JP2017147392A - 半導体ウェーハの熱処理方法 - Google Patents
半導体ウェーハの熱処理方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 137
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 177
- 239000010408 film Substances 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005498 polishing Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】枚葉式の熱処理炉内に、半導体ウェーハを載置可能なサセプタを配設し、該サセプタに載置された半導体ウェーハに熱処理を行う半導体ウェーハの熱処理方法であって、前記熱処理の前に、前記熱処理炉内において、前記熱処理の温度よりも低温の所定温度で所定時間保持する予備加熱を行い、該予備加熱中は、前記半導体ウェーハを前記サセプタから離間させて保持することを特徴とする半導体ウェーハの熱処理方法。
【選択図】図1
Description
前記熱処理の前に、前記熱処理炉内において、前記熱処理の温度よりも低温の所定温度で所定時間保持する予備加熱を行い、該予備加熱中は、前記半導体ウェーハを前記サセプタから離間させて保持することを特徴とする半導体ウェーハの熱処理方法を提供する。
下記表1及び図3に示す温度プロファイル(レシピタイムチャート)にて、下記表1に示すSOIウェーハに対して、予備加熱及び熱処理を行った。図3において、縦軸は熱処理温度(℃)、横軸は経過時間(レシピ経過時間)(秒)である。また、実施例1の温度プロファイルと各温度における工程の詳細と各温度におけるSOIウェーハの位置との関係は図6に示す通りである。なお、図6には、SOIウェーハを2枚連続で熱処理した場合の温度プロファイルを示している。なお、表1に示すサイクルタイムは、図3〜6に示すようにSOIウェーハ投入時から急速降温終了時までの時間である。
下記表1及び図4に示す温度プロファイルにて、下記表1に示すSOIウェーハに対して、熱処理を行った。具体的には、予備加熱を行わないこと以外は、実施例1と同様の条件で熱処理を行った。すなわち、まず、SOIウェーハを炉内温度850℃の枚葉式熱処理炉に投入し、SOIウェーハをサセプタに載置した。次に、昇温速度15℃/秒で1100℃まで温度を上昇させた。次に、常圧、100%水素ガス雰囲気下、保持温度1100℃、高温保持時間120秒の条件で熱処理を行った。次に、降温速度15℃/秒で850℃まで温度を下降させた。
下記表1及び図5に示す温度プロファイルにて、下記表1に示すSOIウェーハに対して、熱処理を行った。具体的には、まず、SOIウェーハを炉内温度850℃の枚葉式熱処理炉に投入し、SOIウェーハをサセプタに載置した。次に、昇温プロセスを2段に分けて昇温を行った。具体的には、昇温速度2℃/秒で1000℃まで温度を上昇させた後、1000℃で30秒保持し、その後、昇温速度2℃/秒で1100℃まで温度を上昇させた。この昇温後、常圧、100%水素ガス雰囲気下、保持温度1100℃、高温保持時間120秒の条件で熱処理を行った。その後、降温速度15℃/秒で850℃まで温度を下降させた。
予備加熱における保持時間を60秒とした以外は、実施例1と同様の条件で予備加熱及び熱処理を行った。その結果、実施例2においてもSOIウェーハのスリップが発生しなかった。また、比較例1に対する実施例2のサイクルタイムの相対値は1.33となり、生産性も維持することができた。
12…搬送ブレード、 13…サセプタ、
14…リフトピン、 15…ランプ、
21…ベースウェーハ、 22…埋め込み絶縁膜層、
23…SOI層。
Claims (6)
- 枚葉式の熱処理炉内に、半導体ウェーハを載置可能なサセプタを配設し、該サセプタに載置された半導体ウェーハに熱処理を行う半導体ウェーハの熱処理方法であって、
前記熱処理の前に、前記熱処理炉内において、前記熱処理の温度よりも低温の所定温度で所定時間保持する予備加熱を行い、該予備加熱中は、前記半導体ウェーハを前記サセプタから離間させて保持することを特徴とする半導体ウェーハの熱処理方法。 - 前記半導体ウェーハの前記サセプタからの離間を、前記サセプタに対して前記半導体ウェーハを相対的に上下動させるリフトピンに前記半導体ウェーハを支持させて行うことを特徴とする請求項1に記載の半導体ウェーハの熱処理方法。
- 前記半導体ウェーハをSOIウェーハとすることを特徴とする請求項1又は請求項2に記載の半導体ウェーハの熱処理方法。
- 前記熱処理の温度を1100℃以上とし、前記予備加熱の温度を700℃以上1100℃未満とすることを特徴とする請求項1から請求項3のいずれか一項に記載の半導体ウェーハの熱処理方法。
- 前記熱処理を水素ガス若しくはアルゴンガス、又は、これらの混合ガス雰囲気で行うことを特徴とする請求項1から請求項4のいずれか一項に記載の半導体ウェーハの熱処理方法。
- 前記予備加熱の保持時間を10秒以上90秒以下とすることを特徴とする請求項1から請求項5のいずれか一項に記載の半導体ウェーハの熱処理方法。
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JP2016029815A JP6513041B2 (ja) | 2016-02-19 | 2016-02-19 | 半導体ウェーハの熱処理方法 |
US16/072,541 US10763127B2 (en) | 2016-02-19 | 2017-01-26 | Heat treatment method for semiconductor wafer |
CN201780011704.0A CN108701593B (zh) | 2016-02-19 | 2017-01-26 | 半导体晶圆的热处理方法 |
PCT/JP2017/002618 WO2017141652A1 (ja) | 2016-02-19 | 2017-01-26 | 半導体ウェーハの熱処理方法 |
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JP2016029815A JP6513041B2 (ja) | 2016-02-19 | 2016-02-19 | 半導体ウェーハの熱処理方法 |
