JP2017147237A - X線発生装置 - Google Patents
X線発生装置 Download PDFInfo
- Publication number
- JP2017147237A JP2017147237A JP2017087883A JP2017087883A JP2017147237A JP 2017147237 A JP2017147237 A JP 2017147237A JP 2017087883 A JP2017087883 A JP 2017087883A JP 2017087883 A JP2017087883 A JP 2017087883A JP 2017147237 A JP2017147237 A JP 2017147237A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- ray
- emission structure
- ray generator
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 64
- 238000004846 x-ray emission Methods 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 description 73
- 239000011295 pitch Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 32
- 238000010586 diagram Methods 0.000 description 15
- 238000004088 simulation Methods 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000014509 gene expression Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 230000005461 Bremsstrahlung Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101710129448 Glucose-6-phosphate isomerase 2 Proteins 0.000 description 1
- 206010047513 Vision blurred Diseases 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/14—Arrangements for focusing or reflecting ray or beam
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
- G01N23/046—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/467—Control electrodes for flat display tubes, e.g. of the type covered by group H01J31/123
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/027—Construction of the gun or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/025—X-ray tubes with structurally associated circuit elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/045—Electrodes for controlling the current of the cathode ray, e.g. control grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/064—Details of the emitter, e.g. material or structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/112—Non-rotating anodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/112—Non-rotating anodes
- H01J35/116—Transmissive anodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/14—Arrangements for concentrating, focusing, or directing the cathode ray
- H01J35/147—Spot size control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/14—Arrangements for concentrating, focusing, or directing the cathode ray
- H01J35/153—Spot position control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/16—Vessels; Containers; Shields associated therewith
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/20—Sources of radiation
- G01N2223/204—Sources of radiation source created from radiated target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/419—Imaging computed tomograph
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/06—Cathode assembly
- H01J2235/068—Multi-cathode assembly
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Pulmonology (AREA)
- Radiology & Medical Imaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Biomedical Technology (AREA)
- Medical Informatics (AREA)
- Optics & Photonics (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
