JP2019504465A - 半導体ナノ構造体のための平坦な自由接触面を製造するための方法 - Google Patents
半導体ナノ構造体のための平坦な自由接触面を製造するための方法 Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 83
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 239000002070 nanowire Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000002904 solvent Substances 0.000 claims abstract description 29
- 238000012546 transfer Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims description 49
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 20
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 73
- 235000012431 wafers Nutrition 0.000 description 27
- 239000011247 coating layer Substances 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 13
- 238000000609 electron-beam lithography Methods 0.000 description 12
- 230000010354 integration Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 5
- 238000007872 degassing Methods 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 239000003550 marker Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001127 nanoimprint lithography Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000013518 transcription Methods 0.000 description 2
- 230000035897 transcription Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004159 blood analysis Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
図2は、[非特許文献2]に記載の方法に従い平坦化及び接触された、窒化インジウムナノワイヤの写真を示す。この際、このナノワイヤはHSQ中に完全に埋設され、次いで反応性ドライエッチングを用いて再び暴露され、そうして上側で電気接触できるようにされたものである。その結果、コバルトからなるこの金属ストリップは小さな湾曲しか持たず、例えば図1(a)のような遮断は示さない。そうして、図1(b)に示すように、ナノワイヤに対する接触箇所での中間的なドメイン形成を伴わない、二つの別個の状態間での磁化方向の直接のスイッチングが可能となる。
[1]Zimmler et al.,Nano Lett.8,1695,2008
[2]Heedt et al.,Nano Lett.12,4437,2012
[3]Cui et al.,Appl.Phys.Express 7,085001,2014
[4]Chung et al.,IEEE Electron Device Lett.30,2,2009
[5]Chung et al.,IEEE Electron Device Lett.30,10,2009
[6]Sheng et al.,Nanotechnology 24,0252014,2013
[7]Floehr et al.,Rev.Sci.Instrum.82,113705,2011
[8]Ferry,Science 319,579−580,2008
Claims (15)
- ナノ構造体の平坦化のための方法において、
−出発基材(1)の表面上に少なくとも一つのナノ構造体(2)を配置し、
−前記出発基材(1)の同じ表面上に、前記少なくとも一つのナノ構造体(2)を埋設する第一の層(3)を施与し、
−及び、前記第一の層(3)の上に、標的基材(5)を施与し、
−この際、それに次いで、出発基材(1)を第一の層(3)から、それに埋設されている前記少なくとも一つのナノ構造体(2)が平坦な自由表面を有するように分離する、
方法であって、
−前記出発基材(1)上への前記少なくとも一つのナノ構造体(2)の施与の前に、追加的な層(6)を、前記出発基材(1)の表面上に施与すること、
−及び、溶剤を用いて、前記第一の層(3)からの出発基材(1)の剥離を行う、
ことを特徴とする前記方法。 - 第四化学主族の元素半導体、第三及び第五化学主族の化合物半導体、または第二及び第六化学主族の化合物半導体を含むナノ構造体(2)が使用されることを特徴とする、請求項1に記載の方法。
- 前記標的基材(5)が、第二の層(4)を介して上記第一の層(3)上に施与される、請求項1または2に記載の方法。
- 前記第二の層(4)が水素−シルセスキオキサン(HSQ)を含む、請求項3に記載の方法。
- 前記追加的な層(6)が、溶剤中に溶解可能な材料を含む、請求項1〜4のいずれか一つに記載の方法。
- 前記追加的な層(6)が、ポリメチルメタクリレート(PMMA)、メチルメタクリレートとメタクリル酸とのポリマー(コポリマーPMMA/MA)、または光学的フォトレジストを含むことを特徴とする、請求項1〜5のいずれか一つに記載の方法。
- 前記追加的な層(6)が、複数のステップで、前記転写基材(1)の表面上に施与される、請求項1〜6のいずれか一つに記載の方法。
- 前記追加的な層(6)が先ず温度処理され、その後に前記少なくとも一つのナノ構造体(2)が施与される、請求項1〜7のいずれか一つに記載の方法。
- 前記少なくとも一つのナノ構造体(2)を埋設する前記第一の層(3)が、スピンコート可能なガラスまたは流動性酸化物、特に水素−シルセスキオキサン(HSQ)を含むことを特徴とする、請求項1〜8のいずれか一つに記載の方法。
- 前記ナノ構造体(2)を埋設する前記第一の層(3)が、先ず構造化され、その後に前記構造化された層上に前記第二の基材(5)が施与される、請求項1〜9のいずれか一つに記載の方法。
- 前記第一の層(3)からの前記転写基材(1)の剥離が、含アセトン溶剤またはシクロペンタノンまたはジメチルスルホキシドを用いて行われる、請求項1〜10のいずれか一つに記載の方法。
- 前記ナノ構造体がエピタキシャル的に生成される、請求項1〜11のいずれか一つに記載の方法。
- 前記出発基材上への前記ナノ構造体の配置が、前記ナノ構造体を含む分散物を用いてまたはマイクロマニピュレータにより行われる、請求項1〜12のいずれか一つに記載の方法。
- ナノ構造体として、ナノワイヤがまたは結合されたナノワイヤからなるネットワークが配置される、請求項1〜13のいずれか一つに記載の方法。
- 前記第一の層(3)及びその中に埋設された前記少なくとも一つのナノ構造体(2)を備えた生じた前記の第二の基材(5)が、次いで、請求項1に記載の方法において標的基材として使用され、そうして、埋設されたナノ構造体を含む複数の互いに重ねて配置された層の系を生成でき、この際、これらのナノ構造体を垂直なスルーホール接触によって接続できる、請求項1〜14のいずれか一つに記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
KR100362377B1 (ko) * | 2000-12-05 | 2002-11-23 | 한국전자통신연구원 | 탄소 나노 튜브를 이용한 전계 방출 소자 및 그 제조 방법 |
US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US7569470B2 (en) * | 2005-05-27 | 2009-08-04 | The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Method of forming conducting nanowires |
