JP6133152B2 - 樹脂シート貼着方法 - Google Patents
樹脂シート貼着方法 Download PDFInfo
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- JP6133152B2 JP6133152B2 JP2013144182A JP2013144182A JP6133152B2 JP 6133152 B2 JP6133152 B2 JP 6133152B2 JP 2013144182 A JP2013144182 A JP 2013144182A JP 2013144182 A JP2013144182 A JP 2013144182A JP 6133152 B2 JP6133152 B2 JP 6133152B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B2037/0092—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding in which absence of adhesives is explicitly presented as an advantage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
- B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/20—Presence of organic materials
- C09J2400/22—Presence of unspecified polymer
- C09J2400/226—Presence of unspecified polymer in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/20—Presence of organic materials
- C09J2400/22—Presence of unspecified polymer
- C09J2400/228—Presence of unspecified polymer in the pretreated surface to be joined
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
Description
また、樹脂シートの表面に塗布される粘着剤の厚みにはバラツキがあり均一な厚みでウエーハに樹脂シートを貼着することができないため、次のような問題がある。即ち、ウエーハの表面に樹脂シートを貼着して裏面を研削する場合にはウエーハを均一な厚みに研削することができないとともに、ウエーハの裏面に樹脂シートを貼着してウエーハの表面に形成された分割予定ラインに沿って切削する場合にはウエーハの表面から均一な深さの切削溝を形成することができない。
樹脂シートの表面に真空紫外線を照射して樹脂シートの表面から数十nmの深さに渡り分子間結合を切断し低分子量化処理を施して粘着力を生成する低分子量化処理工程と、
低分子量化処理が施された樹脂シートの表面を被加工物に貼着する樹脂シート貼着工程と、を含む、
ことを特徴とする樹脂シート貼着方法が提供される。
被加工物は表面に複数のデバイスが形成されたウエーハであり、上記樹脂シート貼着工程はウエーハの表面または裏面に樹脂シートの表面を貼着する。
また、被加工物は表面に複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域を備えたウエーハであり、上記低分子量化処理工程は樹脂シートの表面におけるウエーハの外周余剰領域に対応する領域のみに低分子量化処理を施す。
また、樹脂シートの表面に粘着剤が塗布されないので、粘着剤の厚みバラツキに起因してウエーハ等の被加工物を均一な厚みに研削できないという問題や、ウエーハ等の被加工物の表面から均一な深さの切削溝を形成することができないという問題を解消することができる。
先ず、半導体ウエーハ2の表面2aに貼着する樹脂シートの表面に真空紫外線を照射して樹脂シートの表面から数十nmの深さに渡り分子間結合を切断し低分子量化処理を施して粘着力を生成する低分子量化処理工程を実施する。この低分子量化処理工程は、図2に示す低分子量化処理装置3を用いて実施する。低分子量化処理装置3は、上端が開放した処理ケース31と、該処理ケース31の上端を閉塞するケース蓋32と、処理ケース31内に配設され被加工物を載置する被加工物載置テーブル33と、ケース蓋32の内面に配設された真空紫外線照射ランプ34とからなっている。このように構成された低分子量化処理装置3の処理ケース31は、減圧手段35に連通されている。また、上記真空紫外線照射ランプ34は、図示の実施形態においては真空紫外線の波長が172nmで出力が100Wのエキシマランプが用いられている。なお、真空紫外線照射ランプとしては、波長が200〜10nmの真空紫外線を照射するランプを用いることができる。
図5に示す実施形態における低分子量化処理工程は、上記図1に示す半導体ウエーハ2の表面2aに形成されるデバイス22が微小電気機械システム(MEMS)の場合に実施される。即ち、デバイスが微小電気機械システム(MEMS)の場合には、半導体ウエーハの表面に保護部材としての樹脂シートを貼着すると、樹脂シートを剥離する際に微小電気機械システム(MEMS)が破壊するという問題がある。従って、この問題を解消するためには、図1に示す半導体ウエーハ2の表面2aにおけるデバイス領域23を囲繞する外周余剰領域24に対応する領域のみに粘着層を有しデバイス領域23に対応する領域には粘着層を有しない樹脂シートを用いる必要がある。
この実施形態においては、図7の(a)乃至(c)に示すように樹脂シート4は、半導体ウエーハ2の直径より大きいとともに環状のフレーム6の内径より大きい外径を有している。このように形成された樹脂シート4は、上記図2に示す低分子量化処理装置3を用いて低分子量化処理工程が実施され、表面4aに粘着層41が形成されている。このように表面4aに粘着層41が形成された樹脂シート4を半導体ウエーハ2の裏面2bに貼着するとともに外周部を環状のフレーム6に装着するには、図7の(a)に示すように保持テーブル7上に環状のフレーム6を載置するとともに、該環状のフレーム6の中央部に半導体ウエーハ2を配置する。このとき、半導体ウエーハ2は、裏面2bを上側にして表面2a側を保持テーブル7上に載置する。次に、図7の(b)に示すように低分子量化処理工程が実施された樹脂シート4の表面4aに生成された粘着層41側を半導体ウエーハ2の裏面2bに貼着するとともに、外周部を環状のフレーム6に装着する。このようにして樹脂シート貼着工程が実施された半導体ウエーハ2は、図7の(c)に示すように表面2aが露出された状態で樹脂シート4を介して環状のフレーム6に支持された状態となる。
23:デバイス領域
24:外周余剰領域
3:低分子量化処理装置
31:処理ケース
32:ケース蓋
33:被加工物載置テーブル
34:真空紫外線照射ランプ
35:減圧手段
4:樹脂シート
41:粘着層
5:マスク
6:環状のフレーム
Claims (4)
- 樹脂シートを被加工物に貼着する樹脂シート貼着方法であって、
樹脂シートの表面に真空紫外線を照射して樹脂シートの表面から数十nmの深さに渡り分子間結合を切断し低分子量化処理を施して粘着力を生成する低分子量化処理工程と、
低分子量化処理が施された樹脂シートの表面を被加工物に貼着する樹脂シート貼着工程と、を含む、
ことを特徴とする樹脂シート貼着方法。 - 該低分子量化処理は、エキシマランプによって波長が200〜10nmの真空紫外線を照射する、請求項1記載の樹脂シート貼着方法。
- 被加工物は表面に複数のデバイスが形成されたウエーハであり、該樹脂シート貼着工程はウエーハの表面または裏面に樹脂シートの表面を貼着する、請求項1又は2記載の樹脂シート貼着方法。
