TW201633443A - 加工裝置的工作夾台 - Google Patents

加工裝置的工作夾台 Download PDF

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TW201633443A
TW201633443A TW104144461A TW104144461A TW201633443A TW 201633443 A TW201633443 A TW 201633443A TW 104144461 A TW104144461 A TW 104144461A TW 104144461 A TW104144461 A TW 104144461A TW 201633443 A TW201633443 A TW 201633443A
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wafer
diameter
annular
outer peripheral
adhesive tape
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Masahiro Tsukamoto
Ken Togashi
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Disco Corp
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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Abstract

本發明的課題為提供一種即使黏著膠帶的黏著層抵接也可抑制黏著膠帶的黏附之加工裝置的工作夾台。解決手段是將透過黏著膠帶而於環狀框架開口固定有晶圓的框架單元，藉由以保持面吸引晶圓的露出之面來加以保持的加工裝置的工作夾台，其特徵在於具備：構成形成有與吸引源連通的複數個吸引孔之該保持面的圓形區域、及圍繞該圓形區域的環狀的外周區域，該圓形區域小於晶圓之直徑，該外周區域形成為大於晶圓之直徑，並小於該環狀框架之內徑，且在與該黏著膠帶接觸的該外周區域之上表面形成有抑制該黏著膠帶的黏附的凹部。

