JP6845850B2 - 半導体ナノ構造体のための平坦な自由接触面を製造するための方法 - Google Patents
半導体ナノ構造体のための平坦な自由接触面を製造するための方法 Download PDFInfo
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Description
図2は、[非特許文献2]に記載の方法に従い平坦化及び接触された、窒化インジウムナノワイヤの写真を示す。この際、このナノワイヤはHSQ中に完全に埋設され、次いで反応性ドライエッチングを用いて再び暴露され、そうして上側で電気接触できるようにされたものである。その結果、コバルトからなるこの金属ストリップは小さな湾曲しか持たず、例えば図1(a)のような遮断は示さない。そうして、図1(b)に示すように、ナノワイヤに対する接触箇所での中間的なドメイン形成を伴わない、二つの別個の状態間での磁化方向の直接のスイッチングが可能となる。
[2]Heedt et al.,Nano Lett.12,4437,2012
[3]Cui et al.,Appl.Phys.Express 7,085001,2014
[4]Chung et al.,IEEE Electron Device Lett.30,2,2009
[5]Chung et al.,IEEE Electron Device Lett.30,10,2009
[6]Sheng et al.,Nanotechnology 24,0252014,2013
[7]Floehr et al.,Rev.Sci.Instrum.82,113705,2011
[8]Ferry,Science 319,579−580,2008
本願は特許請求の範囲に記載の発明に係るものであるが、本願の開示は以下も包含する:
1.
ナノ構造体の平坦化のための方法において、
−出発基材(1)の表面上に少なくとも一つのナノ構造体(2)を配置し、
−前記出発基材(1)の同じ表面上に、前記少なくとも一つのナノ構造体(2)を埋設する第一の層(3)を施与し、
−及び、前記第一の層(3)の上に、標的基材(5)を施与し、
−この際、それに次いで、出発基材(1)を第一の層(3)から、それに埋設されている前記少なくとも一つのナノ構造体(2)が平坦な自由表面を有するように分離する、
方法であって、
−前記出発基材(1)上への前記少なくとも一つのナノ構造体(2)の施与の前に、追加的な層(6)を、前記出発基材(1)の表面上に施与すること、
−及び、溶剤を用いて、前記第一の層(3)からの出発基材(1)の剥離を行う、
ことを特徴とする前記方法。
2.
第四化学主族の元素半導体、第三及び第五化学主族の化合物半導体、または第二及び第六化学主族の化合物半導体を含むナノ構造体(2)が使用されることを特徴とする、上記1に記載の方法。
3.
前記標的基材(5)が、第二の層(4)を介して上記第一の層(3)上に施与される、上記1または2に記載の方法。
4.
前記第二の層(4)が水素−シルセスキオキサン(HSQ)を含む、上記3に記載の方法。
5.
前記追加的な層(6)が、溶剤中に溶解可能な材料を含む、上記1〜4のいずれか一つに記載の方法。
6.
前記追加的な層(6)が、ポリメチルメタクリレート(PMMA)、メチルメタクリレートとメタクリル酸とのポリマー(コポリマーPMMA/MA)、または光学的フォトレジストを含むことを特徴とする、上記1〜5のいずれか一つに記載の方法。
7.
前記追加的な層(6)が、複数のステップで、前記転写基材(1)の表面上に施与される、上記1〜6のいずれか一つに記載の方法。
8.
前記追加的な層(6)が先ず温度処理され、その後に前記少なくとも一つのナノ構造体(2)が施与される、上記1〜7のいずれか一つに記載の方法。
9.
前記少なくとも一つのナノ構造体(2)を埋設する前記第一の層(3)が、スピンコート可能なガラスまたは流動性酸化物、特に水素−シルセスキオキサン(HSQ)を含むことを特徴とする、上記1〜8のいずれか一つに記載の方法。
10.
前記ナノ構造体(2)を埋設する前記第一の層(3)が、先ず構造化され、その後に前記構造化された層上に前記第二の基材(5)が施与される、上記1〜9のいずれか一つに記載の方法。
11.
前記第一の層(3)からの前記転写基材(1)の剥離が、含アセトン溶剤またはシクロペンタノンまたはジメチルスルホキシドを用いて行われる、上記1〜10のいずれか一つに記載の方法。
12.
前記ナノ構造体がエピタキシャル的に生成される、上記1〜11のいずれか一つに記載の方法。
13.
前記出発基材上への前記ナノ構造体の配置が、前記ナノ構造体を含む分散物を用いてまたはマイクロマニピュレータにより行われる、上記1〜12のいずれか一つに記載の方法。
14.
ナノ構造体として、ナノワイヤがまたは結合されたナノワイヤからなるネットワークが配置される、上記1〜13のいずれか一つに記載の方法。
15.
