JP2017533410A5 - - Google Patents

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Publication number
JP2017533410A5
JP2017533410A5 JP2017512369A JP2017512369A JP2017533410A5 JP 2017533410 A5 JP2017533410 A5 JP 2017533410A5 JP 2017512369 A JP2017512369 A JP 2017512369A JP 2017512369 A JP2017512369 A JP 2017512369A JP 2017533410 A5 JP2017533410 A5 JP 2017533410A5
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JP
Japan
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voltage
node
distributed
source
load
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JP2017512369A
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Japanese (ja)
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JP2017533410A (ja
JP6702945B2 (ja
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Priority claimed from US14/482,456 external-priority patent/US9494957B2/en
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JP2017512369A 2014-09-10 2015-08-20 電圧平均化を使用する分散型電圧ネットワーク回路ならびに関連するシステムおよび方法 Active JP6702945B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/482,456 US9494957B2 (en) 2014-09-10 2014-09-10 Distributed voltage network circuits employing voltage averaging, and related systems and methods
US14/482,456 2014-09-10
PCT/US2015/046067 WO2016039962A1 (en) 2014-09-10 2015-08-20 Distributed voltage network circuits employing voltage averaging, and related systems and methods

Publications (3)

Publication Number Publication Date
JP2017533410A JP2017533410A (ja) 2017-11-09
JP2017533410A5 true JP2017533410A5 (enExample) 2018-09-13
JP6702945B2 JP6702945B2 (ja) 2020-06-03

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ID=54072974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017512369A Active JP6702945B2 (ja) 2014-09-10 2015-08-20 電圧平均化を使用する分散型電圧ネットワーク回路ならびに関連するシステムおよび方法

Country Status (10)

Country Link
US (1) US9494957B2 (enExample)
EP (1) EP3191858B1 (enExample)
JP (1) JP6702945B2 (enExample)
KR (1) KR102331244B1 (enExample)
CN (1) CN106662888B (enExample)
BR (1) BR112017004693B1 (enExample)
CA (1) CA2957035C (enExample)
ES (1) ES2861265T3 (enExample)
TW (1) TWI594538B (enExample)
WO (1) WO2016039962A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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US10345834B2 (en) * 2017-08-09 2019-07-09 Qualcomm Incorporated Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging
US11047946B2 (en) 2018-05-08 2021-06-29 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance
US10958167B2 (en) 2018-08-08 2021-03-23 Qualcomm Incorporated Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power
US11099238B2 (en) * 2019-03-27 2021-08-24 General Electric Company Distributed control modules with built-in tests and control-preserving fault responses
KR102639597B1 (ko) 2020-08-06 2024-02-23 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 메모리를 위한 멀티-다이 피크 전력 관리
US11625054B2 (en) * 2021-06-17 2023-04-11 Novatek Microelectronics Corp. Voltage to current converter of improved size and accuracy
US12153087B2 (en) 2021-06-25 2024-11-26 Ic Analytica, Llc Apparatus and method for testing all test circuits on a wafer from a single test site
JP2023043717A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 半導体装置及び半導体集積回路
US12066959B2 (en) * 2022-05-12 2024-08-20 Intel Corporation Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die
US20230398878A1 (en) * 2022-06-14 2023-12-14 Ford Global Technologies, Llc Control of gate drive resistance based on radio frequency interference

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US3934209A (en) * 1974-04-23 1976-01-20 Minnesota Mining And Manufacturing Company High voltage DC coupled amplifier
DE3500676A1 (de) * 1985-01-11 1986-07-17 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen
DE4237122C2 (de) 1992-11-03 1996-12-12 Texas Instruments Deutschland Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors
US5600578A (en) * 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
US6191966B1 (en) 1999-12-20 2001-02-20 Texas Instruments Incorporated Phase current sensor using inverter leg shunt resistor
US6461880B1 (en) * 2001-06-28 2002-10-08 Advanced Micro Devices, Inc. Method for monitoring silicide failures
DE10258766B4 (de) * 2002-12-16 2005-08-25 Infineon Technologies Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststroms durch eine Last
US6937178B1 (en) 2003-05-15 2005-08-30 Linear Technology Corporation Gradient insensitive split-core digital to analog converter
US7718448B1 (en) 2005-05-27 2010-05-18 National Semiconductor Corporation Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays
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JP2009123926A (ja) * 2007-11-15 2009-06-04 Seiko Epson Corp 基準電圧発生回路、ad変換器、da変換器、および画像処理装置
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CN102246115B (zh) * 2008-11-25 2014-04-02 凌力尔特有限公司 用于半导体芯片内金属电阻器的温度补偿的电路、调修和布图
WO2012147139A1 (ja) * 2011-04-26 2012-11-01 パナソニック株式会社 半導体集積回路システムおよびそれを備えた電子機器、電気製品、移動体
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US8890601B2 (en) * 2011-11-11 2014-11-18 Qualcomm Incorporated Method, system, and circuit with a driver output interface having a common mode connection coupled to a transistor bulk connection
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