Description

加工裝置的工作夾台 發明領域
本發明是有關於雷射加工裝置、切削裝置等的加工裝置的工作夾台。
發明背景
在半導體晶圓或是藍寶石、SiC、GaN等之磊晶基板上形成有發光層的光元件晶圓等近年來所開始採用的加工方法為：將對晶圓具有穿透性之波長的雷射光束於晶圓內部定位出聚光點來照射，以在晶圓內部形成改質層，接著，對晶圓賦予外力而將改質層作為斷裂起點將晶圓分割成一個個的元件晶片(例如，參照日本專利特許第3408805號公報)。
此加工方法中，其條件為不將會使雷射光束的能量衰減的物質(例如，構成元件之形成各種圖案的材料)形成於雷射光束的照射面側。為此，對於在表面形成有複數個元件的晶圓，一般所實施的作法是從無元件的背面側照射雷射光束，以在內部形成改質層。
此時，即使是在無法從形成有元件的晶圓之表面側照射雷射光束的情況下，也是與在通常的加工上所使用 者同樣地形成將晶圓的背面貼附到黏著膠帶，並透過黏著膠帶以環狀框架支持晶圓的框架單元。並且，也有採用將晶圓之表面載置於工作夾台之保持面，而將雷射光束經過黏著膠帶地進行照射的方法之情況。
先行技術文件 專利文獻
專利文獻1：日本專利特許第3408805號公報
發明概要
然而，在此加工法中，由於黏著膠帶之黏著層於較晶圓之外周更外側處與工作夾台重疊，因此存在下列課題：在晶圓的外周露出的黏著層會黏附於工作夾台之外周部分，因而引發加工後的搬送錯誤。
雖然也有提出將多孔質片材載置於工作夾台之保持面上來覆蓋保持面的方法作為其對策，但會有必須將工作夾台變更成特殊規格、或是準備多孔質片材的問題。
本發明是有鑑於諸如此點而作成的發明，其目的為提供一種即使黏著膠帶之黏著層抵接也可以抑制黏著膠帶的黏附之加工裝置的工作夾台。
依據本發明而提供的加工裝置的工作夾台，是將透過黏著膠帶而於環狀框架的開口固定有晶圓的框架單元，藉由以保持面吸引晶圓的露出之面來加以保持，其特 徵在於具備：構成形成有與吸引源連通的複數個吸引孔之該保持面的圓形區域、及圍繞該圓形區域的環狀的外周區域，該圓形區域小於晶圓之直徑，該外周區域形成為大於晶圓之直徑，並小於該環狀框架之內徑，且在與該黏著膠帶接觸的該外周區域之上表面形成有抑制該黏著膠帶的黏附的凹部。
較佳的，前述凹部是由形成為與環狀的外周區域同心的環狀凹部所構成。或者，前記凹部是由直徑小於外周區域的寬度的複數個小徑凹部所構成。
依據本發明之加工裝置的工作夾台，由於構成將保持面形成為比晶圓小徑，且在較保持面更外周處與黏著膠帶接觸的環狀區域形成凹部，因此可削減黏著膠帶之黏著層與工作夾台之環狀區域的接觸面積，而可解決黏著膠帶的黏附問題。又，因為不需要多孔質片材，所以也具有帶來大幅的成本削減的效果。
10‧‧‧滾珠螺桿
11‧‧‧半導體晶圓
11a‧‧‧表面
11b‧‧‧背面
12‧‧‧脈衝馬達
13‧‧‧分割預定線
14‧‧‧Y軸進給機構
15‧‧‧元件
16‧‧‧導軌
17‧‧‧框架單元
18‧‧‧X軸移動塊
19‧‧‧基材
2‧‧‧雷射加工裝置
20‧‧‧滾珠螺桿
21‧‧‧黏著層
22‧‧‧脈衝馬達
23‧‧‧改質層
24、24A‧‧‧工作夾台
26‧‧‧夾具
28‧‧‧X軸進給機構
30‧‧‧圓筒狀支持構件
32‧‧‧支柱
34‧‧‧雷射光線照射單元
36‧‧‧套殼
38‧‧‧聚光器
4‧‧‧靜止基台
40‧‧‧攝影單元
50‧‧‧聚光器
51‧‧‧聚光透鏡
58‧‧‧保持面(圓形區域)
6‧‧‧導軌
60‧‧‧框體
60a‧‧‧環狀的外周區域
62‧‧‧環狀凹部
64‧‧‧小徑凹部
8‧‧‧Y軸移動塊
T‧‧‧切割膠帶(黏著膠帶)
F‧‧‧環狀框架
X、Y、Z‧‧‧方向
X1‧‧‧箭頭
圖1是雷射加工裝置之立體圖。
圖2(A)是透過黏著膠帶在環狀框架之開口固定有晶圓的框架單元之立體圖，圖2(B)是黏著膠帶之截面圖。
圖3是第1實施形態的工作夾台之立體圖，顯示晶圓的大小與工作夾台之保持面的大小的關係。
圖4是第1實施形態的工作夾台之截面圖。
圖5是第2實施形態的工作夾台之立體圖。
圖6是第2實施形態的工作夾台之截面圖。
用以實施發明之形態
以下將參照圖式，以詳細說明本發明的實施形態。圖1所示為雷射加工裝置2的概要構成圖。雷射加工裝置2包含有搭載於靜止基台4上之朝Y軸方向伸長的一對導軌6。
Y軸移動塊8是利用由滾珠螺桿10及脈衝馬達12所構成的Y軸進給機構(Y軸進給件)14，而朝分度進給方向(亦即Y軸方向)移動。Y軸移動塊8上固定有朝X軸方向伸長的一對導軌16。
X軸移動塊18是利用由滾珠螺桿20及脈衝馬達22所構成的X軸進給機構(X軸進給件)28，而受導軌16所導引而朝加工進給方向(亦即X軸方向)移動。
X軸移動塊18上是透過圓筒狀支持構件30而搭載有工作夾台24。工作夾台24上配設有可夾持圖2所示之環狀框架F的複數個(在本實施形態中為4個)夾具26。
基座4的後方豎立設置有支柱32。支柱32上固定有雷射光束照射單元34之套殼36。套殼36中收容有包含了YAG雷射振盪器等的雷射光束振盪件，套殼36的前端裝設有將雷射光束聚光於應加工之晶圓上的聚光器(雷射頭)38。
雷射光束照射單元34之套殼36的前端裝設有拍攝工作夾台24所保持的晶圓11之攝影單元40。聚光器38與攝影單元40是在X軸方向上成行而被配設。
