JP2017521265A - ナノワイヤの集合体を捕集および整列する方法 - Google Patents

ナノワイヤの集合体を捕集および整列する方法 Download PDF

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Publication number
JP2017521265A
JP2017521265A JP2016565213A JP2016565213A JP2017521265A JP 2017521265 A JP2017521265 A JP 2017521265A JP 2016565213 A JP2016565213 A JP 2016565213A JP 2016565213 A JP2016565213 A JP 2016565213A JP 2017521265 A JP2017521265 A JP 2017521265A
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Prior art keywords
nanowires
liquid
nanowire
interface
substrate
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Pending
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JP2016565213A
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Japanese (ja)
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JP2017521265A5 (enExample
Inventor
ウマル ナジーム，
ウマル ナジーム，
ホーハン ボーグストロム，
ホーハン ボーグストロム，
ジェイム カスティージョ−レオン，
ジェイム カスティージョ−レオン，
ペル ビクランド，
ペル ビクランド，
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Sol Voltaics AB
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Sol Voltaics AB
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Publication of JP2017521265A publication Critical patent/JP2017521265A/ja
Publication of JP2017521265A5 publication Critical patent/JP2017521265A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Materials Engineering (AREA)
  • Silicon Compounds (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
JP2016565213A 2014-04-29 2015-04-28 ナノワイヤの集合体を捕集および整列する方法 Pending JP2017521265A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1430057-8 2014-04-29
SE1430057 2014-04-29
PCT/IB2015/053094 WO2015166416A1 (en) 2014-04-29 2015-04-28 Methods of capturing and aligning an assembly of nanowires

Publications (2)

Publication Number Publication Date
JP2017521265A true JP2017521265A (ja) 2017-08-03
JP2017521265A5 JP2017521265A5 (enExample) 2018-06-14

Family

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JP2016565213A Pending JP2017521265A (ja) 2014-04-29 2015-04-28 ナノワイヤの集合体を捕集および整列する方法

Country Status (6)

Country Link
US (1) US10177264B2 (enExample)
EP (1) EP3137416A1 (enExample)
JP (1) JP2017521265A (enExample)
KR (1) KR102243642B1 (enExample)
CN (1) CN106415844A (enExample)
WO (1) WO2015166416A1 (enExample)

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US9786853B2 (en) 2014-02-11 2017-10-10 Wisconsin Alumni Research Foundation Floating evaporative assembly of aligned carbon nanotubes
WO2016071762A1 (en) 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
EP3260414A1 (en) * 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
WO2018122101A1 (en) 2016-12-30 2018-07-05 Sol Voltaics Ab Method for providing an aggregate of aligned nanowires at a liquid-liquid interface
US10873026B2 (en) * 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
KR102086740B1 (ko) 2017-10-20 2020-03-09 서강대학교산학협력단 모세관을 이용한 나노입자 단일층의 전이 방법 및 장치
WO2019078676A2 (ko) * 2017-10-20 2019-04-25 서강대학교산학협력단 모세관을 이용한 나노입자 단일층의 전이 방법 및 장치
EP3533900A1 (en) * 2018-03-02 2019-09-04 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Method and apparatus for forming a patterned layer of carbon
WO2020229855A1 (en) * 2019-05-13 2020-11-19 Gombos Akos Elemer Method and device for removing an ectoparasite from the skin
CN110265496A (zh) * 2019-06-25 2019-09-20 京东方科技集团股份有限公司 一种光敏元件及制作方法、指纹识别器件、显示装置
US11631814B2 (en) 2021-07-15 2023-04-18 Wisconsin Alumni Research Foundation Two-dimensional carbon nanotube liquid crystal films for wafer-scale electronics
WO2024246655A1 (en) 2023-05-18 2024-12-05 Alignedbio Ab Nanowire array containing nonstick layer and methods of making and using therof for analyte detection
KR102852137B1 (ko) * 2023-08-10 2025-08-29 한화솔루션 주식회사 와이어 정렬 장치

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JPS61283377A (ja) * 1985-06-06 1986-12-13 Seiko Epson Corp 有機薄膜の製造方法
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JPH02307571A (ja) * 1989-05-19 1990-12-20 Fuji Photo Film Co Ltd 固体粒子膜の形成方法
JP2005233637A (ja) * 2004-02-17 2005-09-02 Japan Science & Technology Agency 金ナノロッド薄膜によるラマン分光分析
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JP2012509760A (ja) * 2008-11-21 2012-04-26 コーニング インコーポレイテッド 自己集合プロセスを使用した管の被覆方法
WO2013154490A2 (en) * 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment

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Also Published As

Publication number Publication date
US20170047460A1 (en) 2017-02-16
CN106415844A (zh) 2017-02-15
US10177264B2 (en) 2019-01-08
WO2015166416A1 (en) 2015-11-05
KR102243642B1 (ko) 2021-04-22
EP3137416A1 (en) 2017-03-08
KR20160147005A (ko) 2016-12-21

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