KR102331244B1 - 전압 평균화를 채용하는 분산형 전압 네트워크 회로들, 및 관련 시스템들 및 방법들 - Google Patents

전압 평균화를 채용하는 분산형 전압 네트워크 회로들, 및 관련 시스템들 및 방법들 Download PDF

Info

Publication number
KR102331244B1
KR102331244B1 KR1020177006358A KR20177006358A KR102331244B1 KR 102331244 B1 KR102331244 B1 KR 102331244B1 KR 1020177006358 A KR1020177006358 A KR 1020177006358A KR 20177006358 A KR20177006358 A KR 20177006358A KR 102331244 B1 KR102331244 B1 KR 102331244B1
Authority
KR
South Korea
Prior art keywords
voltage
distributed
circuit
node
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177006358A
Other languages
English (en)
Korean (ko)
Other versions
KR20170056531A (ko
Inventor
버트 리 프라이스
예쉬원트 나가라즈 콜라
다발 라제쉬바이 샤
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20170056531A publication Critical patent/KR20170056531A/ko
Application granted granted Critical
Publication of KR102331244B1 publication Critical patent/KR102331244B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/003—Measuring mean values of current or voltage during a given time interval
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
KR1020177006358A 2014-09-10 2015-08-20 전압 평균화를 채용하는 분산형 전압 네트워크 회로들, 및 관련 시스템들 및 방법들 Active KR102331244B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/482,456 US9494957B2 (en) 2014-09-10 2014-09-10 Distributed voltage network circuits employing voltage averaging, and related systems and methods
US14/482,456 2014-09-10
PCT/US2015/046067 WO2016039962A1 (en) 2014-09-10 2015-08-20 Distributed voltage network circuits employing voltage averaging, and related systems and methods

Publications (2)

Publication Number Publication Date
KR20170056531A KR20170056531A (ko) 2017-05-23
KR102331244B1 true KR102331244B1 (ko) 2021-11-24

Family

ID=54072974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177006358A Active KR102331244B1 (ko) 2014-09-10 2015-08-20 전압 평균화를 채용하는 분산형 전압 네트워크 회로들, 및 관련 시스템들 및 방법들

Country Status (10)

Country Link
US (1) US9494957B2 (enExample)
EP (1) EP3191858B1 (enExample)
JP (1) JP6702945B2 (enExample)
KR (1) KR102331244B1 (enExample)
CN (1) CN106662888B (enExample)
BR (1) BR112017004693B1 (enExample)
CA (1) CA2957035C (enExample)
ES (1) ES2861265T3 (enExample)
TW (1) TWI594538B (enExample)
WO (1) WO2016039962A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10345834B2 (en) * 2017-08-09 2019-07-09 Qualcomm Incorporated Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging
US11047946B2 (en) 2018-05-08 2021-06-29 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance
US10958167B2 (en) 2018-08-08 2021-03-23 Qualcomm Incorporated Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power
US11099238B2 (en) * 2019-03-27 2021-08-24 General Electric Company Distributed control modules with built-in tests and control-preserving fault responses
KR102639597B1 (ko) 2020-08-06 2024-02-23 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 메모리를 위한 멀티-다이 피크 전력 관리
US11625054B2 (en) * 2021-06-17 2023-04-11 Novatek Microelectronics Corp. Voltage to current converter of improved size and accuracy
US12153087B2 (en) 2021-06-25 2024-11-26 Ic Analytica, Llc Apparatus and method for testing all test circuits on a wafer from a single test site
JP2023043717A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 半導体装置及び半導体集積回路
US12066959B2 (en) * 2022-05-12 2024-08-20 Intel Corporation Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die
US20230398878A1 (en) * 2022-06-14 2023-12-14 Ford Global Technologies, Llc Control of gate drive resistance based on radio frequency interference