如圖2(A)所示，在作為雷射加工裝置2之加工對象的半導體晶圓11的表面11a上，有形成為格子狀的複數個切割道13，且在由正交的切割道13所劃分出的各區域中形成有IC、LSI等的元件15。
晶圓11是貼附於作為黏著膠帶的切割膠帶T上，且將切割膠帶T之外周部貼附到環狀框架F。亦即，透過黏著膠帶(切割膠帶)T將晶圓11固定於環狀框架F之開口而形成框架單元17。如圖2(B)所示，切割膠帶T是於聚烯烴等樹脂所構成的基材19上塗佈黏著層21而形成。
參照圖3，所示為顯示當以本發明第1實施形態之工作夾台24保持晶圓11時，晶圓11之尺寸與構成工作夾台24之保持面的圓形區域58之大小的關係的立體圖。
工作夾台24具有由形成有與吸引源連通的複數個吸引孔之多孔質陶瓷等所構成的圓形區域之保持面58，保持面58受到由SUS等金屬所形成的框體60圍繞。圍繞圓形區域之保持面58的框體60之環狀的上表面(環狀的外周區域)60a上，形成有與環狀的外周區域60a同心的環狀凹部(環狀溝)62。
在圖3中，為了將晶圓11之尺寸與圓形的保持面58之大小關係清楚化，而將黏貼於晶圓11之背面11b的切割膠帶T、以及黏貼於切割膠帶T之外周的環狀框架省略。如從圖3可明顯看出地，圓形的保持面58a宜稍小於晶圓11之直徑而形成。
參照圖4，所示為藉由第1實施形態的工作夾台24 之保持面58以吸引保持晶圓11之表面11a側，且以夾具26夾持環狀框架F而形成固定的狀態之截面圖。
由於將切割膠帶T貼附於晶圓11之背面11b，且以工作夾台24之保持面58吸引保持晶圓11之表面11a側，因此切割膠帶T之黏著層21在晶圓11的半徑方向外側抵接於構成框體60之上表面的環狀的外周區域60a。
然而，在本實施形態的工作夾台24中，由於在環狀的外周區域60a上形成有環狀的凹部(環狀溝)62，因此可抑制切割膠帶T之對環狀的外周區域60a的黏附。
以工作夾台24之保持面58保持晶圓11後，則實施於晶圓11的內部形成改質層的改質層形成步驟。於此改質層形成步驟中，是將對切割膠帶T及晶圓11具有穿透性之波長(例如1064nm)的雷射光束，以聚光器50之聚光透鏡51將其聚光點聚光於晶圓11的內部，並且隔著切割膠帶T照射，且將工作夾台24朝箭頭X1方向加工進給，藉此於晶圓11之沿著分割預定線13的內部形成改質層23。
圖1中，一邊將工作夾台24朝Y軸方向分度進給，一邊沿著朝第1方向伸長的全部的分割預定線13在晶圓11的內部形成改質層23。接著，將工作夾台24做90度旋轉後，沿著朝正交於第1方向的第2方向伸長的全部的分割預定線13在晶圓11的內部形成改質層23。
改質層形成步驟結束後，會解除夾具26，並將框架單元17自工作夾台24剝離，此時由於工作夾台24之環狀的外周區域60a上形成有環狀凹部62，因此可抑制切割膠帶 T之對環狀的外周區域60a的黏附，並可不造成任何損傷而輕易地將框架單元17從工作夾台24剝離。
參照圖5，所示為有關本發明第2實施形態的工作夾台24A之立體圖。在本實施形態的工作夾台24A中，是將小於工作夾台24A之環狀的外周區域60a之寬度的複數個小徑凹部64形成在環狀的外周區域60a上。
因為像這樣將複數個小徑凹部64形成於工作夾台24A之環狀的外周區域60a上，因此可抑制切割膠帶T之黏著層21與環狀的外周區域60a的接觸。從而，可抑制切割膠帶T之對環狀的外周區域60a的黏附。
另外，在本實施形態中，雖然於環狀的外周區域60a形成有複數個圓形的小徑凹部64，但小徑凹部並不拘於該形狀。又，小徑凹部64的大小也可不同，也可將複數種大小的小徑凹部形成於環狀的外周區域60a。本實施形態之工作夾台24A中的改質層形成步驟，由於相同於上述之第1實施形態之改質層形成步驟，因此省略其說明。
另外，第1及第2實施形態之工作夾台24、24A，為了防止切割膠帶T黏附於環狀的外周區域60a，均宜預先塗佈鐵氟龍(註冊商標)等非黏著性高的樹脂。
在上述之實施形態中，雖然是針對將本發明之工作夾台應用於雷射加工裝置的例子進行了說明，但本發明並不受此限定，對於凡是實施加工時黏著膠帶之黏著層會接觸到工作夾台之上表面外周部的類型之任意的加工裝置皆可適用。
11‧‧‧半導體晶圓
19‧‧‧基材
21‧‧‧黏著層
23‧‧‧改質層
24‧‧‧工作夾台
26‧‧‧夾具
50‧‧‧聚光器
51‧‧‧聚光透鏡
58‧‧‧保持面(圓形區域)
60‧‧‧導軌
60a‧‧‧環狀的外周區域
62‧‧‧環狀凹部
T‧‧‧切割膠帶(黏著膠帶)
F‧‧‧環狀框架
X1‧‧‧箭頭

Claims (3)

  1. 一種加工裝置的工作夾台，是將透過黏著膠帶而於環狀框架的開口固定有晶圓的框架單元，藉由以保持面吸引晶圓的露出之面來加以保持，其特徵在於具備：圓形區域，構成形成有與吸引源連通的複數個吸引孔之該保持面；及環狀的外周區域，圍繞該圓形區域，該圓形區域小於晶圓之直徑，該外周區域形成為大於晶圓之直徑，並小於該環狀框架之內徑，且在與該黏著膠帶接觸的該外周區域之上表面形成有抑制該黏著膠帶的黏附的凹部。
  2. 如請求項1之加工裝置的工作夾台，其中該凹部是由形成為與該環狀的外周區域同心的環狀凹部所構成。
  3. 如請求項1之加工裝置的工作夾台，其中該凹部是由直徑小於該環狀的外周區域的寬度的複數個小徑凹部所構成，且分布於該外周區域之上表面。
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