TWI659002B - 用於製造貫穿玻璃之連通件的接合材料回蝕製程 - Google Patents

用於製造貫穿玻璃之連通件的接合材料回蝕製程 Download PDF

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Publication number
TWI659002B
TWI659002B TW104113956A TW104113956A TWI659002B TW I659002 B TWI659002 B TW I659002B TW 104113956 A TW104113956 A TW 104113956A TW 104113956 A TW104113956 A TW 104113956A TW I659002 B TWI659002 B TW I659002B
Authority
TW
Taiwan
Prior art keywords
substrate
bonding layer
holes
carrier
glass substrate
Prior art date
Application number
TW104113956A
Other languages
English (en)
Chinese (zh)
Other versions
TW201600484A (zh
Inventor
Chih-Wei Tsai
蔡其偉
Bor Kai Wang
王柏凱
Original Assignee
Corning Incorporated
美商康寧公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Incorporated, 美商康寧公司 filed Critical Corning Incorporated
Publication of TW201600484A publication Critical patent/TW201600484A/zh
Application granted granted Critical
Publication of TWI659002B publication Critical patent/TWI659002B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H10P72/74—
    • H10W70/095—
    • H10W70/635—
    • H10W70/65—
    • H10W70/66—
    • H10W70/69—
    • H10W70/692—
    • H10P72/7412—
    • H10P72/7424—
    • H10P72/743—
    • H10P72/744—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)
TW104113956A 2014-04-30 2015-04-30 用於製造貫穿玻璃之連通件的接合材料回蝕製程 TWI659002B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461986370P 2014-04-30 2014-04-30
US61/986,370 2014-04-30

Publications (2)

Publication Number Publication Date
TW201600484A TW201600484A (zh) 2016-01-01
TWI659002B true TWI659002B (zh) 2019-05-11

Family

ID=53177892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104113956A TWI659002B (zh) 2014-04-30 2015-04-30 用於製造貫穿玻璃之連通件的接合材料回蝕製程

Country Status (7)

Country Link
US (2) US9263300B2 (enExample)
EP (1) EP3138120B1 (enExample)
JP (1) JP2017520906A (enExample)
KR (1) KR20160145801A (enExample)
CN (1) CN106470953B (enExample)
TW (1) TWI659002B (enExample)
WO (1) WO2015168236A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9263300B2 (en) * 2014-04-30 2016-02-16 Corning Incorporated Etch back processes of bonding material for the manufacture of through-glass vias
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10134657B2 (en) 2016-06-29 2018-11-20 Corning Incorporated Inorganic wafer having through-holes attached to semiconductor wafer
TWI877876B (zh) * 2016-11-18 2025-03-21 美商山姆科技公司 用於填充之無鉛材料及導電組件
CN108231646A (zh) * 2016-12-13 2018-06-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
CN112154538A (zh) 2018-03-30 2020-12-29 申泰公司 导电过孔及其制造方法
US11148935B2 (en) 2019-02-22 2021-10-19 Menlo Microsystems, Inc. Full symmetric multi-throw switch using conformal pinched through via
WO2021167787A1 (en) * 2020-02-18 2021-08-26 Corning Incorporated Etching of glass surfaces to reduce electrostatic charging during processing
US11856711B2 (en) * 2020-10-28 2023-12-26 Infineon Technologies Austria Ag Rogowski coil integrated in glass substrate
CN117747504B (zh) * 2023-12-20 2024-07-19 西安赛富乐斯半导体科技有限公司 粘合胶层厚度调整方法

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TW201041118A (en) * 2009-03-25 2010-11-16 Fujitsu Ltd Semiconductor device
WO2014038326A1 (ja) * 2012-09-07 2014-03-13 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品

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JP2006161124A (ja) * 2004-12-09 2006-06-22 Canon Inc 貫通電極の形成方法
US7425507B2 (en) 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
JP4889974B2 (ja) * 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
US7429529B2 (en) * 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
JP2007067031A (ja) * 2005-08-30 2007-03-15 Tdk Corp 配線基板の製造方法
CN102246292B (zh) * 2008-10-10 2014-06-18 台湾积体电路制造股份有限公司 在用于3d封装的基底中电镀基底贯通孔的方法
US20110229687A1 (en) 2010-03-19 2011-09-22 Qualcomm Incorporated Through Glass Via Manufacturing Process
US8411459B2 (en) 2010-06-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Interposer-on-glass package structures
JP5729932B2 (ja) * 2010-07-22 2015-06-03 キヤノン株式会社 基板貫通孔内への金属充填方法
EP2646384B1 (en) 2010-11-30 2019-03-27 Corning Incorporated Methods of forming high-density arrays of holes in glass
TWI547454B (zh) 2011-05-31 2016-09-01 康寧公司 於玻璃中高速製造微孔洞的方法
JP5804059B2 (ja) * 2011-07-14 2015-11-04 株式会社島津製作所 プラズマ処理装置
WO2014085660A1 (en) 2012-11-29 2014-06-05 Corning Incorporated Sacrificial cover layers for laser drilling substrates and methods thereof
US9425125B2 (en) * 2014-02-20 2016-08-23 Altera Corporation Silicon-glass hybrid interposer circuitry
US9263300B2 (en) * 2014-04-30 2016-02-16 Corning Incorporated Etch back processes of bonding material for the manufacture of through-glass vias

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201041118A (en) * 2009-03-25 2010-11-16 Fujitsu Ltd Semiconductor device
WO2014038326A1 (ja) * 2012-09-07 2014-03-13 旭硝子株式会社 インターポーザ用の中間品を製造する方法およびインターポーザ用の中間品

Also Published As

Publication number Publication date
US20150318187A1 (en) 2015-11-05
EP3138120B1 (en) 2018-04-18
US20160155696A1 (en) 2016-06-02
WO2015168236A1 (en) 2015-11-05
US9263300B2 (en) 2016-02-16
KR20160145801A (ko) 2016-12-20
EP3138120A1 (en) 2017-03-08
JP2017520906A (ja) 2017-07-27
TW201600484A (zh) 2016-01-01
CN106470953A (zh) 2017-03-01
CN106470953B (zh) 2019-03-12

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