JP2017502522A5 - - Google Patents
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- Publication number
- JP2017502522A5 JP2017502522A5 JP2016544067A JP2016544067A JP2017502522A5 JP 2017502522 A5 JP2017502522 A5 JP 2017502522A5 JP 2016544067 A JP2016544067 A JP 2016544067A JP 2016544067 A JP2016544067 A JP 2016544067A JP 2017502522 A5 JP2017502522 A5 JP 2017502522A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etch stop
- stop layer
- register
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims 14
- 239000002184 metal Substances 0.000 claims 13
- 238000000034 method Methods 0.000 claims 11
- 238000005530 etching Methods 0.000 claims 9
- 238000000151 deposition Methods 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 4
- 229910019974 CrSi Inorganic materials 0.000 claims 4
- 229910004541 SiN Inorganic materials 0.000 claims 4
- 229910003465 moissanite Inorganic materials 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 2
- 229910001120 nichrome Inorganic materials 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361922155P | 2013-12-31 | 2013-12-31 | |
| US61/922,155 | 2013-12-31 | ||
| US14/548,812 US9502284B2 (en) | 2013-12-31 | 2014-11-20 | Metal thin film resistor and process |
| US14/548,812 | 2014-11-20 | ||
| PCT/US2014/073001 WO2015103394A2 (en) | 2013-12-31 | 2014-12-31 | A metal thin film resistor and process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017502522A JP2017502522A (ja) | 2017-01-19 |
| JP2017502522A5 true JP2017502522A5 (enExample) | 2018-02-15 |
Family
ID=53482657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016544067A Pending JP2017502522A (ja) | 2013-12-31 | 2014-12-31 | 金属薄膜レジスタおよびプロセス |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9502284B2 (enExample) |
| EP (1) | EP3090446A4 (enExample) |
| JP (1) | JP2017502522A (enExample) |
| CN (1) | CN105874599A (enExample) |
| WO (1) | WO2015103394A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107516646A (zh) * | 2016-06-15 | 2017-12-26 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
| US10037990B2 (en) * | 2016-07-01 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer |
| KR102402670B1 (ko) | 2017-06-26 | 2022-05-26 | 삼성전자주식회사 | 저항 구조체를 포함하는 반도체 소자 |
| US10211278B2 (en) * | 2017-07-11 | 2019-02-19 | Texas Instruments Incorporated | Device and method for a thin film resistor using a via retardation layer |
| US10354951B1 (en) | 2018-01-16 | 2019-07-16 | Texas Instruments Incorporated | Thin film resistor with punch-through vias |
| US10770393B2 (en) | 2018-03-20 | 2020-09-08 | International Business Machines Corporation | BEOL thin film resistor |
| KR102460719B1 (ko) | 2018-07-20 | 2022-10-31 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| US11088024B2 (en) * | 2019-04-11 | 2021-08-10 | Microchip Technology Incorporated | Forming a thin film resistor (TFR) in an integrated circuit device |
| KR102732300B1 (ko) * | 2019-07-17 | 2024-11-19 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| CN110993582B (zh) * | 2019-10-31 | 2022-04-08 | 重庆中科渝芯电子有限公司 | 金属薄膜电阻、应用金属薄膜电阻的集成电路和制造方法 |
| US11315876B2 (en) | 2020-02-17 | 2022-04-26 | Globalfoundries Singapore Pte. Ltd. | Thin film conductive material with conductive etch stop layer |
| US11990257B2 (en) | 2020-02-27 | 2024-05-21 | Microchip Technology Incorporated | Thin film resistor (TFR) formed in an integrated circuit device using wet etching of a dielectric cap |
| US11508500B2 (en) | 2020-02-28 | 2022-11-22 | Microchip Technology Incorporated | Thin film resistor (TFR) formed in an integrated circuit device using TFR cap layer(s) as an etch stop and/or hardmask |
| US11495657B2 (en) | 2020-03-02 | 2022-11-08 | Microchip Technology Incorporated | Thin film resistor (TFR) formed in an integrated circuit device using an oxide cap layer as a TFR etch hardmask |
| KR102737514B1 (ko) | 2020-06-11 | 2024-12-05 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102766491B1 (ko) | 2020-08-27 | 2025-02-14 | 삼성전자주식회사 | 반도체 소자 |
| US12414312B2 (en) * | 2021-12-20 | 2025-09-09 | International Business Machines Corporation | Back-end-of-line thin film resistor |
| WO2024014473A1 (ja) * | 2022-07-15 | 2024-01-18 | ローム株式会社 | 半導体装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6734076B1 (en) | 2003-03-17 | 2004-05-11 | Texas Instruments Incorporated | Method for thin film resistor integration in dual damascene structure |
| US7323751B2 (en) | 2003-06-03 | 2008-01-29 | Texas Instruments Incorporated | Thin film resistor integration in a dual damascene structure |
| DE10341059B4 (de) * | 2003-09-05 | 2007-05-31 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren |
| SE0302810D0 (sv) | 2003-10-24 | 2003-10-24 | Infineon Technologies Ag | Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof |
| US7271700B2 (en) * | 2005-02-16 | 2007-09-18 | International Business Machines Corporation | Thin film resistor with current density enhancing layer (CDEL) |
| US7303972B2 (en) | 2006-01-19 | 2007-12-04 | International Business Machines Incorporated | Integrated thin-film resistor with direct contact |
| JP5564749B2 (ja) * | 2006-11-20 | 2014-08-06 | 富士電機株式会社 | 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置 |
| US8013394B2 (en) | 2007-03-28 | 2011-09-06 | International Business Machines Corporation | Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method |
| JP5446120B2 (ja) * | 2008-04-23 | 2014-03-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
| JP5291991B2 (ja) * | 2008-06-10 | 2013-09-18 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| US8298902B2 (en) | 2009-03-18 | 2012-10-30 | International Business Machines Corporation | Interconnect structures, methods for fabricating interconnect structures, and design structures for a radiofrequency integrated circuit |
| RU2474921C1 (ru) | 2011-08-30 | 2013-02-10 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") | Интегральная схема свч |
| US8680618B2 (en) * | 2011-10-17 | 2014-03-25 | Texas Instruments Incorporated | Structure and method for integrating front end SiCr resistors in HiK metal gate technologies |
| JP2013143521A (ja) * | 2012-01-12 | 2013-07-22 | Renesas Electronics Corp | 半導体装置とその製造方法 |
| JP2013187325A (ja) * | 2012-03-07 | 2013-09-19 | Seiko Instruments Inc | 半導体装置 |
| JP5850407B2 (ja) * | 2012-04-12 | 2016-02-03 | 株式会社デンソー | 半導体装置及び半導体装置の製造方法 |
| US8980723B2 (en) * | 2012-06-15 | 2015-03-17 | Texas Instruments Incorporated | Multiple depth vias in an integrated circuit |
| US8803287B2 (en) * | 2012-10-17 | 2014-08-12 | Texas Instruments Deutschland Gmbh | Electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and thin film resistor and method of manufacturing the same |
-
2014
- 2014-11-20 US US14/548,812 patent/US9502284B2/en active Active
- 2014-12-31 EP EP14876139.8A patent/EP3090446A4/en not_active Withdrawn
- 2014-12-31 WO PCT/US2014/073001 patent/WO2015103394A2/en not_active Ceased
- 2014-12-31 CN CN201480071999.7A patent/CN105874599A/zh active Pending
- 2014-12-31 JP JP2016544067A patent/JP2017502522A/ja active Pending
-
2016
- 2016-11-21 US US15/357,796 patent/US10177214B2/en active Active
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