JP2012028533A - 基板貫通孔内への金属充填方法及び基板 - Google Patents
基板貫通孔内への金属充填方法及び基板 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
- H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
【解決手段】 少なくとも表面に導電性を有する第1の基板と、貫通孔を有する第2の基板とが非イオン性界面活性剤を介して結合された結合基板を用意する工程と、前記結合基板の結合面であって、前記第2の基板の前記貫通孔の底部に位置する前記非イオン性界面活性剤を除去し、前記貫通孔の底部に位置する前記第1の基板の前記導電性を有する表面を露出させる工程と、前記第1の基板の前記導電性を有する表面に電界を印加して前記貫通孔内に金属を充填させる工程と、を含む。
【選択図】 図1
Description
前記結合基板の結合面であって、前記第2の基板の前記貫通孔の底部に位置する前記非イオン性界面活性剤を除去し、前記貫通孔の底部に位置する前記第1の基板の前記導電性を有する表面を露出させる工程と、
前記第1の基板の前記導電性を有する表面に電界を印加して前記貫通孔内に金属を充填させる工程と、を含むことを特徴とするものである。
本実施例は図2を用いて説明する。本実施例では、結合基板3を次のように用意する。100mmΦで厚さ0.1mmのステンレスフィルムを導電層を有する基板を第1の基板1として用意した。非イオン性界面活性剤としてポリオキシエチレンラウリルエーテル(融点34℃)を用い、重量比3対1のシクロペンタノンとアセトンの混合溶媒に溶解させ10重量%のポリオキシエチレンラウリルエーテル溶液を調製した。この溶液をステンレスフィルム上にスピンコートし、室温に15分間放置したところポリオキシエチレンラウリルエーテルの固体がステンレスフィルム上に析出し非イオン性界面活性剤4の層が形成された(図2(a))。
硫酸銅・5水和物 200(g/L)
98%濃硫酸 14(mL/L)
35%塩酸 0.09(mL/L)
Cu−Brite VFII−A(荏原ユージライト社製) 20(mL/L)
Cu−Brite VFII−B(荏原ユージライト社製) 1(mL/L)
接着層が界面活性剤であることにより、導電層に対してめっき液が濡れやすくめっき層の均一な発生を促す効果がある。また、めっき後に容易に導電性を有する基板を剥離することができる。
本比較例では、非イオン性界面活性剤の代わりにポジ型レジストを接着層として用いる。
本実施例では、結合基板3を次のように用意する。100mmΦで厚さ0.2mmのポリエチレンテレフタレートフィルム上に電子ビーム蒸着にてチタンと銅の順番でそれぞれ50Å、1000Å成膜し、導電層を形成した基板を表面に導電性を有する基板を第1の基板1として用いた。
第2の基板2は第1実施例と同様な基板を用いた。
硫酸銅・5水和物 200(g/L)
98%濃硫酸 14(mL/L)
35%塩酸 0.09(mL/L)
Cu−Brite VFII−A(荏原ユージライト社製) 20(mL/L)
Cu−Brite VFII−B(荏原ユージライト社製) 1(mL/L)
めっき終了後、基板を水洗し、窒素ブローで乾燥させた。この基板を80℃の温水の入ったビーカーに浸し揺動させた。接着層のポリオキシエチレンラウリルエーテルは融点以上の温水であることで液体となり、さらに可溶性溶媒である温水中に溶け出しポリエチレンテレフタレートフィルムが剥離された。第1実施例と同様に、貫通孔5内に銅のめっき層7が充填されていることが確認された。
本実施例では、結合基板3を次のように用意する。100mmΦで厚さ0.1mmのステンレスフィルムを導電性を有する第1の基板1とする。非イオン性界面活性剤としてポリエチレングリコール20000(融点63℃)を重量比3対1のシクロペンタノンとアセトンの混合溶媒に溶解させ10重量%のポリエチレングリコール20000溶液を調製する。この溶液をステンレスフィルム上にスピンコートし、室温に15分間放置したところポリエチレングリコール20000の固体がステンレスフィルム上に析出し非イオン性界面活性剤層4の層が形成される。
スルファミン酸ニッケル・6水和物 450(g/L)
塩化ニッケル・6水和物 14(g/L)
ホウ酸 30(g/L)
サッカリンナトリウム 1.5(g/L)
ブチンジオール 0.15(g/L)
めっき終了後、基板を水洗し、窒素ブローで乾燥させる。この基板のめっきと突出面を下に向け100℃に加熱されたホットプレートに載置し、加熱してポリエチレングリコール20000を溶融させる。ステンレスフィルムをピンセットで摘み、ステンレスフィルムのみを基板面に対し平行な方向にずらしていき剥離する。光学顕微鏡で貫通孔が設けられた基板2の両面を観察したところめっき層7が充填されている。また、断面を観察してもめっき層7内に空隙は観察されず、貫通孔5内にニッケルのめっき層7が充填されていることが確認される。
本実施例では電子線制御デバイスに用いることができるブランキングアレイ10は次のように作製される。第1の実施例にてめっき層7が研磨によって平坦化された基板を用いる。長方形が25μmの間隔で並んだ組パターンの間のみが露出するようにフォトレジストを用いてパターニングを行う。露出した部分をICP−RIEによる深堀エッチングにて基板の厚さ方向にエッチングを行い貫通孔を形成する。平坦化された各めっき層7に通電できるように配線が形成された基板とをバンプ接合にて接合する。
