JP2018011054A - アルミニウム化合物とそれを利用した薄膜形成方法及び集積回路素子の製造方法 - Google Patents
アルミニウム化合物とそれを利用した薄膜形成方法及び集積回路素子の製造方法 Download PDFInfo
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- JP2018011054A JP2018011054A JP2017130123A JP2017130123A JP2018011054A JP 2018011054 A JP2018011054 A JP 2018011054A JP 2017130123 A JP2017130123 A JP 2017130123A JP 2017130123 A JP2017130123 A JP 2017130123A JP 2018011054 A JP2018011054 A JP 2018011054A
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- film
- aluminum
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- aluminum compound
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Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 178
- 238000000034 method Methods 0.000 title claims abstract description 134
- -1 Aluminum compound Chemical class 0.000 title claims abstract description 133
- 239000010409 thin film Substances 0.000 title claims abstract description 60
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 21
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 13
- 125000000304 alkynyl group Chemical group 0.000 claims abstract description 13
- 125000003118 aryl group Chemical group 0.000 claims abstract description 12
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 316
- 229910052751 metal Inorganic materials 0.000 claims description 75
- 239000002184 metal Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 69
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 54
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 52
- 239000000126 substance Substances 0.000 claims description 51
- 239000007789 gas Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 5
- XTFIVUDBNACUBN-UHFFFAOYSA-N 1,3,5-trinitro-1,3,5-triazinane Chemical compound [O-][N+](=O)N1CN([N+]([O-])=O)CN([N+]([O-])=O)C1 XTFIVUDBNACUBN-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N Formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 125000005270 trialkylamine group Chemical group 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 125000005265 dialkylamine group Chemical group 0.000 claims description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 90
- 239000010410 layer Substances 0.000 description 84
- 238000000231 atomic layer deposition Methods 0.000 description 38
- 150000001875 compounds Chemical class 0.000 description 30
- 239000002243 precursor Substances 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 23
- 239000002994 raw material Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 12
- 238000002411 thermogravimetry Methods 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000000113 differential scanning calorimetry Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010926 purge Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- CQYBWJYIKCZXCN-UHFFFAOYSA-N diethylaluminum Chemical compound CC[Al]CC CQYBWJYIKCZXCN-UHFFFAOYSA-N 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 229910004491 TaAlN Inorganic materials 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- IDVWLLCLTVBSCS-UHFFFAOYSA-N n,n'-ditert-butylmethanediimine Chemical compound CC(C)(C)N=C=NC(C)(C)C IDVWLLCLTVBSCS-UHFFFAOYSA-N 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910018921 CoO 3 Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010041 TiAlC Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
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- 230000006399 behavior Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000004985 dialkyl amino alkyl group Chemical group 0.000 description 1
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- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012263 liquid product Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012434 nucleophilic reagent Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ASRAWSBMDXVNLX-UHFFFAOYSA-N pyrazolynate Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(=O)C=1C(C)=NN(C)C=1OS(=O)(=O)C1=CC=C(C)C=C1 ASRAWSBMDXVNLX-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 125000005353 silylalkyl group Chemical group 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