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JP2017147392A true JP2017147392A (ja) | 2017-08-24 |
JP6513041B2 JP6513041B2 (ja) | 2019-05-15 |
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US (1) | US10763127B2 (ja) |
JP (1) | JP6513041B2 (ja) |
CN (1) | CN108701593B (ja) |
WO (1) | WO2017141652A1 (ja) |
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JP6473970B2 (ja) * | 2015-10-28 | 2019-02-27 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
FR3093715B1 (fr) * | 2019-03-15 | 2021-03-05 | Soitec Silicon On Insulator | Dispositif de maintien pour un ensemble à fracturer |
US11961817B2 (en) * | 2021-02-26 | 2024-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for forming a package structure |
Citations (7)
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JPH01235232A (ja) * | 1988-03-15 | 1989-09-20 | Seiko Epson Corp | 絶縁基板上の半導体膜の加熱法 |
JPH1197431A (ja) * | 1997-09-19 | 1999-04-09 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2002217183A (ja) * | 2001-01-22 | 2002-08-02 | Tokyo Electron Ltd | 熱処理装置と熱処理方法 |
JP2005085993A (ja) * | 2003-09-09 | 2005-03-31 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
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JP2014175637A (ja) * | 2013-03-13 | 2014-09-22 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
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2016
- 2016-02-19 JP JP2016029815A patent/JP6513041B2/ja active Active
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2017
- 2017-01-26 WO PCT/JP2017/002618 patent/WO2017141652A1/ja active Application Filing
- 2017-01-26 US US16/072,541 patent/US10763127B2/en active Active
- 2017-01-26 CN CN201780011704.0A patent/CN108701593B/zh active Active
Patent Citations (7)
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JPH01235232A (ja) * | 1988-03-15 | 1989-09-20 | Seiko Epson Corp | 絶縁基板上の半導体膜の加熱法 |
JPH1197431A (ja) * | 1997-09-19 | 1999-04-09 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2002217183A (ja) * | 2001-01-22 | 2002-08-02 | Tokyo Electron Ltd | 熱処理装置と熱処理方法 |
JP2005085993A (ja) * | 2003-09-09 | 2005-03-31 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2006261191A (ja) * | 2005-03-15 | 2006-09-28 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
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JP2014175637A (ja) * | 2013-03-13 | 2014-09-22 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
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JP6513041B2 (ja) | 2019-05-15 |
WO2017141652A1 (ja) | 2017-08-24 |
US10763127B2 (en) | 2020-09-01 |
CN108701593B (zh) | 2023-03-14 |
US20190035639A1 (en) | 2019-01-31 |
CN108701593A (zh) | 2018-10-23 |
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