TWI594538B - 使用電壓平均之分佈電壓網路電路及相關系統及方法 - Google Patents
使用電壓平均之分佈電壓網路電路及相關系統及方法 Download PDFInfo
- Publication number
- TWI594538B TWI594538B TW104126735A TW104126735A TWI594538B TW I594538 B TWI594538 B TW I594538B TW 104126735 A TW104126735 A TW 104126735A TW 104126735 A TW104126735 A TW 104126735A TW I594538 B TWI594538 B TW I594538B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- distributed
- circuit
- node
- nodes
- Prior art date
Links
- 238000012935 Averaging Methods 0.000 title claims description 80
- 238000000034 method Methods 0.000 title claims description 19
- 238000005259 measurement Methods 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 230000001413 cellular effect Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 30
- 238000010586 diagram Methods 0.000 description 14
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000012508 change request Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G01R31/3004—Current or voltage test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/003—Measuring mean values of current or voltage during a given time interval
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Measurement Of Current Or Voltage (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/482,456 US9494957B2 (en) | 2014-09-10 | 2014-09-10 | Distributed voltage network circuits employing voltage averaging, and related systems and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201618409A TW201618409A (zh) | 2016-05-16 |
| TWI594538B true TWI594538B (zh) | 2017-08-01 |
Family
ID=54072974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104126735A TWI594538B (zh) | 2014-09-10 | 2015-08-17 | 使用電壓平均之分佈電壓網路電路及相關系統及方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9494957B2 (enExample) |
| EP (1) | EP3191858B1 (enExample) |
| JP (1) | JP6702945B2 (enExample) |
| KR (1) | KR102331244B1 (enExample) |
| CN (1) | CN106662888B (enExample) |
| BR (1) | BR112017004693B1 (enExample) |
| CA (1) | CA2957035C (enExample) |
| ES (1) | ES2861265T3 (enExample) |
| TW (1) | TWI594538B (enExample) |
| WO (1) | WO2016039962A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10345834B2 (en) * | 2017-08-09 | 2019-07-09 | Qualcomm Incorporated | Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging |
| US11047946B2 (en) | 2018-05-08 | 2021-06-29 | Qualcomm Incorporated | Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance |
| US10958167B2 (en) | 2018-08-08 | 2021-03-23 | Qualcomm Incorporated | Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power |
| US11099238B2 (en) * | 2019-03-27 | 2021-08-24 | General Electric Company | Distributed control modules with built-in tests and control-preserving fault responses |
| CN117219145A (zh) * | 2020-08-06 | 2023-12-12 | 长江存储科技有限责任公司 | 用于三维存储器的多管芯峰值功率管理 |
| US11625054B2 (en) * | 2021-06-17 | 2023-04-11 | Novatek Microelectronics Corp. | Voltage to current converter of improved size and accuracy |
| US12153087B2 (en) | 2021-06-25 | 2024-11-26 | Ic Analytica, Llc | Apparatus and method for testing all test circuits on a wafer from a single test site |
| JP2023043717A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 半導体装置及び半導体集積回路 |
| US12066959B2 (en) * | 2022-05-12 | 2024-08-20 | Intel Corporation | Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die |
| US20230398878A1 (en) * | 2022-06-14 | 2023-12-14 | Ford Global Technologies, Llc | Control of gate drive resistance based on radio frequency interference |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3934209A (en) * | 1974-04-23 | 1976-01-20 | Minnesota Mining And Manufacturing Company | High voltage DC coupled amplifier |
| TW238415B (en) * | 1993-08-02 | 1995-01-11 | Advanced Micro Devices Inc | Test method for predicting hot-carrier induced leakage over time in short-channel igfets and products designed in accordance with test results |
| US6461880B1 (en) * | 2001-06-28 | 2002-10-08 | Advanced Micro Devices, Inc. | Method for monitoring silicide failures |
| US20090128120A1 (en) * | 2007-11-15 | 2009-05-21 | Seiko Epson Corporation | Reference voltage generation circuit, ad converter, da converter, and image processor |
| US7718448B1 (en) * | 2005-05-27 | 2010-05-18 | National Semiconductor Corporation | Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays |
