BR112017004693B1 - Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados - Google Patents

Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados Download PDF

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Publication number
BR112017004693B1
BR112017004693B1 BR112017004693-8A BR112017004693A BR112017004693B1 BR 112017004693 B1 BR112017004693 B1 BR 112017004693B1 BR 112017004693 A BR112017004693 A BR 112017004693A BR 112017004693 B1 BR112017004693 B1 BR 112017004693B1
Authority
BR
Brazil
Prior art keywords
voltage
node
circuit
distributed
load
Prior art date
Application number
BR112017004693-8A
Other languages
English (en)
Portuguese (pt)
Other versions
BR112017004693A2 (pt
Inventor
Burt Lee Price
Yeshwant Nagaraj Kolla
Dhaval Rajeshbhai Shah
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112017004693A2 publication Critical patent/BR112017004693A2/pt
Publication of BR112017004693B1 publication Critical patent/BR112017004693B1/pt

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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current 
    • G05F1/46Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30Marginal testing, e.g. by varying supply voltage
    • G01R31/3004Current or voltage test
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/003Measuring mean values of current or voltage during a given time interval

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
BR112017004693-8A 2014-09-10 2015-08-20 Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados BR112017004693B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/482,456 US9494957B2 (en) 2014-09-10 2014-09-10 Distributed voltage network circuits employing voltage averaging, and related systems and methods
US14/482,456 2014-09-10
PCT/US2015/046067 WO2016039962A1 (en) 2014-09-10 2015-08-20 Distributed voltage network circuits employing voltage averaging, and related systems and methods

Publications (2)

Publication Number Publication Date
BR112017004693A2 BR112017004693A2 (pt) 2017-12-05
BR112017004693B1 true BR112017004693B1 (pt) 2022-06-21

Family

ID=54072974

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112017004693-8A BR112017004693B1 (pt) 2014-09-10 2015-08-20 Circuitos de rede de tensão distribuída empregando média de tensão, e sistemas e métodos relacionados

Country Status (10)

Country Link
US (1) US9494957B2 (enExample)
EP (1) EP3191858B1 (enExample)
JP (1) JP6702945B2 (enExample)
KR (1) KR102331244B1 (enExample)
CN (1) CN106662888B (enExample)
BR (1) BR112017004693B1 (enExample)
CA (1) CA2957035C (enExample)
ES (1) ES2861265T3 (enExample)
TW (1) TWI594538B (enExample)
WO (1) WO2016039962A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10345834B2 (en) * 2017-08-09 2019-07-09 Qualcomm Incorporated Sensing total current of distributed load circuits independent of current distribution using distributed voltage averaging
US11047946B2 (en) 2018-05-08 2021-06-29 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance
US10958167B2 (en) 2018-08-08 2021-03-23 Qualcomm Incorporated Current sensing in an on-die direct current-direct current (DC-DC) converter for measuring delivered power
US11099238B2 (en) * 2019-03-27 2021-08-24 General Electric Company Distributed control modules with built-in tests and control-preserving fault responses
KR102639597B1 (ko) 2020-08-06 2024-02-23 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 메모리를 위한 멀티-다이 피크 전력 관리
US11625054B2 (en) * 2021-06-17 2023-04-11 Novatek Microelectronics Corp. Voltage to current converter of improved size and accuracy
US12153087B2 (en) 2021-06-25 2024-11-26 Ic Analytica, Llc Apparatus and method for testing all test circuits on a wafer from a single test site
JP2023043717A (ja) * 2021-09-16 2023-03-29 キオクシア株式会社 半導体装置及び半導体集積回路
US12066959B2 (en) * 2022-05-12 2024-08-20 Intel Corporation Provisioning a reference voltage based on an evaluation of a pseudo-precision resistor of an IC die
US20230398878A1 (en) * 2022-06-14 2023-12-14 Ford Global Technologies, Llc Control of gate drive resistance based on radio frequency interference

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US3934209A (en) * 1974-04-23 1976-01-20 Minnesota Mining And Manufacturing Company High voltage DC coupled amplifier
DE3500676A1 (de) * 1985-01-11 1986-07-17 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zur kontrolle von elektrischen verbrauchern in kraftfahrzeugen
DE4237122C2 (de) 1992-11-03 1996-12-12 Texas Instruments Deutschland Schaltungsanordnung zur Überwachung des Drainstromes eines Metall-Oxid-Halbleiter-Feldeffekttransistors
US5600578A (en) * 1993-08-02 1997-02-04 Advanced Micro Devices, Inc. Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results
US6191966B1 (en) 1999-12-20 2001-02-20 Texas Instruments Incorporated Phase current sensor using inverter leg shunt resistor
US6461880B1 (en) * 2001-06-28 2002-10-08 Advanced Micro Devices, Inc. Method for monitoring silicide failures
DE10258766B4 (de) * 2002-12-16 2005-08-25 Infineon Technologies Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststroms durch eine Last
US6937178B1 (en) 2003-05-15 2005-08-30 Linear Technology Corporation Gradient insensitive split-core digital to analog converter
US7718448B1 (en) 2005-05-27 2010-05-18 National Semiconductor Corporation Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays
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JP2009123926A (ja) * 2007-11-15 2009-06-04 Seiko Epson Corp 基準電圧発生回路、ad変換器、da変換器、および画像処理装置
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CN102246115B (zh) * 2008-11-25 2014-04-02 凌力尔特有限公司 用于半导体芯片内金属电阻器的温度补偿的电路、调修和布图
WO2012147139A1 (ja) * 2011-04-26 2012-11-01 パナソニック株式会社 半導体集積回路システムおよびそれを備えた電子機器、電気製品、移動体
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Also Published As

Publication number Publication date
CA2957035A1 (en) 2016-03-17
TWI594538B (zh) 2017-08-01
JP2017533410A (ja) 2017-11-09
KR20170056531A (ko) 2017-05-23
EP3191858A1 (en) 2017-07-19
ES2861265T3 (es) 2021-10-06
CA2957035C (en) 2022-12-13
CN106662888B (zh) 2019-02-22
BR112017004693A2 (pt) 2017-12-05
KR102331244B1 (ko) 2021-11-24
WO2016039962A1 (en) 2016-03-17
JP6702945B2 (ja) 2020-06-03
TW201618409A (zh) 2016-05-16
CN106662888A (zh) 2017-05-10
EP3191858B1 (en) 2021-01-20
US9494957B2 (en) 2016-11-15
US20160070277A1 (en) 2016-03-10

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 20/08/2015, OBSERVADAS AS CONDICOES LEGAIS