【解決手段】X線放出構造体220は、X線ターゲットである陽極52を含み、電子放出構造体210は、少なくとも1つのアクティブゾーン85を有し、各アクティブゾーン85は、陰極56と、アレイ状に配置された複数のエミッタティップ72を含むゲーテッドコーン型電子源70と、ゲーテッドコーン型電子源70と陰極56との間に位置する抵抗層57と、複数のゲートホール62を含み、複数のゲートホール62のうち少なくとも1つの位置は複数のエミッタティップ72のうち少なくとも1つの位置に対応しているゲート電極60と、を有する少なくとも1つのアクティブエリア80と、を含み、複数のエミッタティップ72は、X線放出構造体220に向けて電子ビームを放出するように構成される。
【選択図】図6
Description
Claims (19)
- X線放出構造体と電子放出構造体とが互いに対向し、前記X線放出構造体と前記電子放出構造体との間に真空内部間隙が存在するように配置された少なくとも1つのスペーサで隔てられた、前記X線放出構造体と前記電子放出構造体とを備えるX線発生装置であって、
前記X線放出構造体は、X線ターゲットである陽極を含み、
前記電子放出構造体は、少なくとも1つのアクティブゾーンを有し、各アクティブゾーンは、
(a)陰極と、
(b)アレイ状に配置された複数のエミッタティップを含む、ゲーテッドコーン型電子源と、
(c)前記ゲーテッドコーン型電子源と前記陰極との間に位置する抵抗層と、
(d)複数のゲートホールを含み、前記複数のゲートホールのうち少なくとも1つの位置は前記複数のエミッタティップのうち少なくとも1つの位置に対応しているゲート電極と、を有する少なくとも1つのアクティブエリアと、を含み、
前記複数のエミッタティップは、前記X線放出構造体に向けて電子ビームを放出するように構成されている、X線発生装置。 - 前記アクティブゾーンは、複数の前記アクティブエリアを含み、
前記アクティブゾーンは、少なくとも1つの集束構造で囲まれており、
前記複数のアクティブエリアは、正方形の格子パターンで前記アクティブゾーン内に配置される、請求項1に記載のX線発生装置。 - 前記複数のアクティブエリアのうちの1つまたは複数のサブセットを、独立に駆動することが可能である、請求項2に記載のX線発生装置。
- 前記複数のアクティブエリアのうちの1つまたは複数の制御された駆動により、前記アクティブゾーンの全放出電流を調整することが可能である、請求項3に記載のX線発生装置。
- 前記複数のアクティブエリアの前記サブセットは、同心状の領域として編成され、これにより、前記同心状の領域のうち1つまたは複数の制御された駆動によって前記電子ビームの初期幅を調整することが可能である、請求項3に記載のX線発生装置。
- 前記ゲートホールの直径は、200ナノメートル未満である、請求項1乃至5のいずれか一項に記載のX線発生装置。
- 前記ゲート電極は、ゲート配線リードを介して電圧源に接続され、前記ゲート電極がすべての側において前記ゲート配線リードに接続されるように前記ゲート配線リードの割れ目に配置されている、請求項1乃至6のいずれか一項に記載のX線発生装置。
- 前記ゲート配線リードは、前記ゲート電極よりも厚い、請求項7に記載のX線発生装置。
- 前記抵抗層は、SiCNを含む、請求項1乃至8のいずれか一項に記載のX線発生装置。
- 前記抵抗層は、前記陰極との界面に配置された第1のバリア副層を含む、請求項9に記載のX線発生装置。
- 前記抵抗層は、前記ゲーテッドコーン型電子源との界面に配置された第2のバリア副層を含む、請求項9又は10に記載のX線発生装置。
- 前記第1及び第2のバリア副層はそれぞれ、40%未満のシリコン原子パーセントを有するSiCNまたはSiCを含む、請求項11に記載のX線発生装置。
- 前記第1及び第2のバリア副層はそれぞれ、アモルファスカーボンを含む、請求項11に記載のX線発生装置。
- 前記複数のエミッタティップの各々の位置、対応する前記ゲートホール、前記陰極、および前記抵抗層は、前記電子放出構造体の平面に沿ってオーバラップしている、請求項1乃至13のいずれか一項に記載のX線発生装置。
- 前記内部間隙は、前記電子放出構造体と前記X線放出構造体との間に遮るもののない空間を提供する、請求項1乃至14のいずれか一項に記載のX線発生装置。
- 前記陽極は、モリブデン、ロジウム、タングステンからなる群からの1つまたは複数のものを含む、請求項1乃至15のいずれか一項に記載のX線発生装置。
- 前記電子放出構造体は、シリコン系の基板をさらに含む、請求項1乃至16のいずれか一項に記載のX線発生装置。
- 前記ゲート電極、前記陰極、前記抵抗層、前記ゲーテッドコーン型電子源からなる群から選択された少なくとも一項の部材は、前記基板と一体である、請求項17に記載のX線発生装置。
- 前記複数のアクティブエリアは、同時駆動されるように構成されている、請求項2に記載のX線発生装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261611990P | 2012-03-16 | 2012-03-16 | |
US61/611,990 | 2012-03-16 | ||
US201261747455P | 2012-12-31 | 2012-12-31 | |
US61/747,455 | 2012-12-31 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014561576A Division JP2015515091A (ja) | 2012-03-16 | 2013-03-14 | 電子放出構造を有する装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017147237A true JP2017147237A (ja) | 2017-08-24 |
JP6400776B2 JP6400776B2 (ja) | 2018-10-03 |
Family
ID=49160326
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014561576A Pending JP2015515091A (ja) | 2012-03-16 | 2013-03-14 | 電子放出構造を有する装置 |
JP2017087883A Active JP6400776B2 (ja) | 2012-03-16 | 2017-04-27 | X線発生装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014561576A Pending JP2015515091A (ja) | 2012-03-16 | 2013-03-14 | 電子放出構造を有する装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10242836B2 (ja) |
EP (1) | EP2826056B1 (ja) |
JP (2) | JP2015515091A (ja) |
KR (1) | KR102076380B1 (ja) |
CN (1) | CN104170050B (ja) |