Description
R1及びR3は、それぞれ独立して、C4−C10分枝状のアルキル基、アルケニル基、アルキニル基、またはC4−C20置換もしくは非置換の芳香族または脂環式の炭化水素基であり、R2、R4、及びR5は、それぞれ独立して、C1−C10直鎖または分枝状のアルキル基、アルケニル基、アルキニル基、またはC6−C20置換もしくは非置換の芳香族または脂環式の炭化水素基である。一般式1のアルミニウム化合物は、熱分解温度が約350℃〜500℃である。
断面図である。
反応性ガス:H2O(water gas)
110 基板
122 エッチング停止用絶縁膜
126、228 絶縁層
130 チャネルホール
132 電荷保存膜
134 トンネル絶縁膜
136 ブロッキング絶縁膜
140 チャネル領域
142 絶縁膜
150、312 導電パターン
160 開口
164、420G ゲート電極
168 共通ソース領域
172 絶縁スペーサ
174 導電性プラグ
182 第1コンタクト
184 第1導電層
192 第2コンタクト
194 ビットライン
212 素子分離領域
220、444 層間絶縁膜
224 導電領域
228P 絶縁パターン
230 モールド膜
230P モールドパターン
242 犠牲膜
242P 犠牲パターン
244 マスクパターン
250 下部電極形成用導電膜
260 誘電膜
270 キャパシタ
314 層間絶縁膜パターン
320 導電性バリア膜
330 配線層
402 素子分離膜
412 インターフェース層
414 高誘電膜
420 ゲート構造体
426A 第1金属含有層
426B 第2金属含有層
428 ギャップフィル金属層
430 ソース/ドレイン領域
442 絶縁スペーサ
P124 犠牲層
AC 活性領域
FA フィン型活性領域
GS ゲート空間
H1、314H ホール
LE 下部電極
TR MOSトランジスタ
UE 上部電極
Claims (25)
- 熱分解温度が350℃〜500℃であることを特徴とする請求項1に記載のアルミニウム化合物。
- 前記R1及びR3において、Al原子からベータ(β)位置にある水素原子の数が0個であることを特徴とする請求項1に記載のアルミニウム化合物。
- 前記R1及びR3は、それぞれ第3アルキル基であることを特徴とする請求項1に記載のアルミニウム化合物。
- 前記アルミニウム化合物は、熱分解温度が350℃〜500℃であることを特徴とする請求項6に記載の薄膜形成方法。
- 前記R1及びR3は、それぞれ第3アルキル基であることを特徴とする請求項6に記載の薄膜形成方法。
- 前記アルミニウム含有膜を形成する段階は、300℃〜600℃の温度下で遂行されることを特徴とする請求項6に記載の薄膜形成方法。
- 前記アルミニウム含有膜を形成する段階は、
前記基板上にアルミニウム化合物及び反応性ガスを同時にまたは順次に供給する段階を含むことを特徴とする請求項6に記載の薄膜形成方法。 - 前記反応性ガスは、NH3、モノアルキルアミン、ジアルキルアミン、トリアルキルアミン、有機アミン化合物、ヒドラジン化合物、及びそれらの組み合わせのうちから選択されることを特徴とする請求項11に記載の薄膜形成方法。
- 前記反応性ガスは、O2、O3、プラズマO2、H2O、NO2、NO、N2O(nitrous oxide)、CO2、H2O2、HCOOH、CH3COOH、(CH3CO)2O、及びそれらの組み合わせのうちから選択されることを特徴とする請求項11に記載の薄膜形成方法。
- 前記アルミニウム含有膜を形成する段階は、
前記アルミニウム化合物を含むソースガスを気化させる段階と、
前記気化されたソースガスを前記基板上に供給して前記基板上にAlソース吸着層を形成する段階と、
前記Alソース吸着層上に反応性ガスを供給する段階と、を含むことを特徴とする請求項6に記載の薄膜形成方法。 - 前記アルミニウム含有膜は、アルミニウム酸化膜、アルミニウム窒化膜、または炭素を含むアルミニウム合金膜であることを特徴とする請求項6に記載の薄膜形成方法。
- 基板上に下部構造物を形成する段階と、
下記の一般式1で表されるアルミニウム化合物を使用して、300℃〜600℃の温度下で、前記下部構造物上にアルミニウム含有膜を形成する段階と、を含むことを特徴とする集積回路素子の製造方法。
R1及びR3は、それぞれ独立して、C4−C10分枝状のアルキル基、アルケニル基、アルキニル基、またはC4−C20置換もしくは非置換の芳香族または脂環式の炭化水素基であり、
R2、R4、及びR5は、それぞれ独立して、C1−C10直鎖または分枝状のアルキル基、アルケニル基、アルキニル基、またはC6−C20置換もしくは非置換の芳香族または脂環式の炭化水素基である。 - 前記アルミニウム化合物は、熱分解温度が350℃〜500℃であることを特徴とする請求項16に記載の集積回路素子の製造方法。
- 前記R1及びR3は、それぞれ第3アルキル基であることを特徴とする請求項16に記載の集積回路素子の製造方法。
- 前記下部構造物を形成する段階は、
前記基板上に前記基板に対して平行に延長される複数の絶縁層と複数の犠牲層とを相互に1層ずつ積層する段階と、
前記複数の犠牲層及び複数の絶縁層を貫通して前記複数の犠牲層を露出させる開口を形成する段階と、
前記開口を介し、前記複数の犠牲層を除去して絶縁層のそれぞれの間に一つずつ配置される複数のゲート空間を設ける段階と、を含み、
前記アルミニウム含有膜を形成する段階は、
300℃〜600℃の範囲内で選択される第1温度下で、前記開口を介し、前記アルミニウム化合物を供給して前記複数のゲート空間の内壁と前記開口において露出される前記複数の絶縁層の側壁とを覆うアルミニウム酸化膜を形成する段階を含むことを特徴とする請求項16に記載の集積回路素子の製造方法。 - 前記アルミニウム酸化膜を形成した後、前記第1温度より高い第2温度下で、前記アルミニウム酸化膜をアニーリングして前記アルミニウム酸化膜を緻密化させる段階をさらに含むことを特徴とする請求項19に記載の集積回路素子の製造方法。
- 前記アルミニウム酸化膜を形成した後、前記複数のゲート空間において、前記アルミニウム酸化膜によって包囲される残りの空間を充填する導電膜を形成する段階と、
前記アルミニウム酸化膜及び前記導電膜において、前記開口にある部分を除去して前記複数のゲート空間内にそれぞれ前記アルミニウム酸化膜の一部であるブロッキング絶縁膜と前記導電膜の一部であるゲート電極とを形成する段階と、を含むことを特徴とする請求項19に記載の集積回路素子の製造方法。 - 前記基板上に下部電極、誘電膜、及び上部電極を含むキャパシタを形成する段階をさらに含み、
前記下部構造物を形成する段階は、前記基板上に前記キャパシタの下部電極を形成する段階を含み、
前記アルミニウム含有膜を形成する段階は、前記誘電膜を形成するために、前記下部電極の表面を覆うアルミニウム酸化膜を形成する段階を含むことを特徴とする請求項16に記載の集積回路素子の製造方法。 - 前記キャパシタを形成する段階は、前記誘電膜を形成するために、前記アルミニウム含有膜とアルミニウムとは異なる金属を含む少なくとも1つの金属酸化膜との組み合わせからなる高誘電膜を形成する段階を含むことを特徴とする請求項22に記載の集積回路素子の製造方法。
- 前記下部構造物を形成する段階は、
前記基板の一部をエッチングして前記基板から上部に突出するフィン型活性領域を形成する段階と、
前記フィン型活性領域上に高誘電膜を形成する段階と、を含み、
前記アルミニウム含有膜を形成する段階は、
前記一般式1で表されるアルミニウム化合物とアルミニウムではない他の金属を含む金属化合物とを使用し、300℃〜600℃の温度下で、前記高誘電膜を挟み前記フィン型活性領域の上面及び両側壁を覆うAl合金導電膜を形成する段階を含むことを特徴とする請求項16に記載の集積回路素子の製造方法。 - 前記他の金属は、TiまたはTaであり、
前記Al合金導電膜は、炭素原子を含むことを特徴とする請求項24に記載の集積回路素子の製造方法。
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