JP2018013977A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2018013977A JP2018013977A JP2016143470A JP2016143470A JP2018013977A JP 2018013977 A JP2018013977 A JP 2018013977A JP 2016143470 A JP2016143470 A JP 2016143470A JP 2016143470 A JP2016143470 A JP 2016143470A JP 2018013977 A JP2018013977 A JP 2018013977A
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- voltage
- voltage dividing
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Amplifiers (AREA)
Abstract
Description
図1は、実施形態1に基づく半導体装置の構成を説明する図である。
図2に示されるように、レギュレータ回路100は、アンプ(AMP)50と、分圧回路10と、スタンバイ設定回路6A,6Bとを含む。
トランスファーゲートTF7は、負帰還ノードN2と接続ノードN3との間に設けられる。トランスファーゲートTF7は、トリミング信号TRM6に従って負帰還ノードN2と接続ノードN3とを接続する。
スタンバイ設定回路6Aは、電源電圧VDD2とノードN0との間にトランスファーゲートTF1を含み、スタンバイ信号STB1に従って動作する。
スタンバイ設定回路6Bは、電源電圧VDD2と負帰還ノードN2との間にトランスファーゲートTF0を含み、スタンバイ信号STB1に従って動作する。
(実施形態2)
図4は、実施形態2に基づくレギュレータ回路102の回路構成を説明する図である。
図6は、実施形態2の変形例に基づくレギュレータ回路104の回路構成図である。
本例においては、出力電圧VOUTが安定状態になった後、第2分圧抵抗経路を遮断することにより電流を絞る。これにより回路全体の消費電力を低減することが可能である。
Claims (10)
- 電源電圧と接続され、基準電圧と負帰還ノードとの電圧に基づく電圧を出力ノードに出力するアンプと、
前記出力ノードと接続され、分圧した分圧電圧を前記負帰還ノードに出力する分圧回路とを備え、
前記分圧回路は、
抵抗値がそれぞれ異なる第1および第2の分圧抵抗経路と、
前記第1および第2の分圧抵抗経路とそれぞれ接続され、分圧比を調整可能な第1のスイッチ回路と、
前記第1および第2の分圧抵抗経路を制御する第2のスイッチ回路とを含む、半導体装置。 - 前記分圧回路は、前記第1および第2の分圧抵抗経路それぞれの分圧比が同じノードを接続する第3のスイッチ回路をさらに含む、請求項1記載の半導体装置。
- 前記第2のスイッチ回路は、
前記第1および第2の分圧抵抗経路と共通に設けられた第1のスイッチと、
前記第1のスイッチ素子と前記第2の分圧抵抗経路との間に設けられた第2のスイッチとを含む、請求項1記載の半導体装置。 - 前記第2の分圧抵抗経路は、前記第1の分圧抵抗経路よりも抵抗値が低く、
前記第1および第2のスイッチは、起動状態においてはともに導通状態に設定され、安定状態においては前記第2のスイッチは非導通状態に設定される、請求項3記載の半導体装置。 - 前記第1および第2のスイッチは、前記起動状態および前記安定状態を規定するモード制御信号に従って制御される、請求項4記載の半導体装置。
- 前記アンプは、前記アンプの動作電流を調整する調整回路を含む、請求項1記載の半導体装置。
- 前記調整回路は、導通する個数に基づき前記動作電流の電流量を調整することが可能な複数のトランジスタを含む、請求項6記載の半導体装置。
- 前記複数のトランジスタのうち起動状態において導通する個数は、安定状態において導通する個数よりも多い、請求項7記載の半導体装置。
- 前記複数のトランジスタは、前記起動状態および前記安定状態を規定するモード制御信号に従って制御される、請求項8記載の半導体装置。
- 前記アンプは、前記電源電圧の供給を制御する電源制御スイッチを含む、請求項1記載の半導体装置。
Priority Applications (3)
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JP2016143470A JP6689152B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
CN201710373370.3A CN107643784A (zh) | 2016-07-21 | 2017-05-24 | 半导体装置 |
US15/655,799 US10186969B2 (en) | 2016-07-21 | 2017-07-20 | Semiconductor device |
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JP2016143470A JP6689152B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
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JP2018013977A true JP2018013977A (ja) | 2018-01-25 |
JP6689152B2 JP6689152B2 (ja) | 2020-04-28 |
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JP2016143470A Active JP6689152B2 (ja) | 2016-07-21 | 2016-07-21 | 半導体装置 |
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US (1) | US10186969B2 (ja) |
JP (1) | JP6689152B2 (ja) |
CN (1) | CN107643784A (ja) |
