CN106415844A - 捕获和对准纳米线的组合件的方法 - Google Patents

捕获和对准纳米线的组合件的方法 Download PDF

Info

Publication number
CN106415844A
CN106415844A CN201580028477.3A CN201580028477A CN106415844A CN 106415844 A CN106415844 A CN 106415844A CN 201580028477 A CN201580028477 A CN 201580028477A CN 106415844 A CN106415844 A CN 106415844A
Authority
CN
China
Prior art keywords
liquid
nano wire
methods according
interface
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580028477.3A
Other languages
English (en)
Chinese (zh)
Inventor
乌梅亚尔·纳西姆
约翰·博里斯特伦
热姆·卡斯蒂略-莱昂
佩尔·维克隆德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sol Voltaics AB
Original Assignee
Sol Voltaics AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sol Voltaics AB filed Critical Sol Voltaics AB
Publication of CN106415844A publication Critical patent/CN106415844A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Materials Engineering (AREA)
  • Silicon Compounds (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
CN201580028477.3A 2014-04-29 2015-04-28 捕获和对准纳米线的组合件的方法 Pending CN106415844A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1430057-8 2014-04-29
SE1430057 2014-04-29
PCT/IB2015/053094 WO2015166416A1 (en) 2014-04-29 2015-04-28 Methods of capturing and aligning an assembly of nanowires

Publications (1)

Publication Number Publication Date
CN106415844A true CN106415844A (zh) 2017-02-15

Family

ID=53177711

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580028477.3A Pending CN106415844A (zh) 2014-04-29 2015-04-28 捕获和对准纳米线的组合件的方法

Country Status (6)

Country Link
US (1) US10177264B2 (enExample)
EP (1) EP3137416A1 (enExample)
JP (1) JP2017521265A (enExample)
KR (1) KR102243642B1 (enExample)
CN (1) CN106415844A (enExample)
WO (1) WO2015166416A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110265496A (zh) * 2019-06-25 2019-09-20 京东方科技集团股份有限公司 一种光敏元件及制作方法、指纹识别器件、显示装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9786853B2 (en) 2014-02-11 2017-10-10 Wisconsin Alumni Research Foundation Floating evaporative assembly of aligned carbon nanotubes
WO2016071762A1 (en) 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
EP3260414A1 (en) * 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
WO2018122101A1 (en) 2016-12-30 2018-07-05 Sol Voltaics Ab Method for providing an aggregate of aligned nanowires at a liquid-liquid interface
US10873026B2 (en) * 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
KR102086740B1 (ko) 2017-10-20 2020-03-09 서강대학교산학협력단 모세관을 이용한 나노입자 단일층의 전이 방법 및 장치
WO2019078676A2 (ko) * 2017-10-20 2019-04-25 서강대학교산학협력단 모세관을 이용한 나노입자 단일층의 전이 방법 및 장치
EP3533900A1 (en) * 2018-03-02 2019-09-04 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Method and apparatus for forming a patterned layer of carbon
WO2020229855A1 (en) * 2019-05-13 2020-11-19 Gombos Akos Elemer Method and device for removing an ectoparasite from the skin
US11631814B2 (en) 2021-07-15 2023-04-18 Wisconsin Alumni Research Foundation Two-dimensional carbon nanotube liquid crystal films for wafer-scale electronics
WO2024246655A1 (en) 2023-05-18 2024-12-05 Alignedbio Ab Nanowire array containing nonstick layer and methods of making and using therof for analyte detection
KR102852137B1 (ko) * 2023-08-10 2025-08-29 한화솔루션 주식회사 와이어 정렬 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1624210A (zh) * 2004-11-01 2005-06-08 吉林大学 一种制备棒状、线状及六角形c60单晶的方法
US7105052B1 (en) * 2003-03-17 2006-09-12 The Florida State University Research Foundation, Inc. Ordered array of magnetized nanorods and associated methods
WO2013154490A2 (en) * 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60225636A (ja) * 1984-04-25 1985-11-09 Canon Inc 成膜方法
JPS60225635A (ja) * 1984-04-25 1985-11-09 Canon Inc 成膜方法
JPS61283377A (ja) * 1985-06-06 1986-12-13 Seiko Epson Corp 有機薄膜の製造方法
JPS62102852A (ja) * 1985-10-30 1987-05-13 Seiko Epson Corp 有機薄膜製造装置
JPH02307571A (ja) * 1989-05-19 1990-12-20 Fuji Photo Film Co Ltd 固体粒子膜の形成方法
WO2003091458A1 (en) * 2002-04-26 2003-11-06 The Penn State Research Foundation Integrated nanomechanical sensor array chips
JP2005233637A (ja) * 2004-02-17 2005-09-02 Japan Science & Technology Agency 金ナノロッド薄膜によるラマン分光分析
US7422696B2 (en) * 2004-02-20 2008-09-09 Northwestern University Multicomponent nanorods
JP4623440B2 (ja) * 2005-01-17 2011-02-02 康郎 新留 ナノ粒子配向薄膜の製造方法
JP2007139612A (ja) * 2005-11-18 2007-06-07 Fujifilm Corp 微細構造体、微細構造体の作製方法、ラマン分光法、及び装置
US7741647B2 (en) * 2006-05-22 2010-06-22 Hewlett-Packard Development Company Utilizing nanowire for different applications
US8389050B2 (en) * 2008-11-21 2013-03-05 Corning Incorporated Method of coating tubes using a self-assembly process
JP5264626B2 (ja) * 2009-06-12 2013-08-14 国立大学法人九州大学 金属微粒子を多層に形成した多層膜基板とその製造方法。
US8286803B2 (en) * 2009-06-18 2012-10-16 The Boeing Company Methods and systems for incorporating carbon nanotubes into thin film composite reverse osmosis membranes
JP5443864B2 (ja) * 2009-07-10 2014-03-19 国立大学法人九州大学 金属微粒子含有高分子フィルムとその製造方法および用途。
JP2011138804A (ja) * 2009-12-25 2011-07-14 Honda Motor Co Ltd ナノワイヤ太陽電池及びその製造方法
FR2984599B1 (fr) * 2011-12-20 2014-01-17 Commissariat Energie Atomique Procede de fabrication d'un micro- ou nano- fil semiconducteur, structure semiconductrice comportant un tel micro- ou nano- fil et procede de fabrication d'une structure semiconductrice
FR2988904B1 (fr) * 2012-04-02 2015-01-16 Commissariat Energie Atomique Structure semiconductrice optoelectronique a nanofils et procede de fabrication d'une telle structure
GB201211038D0 (en) * 2012-06-21 2012-08-01 Norwegian Univ Sci & Tech Ntnu Solar cells
US9537044B2 (en) * 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105052B1 (en) * 2003-03-17 2006-09-12 The Florida State University Research Foundation, Inc. Ordered array of magnetized nanorods and associated methods
CN1624210A (zh) * 2004-11-01 2005-06-08 吉林大学 一种制备棒状、线状及六角形c60单晶的方法
WO2013154490A2 (en) * 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110265496A (zh) * 2019-06-25 2019-09-20 京东方科技集团股份有限公司 一种光敏元件及制作方法、指纹识别器件、显示装置

