JP2017123355A5 - - Google Patents
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- Publication number
- JP2017123355A5 JP2017123355A5 JP2016000030A JP2016000030A JP2017123355A5 JP 2017123355 A5 JP2017123355 A5 JP 2017123355A5 JP 2016000030 A JP2016000030 A JP 2016000030A JP 2016000030 A JP2016000030 A JP 2016000030A JP 2017123355 A5 JP2017123355 A5 JP 2017123355A5
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- metal oxide
- oxide film
- manufacturing
- magnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims description 45
- 150000004706 metal oxides Chemical class 0.000 claims description 45
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 125000003172 aldehyde group Chemical group 0.000 claims 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 1
- 238000011109 contamination Methods 0.000 claims 1
- 230000006866 deterioration Effects 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 235000019253 formic acid Nutrition 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 238000011946 reduction process Methods 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016000030A JP6506702B2 (ja) | 2016-01-04 | 2016-01-04 | 磁気抵抗素子の製造方法および真空処理装置 |
| KR1020160098405A KR101786776B1 (ko) | 2016-01-04 | 2016-08-02 | 자기 저항 소자의 제조 방법 및 진공 처리 장치 |
| TW105125449A TWI600121B (zh) | 2016-01-04 | 2016-08-10 | Method for manufacturing magnetoresistive element and vacuum processing apparatus |
| US15/251,595 US10243140B2 (en) | 2016-01-04 | 2016-08-30 | Manufacturing method of magnetoresistive element and vacuum processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016000030A JP6506702B2 (ja) | 2016-01-04 | 2016-01-04 | 磁気抵抗素子の製造方法および真空処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017123355A JP2017123355A (ja) | 2017-07-13 |
| JP2017123355A5 true JP2017123355A5 (enExample) | 2018-06-07 |
| JP6506702B2 JP6506702B2 (ja) | 2019-04-24 |
Family
ID=59226958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016000030A Active JP6506702B2 (ja) | 2016-01-04 | 2016-01-04 | 磁気抵抗素子の製造方法および真空処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10243140B2 (enExample) |
| JP (1) | JP6506702B2 (enExample) |
| KR (1) | KR101786776B1 (enExample) |
| TW (1) | TWI600121B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110856454B (zh) * | 2018-06-20 | 2023-09-29 | 株式会社日立高新技术 | 磁阻元件的制造方法 |
| CN109346390A (zh) * | 2018-08-31 | 2019-02-15 | 湖北汉光科技股份有限公司 | 铯束管用电子倍增器的二次发射体的制作方法 |
| US10840441B2 (en) * | 2018-09-14 | 2020-11-17 | International Business Machines Corporation | Diamond-like carbon hardmask for MRAM |
| US11997931B2 (en) | 2018-10-31 | 2024-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bar-type magnetoresistive random access memory cell |
| KR20220125050A (ko) * | 2021-03-04 | 2022-09-14 | 삼성전자주식회사 | 자기터널접합 소자, 자기터널접합 소자를 포함하는 메모리 장치, 및 자기터널접합 소자의 제조 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2677321B2 (ja) | 1995-03-15 | 1997-11-17 | 科学技術庁金属材料技術研究所長 | ドライエッチング方法 |
| EP1340269B1 (en) * | 2000-11-30 | 2009-02-25 | Asm International N.V. | Thin films for magnetic devices |
| JP4111274B2 (ja) | 2003-07-24 | 2008-07-02 | キヤノンアネルバ株式会社 | 磁性材料のドライエッチング方法 |
| US8119018B2 (en) * | 2006-09-13 | 2012-02-21 | Canon Anelva Corporation | Magnetoresistive effect element manufacturing method and multi-chamber apparatus for manufacturing magnetoresistive effect element |
| JP2008181971A (ja) * | 2007-01-23 | 2008-08-07 | Renesas Technology Corp | 不揮発性記憶装置、磁気抵抗素子および磁気抵抗素子の製造方法 |
| JP5366235B2 (ja) | 2008-01-28 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法、半導体製造装置及び記憶媒体 |
| US9147833B2 (en) * | 2013-07-05 | 2015-09-29 | Headway Technologies, Inc. | Hybridized oxide capping layer for perpendicular magnetic anisotropy |
-
2016
- 2016-01-04 JP JP2016000030A patent/JP6506702B2/ja active Active
- 2016-08-02 KR KR1020160098405A patent/KR101786776B1/ko active Active
- 2016-08-10 TW TW105125449A patent/TWI600121B/zh active
- 2016-08-30 US US15/251,595 patent/US10243140B2/en active Active
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