JP2017157214A5 - - Google Patents

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JP2017157214A5
JP2017157214A5 JP2017033466A JP2017033466A JP2017157214A5 JP 2017157214 A5 JP2017157214 A5 JP 2017157214A5 JP 2017033466 A JP2017033466 A JP 2017033466A JP 2017033466 A JP2017033466 A JP 2017033466A JP 2017157214 A5 JP2017157214 A5 JP 2017157214A5
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memory array
interface
host device
memory
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JP2017157214A (ja
JP7022511B2 (ja
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JP2017033466A 2016-03-03 2017-02-24 インモジュール機能を遂行するメモリモジュール Active JP7022511B2 (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US201662303347P 2016-03-03 2016-03-03
US201662303343P 2016-03-03 2016-03-03
US201662303352P 2016-03-03 2016-03-03
US201662303349P 2016-03-03 2016-03-03
US62/303,352 2016-03-03
US62/303,347 2016-03-03
US62/303,343 2016-03-03
US62/303,349 2016-03-03
US201662347569P 2016-06-08 2016-06-08
US62/347,569 2016-06-08
US15/213,386 2016-07-18
US15/213,386 US10592114B2 (en) 2016-03-03 2016-07-18 Coordinated in-module RAS features for synchronous DDR compatible memory

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JP2017157214A JP2017157214A (ja) 2017-09-07
JP2017157214A5 true JP2017157214A5 (enExample) 2020-03-05
JP7022511B2 JP7022511B2 (ja) 2022-02-18

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JP2017033466A Active JP7022511B2 (ja) 2016-03-03 2017-02-24 インモジュール機能を遂行するメモリモジュール

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US (4) US10592114B2 (enExample)
JP (1) JP7022511B2 (enExample)
KR (1) KR102712052B1 (enExample)
CN (1) CN107153616B (enExample)
TW (2) TWI756767B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10592114B2 (en) * 2016-03-03 2020-03-17 Samsung Electronics Co., Ltd. Coordinated in-module RAS features for synchronous DDR compatible memory
KR102336666B1 (ko) 2017-09-15 2021-12-07 삼성전자 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
CN107507637B (zh) * 2017-09-18 2024-02-27 深圳市江波龙电子股份有限公司 一种低功耗双列直插式存储器及其增强驱动方法
CN111108488B (zh) * 2017-11-07 2022-05-10 华为技术有限公司 内存块回收方法和装置
KR102410022B1 (ko) * 2017-11-24 2022-06-21 에스케이하이닉스 주식회사 에러스크럽방법 및 이를 이용한 반도체모듈
WO2019109299A1 (zh) * 2017-12-07 2019-06-13 华为技术有限公司 内存访问技术及计算机系统
US10782908B2 (en) 2018-02-05 2020-09-22 Micron Technology, Inc. Predictive data orchestration in multi-tier memory systems
US11099789B2 (en) 2018-02-05 2021-08-24 Micron Technology, Inc. Remote direct memory access in multi-tier memory systems
US11416395B2 (en) 2018-02-05 2022-08-16 Micron Technology, Inc. Memory virtualization for accessing heterogeneous memory components
US12135876B2 (en) * 2018-02-05 2024-11-05 Micron Technology, Inc. Memory systems having controllers embedded in packages of integrated circuit memory
US10880401B2 (en) 2018-02-12 2020-12-29 Micron Technology, Inc. Optimization of data access and communication in memory systems
US10534731B2 (en) 2018-03-19 2020-01-14 Micron Technology, Inc. Interface for memory having a cache and multiple independent arrays