前記第一の層(3)及びその中に埋設された前記少なくとも一つのナノ構造体(2)を備えた生じた前記の第二の基材(5)が、次いで、上記1に記載の方法において標的基材として使用され、そうして、埋設されたナノ構造体を含む複数の互いに重ねて配置された層の系を生成でき、この際、これらのナノ構造体を垂直なスルーホール接触によって接続できる、上記1〜14のいずれか一つに記載の方法。
Claims (14)
- 埋設された接触可能なナノ構造体を使用した平坦な自由表面の製造のための方法において、
−出発基材(1)の表面上に少なくとも一つのナノ構造体(2)を配置し、
−前記出発基材(1)の同じ表面上に、前記少なくとも一つのナノ構造体(2)を埋設する第一の層(3)を施与し、
−及び、前記第一の層(3)の上に、標的基材(5)を施与し、
−この際、前記標的基材(5)の施与に次いで、出発基材(1)を第一の層(3)から、前記第一の層(3)中に埋設されている前記少なくとも一つのナノ構造体(2)が前記平坦な自由表面を有するように分離する、
方法であって、
−前記出発基材(1)上への前記少なくとも一つのナノ構造体(2)の施与の前に、追加的な層(6)を、前記出発基材(1)の表面上に施与すること、
−及び、溶剤を用いて、前記第一の層(3)からの出発基材(1)の剥離を行い、
−及び前記ナノ構造体(2)を埋設する前記第一の層(3)が、先ずリソグラフィを用いて選択的に現像及び構造化され、その後に前記構造化された第一の層(3)上に前記標的基材(5)が施与される、
ことを特徴とする前記方法。 - 第四化学主族の元素半導体、第三及び第五化学主族の化合物半導体、または第二及び第六化学主族の化合物半導体を含むナノ構造体(2)が使用されることを特徴とする、請求項1に記載の方法。
- 前記標的基材(5)が、第二の層(4)を介して上記第一の層(3)上に施与される、請求項1または2に記載の方法。
- 前記第二の層(4)が水素−シルセスキオキサン(HSQ)を含む、請求項3に記載の方法。
- 前記追加的な層(6)が、溶剤中に溶解可能な材料を含む、請求項1〜4のいずれか一つに記載の方法。
- 前記追加的な層(6)が、ポリメチルメタクリレート(PMMA)、メチルメタクリレートとメタクリル酸とのポリマー(コポリマーPMMA/MA)、または光学的フォトレジストを含むことを特徴とする、請求項1〜5のいずれか一つに記載の方法。
- 前記追加的な層(6)が、複数のステップで、前記出発基材(1)の表面上に一つの層として施与される、請求項1〜6のいずれか一つに記載の方法。
- 前記追加的な層(6)が先ずベークされ、その後に前記少なくとも一つのナノ構造体(2)が施与される、請求項1〜7のいずれか一つに記載の方法。
- 前記少なくとも一つのナノ構造体(2)を埋設する前記第一の層(3)が、スピンコート可能なガラスまたは流動性酸化物、特に水素−シルセスキオキサン(HSQ)を含むことを特徴とする、請求項1〜8のいずれか一つに記載の方法。
- 前記第一の層(3)からの前記出発基材(1)の剥離が、含アセトン溶剤またはシクロペンタノンまたはジメチルスルホキシドを用いて行われる、請求項1〜9のいずれか一つに記載の方法。
- 前記ナノ構造体(2)がエピタキシャル的に生成される、請求項1〜10のいずれか一つに記載の方法。
- 前記出発基材(1)上への前記ナノ構造体(2)の配置が、前記ナノ構造体(2)を含む分散物を用いてまたはマイクロマニピュレータにより行われる、請求項1〜11のいずれか一つに記載の方法。
- 前記ナノ構造体(2)として、ナノワイヤがまたは結合されたナノワイヤからなるネットワークが配置される、請求項1〜12のいずれか一つに記載の方法。
- 第一の層(3)の上に標的基材(5)を施与する際に、前記標的基材(5)が、各々請求項1に記載の方法に従い形成された第一の層(3)及びその中に埋設された少なくとも一つのナノ構造体(2)を備え、
この際、第一の層(3)の上への標的基材(5)の前記施与は、前記出発基材(1)上の第一の層(3)と前記標的基材(5)上の第一の層(3)とが向かい合うように行われ、
この際、これらの両第一の層(3)中に埋設されたナノ構造体(2)は垂直なスルーホール接触によって接続できる、請求項1〜13のいずれか一つに記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
KR100362377B1 (ko) * | 2000-12-05 | 2002-11-23 | 한국전자통신연구원 | 탄소 나노 튜브를 이용한 전계 방출 소자 및 그 제조 방법 |
US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US7569470B2 (en) * | 2005-05-27 | 2009-08-04 | The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Method of forming conducting nanowires |
DE602006018976D1 (de) * | 2005-09-29 | 2011-01-27 | Dow Corning | Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten |
US20070269750A1 (en) * | 2006-05-19 | 2007-11-22 | Eastman Kodak Company | Colored masking for forming transparent structures |
US8846143B2 (en) * | 2006-07-10 | 2014-09-30 | California Institute Of Technology | Method for selectively anchoring and exposing large numbers of nanoscale structures |
US8130007B2 (en) * | 2006-10-16 | 2012-03-06 | Formfactor, Inc. | Probe card assembly with carbon nanotube probes having a spring mechanism therein |
US20080134961A1 (en) * | 2006-11-03 | 2008-06-12 | Zhenan Bao | Single-crystal organic semiconductor materials and approaches therefor |
EP2183788A1 (en) * | 2007-08-28 | 2010-05-12 | California Institute of Technology | Polymer-embedded semiconductor rod arrays |
