JP2017227897A - 表示装置、表示モジュール、電子機器、及び表示装置の作製方法 - Google Patents
表示装置、表示モジュール、電子機器、及び表示装置の作製方法 Download PDFInfo
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- JP2017227897A JP2017227897A JP2017117554A JP2017117554A JP2017227897A JP 2017227897 A JP2017227897 A JP 2017227897A JP 2017117554 A JP2017117554 A JP 2017117554A JP 2017117554 A JP2017117554 A JP 2017117554A JP 2017227897 A JP2017227897 A JP 2017227897A
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H10K59/1201—Manufacture or treatment
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
【解決手段】第1の表示素子、第2の表示素子、第1のトランジスタ、及び第2のトランジスタを有する表示装置である。第1の表示素子は、可視光を反射する機能を有する。第2の表示素子は、可視光を射出する機能を有する。第1のトランジスタは、第1の表示素子の駆動を制御する機能を有する。第2のトランジスタは、第2の表示素子の駆動を制御する機能を有する。第1のトランジスタは、第1の表示素子よりも表示装置の表示面側に位置する。第1の表示素子は、第2の表示素子及び第2のトランジスタよりも表示装置の表示面側に位置する。
【選択図】図1
Description
本実施の形態では、本発明の一態様の表示装置について図1〜図14を用いて説明する。
図6は、表示装置100の斜視概略図である。表示装置100は、基板351と基板361とが貼り合わされた構成を有する。図6では、基板361を破線で明示している。
図8(A)に表示装置100Aの表示部の断面図を示す。
図8(B)に表示装置100Bの表示部の断面図を示す。
図9(A)に示す表示装置100Cは、EL層122が塗り分けられており、かつ着色層232を有さない点で、表示装置100と異なる。その他の構成については、表示装置100と同様のため、詳細な説明を省略する。
図9(B)に示す表示装置100Dは、基板351及び基板361を有さず、可撓性を有する基板381、可撓性を有する基板382、接着層383、及び絶縁層384を有する点で、表示装置100Cと異なる。その他の構成については、表示装置100Cと同様のため、詳細な説明を省略する。
以下では、図7に示す表示装置100の作製方法の一例について説明する。
本実施の形態では、実施の形態1で説明した表示装置の、より具体的な構成例について図15〜図17を用いて説明する。
本実施の形態では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud−Aligned Composite)−OSの構成について説明する。
本実施の形態では、本発明の一態様の表示モジュール及び電子機器について説明する。
C1 容量素子
C2 容量素子
CSCOM 配線
G1 配線
G2 配線
G3 配線
GD 回路
S1 配線
S2 配線
S3 配線
SD 回路
SW1 スイッチ
SW2 スイッチ
VCOM1 配線
VCOM2 配線
10 表示装置
11 基板
12 基板
14 表示部
21 発光
22 反射光
30 画素ユニット
31 液晶素子
31B 第1の表示素子
31G 第1の表示素子
31p 画素
31R 第1の表示素子
31W 第1の表示素子
32 発光素子
32B 第2の表示素子
32G 第2の表示素子
32p 画素
32R 第2の表示素子
32W 第2の表示素子
32Y 第2の表示素子
35r 光
35t 光
35tr 光
41 トランジスタ
42 トランジスタ
51 接着層
61 作製基板
62 剥離層
100 表示装置
100A 表示装置
100B 表示装置
100C 表示装置
100D 表示装置
110a トランジスタ
110b トランジスタ
110c トランジスタ
110d トランジスタ
110e トランジスタ
110f トランジスタ
110g トランジスタ
111 導電層
112 半導体層
112a 半導体層
113a 導電層
113b 導電層
113c 導電層
113d 導電層
114 導電層
114a 導電層
114b 導電層
115 導電層
117 絶縁層
121 電極
121a 電極
121b 導電層
122 EL層
123 電極
125 絶縁層
131 絶縁層
132 絶縁層
133 絶縁層
133a 配向膜
133b 配向膜
134 絶縁層
135 偏光板
136 絶縁層
137 絶縁層
138 絶縁層
139 絶縁層
141 接着層
201a トランジスタ
201b トランジスタ
204a 接続部
204b 接続部
211 絶縁層
212 絶縁層
213 絶縁層
214 絶縁層
215 絶縁層
216 絶縁層
220 絶縁層
221 電極
221a 電極
221b 電極
222 液晶層
223 電極
223a 電極
223b 導電層
223c 導電層
224a 導電層
224b 導電層
231 着色層
232 着色層
234 絶縁層
235 導電層
236 導電性粒子
239 絶縁層
242 接続層
252 接続部
274 接続層
291 絶縁層
292 絶縁層
293 絶縁層
294 絶縁層
295 絶縁層
296a 導電層
296b 導電層
311 電極
340 液晶素子
351 基板
360 発光素子
360b 発光素子
360g 発光素子
360r 発光素子
360w 発光素子
361 基板
362 表示部
364 回路
365 配線
367 配線
372 FPC
