JP2017521865A - 高縦横比を有する凹部の上に絶縁膜を蒸着する方法 - Google Patents
高縦横比を有する凹部の上に絶縁膜を蒸着する方法 Download PDFInfo
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- 238000000151 deposition Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000010926 purge Methods 0.000 claims abstract description 35
- 238000000280 densification Methods 0.000 claims abstract description 25
- 239000012686 silicon precursor Substances 0.000 claims abstract description 21
- 239000006227 byproduct Substances 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000001179 sorption measurement Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 20
- 238000001039 wet etching Methods 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- -1 oxygen anion Chemical class 0.000 claims description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000002243 precursor Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 130
- 150000002500 ions Chemical class 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000306 component Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- HQSLRIXPNFGAQR-UHFFFAOYSA-N [SiH4].Cl Chemical compound [SiH4].Cl HQSLRIXPNFGAQR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- KMHJKRGRIJONSV-UHFFFAOYSA-N dioxygen(.1+) Chemical compound [O+]=O KMHJKRGRIJONSV-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 102220047090 rs6152 Human genes 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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Abstract
Description
Claims (9)
- 5:1以上の縦横比を有する凹部が形成された基板に対して前記凹部の上に絶縁膜を蒸着する方法において,
前記基板がローディングされたチェンバーの内部に,シリコン前駆体を注入して前記基板の上にシリコンを吸着する吸着ステップと,前記チェンバーの内部で未反応シリコン前駆体及び反応副産物を除去する第1パージステップと,前記チェンバーの内部に第1反応ソースを供給して吸着された前記シリコンを,シリコンが含まれる絶縁膜として形成する反応ステップと,前記チェンバーの内部で未反応の第1反応ソースと反応副産物を除去する第2パージステップと,を行う絶縁膜蒸着ステップと,
RF電源を印加して前記チェンバーの内部にプラズマ雰囲気を形成し,前記プラズマ雰囲気を利用して前記シリコンが含まれる絶縁膜を緻密にする緻密化ステップと,を含み,
前記RF電源の周波数は400kHz乃至2MHzである絶縁膜の蒸着方法。 - 前記絶縁膜の厚さが50Å(オングストローム)である場合,前記緻密化ステップは2乃至50秒間行われる請求項1記載の絶縁膜の蒸着方法。
- 前記RF電源の出力は100W乃至3kWであり,
前記RF電源の出力は前記RF電源の周波数の大きさに比例するように調節される請求項1記載の絶縁膜の蒸着方法。 - 前記プラズマ雰囲気はCCP方式によって形成される請求項1記載の絶縁膜の蒸着方法。
- 前記第1反応ソースは,O2,O3,N2,NH3を含む群から選択される一つ以上のガスである請求項1記載の絶縁膜の蒸着方法。
- 前記緻密化ステップは,
Ar,He,Kr及びXeを含む群から選択される一つ以上の点火ガス(ignition gas)を注入して前記プラズマ雰囲気を形成する請求項1記載の絶縁膜の蒸着方法。 - 前記緻密化ステップは,前記点火ガスと共にH2,O2,O3,N2及びNH3を含む群から選択される一つ以上の第2反応ソースを更に注入する請求項6記載の絶縁膜の蒸着方法。
- 前記反応ステップは,
O2雰囲気でプラズマを利用して形成されたO2 -(酸素陰イオン)又はO*(酸素ラジカル)を第1反応ソースとして使用する請求項1記載の絶縁膜の蒸着方法。 - 前記緻密化ステップを介して,前記絶縁膜は300:1BOEに対する150秒を基準に湿式エッチング率が熱CVDによる絶縁膜に比べ4倍以下である請求項1乃至請求項8いずれか1項記載の絶縁膜の蒸着方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2014-0089285 | 2014-07-15 | ||
KR1020140089285A KR101576637B1 (ko) | 2014-07-15 | 2014-07-15 | 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법 |
PCT/KR2015/006055 WO2016010267A1 (ko) | 2014-07-15 | 2015-06-16 | 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법 |
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JP2021153086A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
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KR102362534B1 (ko) * | 2014-12-08 | 2022-02-15 | 주성엔지니어링(주) | 기판 처리방법 |
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JP6767885B2 (ja) * | 2017-01-18 | 2020-10-14 | 東京エレクトロン株式会社 | 保護膜形成方法 |
JP6778144B2 (ja) * | 2017-04-25 | 2020-10-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
TWI845607B (zh) * | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
JP7473892B2 (ja) * | 2020-03-10 | 2024-04-24 | 株式会社昭和真空 | 蒸着源 |
US20220298636A1 (en) * | 2021-03-22 | 2022-09-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
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CN106489190B (zh) | 2019-06-25 |
TWI575603B (zh) | 2017-03-21 |
CN106489190A (zh) | 2017-03-08 |
US9818604B2 (en) | 2017-11-14 |
US20170148625A1 (en) | 2017-05-25 |
WO2016010267A1 (ko) | 2016-01-21 |
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