IL (1) | IL234669B (ja) |
WO (1) | WO2013136299A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015515091A (ja) * | 2012-03-16 | 2015-05-21 | ナノックス イメージング ピーエルシー | 電子放出構造を有する装置 |
JP6295254B2 (ja) * | 2012-08-16 | 2018-03-14 | ナノックス イメージング ピーエルシー | X線放出装置 |
JP6476183B2 (ja) | 2013-11-27 | 2019-02-27 | ナノックス イメージング ピーエルシー | イオン爆撃抵抗性を有して構成される電子放出構造物 |
GB2531326B (en) * | 2014-10-16 | 2020-08-05 | Adaptix Ltd | An X-Ray emitter panel and a method of designing such an X-Ray emitter panel |
CN107210079B (zh) * | 2015-02-05 | 2020-03-20 | 株式会社岛津制作所 | X射线发生装置 |
US10334712B2 (en) | 2015-11-11 | 2019-06-25 | Electronics And Telecommunications Research Institute | Radiography apparatus |
US11282668B2 (en) * | 2016-03-31 | 2022-03-22 | Nano-X Imaging Ltd. | X-ray tube and a controller thereof |
CN109411312B (zh) * | 2018-10-31 | 2020-07-28 | 中国工程物理研究院流体物理研究所 | 基于飞秒激光调制的超快电子枪及其验证方法 |
CN109507215B (zh) * | 2018-11-26 | 2022-05-17 | 国家纳米科学中心 | X射线成像装置及x射线成像方法 |
US10825634B2 (en) * | 2019-02-21 | 2020-11-03 | Varex Imaging Corporation | X-ray tube emitter |
US11152183B2 (en) * | 2019-07-15 | 2021-10-19 | Sigray, Inc. | X-ray source with rotating anode at atmospheric pressure |
US11417492B2 (en) | 2019-09-26 | 2022-08-16 | Kla Corporation | Light modulated electron source |
US11719652B2 (en) * | 2020-02-04 | 2023-08-08 | Kla Corporation | Semiconductor metrology and inspection based on an x-ray source with an electron emitter array |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4940916A (en) * | 1987-11-06 | 1990-07-10 | Commissariat A L'energie Atomique | Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source |
JP2004511884A (ja) * | 2000-10-06 | 2004-04-15 | ザ ユニバーシティ オブ ノース カロライナ − チャペル ヒル | 電子電界放出カソードを使用するx線発生機構 |
JP2009189507A (ja) * | 2008-02-13 | 2009-08-27 | Canon Inc | X線発生装置、x線撮影装置及びそれらの制御方法 |
JP2011258470A (ja) * | 2010-06-10 | 2011-12-22 | Canon Inc | 電子放出素子およびそれを用いた画像表示装置ならびに放射線発生装置および放射線撮像システム |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2310061A1 (de) | 1973-02-28 | 1974-08-29 | Siemens Ag | Roentgenroehre |
JP2897520B2 (ja) | 1992-04-02 | 1999-05-31 | 日本電気株式会社 | 冷陰極 |
JPH08507643A (ja) | 1993-03-11 | 1996-08-13 | フェド.コーポレイション | エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法 |
JP3384840B2 (ja) | 1993-07-13 | 2003-03-10 | 株式会社日立製作所 | 撮像管およびその動作方法 |
US5528103A (en) * | 1994-01-31 | 1996-06-18 | Silicon Video Corporation | Field emitter with focusing ridges situated to sides of gate |
US5552659A (en) * | 1994-06-29 | 1996-09-03 | Silicon Video Corporation | Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence |
US5677539A (en) * | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
US6031250A (en) | 1995-12-20 | 2000-02-29 | Advanced Technology Materials, Inc. | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
JPH09219144A (ja) * | 1996-02-08 | 1997-08-19 | Futaba Corp | 電界放出カソードとその製造方法 |
IL119075A (en) * | 1996-08-14 | 1999-11-30 | Imarad Imaging Systems Ltd | Semiconductor detector |
JP2939943B2 (ja) | 1996-11-01 | 1999-08-25 | 日本電気株式会社 | 冷陰極電子銃およびこれを備えたマイクロ波管装置 |
JPH10302688A (ja) | 1997-04-30 | 1998-11-13 | Rigaku Corp | X線発生装置 |