KR102658230B1 (ko) 2018-06-01 2024-04-17 삼성전자주식회사 반도체 메모리 장치, 이를 포함하는 메모리 시스템 및 반도체 메모리 장치의 동작 방법
US10877892B2 (en) 2018-07-11 2020-12-29 Micron Technology, Inc. Predictive paging to accelerate memory access
TWI686697B (zh) * 2018-07-26 2020-03-01 大陸商深圳大心電子科技有限公司 記憶體管理方法以及儲存控制器
TWI671632B (zh) * 2018-10-24 2019-09-11 財團法人工業技術研究院 記憶體裝置及其復新資訊同步方法
KR102649315B1 (ko) * 2018-12-03 2024-03-20 삼성전자주식회사 휘발성 메모리 장치를 포함하는 메모리 모듈 및 이를 포함하는 메모리 시스템
US11403035B2 (en) 2018-12-19 2022-08-02 Micron Technology, Inc. Memory module including a controller and interfaces for communicating with a host and another memory module
US10996890B2 (en) 2018-12-19 2021-05-04 Micron Technology, Inc. Memory module interfaces
US10789015B2 (en) * 2019-03-01 2020-09-29 Micron Technology, Inc. Background operations in memory
US10852949B2 (en) 2019-04-15 2020-12-01 Micron Technology, Inc. Predictive data pre-fetching in a data storage device
CN111143109B (zh) * 2019-12-16 2021-08-13 浙江大学 一种ecc内存管理器、方法及电子设备
US11200113B2 (en) * 2020-01-14 2021-12-14 Intel Corporation Auto-increment write count for nonvolatile memory
US11663124B2 (en) * 2020-02-25 2023-05-30 Micron Technology, Inc. Apparatuses and methods for interfacing on-memory pattern matching
KR102838666B1 (ko) * 2020-11-03 2025-07-24 삼성전자주식회사 메모리 모듈 및 메모리 모듈의 동작방법
TWI771926B (zh) * 2021-02-25 2022-07-21 慧榮科技股份有限公司 資料儲存裝置以及非揮發式記憶體控制方法
US11625343B2 (en) 2021-05-12 2023-04-11 Micron Technology, Inc. Memory with a communications bus for device-to-controller communication, and associated systems, devices, and methods
US12164803B2 (en) * 2021-05-21 2024-12-10 Micron Technology, Inc. Memory with memory-initiated command insertion, and associated systems, devices, and methods
JP7727190B2 (ja) * 2021-11-04 2025-08-21 富士通株式会社 メモリアクセスコントローラ及びメモリアクセスコントロール方法

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907867A (en) 1994-09-09 1999-05-25 Hitachi, Ltd. Translation lookaside buffer supporting multiple page sizes
KR960039006A (ko) 1995-04-26 1996-11-21 김광호 디램버스에 접속가능한 불휘발성 반도체 메모리장치
US6154821A (en) 1998-03-10 2000-11-28 Rambus Inc. Method and apparatus for initializing dynamic random access memory (DRAM) devices by levelizing a read domain
JP2001010865A (ja) 1999-06-23 2001-01-16 Ngk Insulators Ltd 窒化珪素焼結体及びその製造方法
JP3872922B2 (ja) 1999-06-28 2007-01-24 株式会社東芝 半導体記憶装置及びメモリ混載ロジックlsi
US6321282B1 (en) 1999-10-19 2001-11-20 Rambus Inc. Apparatus and method for topography dependent signaling
TW451193B (en) 1999-11-30 2001-08-21 Via Tech Inc A method to determine the timing setting value of dynamic random access memory
JP4078010B2 (ja) 2000-03-03 2008-04-23 株式会社日立グローバルストレージテクノロジーズ 磁気ディスク装置及び情報記録方法
US6445624B1 (en) 2001-02-23 2002-09-03 Micron Technology, Inc. Method of synchronizing read timing in a high speed memory system
JP4059002B2 (ja) 2001-06-13 2008-03-12 株式会社日立製作所 メモリ装置
TWI240864B (en) 2001-06-13 2005-10-01 Hitachi Ltd Memory device
EP1438662A2 (en) 2001-10-11 2004-07-21 Altera Corporation Error detection on programmable logic resources
US7269709B2 (en) 2002-05-15 2007-09-11 Broadcom Corporation Memory controller configurable to allow bandwidth/latency tradeoff
