CN104733385B - 器件晶片的加工方法 - Google Patents

器件晶片的加工方法 Download PDF

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CN104733385B
CN104733385B CN201410768052.3A CN201410768052A CN104733385B CN 104733385 B CN104733385 B CN 104733385B CN 201410768052 A CN201410768052 A CN 201410768052A CN 104733385 B CN104733385 B CN 104733385B
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沟本康隆
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Abstract

提供器件晶片的加工方法，能够实现切割装置的小型化。在槽形成步骤中，在器件晶片的正面形成规定深度的槽，在板粘贴步骤中，借助粘结剂(31)将板(20)粘贴到器件晶片的正面，在磨削步骤中，隔着板(20)将器件晶片保持在保持工作台上，对露出的器件晶片的背面进行磨削来使槽在器件晶片的背面露出，从而分割器件晶片，形成多个芯片(15a～15c)。在膜粘贴步骤中，在器件晶片的背面粘贴膜，在切割步骤中，从背面(102)一侧沿着分割预定线(13)分割膜，在拾取步骤中，从板(20)上拾取各芯片(15a～15c)。板(20)是与器件晶片(10)大致相同的尺寸，因此即使器件晶片(10)大口径化，也能够抑制切割装置大型化。

Description

器件晶片的加工方法
技术领域
本发明涉及对在正面形成有多个器件的器件晶片进行加工的加工方法。
背景技术
在切割器件晶片时，对在正面形成有多个器件的器件晶片的背面粘贴切割带，所述切割带被粘贴于具有比器件晶片的外径大的内径的开口的、环状的框架，由此，借助切割带将器件晶片安装于框架，然后将器件晶片分割成针对各器件的芯片，由此能够防止被分割而单片化了的芯片变得散乱，使分割前的器件晶片和分割后的芯片的处理容易(例如，参照专利文献1)。
专利文献1：日本特开2003-243483号公报
但是，以往的切割装置利用输送构件保持并输送比器件晶片大的框架，因此这是导致装置大型化的主要原因。特别地，在器件晶片是大口径(例如直径450mm)的情况下，框架变得更大，因此存在切割装置大型化的问题。另一方面，对于切割装置，存在希望小型化的要求。
发明内容
由此，本发明的目的在于提供能够利用小型的切割装置切割大口径的器件晶片的器件晶片的加工方法。
本发明的器件晶片的加工方法用于对器件晶片进行加工，在所述器件晶片的正面的由交叉的多条分割预定线划分出的各区域分别形成有器件，所述器件晶片的加工方法具备如下步骤：槽形成步骤，从器件晶片的正面沿着该分割预定线形成到达器件晶片的加工结束厚度的深度的槽；板粘贴步骤，在实施该槽形成步骤后，借助粘结剂将板粘贴到器件晶片的正面；磨削步骤，隔着该板将器件晶片保持在保持工作台上并使器件晶片的背面露出，利用磨削构件对器件晶片的背面进行磨削而减薄至该加工结束厚度，由此使该槽在器件晶片的背面露出，将器件晶片分割成各个芯片；膜粘贴步骤，在实施该磨削步骤后，将膜粘贴到器件晶片的背面；切割步骤，在实施该膜粘贴步骤后，从器件晶片的背面侧沿着该分割预定线切割该膜来形成在背面粘贴有膜的多个芯片；以及拾取步骤，在实施该切割步骤后，从该板上拾取各个芯片。
优选的是，所述粘结剂是通过施加外部刺激而粘结力下降的粘结剂，在所述拾取步骤中，在对该粘结剂施加该外部刺激后，拾取芯片。并且，优选的是，在所述拾取步骤中，在对所述粘结剂中的与第一芯片对应的区域施加所述外部刺激并拾取该第一芯片后，对该粘结剂中的与接下来拾取的第二芯片对应的区域施加该外部刺激并拾取该第二芯片。
发明效果
根据本发明的器件晶片的加工方法，将器件晶片粘贴于板而不是切割带，并在该状态下进行磨削，分割成各个芯片。通常使用的环状的框架比器件晶片大，与此相对地，板是与器件晶片大致相同的尺寸，因此即使器件晶片大口径化，也能够抑制切割装置大型化。并且，板成为在背面磨削时保护器件的保护部件，因此在磨削步骤中不需要对器件晶片另行粘贴正面保护部件，由此，能够提高生产率，并削减加工成本。
作为粘结剂，使用通过施加外部刺激而粘结力下降的粘结剂，并在拾取步骤中在对粘结剂施加外部刺激后拾取芯片，由此拾取变得容易。
在拾取步骤中，在对粘结剂中的与第一芯片对应的区域施加外部刺激并拾取第一芯片后，对该粘结剂中的与接下来拾取的第二芯片对应的区域施加外部刺激并拾取该第二芯片，由此通过仅对要拾取的芯片施加外部刺激，能够防止拾取前的芯片被剥离而变得散乱。
附图说明
图1是示出器件晶片的立体图。
图2是示出槽形成步骤的立体图。
图3是示出形成有槽的器件晶片的立体图。
图4是示出在板上涂布粘结剂的情形的立体图。
图5是示出粘贴有板的器件晶片的立体图。
图6是示出磨削步骤的立体图。
图7是示出膜粘贴步骤的立体图。
图8是示出切割步骤的立体图。
图9是示出在拾取步骤中使粘结剂的粘结力下降的情形的侧视剖视图。
图10是示出在拾取步骤中拾取芯片的情形的侧视剖视图。
标号说明
10：器件晶片；
101：正面；
102：背面；
12：器件；
13：分割预定线；
15、15a～15c：芯片；
20：板；
201：表面；
30：粘结剂涂布构件；
31：粘结剂；
40：磨削装置；
41：保持工作台；
411：保持面；
419、429：旋转轴线；
42：磨削构件；
421：轴部；
422：固定件；
423：磨削轮；
43：磨削磨具；
50：切削装置；
51：切削构件；
519：旋转轴线；
52：切削刀具；
55：槽；
60：激光照射装置；
61：激光放射构件；
62：摄像构件；
63：激光光线；
70：外部刺激施加装置；
71：光罩；
72：光源；
73：紫外线；
80：拾取装置；
81：夹头；
90、95：膜。
具体实施方式