- 被加工物は表面に複数のデバイスが形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域を備えたウエーハであり、該低分子量化処理工程は該樹脂シートの表面におけるウエーハの外周余剰領域に対応する領域のみに低分子量化処理を施す、請求項1又は2記載の樹脂シート貼着方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013144182A JP6133152B2 (ja) | 2013-07-10 | 2013-07-10 | 樹脂シート貼着方法 |
TW103118072A TWI613085B (zh) | 2013-07-10 | 2014-05-23 | 樹脂片貼著方法 |
KR1020140074687A KR102163439B1 (ko) | 2013-07-10 | 2014-06-19 | 수지 시트 접착 방법 |
CN201410320031.5A CN104282581B (zh) | 2013-07-10 | 2014-07-07 | 树脂片粘贴方法 |
US14/325,820 US9627241B2 (en) | 2013-07-10 | 2014-07-08 | Resin sheet attaching method |
DE102014213433.1A DE102014213433A1 (de) | 2013-07-10 | 2014-07-10 | Harzblattanbringverfahren |
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JP2013144182A JP6133152B2 (ja) | 2013-07-10 | 2013-07-10 | 樹脂シート貼着方法 |
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JP2015018890A JP2015018890A (ja) | 2015-01-29 |
JP6133152B2 true JP6133152B2 (ja) | 2017-05-24 |
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JP (1) | JP6133152B2 (ja) |
KR (1) | KR102163439B1 (ja) |
CN (1) | CN104282581B (ja) |
DE (1) | DE102014213433A1 (ja) |
TW (1) | TWI613085B (ja) |
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CN108983383A (zh) * | 2017-06-02 | 2018-12-11 | 康达智株式会社 | 摄像镜头单元及其制造方法 |
JP2021012936A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社ディスコ | 光デバイスの移設方法 |
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JP2003144913A (ja) * | 2001-11-13 | 2003-05-20 | Ushio Inc | 誘電体バリア放電ランプによる処理装置、および処理方法 |
JP2004119780A (ja) * | 2002-09-27 | 2004-04-15 | Nitto Denko Corp | 半導体ウエハの加工方法 |
JP4030897B2 (ja) * | 2003-03-07 | 2008-01-09 | 株式会社クラレ | プラスチックの接着方法 |
JP4464668B2 (ja) | 2003-12-03 | 2010-05-19 | 株式会社ディスコ | ダイシング方法,及びダイシング装置 |
US20060162850A1 (en) * | 2005-01-24 | 2006-07-27 | Micron Technology, Inc. | Methods and apparatus for releasably attaching microfeature workpieces to support members |
JP4760315B2 (ja) * | 2005-11-09 | 2011-08-31 | ウシオ電機株式会社 | 接合方法 |
JP2009107084A (ja) | 2007-10-31 | 2009-05-21 | Disco Abrasive Syst Ltd | 研削装置 |
JP2009147251A (ja) * | 2007-12-18 | 2009-07-02 | Denki Kagaku Kogyo Kk | 半導体部材のダイシング方法および電子部品の製造方法 |
JP5576040B2 (ja) * | 2007-12-27 | 2014-08-20 | アルプス電気株式会社 | 樹脂物品の剥離方法およびマイクロチップの剥離方法 |
US8246774B2 (en) * | 2007-12-27 | 2012-08-21 | Alps Electric Co., Ltd. | Resin bonding method by photoirradiation, method for producing resin article, resin article produced by the same method, method for producing microchip, and microchip produced by the same method |
JP6159050B2 (ja) * | 2010-07-26 | 2017-07-05 | 東京応化工業株式会社 | 接着剤組成物及び接着フィルム |
JP2012232446A (ja) * | 2011-04-28 | 2012-11-29 | Dainippon Printing Co Ltd | 積層体およびその製造方法 |
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- 2014-05-23 TW TW103118072A patent/TWI613085B/zh active
- 2014-06-19 KR KR1020140074687A patent/KR102163439B1/ko active IP Right Grant
- 2014-07-07 CN CN201410320031.5A patent/CN104282581B/zh active Active
- 2014-07-08 US US14/325,820 patent/US9627241B2/en active Active
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Also Published As
Publication number | Publication date |
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TWI613085B (zh) | 2018-02-01 |
CN104282581B (zh) | 2019-02-15 |
TW201501940A (zh) | 2015-01-16 |
DE102014213433A1 (de) | 2015-01-15 |
KR102163439B1 (ko) | 2020-10-08 |
KR20150007209A (ko) | 2015-01-20 |
JP2015018890A (ja) | 2015-01-29 |
CN104282581A (zh) | 2015-01-14 |
US9627241B2 (en) | 2017-04-18 |
US20150013897A1 (en) | 2015-01-15 |
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