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070296391A1 (en) * 2006-02-17 2007-12-27 Bertin Jacques J Current-monitoring apparatus
US20090128120A1 (en) * 2007-11-15 2009-05-21 Seiko Epson Corporation Reference voltage generation circuit, ad converter, da converter, and image processor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038437A (enExample) * 1973-08-08 1975-04-09
US3934209A (en) * 1974-04-23 1976-01-20 Minnesota Mining And Manufacturing Company High voltage DC coupled amplifier
DE3500676A1 (de) * 1985-01-11 1986-07-17 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen
DE4237122C2 (de) 1992-11-03 1996-12-12 Texas Instruments Deutschland Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors
US5600578A (en) * 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
US6191966B1 (en) 1999-12-20 2001-02-20 Texas Instruments Incorporated Phase current sensor using inverter leg shunt resistor
US6461880B1 (en) * 2001-06-28 2002-10-08 Advanced Micro Devices, Inc. Method for monitoring silicide failures
DE10258766B4 (de) * 2002-12-16 2005-08-25 Infineon Technologies Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststroms durch eine Last
US6937178B1 (en) 2003-05-15 2005-08-30 Linear Technology Corporation Gradient insensitive split-core digital to analog converter
US7718448B1 (en) 2005-05-27 2010-05-18 National Semiconductor Corporation Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays
EP2113656B1 (en) * 2008-04-29 2011-08-31 GM Global Technology Operations LLC A method and an apparatus for controlling glow plugs in a diesel engine, particularly for motor-vehicles
CN102246115B (zh) * 2008-11-25 2014-04-02 凌力尔特有限公司 用于半导体芯片内金属电阻器的温度补偿的电路、调修和布图
WO2012147139A1 (ja) * 2011-04-26 2012-11-01 パナソニック株式会社 半導体集積回路システムおよびそれを備えた電子機器、電気製品、移動体
DE102011108738B3 (de) 2011-07-28 2012-12-06 Texas Instruments Deutschland Gmbh Laststromabtastschaltung und Verfahren
CN102955492B (zh) * 2011-08-18 2014-12-10 祥硕科技股份有限公司 参考电流产生电路
US8890601B2 (en) * 2011-11-11 2014-11-18 Qualcomm Incorporated Method, system, and circuit with a driver output interface having a common mode connection coupled to a transistor bulk connection
FR2995696B1 (fr) 2012-09-19 2015-05-29 Commissariat Energie Atomique Circuit de mesure de tension differentielle
WO2014126496A1 (en) * 2013-02-14 2014-08-21 Freescale Semiconductor, Inc. Voltage regulator with improved load regulation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070296391A1 (en) * 2006-02-17 2007-12-27 Bertin Jacques J Current-monitoring apparatus
US20090128120A1 (en) * 2007-11-15 2009-05-21 Seiko Epson Corporation Reference voltage generation circuit, ad converter, da converter, and image processor

Also Published As

Publication number Publication date
CA2957035A1 (en) 2016-03-17
TWI594538B (zh) 2017-08-01
JP2017533410A (ja) 2017-11-09
KR20170056531A (ko) 2017-05-23
EP3191858A1 (en) 2017-07-19
ES2861265T3 (es) 2021-10-06
CA2957035C (en) 2022-12-13
CN106662888B (zh) 2019-02-22
BR112017004693A2 (pt) 2017-12-05
WO2016039962A1 (en) 2016-03-17
JP6702945B2 (ja) 2020-06-03
TW201618409A (zh) 2016-05-16
CN106662888A (zh) 2017-05-10
EP3191858B1 (en) 2021-01-20
US9494957B2 (en) 2016-11-15
US20160070277A1 (en) 2016-03-10
BR112017004693B1 (pt) 2022-06-21

Similar Documents

Publication Publication Date Title
KR102331244B1 (ko) 전압 평균화를 채용하는 분산형 전압 네트워크 회로들, 및 관련 시스템들 및 방법들
US20190195700A1 (en) MIDDLE-OF-LINE (MOL) METAL RESISTOR TEMPERATURE SENSORS FOR LOCALIZED TEMPERATURE SENSING OF ACTIVE SEMICONDUCTOR AREAS IN INTEGRATED CIRCUITS (ICs)
CN106199299B (zh) 用于负载链中的短路检测的系统和方法
Horng et al. A 0.7 V resistive sensor with temperature/voltage detection function in 16nm FinFET technologies
CN106935527B (zh) 电迁移签核方法和系统
CN107257948A (zh) 经校准的温度感测系统
JP2017533410A5 (enExample)
CN107024294A (zh) 一种多通道芯片温度测量电路及方法
CN110352395B (zh) 用于集成电路装置的改进的电流感测
US20150103866A1 (en) DIGITAL TEMPERATURE ESTIMATORS (DTEs) DISPOSED IN INTEGRATED CIRCUITS (ICs) FOR ESTIMATING TEMPERATURE WITHIN THE ICs, AND RELATED SYSTEMS AND METHODS
CN110998337B (zh) 使用分布式电压平均化电路感测分布式负载电路的总电流
US20230366746A1 (en) Multi-Sensing PTAT for Multiple-Location Temperature Sensing
CN109213297A (zh) 半导体装置以及半导体装置的控制方法
US10634714B2 (en) Apparatus and method for monitoring and predicting reliability of an integrated circuit
US7212064B1 (en) Methods and systems for measuring temperature using digital signals
JP2021532600A (ja) 複数の感知トランジスタに結合されたパワートランジスタ
BR112020002255B1 (pt) Detecção de corrente total de circuitos de carga distribuída independentes da distribuição de corrente usando-se promediação de tensão distribuída
JP2005210099A (ja) 半導体回路装置の設計方法、半導体回路の設計方法及び半導体回路装置
Dai et al. Study of thermal coupling effect in GaAs heterojunction bipolar transistors by using simple current mirror circuit
HK40018433A (en) Sensing total current of distributed load circuits using distributed voltage averaging circuits
HK40018433B (en) Sensing total current of distributed load circuits using distributed voltage averaging circuits

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5