图1所示的器件晶片10形成为圆板状，并且在正面101形成有多个器件12。各器件12形成在正面101的由交叉的多条分割预定线13划分出的各区域内。通过沿着分割预定线13切断器件晶片10，器件晶片10针对器件12被分割，从而形成多个芯片。
(1)槽形成步骤
如图2所示，使用具备放射激光光线63的激光放射构件61、和对器件晶片10的正面101进行摄像的摄像构件62的激光照射装置60，利用摄像构件62拍摄并检测分割预定线13，使器件晶片10和激光放射构件61沿X轴方向相对移动，并且在检测出的位置，朝向器件晶片10的正面101照射相对于器件晶片12具有吸收性的波长的激光光线，由此沿着分割预定线13进行烧蚀加工，形成槽55。
通过沿着全部的分割预定线13进行同样的烧蚀加工，如图3所示，沿着全部的分割预定线13形成槽55。槽55的深度是到达分割器件晶片10形成的芯片的加工结束厚度的深度，并且是比该加工结束厚度略深的程度。
(2)板粘贴步骤
在实施槽形成步骤后，如图4所示，利用粘结剂涂布构件30将粘结剂31滴落到圆板状的板20的表面201，例如通过旋涂进行涂布。板20例如由玻璃等不容易变形且透过紫外线的材料形成。对于粘结剂31，使用通过照射紫外线而粘结力下降，从而能够容易地剥离的粘结剂。例如，使用混入有借助紫外线的照射而膨胀或发泡的微胶囊或发泡剂等的粘结剂31。粘结剂涂布构件30也可以构成为将液状或凝胶状的粘结剂31滴落到板20，也可以构成为将形成为片状的粘结剂31粘贴到板20的表面201的结构。
接下来，如图5所示，将器件晶片10的上下翻转，使正面101与板20的表面201面对地贴合，使器件晶片10的背面102露出。由此，借助粘结剂31在器件晶片10的正面101粘贴有板20。
(3)磨削步骤
接下来，如图6所示，磨削装置40具备保持器件晶片10的保持工作台41和对保持于保持工作台41的器件晶片10进行磨削的磨削构件42，使用该磨削装置40，使粘贴于器件晶片10的板20侧在下，使背面102露出地载置到保持工作台41的保持面411上，从而利用保持工作台41隔着板20地保持器件晶片10。
磨削构件42具备：轴部(主轴)421；固定件422，其安装于轴部421的下端；以及磨削轮423，其安装于固定件422并具有呈圆环状固定安装的多个磨削磨具43。
使保持工作台41以旋转轴线419为中心旋转，同时使安装于磨削构件42的磨削磨具43以旋转轴线429为中心旋转，并且使磨削磨具43抵接于器件晶片10的背面102，来对器件晶片10的背面102进行磨削。由此，将器件晶片10减薄。磨削装置40对器件晶片10进行磨削，直至器件晶片10成为芯片的加工结束厚度。这样，在槽形成步骤中形成的槽55在器件晶片10的背面102露出，器件晶片10被分割，从而形成多个芯片。
(4)膜粘贴步骤
在实施磨削步骤后，如图7所示，在分割器件晶片10而形成的多个芯片15的背面102侧粘贴贴片用膜(DAF：Die Attach Film，芯片粘结膜)或加强膜(DBF:Die BacksideFilm，芯片背面膜)等膜90。
(5)切割步骤
在实施膜粘贴步骤后，使用图8所示的切削装置50来分割膜90。切削装置50具有切削构件51，切削构件51具有能够以Y轴方向的旋转轴线519为中心旋转的切削刀具52，并且一边使安装于切削构件51的切削刀具52以旋转轴线519为中心旋转，一边从器件晶片10的背面102侧使旋转的切削刀具52沿着分割预定线13切入膜90，从而对膜90进行切割。由此，膜90被分割，形成多个在背面粘贴有被分割开的膜的芯片。
(6)拾取步骤
在实施切割步骤后，如图9所示，使用在光罩71中具备放射紫外线的发光二极管等光源72的紫外线照射装置等外部刺激施加装置70，对粘结剂31施加外部刺激，使粘结剂31的粘结力下降。
外部刺激施加装置70对粘结剂31中的与1个芯片(例如第一芯片15a)对应的区域照射紫外线。光罩71将光源72放射出的紫外线遮挡住，以使外部刺激不会施加到与其他芯片(例如第二芯片15b、第三的芯片15c)对应的区域。外部刺激施加装置70也可以是具备透镜的结构，所述透镜使光源72放射出的紫外线聚集到与1个芯片对应的区域。
在对与第一芯片15a对应的粘结剂31的区域照射紫外线后，如图10所示，使用具备夹头81的拾取装置80，从板20上拾取对应区域中的粘结剂31的粘结力下降了的芯片15a。然后，使外部刺激施加装置70和器件晶片10相对地移动，外部刺激施加装置70对粘结剂31中的与接下来拾取的第二芯片15b对应的区域施加外部刺激。然后，在利用拾取装置80拾取第二芯片15b之后，外部刺激施加装置70对与接下来的第三芯片15c对应的区域施加外部刺激。
这样，一个一个地按顺序拾取芯片。仅对与1个芯片对应的区域施加外部刺激，并在对应区域拾取被施加了外部刺激的芯片，并且重复上述动作。由此，拾取变得容易，并且，在拾取芯片时，由于粘结于正要拾取的芯片的粘结剂31的粘结力下降，所以能够容易地拾取，并且，由于粘结于除此之外的芯片的粘结剂31的粘结力没有下降，所以能够防止尚未轮到进行拾取的次序的芯片不经意地剥离而变得散乱。
另外，在槽形成步骤中形成槽55的方法不限于照射激光光线63的方法，例如也可以是利用切削刀具进行半切(half cut)的方法或基于等离子蚀刻的方法等其他方法。
并且，在板粘贴步骤中，在板20上涂布粘结剂31来粘贴器件晶片10，但粘结剂也可以是片状，例如可以采用双面胶带的形式。在该情况下，双面胶带的一个面的糊层与板20粘结，另一面的糊层为借助外部刺激而粘结力下降的粘结剂面，并粘结于器件晶片10。并且，粘结剂只要是通过施加外部刺激而粘结力下降的结构即可，例如可以是通过加热而粘着力下降的结构，不关乎外部刺激的种类。在外部刺激不是紫外线的照射的情况下，板20不必由透过紫外线的材料形成，因此例如也可以由硅形成。
在切割步骤中，只要将膜90完全切断并切入至能够分割成多个膜95的深度即可，可以是切入至板20的结构，也可以是不切入至板20的结构。如果是不切入到板20的结构，则能够对板20再利用，能够削减成本，因此是优选的。另外，在切割步骤中分割器件晶片10的方法不限于利用切削刀具52进行切削的方法，例如也可以是照射激光光线的方法等其他的方法。