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EP3691224B1 (en) | 2019-02-01 | 2022-06-29 | Ami Global | A method for monitoring and controlling an industrial process which change condition over time and a communication gateway |
EP3708971B1 (en) | 2019-03-12 | 2023-06-14 | Ami Global | Gateway with means for reshaping an electrical raw input sensor signal to a formatted electrical input signal |
US11194384B2 (en) * | 2019-07-24 | 2021-12-07 | Intel Corporation | Circuit and method for improved battery life during suspend mode |
CN114518777A (zh) * | 2020-11-19 | 2022-05-20 | 启碁科技股份有限公司 | 具有可动态配置反馈电压的电压调节电路 |
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IT1311441B1 (it) * | 1999-11-16 | 2002-03-12 | St Microelectronics Srl | Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. |
JP4199396B2 (ja) | 1999-12-17 | 2008-12-17 | 株式会社デンソーウェーブ | 光学情報読取装置 |
JP4861047B2 (ja) * | 2006-04-24 | 2012-01-25 | 株式会社東芝 | 電圧発生回路及びこれを備える半導体記憶装置 |
US20070296392A1 (en) * | 2006-06-23 | 2007-12-27 | Mediatek Inc. | Bandgap reference circuits |
US8212544B2 (en) * | 2007-08-13 | 2012-07-03 | SK hynix, Inc. | Semiconductor integrated circuit having level regulation for reference voltage |
JP2009217809A (ja) * | 2008-02-12 | 2009-09-24 | Seiko Epson Corp | 基準電圧生成回路、集積回路装置および信号処理装置 |
JP5607963B2 (ja) * | 2010-03-19 | 2014-10-15 | スパンション エルエルシー | 基準電圧回路および半導体集積回路 |
US9411348B2 (en) * | 2010-04-13 | 2016-08-09 | Semiconductor Components Industries, Llc | Programmable low-dropout regulator and methods therefor |
CN102467144B (zh) * | 2010-11-05 | 2014-03-12 | 成都芯源系统有限公司 | 电压调节器的输出电压修调装置及修调方法 |
JP5635935B2 (ja) * | 2011-03-31 | 2014-12-03 | ルネサスエレクトロニクス株式会社 | 定電流生成回路、これを含むマイクロプロセッサ及び半導体装置 |
EP2851762B1 (en) * | 2013-09-24 | 2017-12-06 | STMicroelectronics International N.V. | Feedback network for low-drop-out generator |
US9886047B2 (en) * | 2015-05-01 | 2018-02-06 | Rohm Co., Ltd. | Reference voltage generation circuit including resistor arrangements |
US20170052552A1 (en) * | 2015-08-21 | 2017-02-23 | Qualcomm Incorporated | Single ldo for multiple voltage domains |
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2016
- 2016-07-21 JP JP2016143470A patent/JP6689152B2/ja active Active
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2017
- 2017-05-24 CN CN201710373370.3A patent/CN107643784A/zh active Pending
- 2017-07-20 US US15/655,799 patent/US10186969B2/en active Active
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Publication number | Publication date |
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US10186969B2 (en) | 2019-01-22 |
CN107643784A (zh) | 2018-01-30 |
JP6689152B2 (ja) | 2020-04-28 |
US20180026541A1 (en) | 2018-01-25 |
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