2 第2の基板
3 結合基板
4 非イオン性界面活性剤
5 貫通孔
6 貫通孔下の非非イオン性界面活性剤
7 めっき層
Claims (6)
- 少なくとも表面に導電性を有する第1の基板と、貫通孔を有する第2の基板とが非イオン性界面活性剤を介して結合された結合基板を用意する工程と、
前記結合基板の結合面であって、前記第2の基板の前記貫通孔の底部に位置する前記非イオン性界面活性剤を除去し、前記貫通孔の底部に位置する前記第1の基板の前記導電性を有する表面を露出させる工程と、
前記第1の基板の前記導電性を有する表面に電界を印加して前記貫通孔内に金属を充填させる工程と、を含むことを特徴とする基板の貫通孔内への金属充填方法。 - 前記貫通孔内に金属を充填させた後、前記非イオン性界面活性剤の融点以上に加熱し、前記第1の基板と前記第2の基板とを分離離する工程を含むことを特徴とする請求項1に記載の基板の貫通孔内への金属充填方法。
- 前記第1の基板と前記第2の基板とを分離する工程の後、前記第2の基板の前記貫通孔から突出した金属を研磨し平坦にする工程を含むことを特徴とする請求項1又は2に記載の基板の貫通孔内への金属充填方法。
- 前記結合基板は、
前記第1の基板又は前記第2の基板の少なくとも一方の面に非イオン性界面活性剤層が形成された基板を用意する工程と、
前記非イオン性界面活性剤層を介して前記第1の基板と前記第2の基板とが結合されるように配置し、前記非イオン性界面活性剤の融点以上に加熱する工程と、
前記非イオン性界面活性剤層の溶融後、前記非イオン性界面活性剤の融点以下に冷却して前記界面活性剤を固化させる工程を含み形成されることを特徴とする請求項1から3のいずれか1項に記載の基板の貫通孔内への金属充填方法。 - 前記結合基板の貫通孔底部の前記非イオン性界面活性剤を除去する工程は、前記非イオン性界面活性剤を可溶性溶媒に溶解させることによって行うことを特徴とする請求項1から4に記載の基板の貫通孔内への金属充填方法。
- 少なくとも表面に導電性を有する第1の基板と、
貫通孔を有する第2の基板とが非イオン性界面活性剤層を介して結合していることを特徴とする結合基板。
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---|---|---|---|---|
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JP2017095791A (ja) * | 2015-11-28 | 2017-06-01 | キヤノン株式会社 | 貫通配線基板の製造方法及びこれを用いたデバイスの製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8970045B2 (en) | 2011-03-31 | 2015-03-03 | Soitec | Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003078171A (ja) * | 2001-09-03 | 2003-03-14 | Sony Corp | 配線及びその形成方法、接続孔及びその形成方法、配線形成体及びその形成方法、表示素子及びその形成方法、画像表示装置及びその製造方法 |
JP2004119606A (ja) * | 2002-09-25 | 2004-04-15 | Canon Inc | 半導体基板の貫通孔埋め込み方法および半導体基板 |
JP2004259795A (ja) * | 2003-02-25 | 2004-09-16 | Cmk Corp | 多層プリント配線板の製造方法 |
JP2006161124A (ja) * | 2004-12-09 | 2006-06-22 | Canon Inc | 貫通電極の形成方法 |
JP2007042741A (ja) * | 2005-08-01 | 2007-02-15 | Shinko Electric Ind Co Ltd | 電子部品実装構造体及びその製造方法 |
JP2007067031A (ja) * | 2005-08-30 | 2007-03-15 | Tdk Corp | 配線基板の製造方法 |
JP2007067016A (ja) * | 2005-08-29 | 2007-03-15 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2007070398A (ja) * | 2005-09-05 | 2007-03-22 | Nitto Denko Corp | 粘着剤組成物、粘着シート類、および表面保護フィルム |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4526747B2 (ja) * | 2001-08-17 | 2010-08-18 | 株式会社アドバンテスト | 配線基板の製造方法 |
JP4019960B2 (ja) * | 2003-01-31 | 2007-12-12 | 三菱電機株式会社 | 基板の製造方法 |
JP2005179496A (ja) * | 2003-12-19 | 2005-07-07 | Nitto Denko Corp | 加熱剥離型粘着シート |