Claims (1)

1.一种器件晶片的加工方法，其用于对器件晶片进行加工，在所述器件晶片的正面的由交叉的多条分割预定线划分出的各区域分别形成有器件，
所述器件晶片的加工方法具备如下步骤：
槽形成步骤，从器件晶片的正面沿着该分割预定线形成到达器件晶片的加工结束厚度的深度的槽；
板粘贴步骤，在实施该槽形成步骤后，借助粘结剂将板粘贴到器件晶片的正面；
磨削步骤，隔着该板将器件晶片保持在保持工作台上并使器件晶片的背面露出，利用磨削构件对器件晶片的背面进行磨削而减薄至该加工结束厚度，由此使该槽在器件晶片的背面露出，将器件晶片分割成各个芯片；
膜粘贴步骤，在实施该磨削步骤后，将膜粘贴到器件晶片的背面；
切割步骤，在实施该膜粘贴步骤后，从器件晶片的背面侧沿着该分割预定线切割该膜来形成在背面粘贴有膜的多个芯片；以及
拾取步骤，在实施该切割步骤后，直接从粘贴着器件晶片的正面的该板上拾取各个芯片，从而得到多个在背面粘贴有被分割开的所述膜的芯片，
由此，在不使用对内径比器件晶片的外径大的环状框架进行保持并输送的以往切割装置的情况下，就能够将器件晶片分割成多个在背面粘贴有所述膜的芯片。
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