US6002199A (en) * | 1997-05-30 | 1999-12-14 | Candescent Technologies Corporation | Structure and fabrication of electron-emitting device having ladder-like emitter electrode |
FR2764731A1 (fr) * | 1997-06-13 | 1998-12-18 | Commissariat Energie Atomique | Tube a rayons x comportant une source d'electrons a micropointes et des moyens de focalisations magnetique |
US6013986A (en) | 1997-06-30 | 2000-01-11 | Candescent Technologies Corporation | Electron-emitting device having multi-layer resistor |
US6034373A (en) * | 1997-12-11 | 2000-03-07 | Imrad Imaging Systems Ltd. | Semiconductor radiation detector with reduced surface effects |
US6028313A (en) * | 1997-12-31 | 2000-02-22 | Mcdaniel; David L. | Direct conversion photon detector |
JP2000048743A (ja) * | 1998-05-26 | 2000-02-18 | Futaba Corp | 平面形撮像装置及びその製造方法 |
KR20010046795A (ko) * | 1999-11-15 | 2001-06-15 | 김덕중 | 집속 렌즈를 갖는 전계 방출 표시 소자 및 그 제조방법 |
US6456691B2 (en) * | 2000-03-06 | 2002-09-24 | Rigaku Corporation | X-ray generator |
US6333968B1 (en) * | 2000-05-05 | 2001-12-25 | The United States Of America As Represented By The Secretary Of The Navy | Transmission cathode for X-ray production |
US7227924B2 (en) | 2000-10-06 | 2007-06-05 | The University Of North Carolina At Chapel Hill | Computed tomography scanning system and method using a field emission x-ray source |
US6980627B2 (en) * | 2000-10-06 | 2005-12-27 | Xintek, Inc. | Devices and methods for producing multiple x-ray beams from multiple locations |
US7082182B2 (en) * | 2000-10-06 | 2006-07-25 | The University Of North Carolina At Chapel Hill | Computed tomography system for imaging of human and small animal |
US7085351B2 (en) * | 2000-10-06 | 2006-08-01 | University Of North Carolina At Chapel Hill | Method and apparatus for controlling electron beam current |
US7826595B2 (en) * | 2000-10-06 | 2010-11-02 | The University Of North Carolina | Micro-focus field emission x-ray sources and related methods |
WO2002067779A1 (fr) * | 2001-02-28 | 2002-09-06 | Mitsubishi Heavy Industries, Ltd. | Appareil de tomodensitometrie emettant des rayons x depuis une source de rayonnement multiple |
WO2002103737A2 (en) * | 2001-06-14 | 2002-12-27 | Hyperion Catalysis International, Inc. | Field emission devices using ion bombarded carbon nanotubes |
US6674837B1 (en) * | 2001-06-15 | 2004-01-06 | Nan Crystal Imaging Corporation | X-ray imaging system incorporating pixelated X-ray source and synchronized detector |
US6760407B2 (en) * | 2002-04-17 | 2004-07-06 | Ge Medical Global Technology Company, Llc | X-ray source and method having cathode with curved emission surface |
US7158102B2 (en) | 2002-04-26 | 2007-01-02 | Candescent Technologies Corporation | System and method for recalibrating flat panel field emission displays |
US6809465B2 (en) * | 2002-08-23 | 2004-10-26 | Samsung Electronics Co., Ltd. | Article comprising MEMS-based two-dimensional e-beam sources and method for making the same |
US7233101B2 (en) * | 2002-12-31 | 2007-06-19 | Samsung Electronics Co., Ltd. | Substrate-supported array having steerable nanowires elements use in electron emitting devices |