EP1940989B1 (en) * | 2005-09-29 | 2010-12-15 | Dow Corning Corporation | Method of releasing high temperature films and/or devices from metallic substrates |
US20070269750A1 (en) * | 2006-05-19 | 2007-11-22 | Eastman Kodak Company | Colored masking for forming transparent structures |
US8846143B2 (en) * | 2006-07-10 | 2014-09-30 | California Institute Of Technology | Method for selectively anchoring and exposing large numbers of nanoscale structures |
US8130007B2 (en) * | 2006-10-16 | 2012-03-06 | Formfactor, Inc. | Probe card assembly with carbon nanotube probes having a spring mechanism therein |
US20080134961A1 (en) * | 2006-11-03 | 2008-06-12 | Zhenan Bao | Single-crystal organic semiconductor materials and approaches therefor |
EP2183789A1 (en) | 2007-08-28 | 2010-05-12 | California Institute of Technology | Method for reuse of wafers for growth of vertically-aligned wire arrays |
KR101272012B1 (ko) | 2007-11-28 | 2013-06-07 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
CN101178957B (zh) * | 2007-12-04 | 2011-07-27 | 河南科技大学 | 铜合金接触线的制备方法 |
US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
WO2009134687A2 (en) * | 2008-04-27 | 2009-11-05 | The Board Of Trustees Of The University Of Illinois | Method of fabricating a planar semiconductor nanowire |
US8198796B2 (en) * | 2008-07-25 | 2012-06-12 | Konica Minolta Holdings, Inc. | Transparent electrode and production method of same |
WO2010022064A1 (en) * | 2008-08-21 | 2010-02-25 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
WO2010150619A1 (ja) | 2009-06-24 | 2010-12-29 | コニカミノルタホールディングス株式会社 | 透明電極、該透明電極に用いられる導電性繊維の精製方法、及び有機エレクトロルミネッセンス素子 |
US9748421B2 (en) * | 2009-12-04 | 2017-08-29 | The Board Of Trustees Of The Leland Stanford Junior University | Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (CNFET), transparent electrodes, and three-dimensional integration of CNFETs |
US8974967B2 (en) * | 2009-12-21 | 2015-03-10 | The Board Of Trustees Of The Leland Stanford Junior Univerity | Nanotube-based nanomaterial membrane |
JP2011134856A (ja) * | 2009-12-24 | 2011-07-07 | Toshiba Corp | パターン形成方法 |
WO2011106730A2 (en) * | 2010-02-27 | 2011-09-01 | Innova Dynamics, Inc . | Structures with surface-embedded additives and related manufacturing methods |
CN101905448B (zh) * | 2010-06-23 | 2013-05-22 | 清华大学 | 一种用于化学机械平坦化的抛光垫及其制造方法 |
US8518736B2 (en) | 2010-12-29 | 2013-08-27 | Georgia Tech Research Corporation | Growth and transfer of monolithic horizontal nanowire superstructures onto flexible substrates |
US8492208B1 (en) * | 2012-01-05 | 2013-07-23 | International Business Machines Corporation | Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process |
US9780335B2 (en) * | 2012-07-20 | 2017-10-03 | 3M Innovative Properties Company | Structured lamination transfer films and methods |
US8823075B2 (en) * | 2012-11-30 | 2014-09-02 | Sandisk Technologies Inc. | Select gate formation for nanodot flat cell |
CN103077888B (zh) * | 2013-01-11 | 2015-07-01 | 西安交通大学 | 一种用于在单纳米线上制备电极的方法 |
CN103779400A (zh) * | 2013-06-09 | 2014-05-07 | 国家纳米科学中心 | 一种复合电极及其制备方法 |
KR102074942B1 (ko) * | 2013-07-29 | 2020-02-10 | 삼성전자 주식회사 | 비휘발성 메모리 트랜지스터 및 이를 포함하는 소자 |
US9090454B2 (en) * | 2013-08-27 | 2015-07-28 | Freescale Semiconductor, Inc. | Sequential wafer bonding |
US20150179877A1 (en) * | 2013-12-20 | 2015-06-25 | LuxVue Technology Corporation | Nanowire device |
US9246134B2 (en) * | 2014-01-20 | 2016-01-26 | 3M Innovative Properties Company | Lamination transfer films for forming articles with engineered voids |
US9583533B2 (en) * | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
DE112015001719T5 (de) | 2014-04-09 | 2016-12-29 | Dow Corning Corporation | Hydrophober Artikel |
CN104282575B (zh) * | 2014-09-26 | 2017-06-06 | 北京大学 | 一种制备纳米尺度场效应晶体管的方法 |
CN104485284B (zh) * | 2014-12-24 | 2017-06-27 | 北京大学 | 一种可控阵列纳米线及其场效应晶体管的制备方法 |
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