KR102243642B1 - 나노와이어 조립체의 캡처 및 정렬 방법 - Google Patents

나노와이어 조립체의 캡처 및 정렬 방법 Download PDF

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KR102243642B1
KR102243642B1 KR1020167033152A KR20167033152A KR102243642B1 KR 102243642 B1 KR102243642 B1 KR 102243642B1 KR 1020167033152 A KR1020167033152 A KR 1020167033152A KR 20167033152 A KR20167033152 A KR 20167033152A KR 102243642 B1 KR102243642 B1 KR 102243642B1
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nanowires
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liquid
nanowire
interface
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KR20160147005A (ko
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우메르 나심
요한 보르그스트롬
하이메 카스틸로-레옹
페르 비크룬드
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솔 발테익스 에이비
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    • H01L29/0676
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10D62/118Nanostructure semiconductor bodies
    • H10D62/119Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • H01L29/20
    • H01L29/22
    • H01L31/035227
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437Quantum wires or nanorods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/18Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202Langmuir Blodgett films (LB films)
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/544Solar cells from Group III-V materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Materials Engineering (AREA)
  • Silicon Compounds (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
KR1020167033152A 2014-04-29 2015-04-28 나노와이어 조립체의 캡처 및 정렬 방법 Active KR102243642B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE1430057-8 2014-04-29
SE1430057 2014-04-29
PCT/IB2015/053094 WO2015166416A1 (en) 2014-04-29 2015-04-28 Methods of capturing and aligning an assembly of nanowires

Publications (2)

Publication Number Publication Date
KR20160147005A KR20160147005A (ko) 2016-12-21
KR102243642B1 true KR102243642B1 (ko) 2021-04-22

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Country Status (6)

Country Link
US (1) US10177264B2 (enExample)
EP (1) EP3137416A1 (enExample)
JP (1) JP2017521265A (enExample)
KR (1) KR102243642B1 (enExample)
CN (1) CN106415844A (enExample)
WO (1) WO2015166416A1 (enExample)

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US9786853B2 (en) 2014-02-11 2017-10-10 Wisconsin Alumni Research Foundation Floating evaporative assembly of aligned carbon nanotubes
WO2016071762A1 (en) 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
EP3260414A1 (en) * 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
WO2018122101A1 (en) 2016-12-30 2018-07-05 Sol Voltaics Ab Method for providing an aggregate of aligned nanowires at a liquid-liquid interface
US10873026B2 (en) * 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
KR102086740B1 (ko) 2017-10-20 2020-03-09 서강대학교산학협력단 모세관을 이용한 나노입자 단일층의 전이 방법 및 장치
WO2019078676A2 (ko) * 2017-10-20 2019-04-25 서강대학교산학협력단 모세관을 이용한 나노입자 단일층의 전이 방법 및 장치
EP3533900A1 (en) * 2018-03-02 2019-09-04 Stichting Nederlandse Wetenschappelijk Onderzoek Instituten Method and apparatus for forming a patterned layer of carbon
WO2020229855A1 (en) * 2019-05-13 2020-11-19 Gombos Akos Elemer Method and device for removing an ectoparasite from the skin
CN110265496A (zh) * 2019-06-25 2019-09-20 京东方科技集团股份有限公司 一种光敏元件及制作方法、指纹识别器件、显示装置
US11631814B2 (en) 2021-07-15 2023-04-18 Wisconsin Alumni Research Foundation Two-dimensional carbon nanotube liquid crystal films for wafer-scale electronics
WO2024246655A1 (en) 2023-05-18 2024-12-05 Alignedbio Ab Nanowire array containing nonstick layer and methods of making and using therof for analyte detection
KR102852137B1 (ko) * 2023-08-10 2025-08-29 한화솔루션 주식회사 와이어 정렬 장치

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WO2013154490A2 (en) * 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment

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WO2013154490A2 (en) * 2012-04-12 2013-10-17 Sol Voltaics Ab Methods of nanowire functionalization, dispersion and attachment

Also Published As

Publication number Publication date
US20170047460A1 (en) 2017-02-16
JP2017521265A (ja) 2017-08-03
CN106415844A (zh) 2017-02-15
US10177264B2 (en) 2019-01-08
WO2015166416A1 (en) 2015-11-05
EP3137416A1 (en) 2017-03-08
KR20160147005A (ko) 2016-12-21

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