Also Published As

Publication number Publication date
US20170047460A1 (en) 2017-02-16
JP2017521265A (ja) 2017-08-03
US10177264B2 (en) 2019-01-08
WO2015166416A1 (en) 2015-11-05
KR102243642B1 (ko) 2021-04-22
EP3137416A1 (en) 2017-03-08
KR20160147005A (ko) 2016-12-21

Similar Documents

Publication Publication Date Title
CN106415844A (zh) 捕获和对准纳米线的组合件的方法
US8216636B2 (en) Method of aligning nanotubes
US11364520B2 (en) Method for transferring nanowires from a fluid to a substrate surface
CN104380469B (zh) 纳米线官能化、分散和附着方法
US10692719B2 (en) Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
CN110176541A (zh) 一种基于对流组装沉积法的硫化铅胶体量子点太阳能电池及制备方法
KR101838637B1 (ko) 나노입자-그래핀 산화물 복합체 박막 및 그 제조방법
HK1229532A1 (en) Methods of capturing and aligning an assembly of nanowires
Beheshti et al. Reduction of nanowire agglomeration via an intermediate membrane in nanowires preparation for nanosensors application
KR20100036447A (ko) 기판 상에서 표면 에너지를 이용한 나노 와이어 성장 방법
Oh et al. Silicon nanowire bridge arrays with dramatically improved yields enabled by gold colloids functionalized with HF acid and poly-L-lysine
HK1237126A1 (en) Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
Park et al. Capsulation of carbon nanotubes on top of colloidally templated and electropolymerized polythiophene arrays
KR101001150B1 (ko) 나노 소재 형성 방법
TW201829294A (zh) 提供對準的奈米線之聚集體的方法
Kim et al. Effects of Tilt Angle, DNA Concentration, and Surface Potential on Directed Alignment of DNA Molecule for the Application to Nanodevices
JP6845850B2 (ja) 半導体ナノ構造体のための平坦な自由接触面を製造するための方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1229532

Country of ref document: HK

WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20170215

WD01 Invention patent application deemed withdrawn after publication
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1229532

Country of ref document: HK