US7042982B2 (en) * | 2003-11-19 | 2006-05-09 | Lucent Technologies Inc. | Focusable and steerable micro-miniature x-ray apparatus |
US7192031B2 (en) * | 2004-02-05 | 2007-03-20 | General Electric Company | Emitter array configurations for a stationary CT system |
JP2005228556A (ja) | 2004-02-12 | 2005-08-25 | Pioneer Electronic Corp | 電子放出素子を用いた光電変換装置および撮像装置 |
US7085352B2 (en) * | 2004-06-30 | 2006-08-01 | General Electric Company | Electron emitter assembly and method for generating electron beams |
US7323692B2 (en) | 2004-08-10 | 2008-01-29 | Research Foundation Of State University Of New York | Flat-panel detector with avalanche gain |
KR101049822B1 (ko) * | 2004-08-30 | 2011-07-15 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
US7868850B2 (en) | 2004-10-06 | 2011-01-11 | Samsung Electronics Co., Ltd. | Field emitter array with split gates and method for operating the same |
WO2006064634A1 (ja) | 2004-12-17 | 2006-06-22 | Pioneer Corporation | 電子放出素子及びその製造方法 |
KR100660466B1 (ko) | 2005-02-01 | 2006-12-22 | 남상희 | 에프이디 소자를 이용한 엑스레이 검출기판 |
CN100543913C (zh) * | 2005-02-25 | 2009-09-23 | 清华大学 | 场发射显示装置 |
US7402942B2 (en) * | 2005-10-31 | 2008-07-22 | Samsung Sdi Co., Ltd. | Electron emission device and electron emission display using the same |
JP2007194014A (ja) | 2006-01-18 | 2007-08-02 | Fujifilm Corp | 画像検出器 |
US7825591B2 (en) * | 2006-02-15 | 2010-11-02 | Panasonic Corporation | Mesh structure and field-emission electron source apparatus using the same |
US20070188090A1 (en) | 2006-02-15 | 2007-08-16 | Matsushita Toshiba Picture Display Co., Ltd. | Field-emission electron source apparatus |
US20070189459A1 (en) * | 2006-02-16 | 2007-08-16 | Stellar Micro Devices, Inc. | Compact radiation source |
JP4878311B2 (ja) * | 2006-03-03 | 2012-02-15 | キヤノン株式会社 | マルチx線発生装置 |
DE102006018633B4 (de) | 2006-04-21 | 2011-12-29 | Siemens Ag | Flächenemitter und Röntgenröhre mit Flächenemitter |
JP2007305337A (ja) | 2006-05-09 | 2007-11-22 | Hitachi Medical Corp | マイクロフォーカスx線管 |
US7609815B2 (en) * | 2006-06-01 | 2009-10-27 | The Regents Of The University Of California | High brightness—multiple beamlets source for patterned X-ray production |
US8274205B2 (en) * | 2006-12-05 | 2012-09-25 | General Electric Company | System and method for limiting arc effects in field emitter arrays |
WO2008136188A1 (ja) * | 2007-04-26 | 2008-11-13 | Panasonic Corporation | X線撮像デバイス及びx線撮影装置 |
JP5041875B2 (ja) | 2007-05-21 | 2012-10-03 | 日本放送協会 | 撮像装置 |
JP5066392B2 (ja) | 2007-05-21 | 2012-11-07 | 日本放送協会 | 撮像装置 |
US7627087B2 (en) * | 2007-06-28 | 2009-12-01 | General Electric Company | One-dimensional grid mesh for a high-compression electron gun |
JP5074879B2 (ja) | 2007-10-16 | 2012-11-14 | 双葉電子工業株式会社 | 電子放出素子及び表示素子 |
US7826594B2 (en) * | 2008-01-21 | 2010-11-02 | General Electric Company | Virtual matrix control scheme for multiple spot X-ray source |
US7809114B2 (en) | 2008-01-21 | 2010-10-05 | General Electric Company | Field emitter based electron source for multiple spot X-ray |