US6820181B2 (en) 2002-08-29 2004-11-16 Micron Technology, Inc. Method and system for controlling memory accesses to memory modules having a memory hub architecture
US7386768B2 (en) 2003-06-05 2008-06-10 Intel Corporation Memory channel with bit lane fail-over
JP2005234932A (ja) 2004-02-20 2005-09-02 Oki Electric Ind Co Ltd マトリックス状バス接続システムとその低電力方法
KR100564635B1 (ko) 2004-10-25 2006-03-28 삼성전자주식회사 메모리 모듈 내에서의 인터페이스 타이밍을 제어하는메모리 시스템 및 그 방법
US7620783B2 (en) 2005-02-14 2009-11-17 Qualcomm Incorporated Method and apparatus for obtaining memory status information cross-reference to related applications
US8619452B2 (en) 2005-09-02 2013-12-31 Google Inc. Methods and apparatus of stacking DRAMs
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
KR100660892B1 (ko) 2005-11-21 2006-12-26 삼성전자주식회사 더블 펌프드 어드레스 스킴의 메모리 장치에서 고속 동작을위해 확장된 유효 어드레스 윈도우로 유효 커맨드를샘플링하는 회로 및 방법
US7461231B2 (en) 2006-01-12 2008-12-02 International Business Machines Corporation Autonomically adjusting one or more computer program configuration settings when resources in a logical partition change
EP2450800B1 (en) 2006-02-09 2014-04-23 Google Inc. Memory circuit system and method
US7716411B2 (en) 2006-06-07 2010-05-11 Microsoft Corporation Hybrid memory device with single interface
US20080082750A1 (en) * 2006-09-28 2008-04-03 Okin Kenneth A Methods of communicating to, memory modules in a memory channel
US7894289B2 (en) * 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
JP4939234B2 (ja) * 2007-01-11 2012-05-23 株式会社日立製作所 フラッシュメモリモジュール、そのフラッシュメモリモジュールを記録媒体として用いたストレージ装置及びそのフラッシュメモリモジュールのアドレス変換テーブル検証方法
CN100514488C (zh) 2007-04-16 2009-07-15 中国人民解放军国防科学技术大学 采样点可配置的片外dram数据采样方法
US8427891B2 (en) 2007-04-17 2013-04-23 Rambus Inc. Hybrid volatile and non-volatile memory device with a shared interface circuit
US7827360B2 (en) 2007-08-02 2010-11-02 Freescale Semiconductor, Inc. Cache locking device and methods thereof
JP2009054116A (ja) * 2007-08-29 2009-03-12 Buffalo Inc メモリシステムおよび情報処理装置
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8359521B2 (en) 2008-01-22 2013-01-22 International Business Machines Corporation Providing a memory device having a shared error feedback pin
US20100005214A1 (en) 2008-07-01 2010-01-07 International Business Machines Corporation Enhancing bus efficiency in a memory system
CN102177551B (zh) 2008-08-08 2015-05-20 惠普开发有限公司 与标准存储器模块管脚兼容的存储器模块中的独立可控制和可重新配置的虚拟存储器设备
JP5317657B2 (ja) 2008-12-04 2013-10-16 三洋電機株式会社 画像表示装置
CN101751226A (zh) 2008-12-08 2010-06-23 忆正存储技术(深圳)有限公司 非易失存储介质控制器以及非易失存储设备
US8064250B2 (en) 2008-12-16 2011-11-22 Micron Technology, Inc. Providing a ready-busy signal from a non-volatile memory device to a memory controller
US8261136B2 (en) * 2009-06-29 2012-09-04 Sandisk Technologies Inc. Method and device for selectively refreshing a region of a memory of a data storage device
TW201209820A (en) 2010-05-07 2012-03-01 Mosaid Technologies Inc Method and apparatus for concurrently reading a plurality of memory devices using a single buffer
US8411519B2 (en) 2010-06-04 2013-04-02 Apple Inc. Selective retirement of blocks
