP2018013977A true JP2018013977A (ja) | 2018-01-25 |
JP6689152B2 JP6689152B2 (ja) | 2020-04-28 |
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JP2016143470A Active JP6689152B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
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US (1) | US10186969B2 (ja) |
JP (1) | JP6689152B2 (ja) |
CN (1) | CN107643784A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3691224B1 (en) | 2019-02-01 | 2022-06-29 | Ami Global | A method for monitoring and controlling an industrial process which change condition over time and a communication gateway |
EP3708971B1 (en) | 2019-03-12 | 2023-06-14 | Ami Global | Gateway with means for reshaping an electrical raw input sensor signal to a formatted electrical input signal |
US11194384B2 (en) * | 2019-07-24 | 2021-12-07 | Intel Corporation | Circuit and method for improved battery life during suspend mode |
CN114518777A (zh) * | 2020-11-19 | 2022-05-20 | 启碁科技股份有限公司 | 具有可动态配置反馈电压的电压调节电路 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008027141A (ja) * | 2006-07-20 | 2008-02-07 | Ricoh Co Ltd | 定電圧回路 |
US20090085545A1 (en) * | 2007-09-27 | 2009-04-02 | Nanoamp Solutions, Inc. (Cayman) | Voltage regulator |
JP2009071709A (ja) * | 2007-09-14 | 2009-04-02 | Oki Electric Ind Co Ltd | トリミング回路 |
JP2014048868A (ja) * | 2012-08-31 | 2014-03-17 | Renesas Electronics Corp | レギュレータ回路及びこれを用いた半導体装置 |
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IT1311441B1 (it) * | 1999-11-16 | 2002-03-12 | St Microelectronics Srl | Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. |
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JP4861047B2 (ja) * | 2006-04-24 | 2012-01-25 | 株式会社東芝 | 電圧発生回路及びこれを備える半導体記憶装置 |
US20070296392A1 (en) * | 2006-06-23 | 2007-12-27 | Mediatek Inc. | Bandgap reference circuits |
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JP2009217809A (ja) * | 2008-02-12 | 2009-09-24 | Seiko Epson Corp | 基準電圧生成回路、集積回路装置および信号処理装置 |
JP5607963B2 (ja) * | 2010-03-19 | 2014-10-15 | スパンション エルエルシー | 基準電圧回路および半導体集積回路 |
US9411348B2 (en) * | 2010-04-13 | 2016-08-09 | Semiconductor Components Industries, Llc | Programmable low-dropout regulator and methods therefor |
CN102467144B (zh) * | 2010-11-05 | 2014-03-12 | 成都芯源系统有限公司 | 电压调节器的输出电压修调装置及修调方法 |
JP5635935B2 (ja) * | 2011-03-31 | 2014-12-03 | ルネサスエレクトロニクス株式会社 | 定電流生成回路、これを含むマイクロプロセッサ及び半導体装置 |
EP2851762B1 (en) * | 2013-09-24 | 2017-12-06 | STMicroelectronics International N.V. | Feedback network for low-drop-out generator |
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2016
- 2016-07-21 JP JP2016143470A patent/JP6689152B2/ja active Active
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2017
- 2017-05-24 CN CN201710373370.3A patent/CN107643784A/zh active Pending
- 2017-07-20 US US15/655,799 patent/US10186969B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008027141A (ja) * | 2006-07-20 | 2008-02-07 | Ricoh Co Ltd | 定電圧回路 |
JP2009071709A (ja) * | 2007-09-14 | 2009-04-02 | Oki Electric Ind Co Ltd | トリミング回路 |
US20090085545A1 (en) * | 2007-09-27 | 2009-04-02 | Nanoamp Solutions, Inc. (Cayman) | Voltage regulator |
JP2014048868A (ja) * | 2012-08-31 | 2014-03-17 | Renesas Electronics Corp | レギュレータ回路及びこれを用いた半導体装置 |
Also Published As
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US20180026541A1 (en) | 2018-01-25 |
US10186969B2 (en) | 2019-01-22 |
JP6689152B2 (ja) | 2020-04-28 |
CN107643784A (zh) | 2018-01-30 |
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