FR2926924B1 (fr) | 2008-01-25 | 2012-10-12 | Thales Sa | Source radiogene comprenant au moins une source d'electrons associee a un dispositif photoelectrique de commande |
JP5294653B2 (ja) * | 2008-02-28 | 2013-09-18 | キヤノン株式会社 | マルチx線発生装置及びx線撮影装置 |
KR100980557B1 (ko) * | 2008-03-24 | 2010-09-06 | 경희대학교 산학협력단 | 엑스레이 장치를 구비한 내시경 |
US7801277B2 (en) * | 2008-03-26 | 2010-09-21 | General Electric Company | Field emitter based electron source with minimized beam emittance growth |
JP5106284B2 (ja) | 2008-07-16 | 2012-12-26 | パイオニア株式会社 | 撮像装置 |
JP4693884B2 (ja) | 2008-09-18 | 2011-06-01 | キヤノン株式会社 | マルチx線撮影装置及びその制御方法 |
EP2430638B1 (en) * | 2009-05-12 | 2018-08-08 | Koninklijke Philips N.V. | X-ray source with a plurality of electron emitters and method of use |
ES2569122T3 (es) * | 2009-08-07 | 2016-05-06 | The Regents Of The University Of California | Aparato para producir rayos X para su uso en imagenología |
JP2011071022A (ja) | 2009-09-28 | 2011-04-07 | Horizon:Kk | 電子放出装置及びそれを用いた電子放出型電子機器 |
DE102009043424A1 (de) | 2009-09-29 | 2011-04-07 | Siemens Aktiengesellschaft | Medizinisches Röntgenaufnahmesystem |
DE102009058266B4 (de) | 2009-12-14 | 2020-01-02 | Siemens Healthcare Gmbh | Medizinisches Röntgenaufnahmesystem |
US8588372B2 (en) * | 2009-12-16 | 2013-11-19 | General Electric Company | Apparatus for modifying electron beam aspect ratio for X-ray generation |
US8447013B2 (en) | 2010-03-22 | 2013-05-21 | Xinray Systems Inc | Multibeam x-ray source with intelligent electronic control systems and related methods |
JP5331041B2 (ja) * | 2010-03-30 | 2013-10-30 | 日本放送協会 | 電子放出源アレイ、撮像装置、及び表示装置 |
KR101239765B1 (ko) * | 2011-02-09 | 2013-03-06 | 삼성전자주식회사 | 엑스레이 발생장치 및 이를 포함하는 엑스레이 촬영 시스템 |
CN202126987U (zh) | 2011-06-17 | 2012-01-25 | 上海现代科技发展有限公司 | 微焦点x射线源 |
CN102324350B (zh) | 2011-08-07 | 2013-12-04 | 上海康众光电科技有限公司 | 一种定向生长的网格状高性能碳纳米管场发射阵列及制备方法 |
JP2015515091A (ja) * | 2012-03-16 | 2015-05-21 | ナノックス イメージング ピーエルシー | 電子放出構造を有する装置 |
US8953747B2 (en) | 2012-03-28 | 2015-02-10 | Schlumberger Technology Corporation | Shielding electrode for an X-ray generator |
WO2013187970A2 (en) * | 2012-05-14 | 2013-12-19 | The General Hospital Corporation | Method for coded-source phase contrast x-ray imaging |
KR101341672B1 (ko) * | 2012-07-27 | 2013-12-16 | 경희대학교 산학협력단 | 디지털 엑스레이 소스 |
JP6295254B2 (ja) * | 2012-08-16 | 2018-03-14 | ナノックス イメージング ピーエルシー | X線放出装置 |
CN103903941B (zh) * | 2012-12-31 | 2018-07-06 | 同方威视技术股份有限公司 | 阴控多阴极分布式x射线装置及具有该装置的ct设备 |
US9748071B2 (en) * | 2013-02-05 | 2017-08-29 | Massachusetts Institute Of Technology | Individually switched field emission arrays |
US9793089B2 (en) * | 2013-09-16 | 2017-10-17 | Kla-Tencor Corporation | Electron emitter device with integrated multi-pole electrode structure |
JP2015144809A (ja) * | 2014-01-06 | 2015-08-13 | 株式会社東芝 | X線コンピュータ断層撮影装置及びフォトンカウンティングct装置 |
KR102032170B1 (ko) * | 2014-01-24 | 2019-10-15 | 한국전자통신연구원 | 멀티 전계 방출 소자들의 구동방법 및 멀티 전계 방출 시스템 |
US9666401B2 (en) * | 2014-11-21 | 2017-05-30 | Electronics And Telecommunications Research Institute | Field-emission device with improved beams-convergence |
US9711255B2 (en) * | 2015-01-16 | 2017-07-18 | Stanley Electric Co., Ltd | Ultraviolet-emitting material and ultraviolet light source |