KR101796116B1 (ko) * 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
US9047178B2 (en) 2010-12-13 2015-06-02 SanDisk Technologies, Inc. Auto-commit memory synchronization
KR20120079682A (ko) 2011-01-05 2012-07-13 삼성전자주식회사 디램 캐시를 포함하는 메모리 장치 및 이를 포함하는 시스템
JP2012146360A (ja) 2011-01-12 2012-08-02 Renesas Electronics Corp 半導体集積回路及び書込処理方法
US9779020B2 (en) 2011-02-08 2017-10-03 Diablo Technologies Inc. System and method for providing an address cache for memory map learning
US9104547B2 (en) 2011-08-03 2015-08-11 Micron Technology, Inc. Wear leveling for a memory device
US9032162B1 (en) 2011-08-12 2015-05-12 Altera Corporation Systems and methods for providing memory controllers with memory access request merging capabilities
US8850155B2 (en) 2011-12-19 2014-09-30 Advanced Micro Devices, Inc. DDR 2D Vref training
US10902890B2 (en) 2012-06-22 2021-01-26 Intel Corporation Method, apparatus and system for a per-DRAM addressability mode
US9280497B2 (en) 2012-12-21 2016-03-08 Dell Products Lp Systems and methods for support of non-volatile memory on a DDR memory channel
JP2014157391A (ja) * 2013-02-14 2014-08-28 Sony Corp 記憶制御装置、記憶装置、情報処理システムおよび記憶制御方法
KR102039537B1 (ko) 2013-03-15 2019-11-01 삼성전자주식회사 불휘발성 저장 장치 및 그것의 운영체제 이미지 프로그램 방법
BR122016007765B1 (pt) 2013-03-15 2022-03-03 Intel Corporation Aparelho em comunicação com controlador de memória de host, aparelho acoplado a um módulo de memória e métodos para formar conjuntos eletrônicos
WO2014155593A1 (ja) 2013-03-27 2014-10-02 株式会社日立製作所 Sdramインターフェイスを有するdram、フラッシュメモリ混載メモリモジュール
CN104216837A (zh) 2013-05-31 2014-12-17 华为技术有限公司 一种内存系统、内存访问请求的处理方法和计算机系统
JP6165008B2 (ja) 2013-09-25 2017-07-19 キヤノン株式会社 メモリ制御装置、メモリ制御方法、情報機器及びプログラム
WO2015089054A1 (en) 2013-12-12 2015-06-18 Samsung Electronics Co., Ltd. Disaggregated memory appliance
KR102226367B1 (ko) 2014-01-02 2021-03-12 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함하는 불휘발성 메모리 시스템
US20150268959A1 (en) 2014-03-21 2015-09-24 Qualcomm Incorporated Physical register scrubbing in a computer microprocessor
US9354872B2 (en) 2014-04-24 2016-05-31 Xitore, Inc. Apparatus, system, and method for non-volatile data storage and retrieval
CN204332379U (zh) * 2014-07-17 2015-05-13 威盛电子股份有限公司 非易失性存储器的存储器控制器和固态驱动器
US10379926B2 (en) * 2014-08-05 2019-08-13 Macronix International Co., Ltd. Method and device for monitoring data error status in a memory
CN104409097B (zh) 2014-10-10 2017-10-13 北京航空航天大学 一种利用电源检测实现非易失性异步逻辑电路的低功耗控制方法
US9460791B1 (en) 2015-12-08 2016-10-04 Inphi Corporation Data clock synchronization in hybrid memory modules
US10592114B2 (en) * 2016-03-03 2020-03-17 Samsung Electronics Co., Ltd. Coordinated in-module RAS features for synchronous DDR compatible memory
US9830086B2 (en) 2016-03-03 2017-11-28 Samsung Electronics Co., Ltd. Hybrid memory controller for arbitrating access to volatile and non-volatile memories in a hybrid memory group
US10621119B2 (en) 2016-03-03 2020-04-14 Samsung Electronics Co., Ltd. Asynchronous communication protocol compatible with synchronous DDR protocol

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