373 IC
374 FPC
375 IC
381 基板
382 基板
383 接着層
384 絶縁層
400 表示装置
410 画素
451 開口
800 携帯情報端末
801 筐体
802 筐体
803 表示部
804 表示部
805 ヒンジ部
810 携帯情報端末
811 筐体
812 表示部
813 操作ボタン
814 外部接続ポート
815 スピーカ
816 マイク
817 カメラ
820 カメラ
821 筐体
822 表示部
823 操作ボタン
824 シャッターボタン
826 レンズ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8009 フレーム
8010 プリント基板
8011 バッテリ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9055 ヒンジ
9200 携帯情報端末
9201 携帯情報端末
9202 携帯情報端末
Claims (16)
- 第1の表示素子、第2の表示素子、第1のトランジスタ、及び第2のトランジスタを有する表示装置であり、
前記第1の表示素子は、可視光を反射する機能を有し、
前記第2の表示素子は、可視光を射出する機能を有し、
前記第1のトランジスタは、前記第1の表示素子の駆動を制御する機能を有し、
前記第2のトランジスタは、前記第2の表示素子の駆動を制御する機能を有し、
前記第1のトランジスタは、前記第1の表示素子よりも前記表示装置の表示面側に位置し、
前記第1の表示素子は、前記第2の表示素子及び前記第2のトランジスタよりも前記表示面側に位置する、表示装置。 - 請求項1において、
前記第1の表示素子は、可視光を反射する機能を有する反射層を有し、
前記反射層は、開口部を有し、
前記第2の表示素子は、前記開口部と重なる部分を有し、
前記第2の表示素子は、前記開口部に向けて可視光を射出する機能を有する、表示装置。 - 請求項1または2に記載の表示装置は、前記第1の表示素子が反射する光、及び前記第2の表示素子が発する光のうち一方または双方により、画像を表示する機能を有する、表示装置。
- 請求項1乃至3のいずれか一において、
前記第1の表示素子は、反射型の液晶素子である、表示装置。 - 請求項1乃至4のいずれか一において、
前記第2の表示素子は、電界発光素子である、表示装置。 - 請求項1乃至5のいずれか一において、
前記第1のトランジスタ及び前記第2のトランジスタのうち一方または双方は、チャネル形成領域に酸化物半導体を有する、表示装置。 - 請求項1乃至6のいずれか一において、
前記第1の表示素子は、第1の電極、液晶層、及び第2の電極を有し、
前記液晶層は、前記第1の電極と前記第2の電極との間に位置し、
前記第1の電極は、前記第2の電極よりも前記表示面側に位置し、
前記第1の電極は、前記第1の電極よりも前記表示面側に位置する前記第1のトランジスタのソースまたはドレインと電気的に接続され、
前記第2の電極は、前記液晶層よりも前記表示面側に位置する導電層と電気的に接続される、表示装置。 - 請求項7において、
前記第2の電極と接する絶縁層を有し、
前記第2の電極は、前記絶縁層よりも前記表示面側に位置し、
前記第2の電極は、前記絶縁層よりも前記表示面と対向する面側に位置する各導電層とは電気的に絶縁される、表示装置。 - 請求項1乃至8のいずれか一において、
光学部材を有し、
前記光学部材から前記第1のトランジスタまでの最短距離よりも、前記光学部材から前記第2のトランジスタまでの最短距離の方が長く、
前記光学部材から前記第1の表示素子までの最短距離よりも、前記光学部材から前記第2の表示素子までの最短距離の方が長い、表示装置。 - 請求項9において、
前記光学部材は、偏光板、光拡散層、及び反射防止層のうち少なくとも一つを有する、表示装置。 - 請求項1乃至10のいずれか一に記載の表示装置と、
回路基板と、を有する表示モジュール。 - 請求項11に記載の表示モジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、または操作ボタンの少なくともいずれか一と、を有する、電子機器。 - 第1の表示素子と、第2の表示素子と、前記第1の表示素子の駆動を制御する機能を有する第1のトランジスタと、前記第2の表示素子の駆動を制御する機能を有する第2のトランジスタと、を有する表示装置の作製方法であり、
第1の基板上に、前記第1のトランジスタと、前記第1のトランジスタのソースまたはドレインと電気的に接続される第1の電極と、を形成し、
作製基板上に、剥離層を形成し、
前記剥離層上に、第2の電極を形成し、
前記第2の電極上に、第2の絶縁層を形成し、
前記第2の絶縁層上に、前記第2のトランジスタと、前記第2の表示素子と、を形成し、
前記作製基板と第2の基板とを接着剤を用いて貼り合わせ、
前記作製基板と前記第2の電極とを分離し、
前記第1の電極と露出した前記第2の電極との間に液晶層を配置し、接着剤を用いて、前記第1の基板と前記第2の基板とを貼り合わせることで、前記第1の表示素子を形成する、表示装置の作製方法。 - 請求項13において、
可視光を反射する機能を有する前記第2の電極を形成し、
前記第2の電極に開口を設け、
前記開口と重なる位置に、前記第2の表示素子を形成する、表示装置の作製方法。 - 請求項13または14において、
前記第1のトランジスタ及び前記第2のトランジスタのうち一方または双方の半導体層として、酸化物半導体層を形成する、表示装置の作製方法。 - 請求項13乃至15のいずれか一において、
前記第1の基板と前記第2の基板とを貼り合わせる際に用いる前記接着剤は導電性粒子を有し、
前記第1の電極を形成する工程では、同一の導電膜を加工して、前記第1の電極と導電層を形成し、
前記第1の基板と前記第2の基板とを貼り合わせる工程では、前記第2の電極と前記導電層とを、前記導電性粒子により電気的に接続させる、表示装置の作製方法。
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