KR101272012B1 (ko) * | 2007-11-28 | 2013-06-07 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
CN101178957B (zh) * | 2007-12-04 | 2011-07-27 | 河南科技大学 | 铜合金接触线的制备方法 |
US8470701B2 (en) | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
US8810009B2 (en) * | 2008-04-27 | 2014-08-19 | The Board Of Trustees Of The University Of Illinois | Method of fabricating a planar semiconductor nanowire |
WO2010010838A1 (ja) * | 2008-07-25 | 2010-01-28 | コニカミノルタホールディングス株式会社 | 透明電極および透明電極の製造方法 |
WO2010022064A1 (en) * | 2008-08-21 | 2010-02-25 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
US8648525B2 (en) * | 2009-06-24 | 2014-02-11 | Konica Minolta Holdings, Inc. | Transparent electrode, purifying method of conductive fibers employed in transparent electrode and organic electroluminescence element |
US9748421B2 (en) * | 2009-12-04 | 2017-08-29 | The Board Of Trustees Of The Leland Stanford Junior University | Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (CNFET), transparent electrodes, and three-dimensional integration of CNFETs |
US8974967B2 (en) * | 2009-12-21 | 2015-03-10 | The Board Of Trustees Of The Leland Stanford Junior Univerity | Nanotube-based nanomaterial membrane |
JP2011134856A (ja) * | 2009-12-24 | 2011-07-07 | Toshiba Corp | パターン形成方法 |
CA2828468A1 (en) * | 2010-02-27 | 2011-09-01 | Innova Dynamics, Inc. | Structures with surface-embedded additives and related manufacturing methods |
CN101905448B (zh) * | 2010-06-23 | 2013-05-22 | 清华大学 | 一种用于化学机械平坦化的抛光垫及其制造方法 |
US8518736B2 (en) * | 2010-12-29 | 2013-08-27 | Georgia Tech Research Corporation | Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates |
US8492208B1 (en) * | 2012-01-05 | 2013-07-23 | International Business Machines Corporation | Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process |
US9780335B2 (en) * | 2012-07-20 | 2017-10-03 | 3M Innovative Properties Company | Structured lamination transfer films and methods |
US8823075B2 (en) * | 2012-11-30 | 2014-09-02 | Sandisk Technologies Inc. | Select gate formation for nanodot flat cell |
CN103077888B (zh) * | 2013-01-11 | 2015-07-01 | 西安交通大学 | 一种用于在单纳米线上制备电极的方法 |
CN103779400A (zh) * | 2013-06-09 | 2014-05-07 | 国家纳米科学中心 | 一种复合电极及其制备方法 |
KR102074942B1 (ko) * | 2013-07-29 | 2020-02-10 | 삼성전자 주식회사 | 비휘발성 메모리 트랜지스터 및 이를 포함하는 소자 |
US9090454B2 (en) * | 2013-08-27 | 2015-07-28 | Freescale Semiconductor, Inc. | Sequential wafer bonding |
US20150179877A1 (en) * | 2013-12-20 | 2015-06-25 | LuxVue Technology Corporation | Nanowire device |
US9246134B2 (en) * | 2014-01-20 | 2016-01-26 | 3M Innovative Properties Company | Lamination transfer films for forming articles with engineered voids |
US9583533B2 (en) * | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
KR102301276B1 (ko) * | 2014-04-09 | 2021-09-14 | 다우 실리콘즈 코포레이션 | 소수성 용품 |
CN104282575B (zh) * | 2014-09-26 | 2017-06-06 | 北京大学 | 一种制备纳米尺度场效应晶体管的方法 |
CN104485284B (zh) * | 2014-12-24 | 2017-06-27 | 北京大学 | 一种可控阵列纳米线及其场效应晶体管的制备方法 |
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