JP2006054307A (ja) | 2004-08-11 | 2006-02-23 | Shinko Electric Ind Co Ltd | 基板の製造方法 |
JP2010165307A (ja) | 2009-01-19 | 2010-07-29 | Hitachi Ltd | ポイント管理装置 |
-
2010
- 2010-07-22 JP JP2010165307A patent/JP5729932B2/ja not_active Expired - Fee Related
-
2011
- 2011-07-04 US US13/811,238 patent/US20130118793A1/en not_active Abandoned
- 2011-07-04 WO PCT/JP2011/003811 patent/WO2012011230A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003078171A (ja) * | 2001-09-03 | 2003-03-14 | Sony Corp | 配線及びその形成方法、接続孔及びその形成方法、配線形成体及びその形成方法、表示素子及びその形成方法、画像表示装置及びその製造方法 |
JP2004119606A (ja) * | 2002-09-25 | 2004-04-15 | Canon Inc | 半導体基板の貫通孔埋め込み方法および半導体基板 |
JP2004259795A (ja) * | 2003-02-25 | 2004-09-16 | Cmk Corp | 多層プリント配線板の製造方法 |
JP2006161124A (ja) * | 2004-12-09 | 2006-06-22 | Canon Inc | 貫通電極の形成方法 |
JP2007042741A (ja) * | 2005-08-01 | 2007-02-15 | Shinko Electric Ind Co Ltd | 電子部品実装構造体及びその製造方法 |
JP2007067016A (ja) * | 2005-08-29 | 2007-03-15 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2007067031A (ja) * | 2005-08-30 | 2007-03-15 | Tdk Corp | 配線基板の製造方法 |
JP2007070398A (ja) * | 2005-09-05 | 2007-03-22 | Nitto Denko Corp | 粘着剤組成物、粘着シート類、および表面保護フィルム |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9530692B2 (en) | 2014-02-18 | 2016-12-27 | Canon Kabushiki Kaisha | Method of forming through wiring |
JP2017520906A (ja) * | 2014-04-30 | 2017-07-27 | コーニング インコーポレイテッド | 貫通ガラスバイアの作製のための接合材料のエッチバックプロセス |
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US10667392B2 (en) | 2015-12-01 | 2020-05-26 | Canon Kabushiki Kaisha | Method for manufacturing through wiring substrate and method for manufacturing device |
US11114309B2 (en) | 2016-06-01 | 2021-09-07 | Corning Incorporated | Articles and methods of forming vias in substrates |
US10756003B2 (en) | 2016-06-29 | 2020-08-25 | Corning Incorporated | Inorganic wafer having through-holes attached to semiconductor wafer |
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US11062986B2 (en) | 2017-05-25 | 2021-07-13 | Corning Incorporated | Articles having vias with geometry attributes and methods for fabricating the same |
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US11972993B2 (en) | 2017-05-25 | 2024-04-30 | Corning Incorporated | Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same |
US11554984B2 (en) | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
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