KR102712052B1 - 인-모듈 기능들을 수행하는 메모리 모듈 - Google Patents

인-모듈 기능들을 수행하는 메모리 모듈 Download PDF

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KR102712052B1
KR102712052B1 KR1020170004297A KR20170004297A KR102712052B1 KR 102712052 B1 KR102712052 B1 KR 102712052B1 KR 1020170004297 A KR1020170004297 A KR 1020170004297A KR 20170004297 A KR20170004297 A KR 20170004297A KR 102712052 B1 KR102712052 B1 KR 102712052B1
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memory
memory array
memory module
host device
module
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KR20170104115A (ko
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무-티엔 창
디민 니우
홍종 정
임선영
김인동
최장석
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삼성전자주식회사
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    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
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    • G06F3/061—Improving I/O performance
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    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
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    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
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    • G—PHYSICS
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    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0409—Online test
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction
    • G—PHYSICS
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    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Dram (AREA)
KR1020170004297A 2016-03-03 2017-01-11 인-모듈 기능들을 수행하는 메모리 모듈 Active KR102712052B1 (ko)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US201662303352P 2016-03-03 2016-03-03
US201662303347P 2016-03-03 2016-03-03
US201662303349P 2016-03-03 2016-03-03
US201662303343P 2016-03-03 2016-03-03
US62/303,343 2016-03-03
US62/303,347 2016-03-03
US62/303,349 2016-03-03
US62/303,352 2016-03-03
US201662347569P 2016-06-08 2016-06-08
US62/347,569 2016-06-08
US15/213,386 2016-07-18
US15/213,386 US10592114B2 (en) 2016-03-03 2016-07-18 Coordinated in-module RAS features for synchronous DDR compatible memory

Publications (2)

Publication Number Publication Date
KR20170104115A KR20170104115A (ko) 2017-09-14
KR102712052B1 true KR102712052B1 (ko) 2024-10-02

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US (4) US10592114B2 (enExample)
JP (1) JP7022511B2 (enExample)
KR (1) KR102712052B1 (enExample)
CN (1) CN107153616B (enExample)
TW (2) TWI703444B (enExample)

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