JP2017216403A - エキスパンドシート、エキスパンドシートの製造方法、及びエキスパンドシートの拡張方法 - Google Patents
エキスパンドシート、エキスパンドシートの製造方法、及びエキスパンドシートの拡張方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000853 adhesive Substances 0.000 claims abstract description 67
- 230000001070 adhesive effect Effects 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000003292 glue Substances 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 45
- 239000012790 adhesive layer Substances 0.000 claims description 39
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000003672 processing method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
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- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H—ELECTRICITY
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
【解決手段】板状の被加工物(11)が貼着され、第1方向(D1)で被加工物を挟んで対面し且つ互いに離れる向きに移動可能な第1挟持手段(4)及び第2挟持手段(6)と第1方向に垂直な第2方向(D2)で被加工物を挟んで対面し且つ互いに離れる向きに移動可能な第3挟持手段(8)及び第4挟持手段(10)とで被加工物の周りの被挟持領域(A)が挟持されて拡張されるエキスパンドシート(1)であって、基材(3)と、基材上に形成され、紫外線を照射されることで粘着力が低下する糊層(5)と、を備え、被挟持領域の糊層の粘着力は、他の領域(B)の糊層の粘着力よりも低い。
【選択図】図1
Description
3 基材
3a 第1面(上面)
3b 第2面(下面)
5 糊層(接着層)
7 マスク
9 光源
11 被加工物
11a 第1面(表面)
11b 第2面(裏面)
13 デバイス
15 チップ
21 フレーム
23 エキスパンドシート
31 エキスパンドシート
33 セパレータフィルム
35 シートロール
2 拡張装置
4 第1挟持ユニット(第1挟持手段)
6 第2挟持ユニット(第2挟持手段)
8 第3挟持ユニット(第3挟持手段)
10 第4挟持ユニット(第4挟持手段)
12 上側支持部材
14 下側支持部材
16 接触部材
A 低粘着領域(被挟持領域)
A1 第1低粘着領域(被挟持領域)
A2 第2低粘着領域(被挟持領域)
B 高粘着領域(他の領域)
D1 第1方向
D2 第2方向
Claims (4)
- 板状の被加工物が貼着され、第1方向で該被加工物を挟んで対面し且つ互いに離れる向きに移動可能な第1挟持手段及び第2挟持手段と該第1方向に垂直な第2方向で該被加工物を挟んで対面し且つ互いに離れる向きに移動可能な第3挟持手段及び第4挟持手段とで該被加工物の周りの被挟持領域が挟持されて拡張されるエキスパンドシートであって、
基材と、該基材上に形成され、紫外線を照射されることで粘着力が低下する糊層と、を備え、
該被挟持領域の該糊層の粘着力は、他の領域の該糊層の粘着力よりも低いことを特徴とするエキスパンドシート。 - ロール状に巻回されてシートロールを構成する請求項1に記載のエキスパンドシートであって、
該シートロールの巻回される方向を該第1方向、該第1方向に垂直な方向を該第2方向として、該シートロールの該第1方向に所定の間隔で配置され該第2方向の一端から他端に至る複数の第1低粘着領域と、該シートロールの該第2方向の該一端側と該他端側とにおいてそれぞれ該第1方向に伸長する第2低粘着領域と、を該被挟持領域として有することを特徴とするエキスパンドシート。 - 板状の被加工物が貼着され、第1方向で該被加工物を挟んで対面し且つ互いに離れる向きに移動可能な第1挟持手段及び第2挟持手段と該第1方向に垂直な第2方向で該被加工物を挟んで対面し且つ互いに離れる向きに移動可能な第3挟持手段及び第4挟持手段とで該被加工物の周りの被挟持領域が挟持されて拡張されるエキスパンドシートの製造方法であって、
基材と、該基材上に形成され、紫外線を照射されることで粘着力が低下する糊層と、を備えるエキスパンドシートを準備する準備ステップと、
該被挟持領域の該糊層に対して選択的に紫外線を照射することで、該被挟持領域の該糊層の粘着力を、他の領域の該糊層の粘着力よりも低下させる紫外線照射ステップと、を備えることを特徴とするエキスパンドシートの製造方法。 - 基材と、該基材上に形成され、紫外線を照射されることで粘着力が低下する糊層と、を備えるエキスパンドシートを板状の被加工物に貼着する第1貼着ステップと、
該第1貼着ステップを実施する前又は実施した後に、第1方向で該被加工物を挟んで対面する第1挟持手段と第2挟持手段とで該エキスパンドシートを挟持するとともに、該第1方向に垂直な第2方向で該被加工物を挟んで対面する第3挟持手段と第4挟持手段とで該エキスパンドシートを挟持する挟持ステップと、
該貼着ステップと該挟持ステップとを実施した後、該第1挟持手段と該第2挟持手段とを該第1方向で互いに離れる向きに移動させるとともに、該第3挟持手段と該第4挟持手段とを該第2方向で互いに離れる向きに移動させる拡張ステップと、
該拡張ステップを実施した後、該被加工物を収容できる開口を備えた環状のフレームを該エキスパンドシートの該被加工物を囲む領域に貼着する第2貼着ステップと、
該第2貼着ステップを実施した後、該エキスパンドシートを該フレームに沿って切断する切断ステップと、
該挟持ステップを実施する前に、該第1挟持手段と該第2挟持手段と該第3挟持手段と該第4挟持手段とで挟持される被挟持領域の該糊層に対して選択的に紫外線を照射することで、該被挟持領域の該糊層の粘着力を他の領域の該糊層の粘着力よりも低下させる紫外線照射ステップと、を備えることを特徴とするエキスパンドシートの拡張方法。
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JP2016110320A JP6710457B2 (ja) | 2016-06-01 | 2016-06-01 | エキスパンドシート、エキスパンドシートの製造方法、及びエキスパンドシートの拡張方法 |
TW106114483A TWI728103B (zh) | 2016-06-01 | 2017-05-02 | 擴展片、擴展片的製造方法、及擴展片的擴張方法 |
SG10201704118WA SG10201704118WA (en) | 2016-06-01 | 2017-05-19 | Expansion sheet, expansion sheet manufacturing method, and expansion sheet expanding method |
MYPI2017701817A MY177238A (en) | 2016-06-01 | 2017-05-19 | Expansion sheet, expansion sheet manufacturing method, and expansion sheet expanding method |
KR1020170065425A KR102181999B1 (ko) | 2016-06-01 | 2017-05-26 | 확장 시트, 확장 시트의 제조 방법 및 확장 시트의 확장 방법 |
US15/608,477 US10103055B2 (en) | 2016-06-01 | 2017-05-30 | Expansion sheet, expansion sheet manufacturing method, and expansion sheet expanding method |
DE102017209185.1A DE102017209185A1 (de) | 2016-06-01 | 2017-05-31 | Ausdehnungsfolie, Herstellungsverfahren für eine Ausdehnungsfolie und Verfahren zum Ausdehnen einer Ausdehnungsfolie |
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TWI728103B (zh) | 2021-05-21 |
TW201743404A (zh) | 2017-12-16 |
US20170352588A1 (en) | 2017-12-07 |
KR20170136431A (ko) | 2017-12-11 |
US10103055B2 (en) | 2018-10-16 |
MY177238A (en) | 2020-09-09 |
KR102181999B1 (ko) | 2020-11-23 |
DE102017209185A1 (de) | 2017-12-07 |
SG10201704118WA (en) | 2018-01-30 |
JP6710457B2 (ja) | 2020-06-17 |
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