JP2017520906A - 貫通ガラスバイアの作製のための接合材料のエッチバックプロセス - Google Patents

貫通ガラスバイアの作製のための接合材料のエッチバックプロセス Download PDF

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Publication number
JP2017520906A
JP2017520906A JP2016565202A JP2016565202A JP2017520906A JP 2017520906 A JP2017520906 A JP 2017520906A JP 2016565202 A JP2016565202 A JP 2016565202A JP 2016565202 A JP2016565202 A JP 2016565202A JP 2017520906 A JP2017520906 A JP 2017520906A
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JP
Japan
Prior art keywords
bonding layer
substrate
holes
carrier
vias
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Pending
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JP2016565202A
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English (en)
Japanese (ja)
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JP2017520906A5 (enExample
Inventor
ツァイ,チー−ウェイ
カイ ワン,ボル
カイ ワン,ボル
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Corning Inc
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Corning Inc
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Application filed by Corning Inc filed Critical Corning Inc
Publication of JP2017520906A publication Critical patent/JP2017520906A/ja
Publication of JP2017520906A5 publication Critical patent/JP2017520906A5/ja
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H10P72/74
    • H10W70/095
    • H10W70/635
    • H10W70/65
    • H10W70/66
    • H10W70/69
    • H10W70/692
    • H10P72/7412
    • H10P72/7424
    • H10P72/743
    • H10P72/744

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)
JP2016565202A 2014-04-30 2015-04-29 貫通ガラスバイアの作製のための接合材料のエッチバックプロセス Pending JP2017520906A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461986370P 2014-04-30 2014-04-30
US61/986,370 2014-04-30
PCT/US2015/028200 WO2015168236A1 (en) 2014-04-30 2015-04-29 Etch back processes of bonding material for the manufacture of through-glass vias

Publications (2)

Publication Number Publication Date
JP2017520906A true JP2017520906A (ja) 2017-07-27
JP2017520906A5 JP2017520906A5 (enExample) 2018-06-14

Family

ID=53177892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016565202A Pending JP2017520906A (ja) 2014-04-30 2015-04-29 貫通ガラスバイアの作製のための接合材料のエッチバックプロセス

Country Status (7)

Country Link
US (2) US9263300B2 (enExample)
EP (1) EP3138120B1 (enExample)
JP (1) JP2017520906A (enExample)
KR (1) KR20160145801A (enExample)
CN (1) CN106470953B (enExample)
TW (1) TWI659002B (enExample)
WO (1) WO2015168236A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9263300B2 (en) * 2014-04-30 2016-02-16 Corning Incorporated Etch back processes of bonding material for the manufacture of through-glass vias
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
TWI877876B (zh) * 2016-11-18 2025-03-21 美商山姆科技公司 用於填充之無鉛材料及導電組件
CN108231646A (zh) * 2016-12-13 2018-06-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
CN112154538A (zh) 2018-03-30 2020-12-29 申泰公司 导电过孔及其制造方法
US11148935B2 (en) 2019-02-22 2021-10-19 Menlo Microsystems, Inc. Full symmetric multi-throw switch using conformal pinched through via
WO2021167787A1 (en) * 2020-02-18 2021-08-26 Corning Incorporated Etching of glass surfaces to reduce electrostatic charging during processing
US11856711B2 (en) * 2020-10-28 2023-12-26 Infineon Technologies Austria Ag Rogowski coil integrated in glass substrate
CN117747504B (zh) * 2023-12-20 2024-07-19 西安赛富乐斯半导体科技有限公司 粘合胶层厚度调整方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006161124A (ja) * 2004-12-09 2006-06-22 Canon Inc 貫通電極の形成方法
JP2007042741A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 電子部品実装構造体及びその製造方法
JP2007067031A (ja) * 2005-08-30 2007-03-15 Tdk Corp 配線基板の製造方法
JP2012028533A (ja) * 2010-07-22 2012-02-09 Canon Inc 基板貫通孔内への金属充填方法及び基板
WO2013008344A1 (ja) * 2011-07-14 2013-01-17 株式会社島津製作所 プラズマ処理装置
WO2014038326A1 (ja) * 2012-09-07 2014-03-13 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7425507B2 (en) 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
US7429529B2 (en) * 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
CN102246292B (zh) * 2008-10-10 2014-06-18 台湾积体电路制造股份有限公司 在用于3d封装的基底中电镀基底贯通孔的方法
JP5201048B2 (ja) * 2009-03-25 2013-06-05 富士通株式会社 半導体装置とその製造方法
US20110229687A1 (en) 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US8411459B2 (en) 2010-06-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Interposer-on-glass package structures
EP2646384B1 (en) 2010-11-30 2019-03-27 Corning Incorporated Methods of forming high-density arrays of holes in glass
TWI547454B (zh) 2011-05-31 2016-09-01 康寧公司 於玻璃中高速製造微孔洞的方法
WO2014085660A1 (en) 2012-11-29 2014-06-05 Corning Incorporated Sacrificial cover layers for laser drilling substrates and methods thereof
US9425125B2 (en) * 2014-02-20 2016-08-23 Altera Corporation Silicon-glass hybrid interposer circuitry
US9263300B2 (en) * 2014-04-30 2016-02-16 Corning Incorporated Etch back processes of bonding material for the manufacture of through-glass vias

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006161124A (ja) * 2004-12-09 2006-06-22 Canon Inc 貫通電極の形成方法
JP2007042741A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 電子部品実装構造体及びその製造方法
JP2007067031A (ja) * 2005-08-30 2007-03-15 Tdk Corp 配線基板の製造方法
JP2012028533A (ja) * 2010-07-22 2012-02-09 Canon Inc 基板貫通孔内への金属充填方法及び基板
WO2013008344A1 (ja) * 2011-07-14 2013-01-17 株式会社島津製作所 プラズマ処理装置
WO2014038326A1 (ja) * 2012-09-07 2014-03-13 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品

Also Published As

Publication number Publication date
US20150318187A1 (en) 2015-11-05
EP3138120B1 (en) 2018-04-18
US20160155696A1 (en) 2016-06-02
WO2015168236A1 (en) 2015-11-05
US9263300B2 (en) 2016-02-16
KR20160145801A (ko) 2016-12-20
EP3138120A1 (en) 2017-03-08
TW201600484A (zh) 2016-01-01
TWI659002B (zh) 2019-05-11
CN106470953A (zh) 2017-03-01
CN106470953B (zh) 2019-03-12

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