KR101786776B1 - 자기 저항 소자의 제조 방법 및 진공 처리 장치 - Google Patents

자기 저항 소자의 제조 방법 및 진공 처리 장치 Download PDF

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KR101786776B1
KR101786776B1 KR1020160098405A KR20160098405A KR101786776B1 KR 101786776 B1 KR101786776 B1 KR 101786776B1 KR 1020160098405 A KR1020160098405 A KR 1020160098405A KR 20160098405 A KR20160098405 A KR 20160098405A KR 101786776 B1 KR101786776 B1 KR 101786776B1
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magnetoresistive element
magnetic film
gas
metal oxide
mgo
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Korean (ko)
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KR20170081556A (ko
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마코토 사타케
마사키 야마다
게네츠 요코가와
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H01L43/12—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01L43/02—
    • H01L43/08—
    • H01L43/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020160098405A 2016-01-04 2016-08-02 자기 저항 소자의 제조 방법 및 진공 처리 장치 Active KR101786776B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016000030A JP6506702B2 (ja) 2016-01-04 2016-01-04 磁気抵抗素子の製造方法および真空処理装置
JPJP-P-2016-000030 2016-01-04

Publications (2)

Publication Number Publication Date
KR20170081556A KR20170081556A (ko) 2017-07-12
KR101786776B1 true KR101786776B1 (ko) 2017-10-18

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KR1020160098405A Active KR101786776B1 (ko) 2016-01-04 2016-08-02 자기 저항 소자의 제조 방법 및 진공 처리 장치

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US (1) US10243140B2 (enExample)
JP (1) JP6506702B2 (enExample)
KR (1) KR101786776B1 (enExample)
TW (1) TWI600121B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6829316B2 (ja) * 2018-06-20 2021-02-10 株式会社日立ハイテク 磁気抵抗素子の製造方法
CN109346390A (zh) * 2018-08-31 2019-02-15 湖北汉光科技股份有限公司 铯束管用电子倍增器的二次发射体的制作方法
US10840441B2 (en) * 2018-09-14 2020-11-17 International Business Machines Corporation Diamond-like carbon hardmask for MRAM
US11997931B2 (en) 2018-10-31 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Bar-type magnetoresistive random access memory cell
KR20220125050A (ko) * 2021-03-04 2022-09-14 삼성전자주식회사 자기터널접합 소자, 자기터널접합 소자를 포함하는 메모리 장치, 및 자기터널접합 소자의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869326B1 (ko) 2000-11-30 2008-11-18 에이에스엠 인터내셔널 엔.브이. 자기장치용 박막
JP4354519B2 (ja) 2006-09-13 2009-10-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2677321B2 (ja) 1995-03-15 1997-11-17 科学技術庁金属材料技術研究所長 ドライエッチング方法
JP4111274B2 (ja) 2003-07-24 2008-07-02 キヤノンアネルバ株式会社 磁性材料のドライエッチング方法
JP2008181971A (ja) * 2007-01-23 2008-08-07 Renesas Technology Corp 不揮発性記憶装置、磁気抵抗素子および磁気抵抗素子の製造方法
JP5366235B2 (ja) 2008-01-28 2013-12-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
US9147833B2 (en) * 2013-07-05 2015-09-29 Headway Technologies, Inc. Hybridized oxide capping layer for perpendicular magnetic anisotropy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869326B1 (ko) 2000-11-30 2008-11-18 에이에스엠 인터내셔널 엔.브이. 자기장치용 박막
JP4354519B2 (ja) 2006-09-13 2009-10-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法

Also Published As

Publication number Publication date
TWI600121B (zh) 2017-09-21
US20170194560A1 (en) 2017-07-06
JP6506702B2 (ja) 2019-04-24
KR20170081556A (ko) 2017-07-12
JP2017123355A (ja) 2017-07-13
TW201725663A (zh) 2017-07-16
US10243140B2 (en) 2019-03-26

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