| US20110068854A1 (en) * | 2008-11-25 | 2011-03-24 | Bernhard Helmut Engl | Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5038437A (enExample) * | 1973-08-08 | 1975-04-09 | ||
| DE3500676A1 (de) * | 1985-01-11 | 1986-07-17 | Robert Bosch Gmbh, 7000 Stuttgart | Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen |
| DE4237122C2 (de) | 1992-11-03 | 1996-12-12 | Texas Instruments Deutschland | Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors |
| US6191966B1 (en) | 1999-12-20 | 2001-02-20 | Texas Instruments Incorporated | Phase current sensor using inverter leg shunt resistor |
| DE10258766B4 (de) * | 2002-12-16 | 2005-08-25 | Infineon Technologies Ag | Schaltungsanordnung zur Steuerung und Erfassung des Laststroms durch eine Last |
| US6937178B1 (en) | 2003-05-15 | 2005-08-30 | Linear Technology Corporation | Gradient insensitive split-core digital to analog converter |
| US8582266B2 (en) | 2006-02-17 | 2013-11-12 | Broadcom Corporation | Current-monitoring apparatus |
| ATE522719T1 (de) * | 2008-04-29 | 2011-09-15 | Gm Global Tech Operations Inc | Verfahren und vorrichtung zum steuern von glühstiften in einem dieselmotor, insbesondere für motorfahrzeuge |
| WO2012147139A1 (ja) * | 2011-04-26 | 2012-11-01 | パナソニック株式会社 | 半導体集積回路システムおよびそれを備えた電子機器、電気製品、移動体 |
| DE102011108738B3 (de) | 2011-07-28 | 2012-12-06 | Texas Instruments Deutschland Gmbh | Laststromabtastschaltung und Verfahren |
| CN102955492B (zh) * | 2011-08-18 | 2014-12-10 | 祥硕科技股份有限公司 | 参考电流产生电路 |
| US8890601B2 (en) * | 2011-11-11 | 2014-11-18 | Qualcomm Incorporated | Method, system, and circuit with a driver output interface having a common mode connection coupled to a transistor bulk connection |
| FR2995696B1 (fr) | 2012-09-19 | 2015-05-29 | Commissariat Energie Atomique | Circuit de mesure de tension differentielle |
| WO2014126496A1 (en) * | 2013-02-14 | 2014-08-21 | Freescale Semiconductor, Inc. | Voltage regulator with improved load regulation |
-
2014
- 2014-09-10 US US14/482,456 patent/US9494957B2/en active Active
-
2015
- 2015-08-17 TW TW104126735A patent/TWI594538B/zh active
- 2015-08-20 KR KR1020177006358A patent/KR102331244B1/ko active Active
- 2015-08-20 CN CN201580047060.1A patent/CN106662888B/zh active Active
- 2015-08-20 WO PCT/US2015/046067 patent/WO2016039962A1/en not_active Ceased
- 2015-08-20 ES ES15762830T patent/ES2861265T3/es active Active
- 2015-08-20 EP EP15762830.6A patent/EP3191858B1/en active Active
- 2015-08-20 JP JP2017512369A patent/JP6702945B2/ja active Active
- 2015-08-20 CA CA2957035A patent/CA2957035C/en active Active
- 2015-08-20 BR BR112017004693-8A patent/BR112017004693B1/pt active IP Right Grant
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3934209A (en) * | 1974-04-23 | 1976-01-20 | Minnesota Mining And Manufacturing Company | High voltage DC coupled amplifier |
| TW238415B (en) * | 1993-08-02 | 1995-01-11 | Advanced Micro Devices Inc | Test method for predicting hot-carrier induced leakage over time in short-channel igfets and products designed in accordance with test results |
| US6461880B1 (en) * | 2001-06-28 | 2002-10-08 | Advanced Micro Devices, Inc. | Method for monitoring silicide failures |
| US7718448B1 (en) * | 2005-05-27 | 2010-05-18 | National Semiconductor Corporation | Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays |
| US20090128120A1 (en) * | 2007-11-15 | 2009-05-21 | Seiko Epson Corporation | Reference voltage generation circuit, ad converter, da converter, and image processor |
| US20110068854A1 (en) * | 2008-11-25 | 2011-03-24 | Bernhard Helmut Engl | Circuit, trim and layout for temperature compensation of metal resistors in semi-conductor chips |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3191858B1 (en) | 2021-01-20 |
| US9494957B2 (en) | 2016-11-15 |
| BR112017004693A2 (pt) | 2017-12-05 |
| EP3191858A1 (en) | 2017-07-19 |
| BR112017004693B1 (pt) | 2022-06-21 |
| US20160070277A1 (en) | 2016-03-10 |
| JP6702945B2 (ja) | 2020-06-03 |
| JP2017533410A (ja) | 2017-11-09 |
| KR20170056531A (ko) | 2017-05-23 |
| ES2861265T3 (es) | 2021-10-06 |
| CN106662888A (zh) | 2017-05-10 |
| CA2957035A1 (en) | 2016-03-17 |
| CA2957035C (en) | 2022-12-13 |
| KR102331244B1 (ko) | 2021-11-24 |
| TW201618409A (zh) | 2016-05-16 |
| CN106662888B (zh) | 2019-02-22 |
| WO2016039962A1 (en) | 2016-03-17 |
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