US9966230B1 (en) * | 2016-10-13 | 2018-05-08 | Kla-Tencor Corporation | Multi-column electron beam lithography including field emitters on a silicon substrate with boron layer |
-
2013
- 2013-03-14 JP JP2014561576A patent/JP2015515091A/ja active Pending
- 2013-03-14 CN CN201380014666.6A patent/CN104170050B/zh active Active
- 2013-03-14 KR KR1020147028401A patent/KR102076380B1/ko active IP Right Grant
- 2013-03-14 EP EP13761314.7A patent/EP2826056B1/en active Active
- 2013-03-14 US US14/385,503 patent/US10242836B2/en active Active
- 2013-03-14 WO PCT/IB2013/052045 patent/WO2013136299A1/en active Application Filing
-
2014
- 2014-09-15 IL IL234669A patent/IL234669B/en active IP Right Grant
-
2017
- 2017-04-27 JP JP2017087883A patent/JP6400776B2/ja active Active
-
2019
- 2019-02-26 US US16/285,475 patent/US11101095B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4940916A (en) * | 1987-11-06 | 1990-07-10 | Commissariat A L'energie Atomique | Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source |
US4940916B1 (en) * | 1987-11-06 | 1996-11-26 | Commissariat Energie Atomique | Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source |
JP2004511884A (ja) * | 2000-10-06 | 2004-04-15 | ザ ユニバーシティ オブ ノース カロライナ − チャペル ヒル | 電子電界放出カソードを使用するx線発生機構 |
JP2009189507A (ja) * | 2008-02-13 | 2009-08-27 | Canon Inc | X線発生装置、x線撮影装置及びそれらの制御方法 |
JP2011258470A (ja) * | 2010-06-10 | 2011-12-22 | Canon Inc | 電子放出素子およびそれを用いた画像表示装置ならびに放射線発生装置および放射線撮像システム |
Also Published As
Publication number | Publication date |
---|---|
US20190189383A1 (en) | 2019-06-20 |
IL234669B (en) | 2019-07-31 |
EP2826056B1 (en) | 2023-07-19 |
EP2826056A4 (en) | 2016-08-17 |
KR20140143399A (ko) | 2014-12-16 |
CN104170050B (zh) | 2018-01-12 |
US11101095B2 (en) | 2021-08-24 |
JP6400776B2 (ja) | 2018-10-03 |
US20150092923A1 (en) | 2015-04-02 |
US10242836B2 (en) | 2019-03-26 |
CN104170050A (zh) | 2014-11-26 |
WO2013136299A1 (en) | 2013-09-19 |
KR102076380B1 (ko) | 2020-02-11 |
JP2015515091A (ja) | 2015-05-21 |
EP2826056A1 (en) | 2015-01-21 |
IL234669A0 (en) | 2014-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6400776B2 (ja) | X線発生装置 | |
JP6295254B2 (ja) | X線放出装置 | |
KR101113092B1 (ko) | 멀티 x선 발생장치 및 멀티 x선 촬영장치 | |
US20120027173A1 (en) | Structured electron emitter for coded source imaging with an x-ray tube | |
JP2007265981A5 (ja) | ||
JP2014161738A (ja) | X線映像システム、x線発生器及び電子放出素子 | |
CN109417008A (zh) | 用于产生x射线的阴极组件 | |
US9711321B2 (en) | Low aberration, high intensity electron beam for X-ray tubes | |
US10032595B2 (en) | Robust electrode with septum rod for biased X-ray tube cathode | |
JP5312555B2 (ja) | マルチx線発生装置 | |
KR20160102748A (ko) | 전계 방출 엑스선 소스 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180316 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180724 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20180801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180828 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180905 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6400776 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |